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    • 1. 发明申请
    • MEMS VARACTORS
    • MEMS变阻器
    • WO2010138929A1
    • 2010-12-02
    • PCT/US2010/036746
    • 2010-05-28
    • QUALCOMM INCORPORATEDLAN, Je-HsiungGOUSEV, Evgeni P.ZHANG, WenyueKOTHARI, ManishPARK, Sang-June
    • LAN, Je-HsiungGOUSEV, Evgeni P.ZHANG, WenyueKOTHARI, ManishPARK, Sang-June
    • H01P1/12
    • H01G7/00H01G5/16H01P1/127Y10T29/435
    • MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals.
    • 描述能够处理大信号和/或实现高电容调谐范围的MEMS变容二极管。 在示例性设计中,MEMS变容二极管包括(i)电耦合到接收输入信号的第一端子的第一底板,(ii)电耦合到接收DC电压的第二端子的第二底板,以及(iii) 顶板形成在第一和第二底板上并电耦合到第三端子。 直流电压使顶板机械地移动并改变由输入信号观察到的电容。 在另一示例性设计中,MEMS变容二极管包括彼此形成并分别电耦合到第一,第二和第三端子的第一,第二和第三板。 第一和第二直流电压可以分别施加到第一和第三端子。 输入信号可以在第一和第二端子之间通过。
    • 6. 发明申请
    • METHOD OF FABRICATION AND RESULTANT ENCAPSULATED ELECTROMECHANICAL DEVICE
    • 制造方法和结果封装的电化学装置
    • WO2012087942A2
    • 2012-06-28
    • PCT/US2011/065864
    • 2011-12-19
    • QUALCOMM MEMS TECHNOLOGIES, INC.HE, RihuiYAN, XiaomingLAN, Je-Hsiung
    • HE, RihuiYAN, XiaomingLAN, Je-Hsiung
    • B81C1/00
    • B81C1/00333B81C2203/0136B81C2203/0145
    • This disclosure provides systems, methods, and apparatus for encapsulated electromechanical systems. In one aspect, a release path includes a release hole through an encapsulation layer. The release path exposes a portion of a first sacrificial layer that extends beyond a second sacrificial layer in a horizontal direction. This allows the first sacrificial layer and the second sacrificial layer to later be etched through the release path. The corresponding electromechanical system device includes a shell layer encapsulating a mechanical layer. A conformal layer seals a release hole that extends through a shell layer. A portion of the conformal layer blocks the opening of the release passage within the release hole. The release passage has substantially the same vertical height as a gap that defines the spacing between the mechanical layer and a substrate.
    • 本公开提供了用于封装的机电系统的系统,方法和装置。 一方面,释放路径包括通过封装层的释放孔。 释放路径暴露在水平方向上延伸超过第二牺牲层的第一牺牲层的一部分。 这允许第一牺牲层和第二牺牲层随后通过释放路径被蚀刻。 相应的机电系统装置包括封装机械层的外壳层。 保形层密封延伸穿过壳层的释放孔。 共形层的一部分阻挡释放孔内的释放通道的开口。 释放通道具有与限定机械层和基底之间的间隔的间隙大致相同的垂直高度。