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1. 发明申请

WO2005083810A2 PROGRAMMABLE STRUCTURE AND DEVICE INCLUDING A METAL OXIDE ION CONDUCTOR AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：包含金属氧化物导体的可编程结构和器件及其形成方法
公开(公告)号：WO2005083810A2
公开(公告)日：2005-09-09
申请号：PCT/US2005005705
申请日：2005-02-23
申请人： AXON TECHNOLOGIES CORP , KOZICKI MICHAEL N , MITKOVA MARIA , GOPALAN CHAKRAVARTHY , BALAKRAISHNAN MURALIKRISHNAN
发明人： KOZICKI MICHAEL N , MITKOVA MARIA , GOPALAN CHAKRAVARTHY , BALAKRAISHNAN MURALIKRISHNAN
IPC分类号： H01L45/00
CPC分类号： H01L45/1658 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： A microelectronic programmable structure suitable for storing information and methods of forming and programming the structure are disclosed. The programmable structure generally includes a metal oxide ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
摘要翻译：公开了一种适用于存储信息的微电子可编程结构和形成和编程结构的方法。可编程结构通常包括金属氧化物离子导体和多个电极。可以通过向结构施加能量来改变结构的电特性，因此可以使用该结构存储信息。

2. 发明申请

WO02099517A3 MICROELECTRONIC PHOTONIC STRUCTURE AND DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：微电子光电结构及其装置及其形成方法
公开(公告)号：WO02099517A3
公开(公告)日：2003-08-07
申请号：PCT/US0217711
申请日：2002-06-04
申请人： AXON TECHNOLOGIES CORP , KOZICKI MCHAEL N
发明人： KOZICKI MCHAEL N
IPC分类号： G02F1/15 , G02F1/155
CPC分类号： G11C13/0011 , G02F1/1523 , G02F1/155 , G11C13/04
摘要： A microelectronic photonic structure and a device and a system including the structure are disclosed. The photonic structure includes an ion conductor and a plurality of electrodes. Optical properties of the structure are altered by applying energy across the electrodes.
摘要翻译：公开了一种微电子光子结构以及包括该结构的装置和系统。光子结构包括离子导体和多个电极。通过在电极上施加能量来改变结构的光学性质。

3. 发明申请

WO2003036736A3 TUNABLE CANTILEVER APPARATUS AND METHOD FOR MAKING SAME 审中-公开
公开(公告)号：WO2003036736A3
公开(公告)日：2003-05-01
申请号：PCT/US2002/034558
申请日：2002-10-28
申请人： AXON TECHNOLOGIES CORP. , KOZICKI, Michael, N.
发明人： KOZICKI, Michael, N.
IPC分类号： H01L45/00
摘要： Mass distribution within programmable surface control devices is controlled by the presence or absence of an electrodeposition of metal and/or metal ions from a solid solution upon application of a suitable electric field. One such programmable surface control device includes a tunable cantilever assembly (100) whose resonant frequency is changed by depositing and dissolving an electrodeposit (140) on a surface of a solid electrolyte layer (130) using an electric field applied between sacrificial electrode (120) and conducting cantilever tip (110).

4. 发明申请

WO9928914A3 PROGRAMMABLE SUB-SURFACE AGGREGATING METALLIZATION STRUCTURE AND METHOD OF MAKING SAME 审中-公开
标题翻译：可编程子表面聚集金属化结构及其制备方法
公开(公告)号：WO9928914A3
公开(公告)日：1999-08-26
申请号：PCT/US9825830
申请日：1998-12-04
申请人： AXON TECHNOLOGIES CORP , UNIV ARIZONA , KOZICKI MICHAEL N , WEST WILLIAM C
发明人： KOZICKI MICHAEL N , WEST WILLIAM C
IPC分类号： H01L27/04 , G11C13/02 , G11C16/02 , H01L21/82 , H01L21/822 , H01L27/10 , H01L27/105 , H01L45/00 , G11C11/34
CPC分类号： G11C13/0069 , B82Y10/00 , G11C13/0011 , G11C2013/009 , G11C2213/15 , G11C2213/72 , G11C2213/77 , H01L45/085 , H01L45/1233 , H01L45/142
摘要： A programmable sub-surface aggregating metallization structure (100) includes an ion conductor (110) such as a chalcogenide glass which includes metal ions and at least two electrodes (120, 130) disposed at opposing surfaces of the ion conductor (110). Preferably, the ion conductor (110) includes a chalcogenide material with Group IB or Group IIB metals. One of the two electrodes (120, 130) is preferably configured as a cathode and the other as an anode. When a voltage is applied to between the anode and cathode, a metal dendrite (140) grows from the cathode through the ion conductor (11) toward the anode. The grow rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back toward the cathode by reversing the voltage polarity at the anode and the cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor (110) and connects the electrodes (120, 130), thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.
摘要翻译：可编程子表面聚集金属化结构（100）包括离子导体（110），例如包括金属离子的硫族化物玻璃和设置在离子导体（110）的相对表面处的至少两个电极（120,130）。优选地，离子导体（110）包括具有IB族或IIB族金属的硫族化物材料。两个电极（120,130）中的一个优选配置为阴极，另一个作为阳极。当在阳极和阴极之间施加电压时，金属枝晶（140）从阴极通过离子导体（11）向阳极生长。可以通过去除电压来停止枝晶的生长速度，或者可以通过反转阳极和阴极的电压极性将枝晶退回到阴极。当施加电压足够长的时间时，连续的金属枝晶通过离子导体（110）生长并连接电极（120,130），从而使器件短路。然后通过施加另一个电压可以破坏连续的金属枝晶。

5. 发明申请

WO2003036736A2 TUNABLE CANTILEVER APPARATUS AND METHOD FOR MAKING SAME 审中-公开
标题翻译：可控制装置及其制造方法
公开(公告)号：WO2003036736A2
公开(公告)日：2003-05-01
申请号：PCT/US2002/034558
申请日：2002-10-28
申请人： AXON TECHNOLOGIES CORP. , KOZICKI, Michael, N.
发明人： KOZICKI, Michael, N.
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1266 , H03H3/0077 , H03H9/2457
摘要： Mass distribution within programmable surface control devices is controlled by the presence or absence of an electrodeposition of metal and/or metal ions from a solid solution upon application of a suitable electric field. One such programmable surface control device includes a tunable cantilever assembly whose resonant frequency is changed by depositing and dissolving an electrodeposit on a surface of the assembly using an electric field.
摘要翻译：可编程表面控制装置内的质量分布由施加合适的电场时由固溶体存在或不存在金属和/或金属离子的电沉积来控制。一个这样的可编程表面控制装置包括可调谐悬臂组件，其可以通过使用电场沉积和溶解电沉积物在组件的表面上来改变其共振频率。

6. 发明申请

WO2013170214A3 RESISTIVE DEVICES AND METHODS OF OPERATION THEREOF 审中-公开
标题翻译：电阻器件及其操作方法
公开(公告)号：WO2013170214A3
公开(公告)日：2014-01-23
申请号：PCT/US2013040652
申请日：2013-05-10
申请人： ADESTO TECHNOLOGIES CORP , AXON TECHNOLOGIES CORP
发明人： KAMALANATHAN DEEPAK , KOUSHAN FOROOZAN SARAH , ECHEVERRY JUAN PABLO SAENZ , DINH JOHN , HOLLMER SHANE C , KOZICKI MICHAEL
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0028 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C13/0097 , G11C2013/0071 , G11C2013/0092 , G11C2213/79
摘要： In one embodiment, a method of operating a resistive switching device 10 includes applying a signal comprising a pulse on a first terminal 1 of a two terminal resistive switching device10 having the first terminal 1 and a second terminal 2. The resistive switching device 10 has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.
摘要翻译：在一个实施例中，一种操作电阻式开关装置10的方法包括在具有第一端子1的二端电阻式开关装置10和第二端子2的第一端子1上施加包括脉冲的信号。电阻式开关装置10具有第一状态和第二状态。脉冲包括在第一时间段内从第一电压到第二电压的第一斜坡。第一时间段是脉冲总时间的至少0.1倍。

7. 发明申请

WO03079463A2 PROGRAMMABLE STRUCTURE, AN ARRAY INCLUDING THE STRUCTURE, AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：可编程结构，包括结构的阵列及其形成方法
公开(公告)号：WO03079463A2
公开(公告)日：2003-09-25
申请号：PCT/US0308152
申请日：2003-03-17
申请人： AXON TECHNOLOGIES CORP , KOZICKI MICHAEL N
发明人： KOZICKI MICHAEL N
IPC分类号： G11C11/34 , G11C11/56 , G11C13/02 , G11C16/02 , H01L21/8236 , H01L27/10 , H01L27/24 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/12 , H01L29/40 , H01L45/00 , H01L47/00
CPC分类号： G11C11/34 , B82Y10/00 , G11C11/5614 , G11C13/0011 , G11C13/04 , G11C23/00 , G11C2013/0047 , G11C2207/104 , G11C2213/15 , G11C2213/34 , G11C2213/51 , G11C2213/72 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1226 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1658 , H01L45/1675 , H01L45/1683
摘要： A microelectric programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
摘要翻译：公开了一种适用于存储信息的微电子可编程结构，以及包括形成和编程结构的结构和方法的阵列。可编程结构通常包括离子导体和多个电极。可以通过向结构施加能量来改变结构的电特性，因此可以使用该结构存储信息。

8. 发明申请

WO9748032A8 PROGRAMMABLE METALLIZATION CELL AND METHOD OF MAKING 审中-公开
标题翻译：可编程金属化细胞及其制备方法
公开(公告)号：WO9748032A8
公开(公告)日：2000-08-10
申请号：PCT/US9709367
申请日：1997-05-28
申请人： AXON TECHNOLOGIES CORP , UNIV ARIZONA STATE
发明人： KOZICKI MICHAEL N , WEST WILLIAM C
IPC分类号： G02F1/19 , G02F1/15 , G02F1/155 , G06F12/00 , G11C13/00 , G11C13/02 , H01B1/06 , H01B1/10 , H01L21/82 , H01L21/822 , H01L27/04 , H01L27/10 , H01L27/105 , H01L45/00
CPC分类号： G11C13/0011 , G02F1/1525 , G02F1/155 , G11C13/0069 , G11C2013/009 , G11C2213/51 , H01L45/085 , H01L45/1206 , H01L45/1213 , H01L45/1226 , H01L45/1233 , H01L45/142
摘要： A programmable metallization cell (10) ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (13 and 14) (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor (12) and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC. The PMC may be incorporated into a variety of technologies such as memory devices, programmable resistor/capacitor devices, optical devices, sensors, and the like. Electrodes additional to the cathode and anode can be provided to serve as outputs or additional outputs of the devices in sensing electrical characteristics which are dependent upon the extent of the dendrite.
摘要翻译：可编程金属化电池（10）（“PMC”）包括快速离子导体，例如硫族化物金属离子和多个电极（13和14）（例如，阳极和阴极），其设置在快速离子导体（12）并且彼此隔开一定距离。优选地，快速离子导体包含具有IB族或IIB族金属的硫族化物，阳极包括银，阴极包括铝或其它导体。当向阳极和阴极施加电压时，非挥发性金属枝晶从阴极沿快离子导体的表面向阳极生长。枝晶的生长速率是施加的电压和时间的函数。可以通过去除电压来停止枝晶的生长，并且可以通过反转阳极和阴极的电压极性来缩回枝晶。枝晶长度的变化影响了PMC的电阻和电容。 PMC可以并入各种技术，例如存储器件，可编程电阻器/电容器器件，光学器件，传感器等。可以提供除了阴极和阳极之外的电极以用作感测电特性的器件的输出或附加输出，这取决于枝晶的程度。

9. 发明申请

WO2005124788A2 NANOSCALE PROGRAMMABLE STRUCTURES AND METHODS OF FORMING AND USING SAME 审中-公开
标题翻译：纳米级可编程结构及其形成和使用方法
公开(公告)号：WO2005124788A2
公开(公告)日：2005-12-29
申请号：PCT/US2005020738
申请日：2005-06-14
申请人： AXON TECHNOLOGIES CORP , KOZICKI MICHAEL N
发明人： KOZICKI MICHAEL N
IPC分类号： G11C13/02 , G11C16/02 , H01L29/06 , H01L45/00
CPC分类号： G11C13/0007 , G11C13/0011 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/51 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/1675 , H01L45/1683 , Y10S977/81 , Y10S977/831 , Y10S977/943
摘要： A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms within or on the ion conductor and between the electrodes. The presence or absence of the conductive region can be used to store information in memory devices.
摘要翻译：公开了一种可编程结构和装置以及形成和使用该结构和装置的方法。该结构包括可溶性电极，离子导体和惰性电极。在施加足够的电压时，在离子导体内或电极之间形成导电区域。导电区域的存在或不存在可用于将信息存储在存储器件中。

10. 发明申请

WO9748032A3 PROGRAMMABLE METALLIZATION CELL STRUCTURE AND METHOD OF MAKING SAME 审中-公开
标题翻译：可编程金属化细胞结构及其制备方法
公开(公告)号：WO9748032A3
公开(公告)日：1998-02-05
申请号：PCT/US9709367
申请日：1997-05-28
申请人： AXON TECHNOLOGIES CORP , UNIV ARIZONA
发明人： KOZICKI MICHAEL N , WEST WILLIAM C
IPC分类号： G02F1/19 , G02F1/15 , G02F1/155 , G06F12/00 , G11C13/00 , G11C13/02 , H01B1/06 , H01B1/10 , H01L21/82 , H01L21/822 , H01L27/04 , H01L27/10 , H01L27/105 , H01L45/00 , G06F
CPC分类号： G11C13/0011 , G02F1/1525 , G02F1/155 , G11C13/0069 , G11C2013/009 , G11C2213/51 , H01L45/085 , H01L45/1206 , H01L45/1213 , H01L45/1226 , H01L45/1233 , H01L45/142
摘要： A programmable metallization cell (10) ('PMC') comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (13 and 14) (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor (12) and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC. The PMC may be incorporated into a variety of technologies such as memory devices, programmable resistor/capacitor devices, optical devices, sensors, and the like. Electrodes additional to the cathode and anode can be provided to serve as outputs or additional outputs of the devices in sensing electrical characteristics which are dependent upon the extent of the dendrite.

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