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1. 发明申请

WO2005001899A3 NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME 审中-公开
标题翻译：非挥发性电化学效应装置和使用其的电路及其形成方法
公开(公告)号：WO2005001899A3
公开(公告)日：2005-06-09
申请号：PCT/US2004018349
申请日：2004-06-09
申请人： NANTERO INC , BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M , VOGELI BERNHARD , BROCK DARREN K , JAIPRAKASH VENKATACHALAM C
发明人： BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M , VOGELI BERNHARD , BROCK DARREN K , JAIPRAKASH VENKATACHALAM C
IPC分类号： G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , G11C23/00 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect transistor utilizes a nanatube-based mechanical switch (30). The switch location can be at the source, drain or gate locations of the field effect transistor. Under one embodiment, the field effect device includes a source region and a drain region with a channel region (27) disposed therebetween. The source region is connected to a corresponding terminal (T2). A gate structure is disposed over the channel region and connected to a corresponding terminal (T1). A nanotube switching element (30) is responsive to a first control terminal (T3) and a second control terminal (T4) and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal.
摘要翻译：非易失性场效应器件和使用其的电路。非易失性场效应晶体管利用基于纳米管的机械开关（30）。开关位置可以在场效应晶体管的源极，漏极或栅极位置。在一个实施例中，场效应器件包括源极区域和漏极区域，其间设置有沟道区域（27）。源极区域连接到相应的端子（T2）。栅极结构设置在沟道区域上并连接到相应的端子（T1）。纳米管开关元件（30）响应于第一控制端（T3）和第二控制端（T4），并且电连接地位于漏区和与漏区对应的端子之间。纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或闭合漏极区域及其对应端子之间的电连通路径。

2. 发明申请

WO03019801A3 METHOD FOR REPRODUCING MULTIMEDIA FILES IN A TERMINAL 审中-公开
标题翻译：方法播放多媒体文件在终端
公开(公告)号：WO03019801A3
公开(公告)日：2003-08-07
申请号：PCT/DE0203002
申请日：2002-08-16
申请人： BOSCH GMBH ROBERT , KOCH HARTWIG
发明人： KOCH HARTWIG
IPC分类号： G06F3/16 , G06F17/20 , G11C8/02 , H04B1/00 , H04B1/06 , H04H40/18 , H04H60/27 , H04H1/00
CPC分类号： H04H60/27 , H04H40/18
摘要： The invention relates to a method for reproducing multimedia files in a terminal wherein audio files are reproduced during the management of stored multimedia files according to the situation so that a user can have blind control of said multimedia files. The multimedia and audio files are, preferably, received by means of radio signals, especially digital radio signals.
摘要翻译：它提出了一种播放多媒体文件在终端，在情境中播放，让用户在多媒体的盲管理中保存的多媒体文件的管理文件的音频文件的方法。多媒体和音频文件优选地由无线电信号的装置接收的和，特别地，通过数字广播信号的装置。

3. 发明申请

WO2004095459A3 MAGNETORESISTIVE RAM DEVICE AND METHODS FOR FABRICATING 审中-公开
标题翻译：磁性RAM设备和制造方法
公开(公告)号：WO2004095459A3
公开(公告)日：2005-03-24
申请号：PCT/US2004011864
申请日：2004-04-16
申请人： FREESCALE SEMICONDUCTOR INC , GRYNKEWICH GREGORY , DEHERRERA MARK , DURLAM MARK A , TRACY CLARENCE J
发明人： GRYNKEWICH GREGORY , DEHERRERA MARK , DURLAM MARK A , TRACY CLARENCE J
IPC分类号： G11C20060101 , G11C8/02 , H01L21/00 , H01L21/8246 , H01L27/22 , H01L29/00 , H01L29/82
CPC分类号： H01L27/228 , B82Y10/00
摘要： A method for fabricating an MRAM device structure (10) includes providing a substrate (12) on which is formed a first transistor (14) and a second transistor (14). An operative memory element device (60) is formed in electrical contact with the first transistor (14). At least a portion of a false memory element device (58) is formed in electrical contact with the second transistor (14). A first dielectric layer (62) is deposited overlying the at least a portion of a false memory element device and the operative memory element device. The first dielectric layer is etched to simultaneously form a first via (66) to the at least a portion of a false memory element device (58) and a second via (64) to the operative memory element device (60). An electrically conductive interconnect layer (68) is deposited so the electrically conductive interconnect layer extends from the at least a portion of a false memory element device (58) to the operative memory element device (64).
摘要翻译：一种用于制造MRAM器件结构（10）的方法包括提供其上形成有第一晶体管（14）和第二晶体管（14）的衬底（12）。操作存储元件装置（60）形成为与第一晶体管（14）电接触。伪存储元件器件（58）的至少一部分形成为与第二晶体管（14）电接触。第一介电层（62）沉积在伪存储元件装置和操作存储元件装置的至少一部分上。第一介电层被蚀刻以同时形成第一通孔（66）到伪存储元件器件（58）的至少一部分和第二通孔（64）到操作存储元件器件（60）。沉积导电互连层（68），使得导电互连层从假存储元件装置（58）的至少一部分延伸到可操作存储元件装置（64）。

4. 发明申请

WO03102752B1 REMOVABLE STORAGE DEVICE 审中-公开
标题翻译：可移动存储设备
公开(公告)号：WO03102752B1
公开(公告)日：2004-04-15
申请号：PCT/US0316895
申请日：2003-05-30
申请人： SIMPLETECH INC
发明人： MOSHAYEDI MASOUD
IPC分类号： G06K7/00 , G11C8/02 , G06F3/00 , G06F13/00 , G06K5/00 , G06K7/08
CPC分类号： G06K7/0013 , G06K19/07739 , G06K19/07741
摘要： An adapter (102) for removal memory cards (100) including a housing (104) configured to receive a memory card (114), a connector (112) for connection to a host system (200), an interface circuit interconnecting the memory card (114) and connector (112) and adapted to allow communication therebetween and at least one movable cover pivotably engaged with the housing (104) and which, in a closed position, with the housing (104), defines a substantially enclosed cavity configured to retain the memory card (114). The adapter (102) has a generally rounded and smooth outer contour and is relatively small and light weight to provide convenient carry on the person. The adapter (102) is made of strong materials and by fully enclosing the memory card (114) provides a physically robust removable storage device.
摘要翻译：一种用于移除存储卡（100）的适配器（102），包括配置成接收存储卡（114）的壳体（104），用于连接到主机系统（200）的连接器（112），将存储卡（114）和连接器（112），并且适于允许它们之间的连通;以及至少一个与所述壳体（104）可枢转地接合的可移动盖，并且在关闭位置与所述壳体（104）限定基本封闭的空腔，保留存储卡（114）。适配器（102）具有大致圆形且光滑的外轮廓，并且相对较小且重量轻，以便方便地携带人。适配器（102）由坚固的材料制成，并且完全包围存储卡（114）提供物理上坚固的可移动存储装置。

5. 发明申请

WO02063503A2 SYSTEM AND METHOD FOR STORING AND RETRIEVING MEDICAL IMAGES AND RECORDS 审中-公开
标题翻译：用于存储和检索医学图像和记录的系统和方法
公开(公告)号：WO02063503A2
公开(公告)日：2002-08-15
申请号：PCT/US0143131
申请日：2001-11-21
申请人： HOWTEK INC , STERRITT JANET R
发明人： STERRITT JANET R
IPC分类号： G06F17/30 , G11C8/02
CPC分类号： G06F17/3028 , G06F17/30274 , G06F19/321
摘要： A system and method for recording removable media (such as data CDs) that include information enabling data to be read from a proprietary standard, such as DICOM, on any predetermined computer platform without the need of specific computer hardware or software is provided. A specialist/medical facility computer receives data from a variety of sources/modalities including an image scanner, a network transporting DICOM-format data, document scanners and supporting text data therefor, and forms the data into appropriate files and directories in the DICOM format. These data files are recorded on a removable media, such as a CD, along with various applications and other information that can be executed on a computer that may not include DICOM hardware and software. To this end, the removable media can include a universal viewer application that forms associations with data stored on the media so any interested party with a PC can view the data in the same form as the original modality. In this manner the patient can provide unedited data to a variety of interested parties.
摘要翻译：提供了一种用于记录可移动介质（例如数据CD）的系统和方法，其包括使得能够从任何预定计算机平台上的专有标准（诸如DICOM）读取数据的信息，而不需要特定的计算机硬件或软件。专家/医疗设备计算机从各种来源/模式接收数据，包括图像扫描器，传输DICOM格式数据的网络，文档扫描仪和支持的文本数据，并将数据形成为DICOM格式的适当的文件和目录。这些数据文件被记录在诸如CD的可移动介质上，以及可以在不包括DICOM硬件和软件的计算机上执行的各种应用和其他信息。为此，可移动介质可以包括与存储在介质上的数据形成关联的通用查看器应用程序，所以任何具有PC的感兴趣方可以以与原始模式相同的形式来查看数据。以这种方式，患者可以向各种感兴趣的方提供未经编辑的数据。

6. 发明申请

WO01071722A1 MULTIDIMENSIONAL ADDRESSING ARCHITECTURE FOR ELECTRONIC DEVICES 审中-公开
标题翻译：电子设备的多维寻址架构
公开(公告)号：WO01071722A1
公开(公告)日：2001-09-27
申请号：PCT/NO2001/000124
申请日：2001-03-22
IPC分类号： G11C11/41 , G09F9/30 , G09G3/20 , G11C5/02 , G11C8/00 , G11C8/02 , G11C8/14 , G11C11/4193 , G11C13/02
CPC分类号： G11C8/14 , B82Y10/00 , G11C8/00 , G11C2213/71 , G11C2213/77 , G11C2213/81
摘要： In a means for providing addressability in an apparatus comprising one or more volume elements which together with said means form part of a matrix in the apparatus and wherein a volume element comprises one or more cells with a data storage or processing functionality, said means establishes an electrical connection to specific cells by means of electrodes in the matrix and thereby defining a cell in the volume element. Said means comprises at least three sets of plural strip-like electrodes, the strip-like electrodes of each set being provided in substantially parallel relationship to each other in a two-dimensional and planar layer forming an additional part of the matrix. A set of strip-like electrodes in one layer is oriented at an angle to the projected angle of orientation of the electrodes sets in proximal neighbouring layers onto this one layer, such that the sets of strip-like electrodes in proximal neighbouring layers exhibit a mutual non-orthogonal relationship. A selective addressing of a cell takes place applying current or voltage to selected electrodes in each electrode set. An apparatus comprising a means of this kind is realized by a stack of two or more matrices located on a substrate, thus implementing a volumetric device for data storage or data processing.
摘要翻译：在用于在包括一个或多个体积元素的装置中提供可寻址性的装置中，所述体积元素与所述装置一起形成装置中的矩阵的一部分，并且其中体积元素包括具有数据存储或处理功能的一个或多个单元，所述装置建立通过基质中的电极与特定细胞电连接，从而在体积元素中限定细胞。所述装置包括至少三组多个条状电极，每组的条状电极在形成基质的另外部分的二维和平面层中彼此基本平行地设置。在一层中的一组带状电极被定向成与邻近相邻层中的电极组的取向的投影角度成一角度，使得邻近相邻层中的带状电极组呈现相互非正交关系。对每个电极组中的选定电极施加电流或电压，进行电池的选择性寻址。包括这种装置的装置由位于基板上的两个或更多个矩阵的堆栈实现，从而实现用于数据存储或数据处理的容积装置。

7. 发明申请

WO2004095515B1 METHODS FOR CONTRACTING CONDUCTING LAYERS OVERLYING MAGNETOELECTRONIC ELEMENTS OF MRAM DEVICES 审中-公开
标题翻译：收缩MRAM器件的磁电子元件的导电层的方法
公开(公告)号：WO2004095515B1
公开(公告)日：2005-03-17
申请号：PCT/US2004011872
申请日：2004-04-16
申请人： FREESCALE SEMICONDUCTOR INC , GRYNKEWICH GREGORY W , BUTCHER BRIAN R , DURLAM MARK A , KYLER KELLY , SNYDER CHARLES A , SMITH KENNETH H , TRACY CLARENCE J
发明人： GRYNKEWICH GREGORY W , BUTCHER BRIAN R , DURLAM MARK A , KYLER KELLY , SNYDER CHARLES A , SMITH KENNETH H , TRACY CLARENCE J , WILLIAMS RICHARD
IPC分类号： G11C11/15 , H01L21/8246 , H01L43/12 , G11C8/02 , G11C11/00 , H01L43/00
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , H01L43/12
摘要： A method for contacting an electrically conductive layer overlying a magnetoelectronics element includes forming a memory element layer overlying a dielectric region. A first electrically conductive layer (26) is deposited overlying the memory element layer (18). A first dielectric layer (28) is deposited overlying the first electrically conductive layer (26) and is patterned and etched to form a first masking layer (28). Using the first masking layer (28), the first electrically conductive layer (26) is etched. A second dielectric layer (36) is deposited overlying the first masking layer (28) and the dielectric region. A portion of the second dielectric layer (36) is removed to expose the first masking layer (28). The second dielectric layer (36) and the first masking layer (28) are subjected to an etching chemistry such that the first masking layer (28) is etched at a faster rate than the second dielectric layer (36). The etching exposes the first electrically conductive layer (26).
摘要翻译：用于接触覆盖磁电元件的导电层的方法包括形成覆盖介电区域的存储元件层。沉积第一导电层（26），覆盖存储元件层（18）。沉积覆盖第一导电层（26）的第一介电层（28），并将其图案化并蚀刻以形成第一掩模层（28）。使用第一掩模层（28），蚀刻第一导电层（26）。沉积覆盖第一掩模层（28）和介电区域的第二介电层（36）。第二电介质层（36）的一部分被去除以暴露第一掩模层（28）。对第二介电层（36）和第一掩模层（28）进行蚀刻化学处理，使得以比第二介电层（36）更快的速率蚀刻第一掩模层（28）。蚀刻暴露第一导电层（26）。

8. 发明申请

WO0249035A3 MEMORY DEVICE AND METHOD FOR THE OPERATION OF THE SAME 审中-公开
标题翻译：存储设备与方法进行操作
公开(公告)号：WO0249035A3
公开(公告)日：2003-01-23
申请号：PCT/DE0104524
申请日：2001-12-03
申请人： INFINEON TECHNOLOGIES AG , HOENIGSCHMID HEINZ , MUELLER GERHARD
发明人： HOENIGSCHMID HEINZ , MUELLER GERHARD
IPC分类号： G11C8/02 , G11C11/15 , G11C11/22 , H01L21/8246 , H01L27/105 , H01L27/115
CPC分类号： G11C11/22
摘要： The aim of the invention is to guarantee a high degree of flexibility and a compact construction. To this end, the existing plate conduction device (50) of a memory device (1) which functions on the basis of a hysteresis process is configured to detect the state of a memory capacitor (10) and hence, the information that is stored.
摘要翻译：为了确保高的灵活性和紧凑的结构的现有的板线装置（50），用于检测一个存储电容器（10），从而所存储的信息的状态时，它在存储装置（1），其滞后工艺以形成的基础上操作，提出了

9. 发明申请

WO00021093A1 SPATIALLY-SPECTRALLY SWEPT OPTICAL MEMORIES AND ADDRESSING METHODS 审中-公开
标题翻译：空间光谱光学记忆和寻址方法
公开(公告)号：WO00021093A1
公开(公告)日：2000-04-13
申请号：PCT/US1999/023236
申请日：1999-10-05
IPC分类号： G11B7/0045 , G11B7/005 , G11B7/125 , G11C8/02 , G11C13/00 , G11C13/04 , G11C13/06
CPC分类号： G11B7/126 , G11B7/00453 , G11B7/0052 , G11B7/127 , G11B7/128
摘要： An optical data storage system (5) directs a reference beam (21) and a data beam (23) to a storage material (16) having an inhomogeneous linewidth. The data beam (23) is modulated to contain data to be stored in the storage material (16). The reference beam (21) and the data beam (23) illuminate storage cells of the storage material (16), causing data to be stored. The reference beam (21) and the data beam (23) spatially scan the cells and are frequency swept during their respective spatial scans. Data is retrieved from the cells by illuminating the storage material (16) with reference beam (21) to produce a reconstructed data beam. In an embodiment, the reference beam (21) and the data beam (23) illuminate the storage cells simultaneoulsy. The reconstructed data beam is detected as a heterodyne signal produced by mixing the reconstructed data beam and the reference beam in a detector.
摘要翻译：光学数据存储系统（5）将参考光束（21）和数据光束（23）引导到具有不均匀线宽的存储材料（16）。数据波束（23）被调制以包含要存储在存储材料（16）中的数据。参考光束（21）和数据光束（23）照射存储材料（16）的存储单元，导致数据被存储。参考光束（21）和数据光束（23）在空间扫描单元并且在它们各自的空间扫描期间频率扫描。通过用参考光束（21）照射存储材料（16）从单元中检索数据，以产生重建的数据光束。在一个实施例中，参考光束（21）和数据光束（23）同时照亮存储单元。被重建的数据波束被检测为通过将重建的数据波束和参考波束混合在检测器中而产生的外差信号。

10. 发明申请

WO98048427A1 EMBEDDED ROM WITH RAM VALID BITS FOR FETCHING ROM-CODE UPDATES FROM EXTERNAL MEMORY 审中-公开
标题翻译：嵌入式ROM与RAM有效位用于从外部存储器中切换ROM代码更新
公开(公告)号：WO98048427A1
公开(公告)日：1998-10-29
申请号：PCT/US1998/008199
申请日：1998-04-22
IPC分类号： G06F9/445 , G06F11/00 , G06F11/10 , G11C11/00 , G11C17/12 , G11C7/00 , G06F9/04 , G11C8/02 , G11C17/00
CPC分类号： G06F9/328 , G06F8/66 , G06F11/0763 , G06F11/1008 , G11C11/005 , G11C17/12
摘要： An embedded ROM has a column of static RAM cells (14) attached to the end of the row lines. When a row of ROM cells (12) is activated by the row line, a RAM cell (14) is also activated by the row line. The RAM cell indicates if the data in the selected row's ROM cells is valid. When the RAM cell indicates that the ROM data is not valid, external memory (20) is read to obtain a patched instruction and the ROM data is ignored. The ROM's base address is translated to a base address in external memory of patch code. The ROM's offset address is used as the offset into the patch-code region of the external memory. Thus address translation is minimal as the offset is not translated.
摘要翻译：嵌入式ROM具有附加到行行末端的一列静态RAM单元（14）。当一列ROM单元（12）被行线激活时，RAM单元（14）也被行线激活。 RAM单元指示所选行的ROM单元中的数据是否有效。当RAM单元指示ROM数据无效时，读取外部存储器（20）以获得修补指令，并忽略ROM数据。 ROM的基地址被翻译为补丁代码的外部存储器中的基地址。 ROM的偏移地址用作外部存储器的补丁码区域的偏移量。因此，地址转换是最小的，因为偏移量未被翻译。

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