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    • 1. 发明申请
    • MEMS VARACTORS
    • MEMS变阻器
    • WO2010138929A1
    • 2010-12-02
    • PCT/US2010/036746
    • 2010-05-28
    • QUALCOMM INCORPORATEDLAN, Je-HsiungGOUSEV, Evgeni P.ZHANG, WenyueKOTHARI, ManishPARK, Sang-June
    • LAN, Je-HsiungGOUSEV, Evgeni P.ZHANG, WenyueKOTHARI, ManishPARK, Sang-June
    • H01P1/12
    • H01G7/00H01G5/16H01P1/127Y10T29/435
    • MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals.
    • 描述能够处理大信号和/或实现高电容调谐范围的MEMS变容二极管。 在示例性设计中,MEMS变容二极管包括(i)电耦合到接收输入信号的第一端子的第一底板,(ii)电耦合到接收DC电压的第二端子的第二底板,以及(iii) 顶板形成在第一和第二底板上并电耦合到第三端子。 直流电压使顶板机械地移动并改变由输入信号观察到的电容。 在另一示例性设计中,MEMS变容二极管包括彼此形成并分别电耦合到第一,第二和第三端子的第一,第二和第三板。 第一和第二直流电压可以分别施加到第一和第三端子。 输入信号可以在第一和第二端子之间通过。