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1. 发明申请

WO2018186940A1 RESISTIVE MEMORY DEVICE INCLUDING A LATERAL AIR GAP AROUND A MEMORY ELEMENT AND METHOD OF MAKING THEREOF 审中-公开
公开(公告)号：WO2018186940A1
公开(公告)日：2018-10-11
申请号：PCT/US2018/018988
申请日：2018-02-21
申请人： SANDISK TECHNOLOGIES LLC
发明人： NARDI, Federico , FU, Chu-Chen
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1253 , H01L45/1293 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1608 , H01L45/1675
摘要： First electrically conductive lines (134) are formed over a substrate (10). A two-dimensional array of vertical stacks (180) is formed, each of which includes a first electrode (212), an in-process resistive memory material portion (214), and a second electrode (216) over the first electrically conductive line. The sidewalls of the in-process resistive memory material portions are laterally recessed with respect to sidewalls of the first electrode and the second electrode to form resistive memory material portions having reduced lateral dimensions. A dielectric material layer (288) is formed by an anisotropic deposition to form annular cavities (215) that laterally surround a respective one of the resistive memory material portions. Second electrically conductive lines (194) are formed on the second electrodes.

2. 发明申请

WO2018033707A1 FABRICATION OF CORRELATED ELECTRON MATERIAL FILM VIA EXPOSURE TO ULTRAVIOLET ENERGY 审中-公开
标题翻译：通过暴露于紫外线能量的相关电子材料膜的制造
公开(公告)号：WO2018033707A1
公开(公告)日：2018-02-22
申请号：PCT/GB2017/052367
申请日：2017-08-10
申请人： ARM LTD
发明人： REID, Kimberly Gay , SHIFREN, Lucian
IPC分类号： H01L45/00 , C23C16/48
CPC分类号： H01L45/1608 , C23C16/406 , C23C16/45527 , C23C16/45536 , C23C16/482 , C23C16/56 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, in which an ultraviolet light source is utilized during fabrication of a correlated electron material. In embodiments, use of ultraviolet light may decrease a likelihood of diffusion of atomic and/or molecular components of a substrate that may bring about undesirable electrical performance of a CEM device.
摘要翻译：本文公开的主题可涉及例如用于执行切换功能的相关电子材料的制造。在实施例中，描述了在制造相关电子材料期间利用紫外光源的过程。在实施例中，使用紫外光可降低衬底的原子和/或分子组分扩散的可能性，这可能导致CEM装置的不合需要的电性能。

3. 发明申请

WO2017142790A1 IMPLEMENTATION OF VMCO AREA SWITCHING CELL TO VBL ARCHITECTURE 审中-公开
标题翻译： VMCO区切换单元到VBL体系结构的实现
公开(公告)号：WO2017142790A1
公开(公告)日：2017-08-24
申请号：PCT/US2017/017235
申请日：2017-02-09
申请人： SANDISK TECHNOLOGIES LLC
发明人： TANAKA, Yoichiro , CHEN, Yangyin , FU, Chu-Chen , PETTI, Christopher
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/249 , G11C13/0007 , G11C13/0011 , G11C13/0026 , G11C13/0028 , G11C13/0038 , G11C13/004 , G11C13/0069 , G11C2213/32 , G11C2213/51 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L23/528 , H01L23/53257 , H01L27/1214 , H01L27/2427 , H01L27/2481 , H01L29/78642 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/146 , H01L45/1608 , H01L45/1683
摘要： Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.
摘要翻译：描述了用于提高利用空位调制导电氧化物（VMCO）结构的非易失性存储器的性能的系统和方法。 VMCO结构可以包括非晶硅层（例如Si阻挡层）和层钛氧化物层（例如TiO 2转换层）。在某些情况下，VMCO结构或VMCO堆栈可以在VMCO结构的一个区域上使用批量切换或切换O离子运动，而不是局部切换形成丝状通路的空位缩窄。 VMCO结构可以部分或完全嵌入在存储器阵列的字线层中。

4. 发明申请

WO2017140647A1 SOLID ELECTROLYTE FOR RERAM 审中-公开
标题翻译：用于RERAM的固体电解质
公开(公告)号：WO2017140647A1
公开(公告)日：2017-08-24
申请号：PCT/EP2017/053218
申请日：2017-02-14
申请人： HERAEUS DEUTSCHLAND GMBH & CO. KG
发明人： NEUMANN, Christian
IPC分类号： H01L45/00 , C03C3/083 , C23C14/34
CPC分类号： H01L45/145 , C03C3/06 , C03C3/083 , C03C23/0095 , C23C14/3414 , H01L45/085 , H01L45/1608
摘要： The disclosed composition, particularly suitable for resistance switching memories based on metal ion transport, comprises a matrix material of a metal oxide/sulphide/selenide of at least two metals M1 and M2, and a metal M3 which is mobile in the matrix, wherein - the atomic ratio of M1 to M2 is within the range of 75:25 to 99.99:0.01; - the valence states of M1, M2 and M3 are all positive; - the valence state of M1 is larger than the valence state of M2; and - the valence state of M2 is equal to or larger than the valence state of M3. Most preferred is amorphous silicon dioxide with M2=AI partially replacing M1=Si atoms, containing M3=Cu. Fabrication and use of said composition, e.g. as sputtering target, are also disclosed.
摘要翻译：所公开的组合物特别适用于基于金属离子传输的电阻切换存储器，其包含至少两种金属M1和M2的金属氧化物/硫化物/硒化物的基体材料和金属M3 在基质中是可移动的，其中--M1与M2的原子比在75:25至99.99:0.01的范围内; - M1，M2和M3的价态均为正值; --M1的价态大于M2的价态; 并且--M2的价态等于或大于M3的价态。最优选的是M2 = Al部分取代M1 = Si原子，含有M3 = Cu的无定形二氧化硅。所述组合物的制造和使用，例如作为溅射靶，也被公开。

5. 发明申请

WO2017115340A1 MEMRISTOR BASED SENSOR FOR RADIATION DETECTION 审中-公开
标题翻译：基于MEMRISTOR的传感器进行辐射检测
公开(公告)号：WO2017115340A1
公开(公告)日：2017-07-06
申请号：PCT/IB2016/058126
申请日：2016-12-30
申请人： KHALIFA UNIVERSITY OF SCIENCE, TECHNOLOGY & RESEARCH
发明人： MOHAMMAD, Baker , JAOUDE, Maguy Abi , NAHLA, Heba Abu , AL-QUTAYRI, Mahmoud , OKELLY, Curtis
IPC分类号： G01T1/17 , H01L27/14 , H01L47/00 , G01T3/00
CPC分类号： G01T1/17 , G01T1/02 , G01T1/245 , G01T3/00 , H01L27/14 , H01L45/1213 , H01L45/146 , H01L45/1608
摘要： Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 µm thick layer of TiO 2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.
摘要翻译：使用一个或多个忆阻器作为辐射传感器的装置，系统和方法被启用。由于其被动低功耗特性，忆阻器作为传感器很有吸引力。医疗和环境监测是预期的用例。作为安全系统的一部分（例如在机场）检测辐射并筛选食物以进行辐射照射也是可能的用途。忆阻器作为辐射传感器可能为个人热释光剂量计（TLD）提供廉价且简单的替代方案。具有高电流和低功率操作的忆阻器器件可以连接可穿戴塑料基板。示例装置包括具有50微米厚的TiO 2忆阻器材料的两个金属条。相对于传统的纳米级忆阻器而言，该器件可能较大，但其厚度增加会显着增加辐射与忆阻器材料相互作用的可能性。

6. 发明申请

WO2017074548A1 RESISTIVE RANDOM ACCESS MEMORY CONTAINING A STEERING ELEMENT AND A TUNNELING DIELECTRIC ELEMENT 审中-公开
标题翻译：包含转向元件和隧道介电元件的电阻式随机存取存储器
公开(公告)号：WO2017074548A1
公开(公告)日：2017-05-04
申请号：PCT/US2016/049259
申请日：2016-08-29
申请人： SANDISK TECHNOLOGIES LLC
发明人： BANDYOPADHYAY, Abhijit , NAGAVARAPU, Venkatagirish , LI, Xiao , LAN, Zhida , KONEVECKI, Michael
IPC分类号： H01L45/00 , H01L27/24 , H01L23/00
CPC分类号： H01L27/2409 , H01L27/2454 , H01L27/249 , H01L45/08 , H01L45/12 , H01L45/1226 , H01L45/146 , H01L45/1608 , H01L45/1666
摘要： A memory device includes at least one memory cell. The at least one memory cell includes a steering element, a resistive memory element, and a tunneling dielectric element located between the steering element and the resistive memory element.
摘要翻译：存储器件包括至少一个存储器单元。该至少一个存储器单元包括位于转向元件与电阻式存储器元件之间的转向元件，电阻式存储器元件和隧穿介电元件。

7. 发明申请

WO2017034741A1 RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE ELEMENT AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：具有电阻存储元件的电阻随机存取存储器件及其制造方法
公开(公告)号：WO2017034741A1
公开(公告)日：2017-03-02
申请号：PCT/US2016/044258
申请日：2016-07-27
申请人： QUALCOMM INCORPORATED
发明人： LU, Yu , LI, Xia , KANG, Seung Hyuk
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2463 , H01L27/2436 , H01L45/04 , H01L45/08 , H01L45/1226 , H01L45/1246 , H01L45/1253 , H01L45/146 , H01L45/1608 , H01L45/1683
摘要： A method of fabrication of a device includes forming a first electrode (158) and a second electrode (162). The method further includes forming a resistive material (160) between the first electrode and the second electrode to form a resistance-based storage element (104) of a resistive random access memory (RRAM) device.
摘要翻译：一种制造器件的方法包括形成第一电极（158）和第二电极（162）。该方法还包括在第一电极和第二电极之间形成电阻材料（160），以形成电阻随机存取存储器（RRAM）装置的基于电阻的存储元件（104）。

8. 发明申请

WO2016140715A1 PARALLEL BIT LINE THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY 审中-公开
标题翻译：并行线三维电阻随机存取存储器
公开(公告)号：WO2016140715A1
公开(公告)日：2016-09-09
申请号：PCT/US2015/062780
申请日：2015-11-25
申请人： SANDISK TECHNOLOGIES LLC
发明人： TAKAKI, Seje
IPC分类号： H01L27/24
CPC分类号： H01L27/249 , G11C13/0007 , G11C13/0069 , G11C13/0097 , H01L27/2454 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608
摘要： The proposed three-dimensional resistive random access memory (ReRAM) array includes multiple line stack structures laterally spaced apart along a first horizontal direction and extend along a different second horizontal direction. Each line stack structure comprises an alternating plurality of word lines (30) and bit lines (38). An intervening line stack including a memory material line structure (32), an intrinsic semiconductor material line structure (34), and a doped semiconductor material line structure (36) is located between each vertically neighboring pair of a word line and a bit line. A two- dimensional array of vertical selector lines (54), separated from the line stacks by a gate dielectric (52), functions as gate electrodes, each gate electrode activating a semiconductor channel between a word line and a bit line.
摘要翻译：所提出的三维电阻随机存取存储器（ReRAM）阵列包括沿着第一水平方向横向间隔开并沿着不同的第二水平方向延伸的多个线堆栈结构。每个线堆叠结构包括交替的多个字线（30）和位线（38）。包括存储材料线结构（32），本征半导体材料线结构（34）和掺杂半导体材料线结构（36）的插入线堆叠位于每个垂直相邻的一对字线和位线之间。由栅极电介质（52）与线堆叠分开的垂直选择线（54）的二维阵列用作栅电极，每个栅电极激活字线和位线之间的半导体沟道。

9. 发明申请

WO2016122473A1 ELECTROSTATIC DISCHARGE MEMRISTIVE ELEMENT SWITCHING 审中-公开
标题翻译：静电放电元件开关
公开(公告)号：WO2016122473A1
公开(公告)日：2016-08-04
申请号：PCT/US2015/013222
申请日：2015-01-28
申请人： HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
发明人： BUCHANAN, Brent , AULETTA, Richard J, , GE, Ning
IPC分类号： H01L27/02
CPC分类号： H02H9/046 , G11C13/004 , G11C13/0097 , G11C2029/5002 , H01L21/823475 , H01L27/0266 , H01L27/0288 , H01L27/092 , H01L45/1608
摘要： In the examples provided herein, an electrostatic discharge (ESD) recording circuit has a first memristive element coupled to a pin of an integrated circuit. The first memristive element switches from a first resistance to a second resistance when an ESD event occurs at the pin, and the first resistance is less than the second resistance. The ESD recording circuit also has shunting circuitry to shunt energy from an additional ESD event away from the first memristive element.
摘要翻译：在本文提供的示例中，静电放电（ESD）记录电路具有耦合到集成电路的引脚的第一忆阻元件。当在引脚处发生ESD事件时，第一忆阻元件从第一电阻切换到第二电阻，并且第一电阻小于第二电阻。 ESD记录电路还具有分流电路，以从远离第一忆阻元件的附加ESD事件中分流能量。

10. 发明申请

WO2016101247A1 三端原子开关器件及其制备方法审中-公开
公开(公告)号：WO2016101247A1
公开(公告)日：2016-06-30
申请号：PCT/CN2014/095081
申请日：2014-12-26
申请人：中国科学院微电子研究所
发明人：吕杭炳 , 刘明 , 刘琦 , 龙世兵
IPC分类号： H01L45/00
CPC分类号： H01L45/1206 , H01L27/2481 , H01L45/00 , H01L45/124 , H01L45/141 , H01L45/147 , H01L45/1608 , H01L45/1675 , H01L45/1683
摘要：公开了一种三端原子开关器件及其制备方法。三端原子开关器件包括：包含有源端(301)和漏端(302)的堆叠结构；刻蚀堆叠结构而形成的垂直沟槽；在垂直沟槽内壁及底部形成的M 8 XY 6 沟道层(501)；以及在M 8 XY 6 沟道层(501)表面形成的控制端(601)，且控制端(601)充满垂直沟槽，其中源端电阻和漏端电阻受控制端调控。基于三端原子开关器件，依靠源漏间电阻随控制端电压的高度非线性变化特征实现高开关比特性，结构简单、易集成、密度高、成本低，可用于交叉阵列结构中的选通管，抑制由漏电流引起的串扰现象；三端原子开关器件同时适用于平面堆叠交叉阵列结构以及垂直交叉阵列结构，实现高密度的三维存储。

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