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1. 发明申请

WO2005001899A3 NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME 审中-公开
标题翻译：非挥发性电化学效应装置和使用其的电路及其形成方法
公开(公告)号：WO2005001899A3
公开(公告)日：2005-06-09
申请号：PCT/US2004018349
申请日：2004-06-09
申请人： NANTERO INC , BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M , VOGELI BERNHARD , BROCK DARREN K , JAIPRAKASH VENKATACHALAM C
发明人： BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M , VOGELI BERNHARD , BROCK DARREN K , JAIPRAKASH VENKATACHALAM C
IPC分类号： G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , G11C23/00 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect transistor utilizes a nanatube-based mechanical switch (30). The switch location can be at the source, drain or gate locations of the field effect transistor. Under one embodiment, the field effect device includes a source region and a drain region with a channel region (27) disposed therebetween. The source region is connected to a corresponding terminal (T2). A gate structure is disposed over the channel region and connected to a corresponding terminal (T1). A nanotube switching element (30) is responsive to a first control terminal (T3) and a second control terminal (T4) and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal.
摘要翻译：非易失性场效应器件和使用其的电路。非易失性场效应晶体管利用基于纳米管的机械开关（30）。开关位置可以在场效应晶体管的源极，漏极或栅极位置。在一个实施例中，场效应器件包括源极区域和漏极区域，其间设置有沟道区域（27）。源极区域连接到相应的端子（T2）。栅极结构设置在沟道区域上并连接到相应的端子（T1）。纳米管开关元件（30）响应于第一控制端（T3）和第二控制端（T4），并且电连接地位于漏区和与漏区对应的端子之间。纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或闭合漏极区域及其对应端子之间的电连通路径。

2. 发明申请

WO2004088719A2 NANOTUBE-ON-GATE FET STRUCTURES AND APPLICATIONS 审中-公开
标题翻译： NANOTUBE-ON-GATE FET结构和应用
公开(公告)号：WO2004088719A2
公开(公告)日：2004-10-14
申请号：PCT/US2004009248
申请日：2004-03-26
申请人： NANTERO INC , RUECKES THOMAS , SEGAL BRENT M , VOGELI BERNHARD , BROCK DARREN K , JAIPRAKASH VENKATACHALAM C
发明人： RUECKES THOMAS , SEGAL BRENT M , VOGELI BERNHARD , BROCK DARREN K , JAIPRAKASH VENKATACHALAM C
IPC分类号： G11C13/02 , G11C23/00 , H01L21/8246 , H01L21/8247 , H01L27/112 , H01L27/115 , H01L51/00 , H01L51/30 , H01L
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , G11C2213/17 , H01L27/112 , H01L27/11233 , H01L27/115 , H01L27/11521 , H01L51/0048 , H01L51/0052
摘要： Nanotube on gate NhT structures and applications of such, including n crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4F . Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n crossbar array having n non-volatile transistor devices, but require only 2n control lines.
摘要翻译：纳米管门NhT结构及其应用，包括仅需要2n条控制线的n <2>条。非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域以及设置在源极和漏极区域之间的第二半导体类型的材料的沟道区域。栅极结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上方的绝缘体上。控制门由半导体或导电材料中的至少一种制成。机电偏转型纳米管开关元件与栅极结构和控制栅极结构中的一个固定接触，并且不与栅极结构和控制栅极结构中的另一个固定接触。该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。装置的某些实施例具有约4F 2的面积。其他实施例包括释放线与纳米管开关元件间隔开定位，并且具有平行于源极和漏极扩散的取向的水平取向。其他实施例提供了具有n 2个非易失性晶体管器件的n 2交叉开关阵列，但仅需要2n个控制线。

3. 发明申请

WO2005031299A8 SENSOR PLATFORM USING A NON-HORIZONTALLY ORIENTED NANOTUBE ELEMENT 审中-公开
标题翻译：传感器平台使用非水平的纳米管元件
公开(公告)号：WO2005031299A8
公开(公告)日：2005-07-21
申请号：PCT/US2004014999
申请日：2004-05-12
申请人： NANTERO INC , SEGAL BRENT M , RUECKES THOMAS , VOGELI BERNHARD , BROCK DARREN , JAIPRAKASH VENKATACHALAM C
发明人： SEGAL BRENT M , RUECKES THOMAS , VOGELI BERNHARD , BROCK DARREN , JAIPRAKASH VENKATACHALAM C
IPC分类号： B81B3/00 , G01N27/00 , G01N27/02 , G01N27/12 , G01N27/22 , G01N27/414 , G01N33/487 , G01R15/00 , G01N
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises prederivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：介绍传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施例中，传感器元件包括预衍射或预功能化的纳米管。在其它实施例中，传感器材料在提供结构之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

4. 发明申请

WO2005019793A2 SENSOR PLATFORM USING A HORIZONTALLY ORIENTED NANOTUBE ELEMENT 审中-公开
标题翻译：传感器平台使用水平面的纳米管元件
公开(公告)号：WO2005019793A2
公开(公告)日：2005-03-03
申请号：PCT/US2004014998
申请日：2004-05-12
申请人： NANTERO INC , SEGAL BRENT M , RUECKES THOMAS , VOGELI BERNHARD , BROCK DARREN , JAIPRAKASH VENKATACHALAM C
发明人： SEGAL BRENT M , RUECKES THOMAS , VOGELI BERNHARD , BROCK DARREN , JAIPRAKASH VENKATACHALAM C
IPC分类号： B81B3/00 , G01N27/00 , G01N27/02 , G01N27/12 , G01N27/22 , G01N27/414 , G01N33/487 , G01R15/00 , G01N
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.
摘要翻译：描述了传感器平台及其制造方法，并且包括具有包括纳米管或其他纳米结构（例如纳米线）的水平定向的传感器元件的平台。在某些实施方案中，传感器元件对分析物具有亲和力。在某些实施方案中，这种传感器元件包括一个或多个原始纳米管，并且在某些实施方案中，其包含衍生化或官能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在结构上提供纳米管的集合; 定义纳米管集合内的图案; 去除部分集合，使得图案化的集合保持形成传感器元件; 以及提供用于电感测传感器电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在某些实施方案中，传感器材料在提供在结构上或在图案化之后被衍生化或官能化。在某些实施例中，大规模阵列包括多个传感器。

5. 发明申请

WO2005031299A2 SENSOR PLATFORM USING A NON-HORIZONTALLY ORIENTED NANOTUBE ELEMENT 审中-公开
标题翻译：使用非水平取向的纳米管元件的传感器平台
公开(公告)号：WO2005031299A2
公开(公告)日：2005-04-07
申请号：PCT/US2004014999
申请日：2004-05-12
申请人： NANTERO INC , SEGAL BRENT M , RUECKES THOMAS , VOGELI BERNHARD , BROCK DARREN , JAIPRAKASH VENKATACHALAM C
发明人： SEGAL BRENT M , RUECKES THOMAS , VOGELI BERNHARD , BROCK DARREN , JAIPRAKASH VENKATACHALAM C
IPC分类号： B81B3/00 , G01N27/00 , G01N27/02 , G01N27/12 , G01N27/22 , G01N27/414 , G01N33/487 , G01R15/00 , G01N
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises prederivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：描述传感器平台及其制造方法。描述了具有非水平取向的传感器元件的平台，其包括一个或多个纳米结构例如纳米管。在某些实施方案中，传感器元件具有或被制造成对分析物具有亲和力。在某些实施方案中，这种传感器元件包含一个或多个原始纳米管。在某些实施方案中，传感器元件包含衍生的或官能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在该结构上提供一个或多个纳米管以为传感器元件提供材料; 并提供电路来电传感传感器元件的电特性。在某些实施方案中，传感器元件包含预先化或预功能化的纳米管。在其他实施例中，传感器材料在设置在结构上之后或图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

6. 发明申请

WO2004072334A3 NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 审中-公开
标题翻译： NANOFABRIC ARTICLES AND METHODS OF MATERING THE SAME
公开(公告)号：WO2004072334A3
公开(公告)日：2005-04-07
申请号：PCT/US2004004106
申请日：2004-02-12
申请人： NANTERO INC , JAIPRAKASH VENKATACHALAM C , WARD JONATHAN W , RUECKES THOMAS , SEGAL BRENT M
发明人： JAIPRAKASH VENKATACHALAM C , WARD JONATHAN W , RUECKES THOMAS , SEGAL BRENT M
IPC分类号： B81B3/00 , G11C13/02 , G11C23/00 , H01H59/00 , B32B7/00 , H01L27/10 , H01L29/73 , H01L47/00 , H05K1/03
CPC分类号： G11C23/00 , B81B2201/016 , B81B2203/0127 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , G11C13/025 , G11C14/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094
摘要： A discrete electro-mechanical device includes a structure (182) having an electrically-conductive trace. A defined patch of nanotube fabric (154) is disposed in spaced relation to the trace; and the defined patch of nanotube fabric (154) is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric (154). Under certain embodiments, the structure (182) includes a defined gap (180) into which the electrically conductive trace is disposed.
摘要翻译：分立的机电装置包括具有导电迹线的结构（182）。定义的纳米管织物片段（154）以与纹迹成间隔的关系设置; 并且所述限定的纳米管织物片段（154）在第一状态和第二状态之间是机电偏转的。在第一状态下，纳米管制品与痕迹接触。低电阻信号路径与限定的纳米片（154）电连通。在某些实施例中，结构（182）包括设置有导电迹线的限定的间隙（180）。

7. 发明申请

WO2004072335A2 DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有垂直处理的纳米制品的装置及其制造方法
公开(公告)号：WO2004072335A2
公开(公告)日：2004-08-26
申请号：PCT/US2004004107
申请日：2004-02-12
申请人： NANTERO INC , JAIPRAKASH VENKATACHALAM C , WARD JONATHAN W , RUECKES THOMAS , SEGAL BRENT M
发明人： JAIPRAKASH VENKATACHALAM C , WARD JONATHAN W , RUECKES THOMAS , SEGAL BRENT M
IPC分类号： B81B3/00 , G11C13/02 , G11C23/00 , H01H59/00 , D01F
CPC分类号： G11C23/00 , B81B2201/016 , B81B2203/0127 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , G11C13/025 , G11C14/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094
摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.
摘要翻译：描述了使用垂直布置的纳米制品的机电开关和存储单元及其制造方法。机电装置包括具有主要水平表面和形成在其中的通道的结构。通道中有导电迹线; 以及垂直悬挂在所述通道中的与所述通道的垂直壁成间隔开的纳米管制品。该物品在水平方向上可电导向导电迹线偏转。在某些实施方案中，纳米管制品的垂直悬浮程度由薄膜工艺限定。在某些实施方案中，纳米管制品的垂直悬浮程度为约50纳米或更小。在某些实施例中，纳米管制品被夹持在布置在纳米管制品的一些纳米管之间的多孔空间中的导电材料上。在某些实施方案中，纳米管制品由多孔纳米纤维形成。在某些实施例中，取决于器件结构，纳米管制品在机电上可偏转成与导电迹线接触，并且触点是易失性状态或非易失性状态。在某些实施例中，垂直取向的装置被布置成各种形式的三轨迹装置。在某些实施例中，信道可以用于多个独立设备，或用于共享公共电极的设备。

8. 发明申请

WO2005048296A2 NANOTUBE-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS AND CIRCUITS MADE FROM SAME 审中-公开
标题翻译：具有多个控制器的纳米级开关元件及其相应的电路
公开(公告)号：WO2005048296A2
公开(公告)日：2005-05-26
申请号：PCT/US2004027455
申请日：2004-08-12
申请人： NANTERO INC , BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M
发明人： BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M
IPC分类号： G11C11/00 , G11C11/21 , G11C11/50 , G11C13/02 , G11C23/00 , H01H1/027 , H01H59/00 , H01L21/00 , H01L27/28 , H01L29/06 , H01L29/73 , H01L29/772 , H01L29/78 , H01L51/30 , H01L
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.
摘要翻译：基于纳米管的开关元件具有由此制成的多个控制和电路。开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。根据结构，开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

9. 发明申请

WO2006137876A3 RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS 审中-公开
标题翻译：随机存取存储器，包括纳米管开关元件
公开(公告)号：WO2006137876A3
公开(公告)日：2007-05-31
申请号：PCT/US2005033718
申请日：2005-09-20
申请人： NANTERO INC , BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M
发明人： BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M
IPC分类号： G01B11/26 , G01C1/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C14/00 , G11C23/00 , H01H1/0094
摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line. The release electrode of the first nanotube switching element is coupled to the release electrode of the second nanotube switching element and wherein both release electrodes are coupled to a release line. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
摘要翻译：随机存取存储器包括纳米管开关元件。存储单元包括第一和第二纳米管切换元件和电子存储器。每个纳米管开关元件包括输出节点，具有至少一个导电纳米管的纳米管通道元件和具有相对于纳米管通道元件设置的设定电极和释放电极的控制结构，以可控地形成和取消导电通道在所述通道电极和所述输出节点之间。电子存储器具有交叉耦合的第一和第二逆变器。第一反相器的输入节点耦合到第一纳米管开关元件的设定电极和第二纳米管开关元件的输出节点。第二反相器的输入节点耦合到第二纳米管开关元件的设定电极和第一纳米管开关元件的输出节点; 并且沟道电极耦合到沟道电压线。第一纳米管开关元件的释放电极耦合到第二纳米管开关元件的释放电极，并且其中两个释放电极耦合到释放线。电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

10. 发明申请

WO2006132658A2 RESISTIVE ELEMENTS USING CARBON NANOTUBES 审中-公开
标题翻译：使用碳纳米管的电阻元件
公开(公告)号：WO2006132658A2
公开(公告)日：2006-12-14
申请号：PCT/US2005033716
申请日：2005-09-20
申请人： NANTERO INC , BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M
发明人： BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M
IPC分类号： H01C10/00
CPC分类号： H01C7/06 , H01C7/003 , H01C7/005 , H01C7/006 , H01C10/306 , H01C17/0652 , H01C17/232 , H01C17/283 , H01L28/22
摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要翻译：电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。体积电阻是可调谐的。

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