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1. 发明申请

WO2005008643A3 RE-RECORDABLE DATA STORAGE MEDIUM UTILIZING CONDUCTION BARRIER 审中-公开
标题翻译：可重新记录的数据存储介质利用导电屏障
公开(公告)号：WO2005008643A3
公开(公告)日：2005-06-16
申请号：PCT/US2004020674
申请日：2004-06-25
申请人： HEWLETT PACKARD DEVELOPMENT CO , YEH BAO-SUNG BRUCE , REGAN MICHAEL J , GIBSON GARY A
发明人： YEH BAO-SUNG BRUCE , REGAN MICHAEL J , GIBSON GARY A
IPC分类号： G11C16/02 , H01L45/00 , G11B9/04 , G11B11/08
CPC分类号： G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/12 , H01L45/1213 , H01L45/1233 , H01L45/143
摘要： A re-recordable data storage medium (100) is disclosed. The medium in one embodiment includes a phase-changeable layer (106) and an intermediate layer (104). A junction between the intermediate layer and another layer of the medium provides a conduction barrier under no illumination that is substantially diminished under illumination of the regions of the phase-changeable layer that are in the appropriate phase.
摘要翻译：公开了一种可重新记录的数据存储介质（100）。一个实施例中的介质包括相变层（106）和中间层（104）。中间层和另一介质层之间的接合处在无照明条件下提供传导阻挡层，在处于适当相位的相变层区域的照明下，该传导阻挡层显着减小。

2. 发明申请

WO2011114173A1 CHALCOGENIDE PHASE CHANGE MATERIALS AND THEIR USE 审中-公开
标题翻译： CHALCOGENIDE相变材料及其使用
公开(公告)号：WO2011114173A1
公开(公告)日：2011-09-22
申请号：PCT/GB2011/050555
申请日：2011-03-21
申请人： ISIS INNOVATION LIMITED , BORISENKO, Konstantin, B.
发明人： BORISENKO, Konstantin, B.
IPC分类号： H01L45/00 , G11B7/243 , G11C13/00 , G11B7/0045
CPC分类号： G11C13/0004 , G11B7/243 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , H01L45/06 , H01L45/1213 , H01L45/144 , H01L45/1625
摘要： According to the present invention there is provided a chalcogenide phase change material which can be converted between first and second states, wherein the material comprises a chiral species and wherein at least a portion of the material comprises the chiral species in the form of an enantiomeric excess. Methods of producing and analysing said material, as well as optical recording media and phase change memory devices comprising said material, are also provided.
摘要翻译：根据本发明，提供了可以在第一和第二状态之间转化的硫族化物相变材料，其中所述材料包括手性物质，并且其中所述材料的至少一部分包含对映体过量形式的手性物质。还提供了生产和分析所述材料的方法，以及包括所述材料的光记录介质和相变存储器件。

3. 发明申请

WO2004112046A1 DATA STORAGE MEDIUM HAVING LAYERS ACTING AS TRANSISTOR WHEN ILLUMINATED 审中-公开
标题翻译：数据存储介质在照明时作为晶体管工作
公开(公告)号：WO2004112046A1
公开(公告)日：2004-12-23
申请号：PCT/US2004/018629
申请日：2004-06-10
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YEH, Bao-Sung Bruce , REGAN, Michael J.
发明人： YEH, Bao-Sung Bruce , REGAN, Michael J.
IPC分类号： G11C13/04
CPC分类号： G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/12 , H01L45/1213 , H01L45/1233 , H01L45/143
摘要： A re-recordable data storage medium (100) of one embodiment includes a substrate layer (102), a phase-changeable layer (106), and an intermediate layer (104). The substrate layer has a semiconductor type selected from p-type and n-type. The phase-changeable layer has a first phase corresponding to a first storable logical value, and a second phase corresponding to a second storable logical value. The phase-changeable layer has a semiconductor type identical to that of the substrate layer. The intermediate layer is between the phase-changeable layer and the substrate layer, and has a semiconductor type opposite to that of the phase-changeable and substrate layer. The substrate, phase-changeable, and intermediate layers act as a transistor under selective illumination of the phase-changeable layer.
摘要翻译：一个实施例的可再记录数据存储介质（100）包括基底层（102），相变层（106）和中间层（104）。衬底层具有选自p型和n型的半导体类型。相变层具有对应于第一可存储逻辑值的第一相位和对应于第二可存储逻辑值的第二相位。相变层具有与基底层相同的半导体类型。中间层位于相变层和基底层之间，并且具有与相变基板层相反的半导体类型。衬底，可相位改变和中间层在相变层的选择性照射下用作晶体管。

4. 发明申请

WO2006051996A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2006051996A1
公开(公告)日：2006-05-18
申请号：PCT/JP2005/020983
申请日：2005-11-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , ABE, Hiroko , YUKAWA, Mikio , NOMURA, Ryoji , YAMAZAKI, Shunpei , NEMOTO, Yukie
发明人： ABE, Hiroko , YUKAWA, Mikio , NOMURA, Ryoji , YAMAZAKI, Shunpei , NEMOTO, Yukie
IPC分类号： H01L27/10 , H01L27/28 , H01L29/786 , H01L45/00 , H01L49/02 , H01L51/05 , H01Q1/38
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
摘要翻译：本发明提供了一种非易失性，易于制造并且可以额外写入的半导体器件。本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及与第天线。存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

5. 发明申请

WO2004081977A2 MULTI-TERMINAL CHALCOGENIDE SWITCHING DEVICES 审中-公开
标题翻译：多终端总线切换设备
公开(公告)号：WO2004081977A2
公开(公告)日：2004-09-23
申请号：PCT/US2004003111
申请日：2004-02-04
申请人： ENERGY CONVERSION DEVICES INC
发明人： OVSHINSKY STANFORD R , PASHMAKOV BOIL
IPC分类号： H01L45/00 , H01L
CPC分类号： H01L45/06 , G11C2213/51 , H01L45/04 , H01L45/1206 , H01L45/1213 , H01L45/1233 , H01L45/144
摘要： Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal and a control terminal. Application of a control signal to the control terminal modulates the conductivity of the chalcogenide material between the first and second terminals and/or the threshold voltage required to switch the chalcogenide material between the first and second terminals from a resistive state to a conductive state. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
摘要翻译：包括可在电阻状态和导电状态之间切换的硫族化物材料的多端子电子开关器件。这些设备包括第一终端，第二终端和控制终端。将控制信号施加到控制端子，调制第一和第二端子之间的硫族化物材料的导电性和/或将第一和第二端子之间的硫族化物材料从电阻状态切换到导通状态所需的阈值电压。这些设备可以用作电路和网络中的互连设备或信号提供设备。

6. 发明申请

WO2015139033A1 VOLTAGE REGULATION OF DEVICE FUNCTIONAL PROPERTIES 审中-公开
标题翻译：器件功能特性的电压调节
公开(公告)号：WO2015139033A1
公开(公告)日：2015-09-17
申请号：PCT/US2015/020736
申请日：2015-03-16
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人： BAUER, Uwe , BEACH, Geoffrey, S.D.
IPC分类号： H01L45/00
CPC分类号： H01L43/08 , G05D23/1951 , H01L43/02 , H01L45/085 , H01L45/1213 , H01L45/1266 , H01L45/128 , H01L45/146
摘要： Systems, methods, and apparatus are provided for tuning a functional property of a device. The device (210) includes a layer of a dielectric material (214) disposed over and forming an interface (216) with a layer of an electrically conductive target material (222). The dielectric material layer includes at least one ionic species having a high ion mobility. The target material is configured such that a potential difference applied to the device can cause the at least one ionic species to migrate reversibly across the interface into or out of the target material layer. The mobility of the at least one ionic species can be tuned by exposing the device to electromagnetic radiation and/or a temperature change.
摘要翻译：提供了用于调整设备的功能属性的系统，方法和装置。器件（210）包括设置在导电靶材料层（222）上方并形成具有导电靶材料层（222）的界面（216）的电介质材料层（214）。介电材料层包括具有高离子迁移率的至少一种离子种类。目标材料配置成使得施加到器件的电位差可导致至少一种离子物质可逆地穿过界面迁移进入或移出目标材料层。可以通过将装置暴露于电磁辐射和/或温度变化来调节至少一种离子种类的迁移率。

7. 发明申请

WO2005008643A2 RE-RECORDABLE DATA STORAGE MEDIUM UTILIZING CONDUCTION BARRIER 审中-公开
标题翻译：可重复记录的数据存储介质使用导通障碍
公开(公告)号：WO2005008643A2
公开(公告)日：2005-01-27
申请号：PCT/US2004/020674
申请日：2004-06-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YEH, Bao-Sung, Bruce , REGAN, Michael, J. , GIBSON, Gary, A.
发明人： YEH, Bao-Sung, Bruce , REGAN, Michael, J. , GIBSON, Gary, A.
IPC分类号： G11B7/00
CPC分类号： G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/12 , H01L45/1213 , H01L45/1233 , H01L45/143
摘要： A re-recordable data storage medium (100) is disclosed. The medium in one embodiment includes a phase-changeable layer (106) and an intermediate layer (104). A junction between the intermediate layer and another layer of the medium provides a conduction barrier under no illumination that is substantially diminished under illumination of the regions of the phase-changeable layer that are in the appropriate phase.
摘要翻译：公开了一种可重新记录的数据存储介质（100）。一个实施例中的介质包括相变层（106）和中间层（104）。中间层和介质的另一层之间的接合点在无照明下提供导电屏障，其在相变层的处于适当相位的区域的照明下基本上减小。

8. 发明申请

WO9748032A3 PROGRAMMABLE METALLIZATION CELL STRUCTURE AND METHOD OF MAKING SAME 审中-公开
标题翻译：可编程金属化细胞结构及其制备方法
公开(公告)号：WO9748032A3
公开(公告)日：1998-02-05
申请号：PCT/US9709367
申请日：1997-05-28
申请人： AXON TECHNOLOGIES CORP , UNIV ARIZONA
发明人： KOZICKI MICHAEL N , WEST WILLIAM C
IPC分类号： G02F1/19 , G02F1/15 , G02F1/155 , G06F12/00 , G11C13/00 , G11C13/02 , H01B1/06 , H01B1/10 , H01L21/82 , H01L21/822 , H01L27/04 , H01L27/10 , H01L27/105 , H01L45/00 , G06F
CPC分类号： G11C13/0011 , G02F1/1525 , G02F1/155 , G11C13/0069 , G11C2013/009 , G11C2213/51 , H01L45/085 , H01L45/1206 , H01L45/1213 , H01L45/1226 , H01L45/1233 , H01L45/142
摘要： A programmable metallization cell (10) ('PMC') comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (13 and 14) (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor (12) and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC. The PMC may be incorporated into a variety of technologies such as memory devices, programmable resistor/capacitor devices, optical devices, sensors, and the like. Electrodes additional to the cathode and anode can be provided to serve as outputs or additional outputs of the devices in sensing electrical characteristics which are dependent upon the extent of the dendrite.

9. 发明申请

WO1997048032A2 PROGRAMMABLE METALLIZATION CELL STRUCTURE AND METHOD OF MAKING SAME 审中-公开
标题翻译：可编程金属化细胞结构及其制备方法
公开(公告)号：WO1997048032A2
公开(公告)日：1997-12-18
申请号：PCT/US1997009367
申请日：1997-05-28
申请人： AXON TECHNOLOGIES CORPORATION , ARIZONA BOARD OF REGENTS, acting on behalf of ARIZZONA STATE UNIVERSITY
发明人： AXON TECHNOLOGIES CORPORATION , ARIZONA BOARD OF REGENTS, acting on behalf of ARIZZONA STATE UNIVERSITY , KOZICKI, Michael, N. , WEST, William, C.
IPC分类号： G06F00/00
CPC分类号： G11C13/0011 , G02F1/1525 , G02F1/155 , G11C13/0069 , G11C2013/009 , G11C2213/51 , H01L45/085 , H01L45/1206 , H01L45/1213 , H01L45/1226 , H01L45/1233 , H01L45/142
摘要： A programmable metallization cell (10) ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (13 and 14) (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor (12) and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC. The PMC may be incorporated into a variety of technologies such as memory devices, programmable resistor/capacitor devices, optical devices, sensors, and the like. Electrodes additional to the cathode and anode can be provided to serve as outputs or additional outputs of the devices in sensing electrical characteristics which are dependent upon the extent of the dendrite.
摘要翻译：可编程金属化电池（10）（“PMC”）包括快速离子导体，例如硫族化物金属离子和多个电极（13和14）（例如，阳极和阴极），其设置在快速离子导体（12）并且彼此隔开一定距离。优选地，快速离子导体包含具有IB族或IIB族金属的硫族化物，阳极包括银，阴极包括铝或其它导体。当向阳极和阴极施加电压时，非挥发性金属枝晶从阴极沿快离子导体的表面向阳极生长。枝晶的生长速率是施加的电压和时间的函数。可以通过去除电压来停止枝晶的生长，并且可以通过反转阳极和阴极的电压极性来缩回枝晶。枝晶长度的变化影响了PMC的电阻和电容。 PMC可以并入各种技术，例如存储器件，可编程电阻器/电容器器件，光学器件，传感器等。可以提供除了阴极和阳极之外的电极以用作感测电特性的器件的输出或附加输出，这取决于枝晶的程度。

10. 发明申请

WO2017115340A1 MEMRISTOR BASED SENSOR FOR RADIATION DETECTION 审中-公开
标题翻译：基于MEMRISTOR的传感器进行辐射检测
公开(公告)号：WO2017115340A1
公开(公告)日：2017-07-06
申请号：PCT/IB2016/058126
申请日：2016-12-30
申请人： KHALIFA UNIVERSITY OF SCIENCE, TECHNOLOGY & RESEARCH
发明人： MOHAMMAD, Baker , JAOUDE, Maguy Abi , NAHLA, Heba Abu , AL-QUTAYRI, Mahmoud , OKELLY, Curtis
IPC分类号： G01T1/17 , H01L27/14 , H01L47/00 , G01T3/00
CPC分类号： G01T1/17 , G01T1/02 , G01T1/245 , G01T3/00 , H01L27/14 , H01L45/1213 , H01L45/146 , H01L45/1608
摘要： Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 µm thick layer of TiO 2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.
摘要翻译：使用一个或多个忆阻器作为辐射传感器的装置，系统和方法被启用。由于其被动低功耗特性，忆阻器作为传感器很有吸引力。医疗和环境监测是预期的用例。作为安全系统的一部分（例如在机场）检测辐射并筛选食物以进行辐射照射也是可能的用途。忆阻器作为辐射传感器可能为个人热释光剂量计（TLD）提供廉价且简单的替代方案。具有高电流和低功率操作的忆阻器器件可以连接可穿戴塑料基板。示例装置包括具有50微米厚的TiO 2忆阻器材料的两个金属条。相对于传统的纳米级忆阻器而言，该器件可能较大，但其厚度增加会显着增加辐射与忆阻器材料相互作用的可能性。

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