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    • 2. 发明申请
    • APPARATUS AND METHOD FOR REPAIRING A SEMICONDUCTOR MEMORY
    • 修复半导体存储器的装置和方法
    • WO2007005218B1
    • 2007-04-26
    • PCT/US2006023219
    • 2006-06-14
    • MICRON TECHNOLOGY INCMARTIN CHRIS GMANNING TROY AKEETH BRENT
    • MARTIN CHRIS GMANNING TROY AKEETH BRENT
    • G11C29/00
    • G11C17/165G11C29/4401G11C29/789G11C29/802G11C29/808G11C2029/4402
    • An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.
    • 一种用于修复半导体存储器件的装置和方法包括第一存储器单元阵列,第一冗余单元阵列和修复电路,该修复电路被配置为非易失性地将指定至少一个故障存储器单元的第一地址存储在第一存储器单元阵列中。 第一易失性高速缓存存储对应于指定至少一个有缺陷的存储单元的第一地址的第一高速缓存地址。 修复电路将指定第一存储单元阵列的至少一个故障存储单元的第一地址分配给第一易失性缓存。 当第一存储器访问对应于第一高速缓存地址时,匹配电路将来自第一冗余单元阵列的至少一个冗余存储器单元替换为第一存储器单元阵列中的至少一个有缺陷存储器单元。
    • 3. 发明申请
    • MEMORY SYSTEM AND METHOD FOR STROBING DATA, COMMAND AND ADDRESS SIGNALS
    • 用于阻止数据,命令和地址信号的记忆系统和方法
    • WO2006026526A2
    • 2006-03-09
    • PCT/US2005/030593
    • 2005-08-26
    • MICRON TECHNOLOGY, INC.LIN, FengKEETH, BrentJOHNSON, BrianLEE, Seong-hoon
    • LIN, FengKEETH, BrentJOHNSON, BrianLEE, Seong-hoon
    • G11C7/00
    • G11C7/109G11C7/1006G11C7/1078G11C7/1087G11C7/22G11C7/222
    • A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.
    • 存储器系统将命令,地址或写入数据信号从存储器控制器耦合到存储器件,并将数据信号从存储器件读取到存储器控制器。 每个存储器控制器和存储器件中的相应选通发生器电路都产生同相选通信号和正交选通信号。 存储在存储器控制器中的相应输出锁存器中的命令,地址或写数据信号由来自内部选通发生器电路的同相信号计时。 这些命令,地址或写入数据信号通过从存储器控制器耦合到存储器件的正交选通信号而被锁存在存储器件中的输入锁存器中。 以基本上相同的方式,使用由内部选通发生器电路产生的同相和正交选通信号,将读数据信号从存储器件耦合到存储器控制器。
    • 7. 发明申请
    • APPARATUS AND METHOD FOR REPAIRING A SEMICONDUCTOR MEMORY
    • 用于修复半导体存储器的装置和方法
    • WO2007005218A1
    • 2007-01-11
    • PCT/US2006/023219
    • 2006-06-14
    • MICRON TECHNOLOGY, INC.MARTIN, Chris, G.MANNING, Troy, A.KEETH, Brent
    • MARTIN, Chris, G.MANNING, Troy, A.KEETH, Brent
    • G11C29/00
    • G11C17/165G11C29/4401G11C29/789G11C29/802G11C29/808G11C2029/4402
    • An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.
    • 用于修复半导体存储器件的装置和方法包括:第一存储单元阵列,第一冗余单元阵列和修复电路,被配置为在第一存储单元阵列中非易失性地存储指定至少一个有缺陷的存储单元的第一地址。 第一易失性高速缓存存储对应于指定所述至少一个有缺陷的存储器单元的第一地址的第一高速缓存地址。 修复电路将指定第一存储单元阵列的至少一个缺陷存储单元的第一地址分配给第一易失性高速缓存。 当第一存储器访问对应于第一高速缓存地址时,匹配电路将来自第一冗余单元阵列的至少一个冗余存储单元替换为第一存储单元阵列中的至少一个有缺陷的存储单元。