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    • 4. 发明申请
    • LPP EUV LIGHT SOURCE
    • LPP EUV光源
    • WO2005089131A2
    • 2005-09-29
    • PCT/US2005/007063
    • 2005-03-03
    • CYMER, INC.PARTLO, William, N.BROWN, Daniel, J., W.FOMENKOV, Igor, V.BOWERING, Norbert, R.RETTIG, Curtis, L.MACFARLANE, Joseph, J.ERSHOV, Alexander, I.HANSSON, Bjorn, A., M.
    • PARTLO, William, N.BROWN, Daniel, J., W.FOMENKOV, Igor, V.BOWERING, Norbert, R.RETTIG, Curtis, L.MACFARLANE, Joseph, J.ERSHOV, Alexander, I.HANSSON, Bjorn, A., M.
    • G03F7/20H05G2/00
    • H05G2/003B82Y10/00G03F7/70033H01S3/0085H01S3/0092H01S3/1611H01S3/1653H01S3/2255H01S3/2325H01S3/2375H01S3/2383H05G2/005H05G2/008
    • An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation .pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.
    • 描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法,其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体 具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体,以将等离子体中的发射材料压缩到等离子体的发射区域。 等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲,以具有相关联的较低临界密度,从而在由波长限定的等离子体区域内的等离子体内发生吸收 的等离子体照射脉冲与初始靶照射部位充分分离,以实现发射材料的压缩,并且可以压缩发射区域。 激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。 可以从初始目标表面去除等离子体照射脉冲的沉积区域,以确保有利地发射等离子体的压缩。 高转换效率的激光产生的等离子体极紫外(“EUV”)光源可以包括激光初始靶照射脉冲发生机构,用目标照射脉冲照射等离子体引发目标,以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。
    • 5. 发明申请
    • DISCHARGE PRODUCED PLASMA EUV LIGHT SOURCE
    • 排放生产等离子体光源
    • WO2004081503A2
    • 2004-09-23
    • PCT/US2004/006551
    • 2004-03-03
    • CYMER, INC.PARTLO, William, N.BLUMENSTOCK, Gerry, M.BOWERING, NorbertBRUZZONE, Kent, A.COBB, Dennis, W.DYER, Timothy, S.DUNLOP, JohnFOMENKOV, Igor, V.HYSHAM, James, ChristopherOLIVER, Roger, I.PALENSCHAT, Frederick, A.PAN, Xiaojiang, J.RETTIG, Curtis, L.SIMMONS, Rodney, S.WALKER, JohnWEBB, Kyle, R.HOFMANN, Thomas
    • PARTLO, William, N.BLUMENSTOCK, Gerry, M.BOWERING, NorbertBRUZZONE, Kent, A.COBB, Dennis, W.DYER, Timothy, S.DUNLOP, JohnFOMENKOV, Igor, V.HYSHAM, James, ChristopherOLIVER, Roger, I.PALENSCHAT, Frederick, A.PAN, Xiaojiang, J.RETTIG, Curtis, L.SIMMONS, Rodney, S.WALKER, JohnWEBB, Kyle, R.HOFMANN, Thomas
    • G01J
    • H01S3/005B82Y10/00G03F7/70033G03F7/70166G03F7/70175G03F7/70908G03F7/70916H01S3/225H05G2/003H05G2/005H05H1/06
    • An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis of rotation and an ellipse in another. The electrodes may be supplied with a discharge pulse shaped to produce a modest current during the axial run out phase of the discharge and a peak occurring during the radial compression phase of the discharge. The light source may comprise a turbomolecular pump having an inlet connected to the generation chamber and operable to preferentially pump more of the source gas than the buffer gas from the chamber. The source may comprise a tuned electrically conductive electrode comprising: a differentially doped ceramic material doped in a first region to at least select electrical conductivity and in a second region at least to select thermal conductivity. The first region may be at or near the outer surface of the electrode structure and the ceramic material may be SiC or alumina and the dopant is BN or a metal oxide, including SiO or TiO 2 . The source may comprise a moveable electrode assembly mount operative to move the electrode assembly mount from a replacement position to an operating position, with the moveable mount on a bellows. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members. The shells may be biased with a voltage. The debris shield may be fabricated using off focus laser radiation. The anode may be cooled with a hollow interior defining two coolant passages or porous metal defining the passages. The debris shield may be formed of pluralities of large, intermediate and small fins attached either to a mounting ring or hub or to each other with interlocking tabs that provide uniform separation and strengthening and do not block any significant amount of light.
    • 公开了一种DPP EUV源,其可以包括使用从离开等离子体的碎片产生金属卤化物的金属卤素气体的碎片减缓装置。 EUV源可以具有碎片屏蔽,其可以包括多个曲线屏蔽构件,其具有通过与焦点对准的光通道连接的内表面和外表面,该屏蔽构件可以与它们之间的开放空间交替,并且可以具有形成 在一个旋转轴上的圆圈和另一个轴上的椭圆。 电极可以被供给放电脉冲,该放电脉冲在放电的轴向耗尽阶段期间产生适度的电流,并且在放电的径向压缩阶段期间发生峰值。 光源可以包括涡轮分子泵,其具有连接到发电室的入口,并且可操作以比来自该室的缓冲气体优先地泵送更多的源气体。 源可以包括调谐的导电电极,包括:掺杂在第一区域中以至少选择电导率的差分掺杂陶瓷材料,并且在第二区域中至少选择导热性。 第一区域可以在电极结构的外表面处或附近,并且陶瓷材料可以是SiC或氧化铝,并且掺杂剂是BN或包括SiO或TiO 2的金属氧化物。 源可以包括可移动电极组件安装件,其可操作以将电极组件安装座从更换位置移动到操作位置,可移动安装件在波纹管上。 源可以具有可操作地连接到收集器的温度控制机构,并且可操作地调节相应壳体部件的温度,以保持温度相关几何形状优化来自相应外壳部件的入射反射的扫掠角,或机械定位器 壳成员。 壳可能会被电压偏置。 可以使用离焦激光辐射来制造碎片屏蔽。 阳极可以用限定两个冷却剂通道或限定通道的多孔金属的中空内部冷却。 碎片屏蔽可以由连接到安装环或轮毂的多个大的,中间的和小的翅片形成,或者彼此具有提供均匀分离和强化并且不阻挡任何显着量的光的互锁突起。