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1. 发明申请

WO2009051716A3 RECONFIGURABLE CONNECTIONS FOR STACKED SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：WO2009051716A3
公开(公告)日：2009-04-23
申请号：PCT/US2008/011753
申请日：2008-10-15
申请人： MICRON TECHNOLOGY, INC. , KEETH, Brent
发明人： KEETH, Brent
IPC分类号： H01L21/66
摘要： Some embodiments include apparatus, systems, and methods comprising semiconductor dice arranged in a stack, a number of connections configured to provide communication among the dice, at least a portion of the connections going through at least one of the dice, and a module configured to check for defects in the connections and to repair defects the connections.

2. 发明申请

WO2010030799A1 STACKED DEVICE IDENTIFICATION ASSIGNMENT 审中-公开
标题翻译：堆叠设备标识分配
公开(公告)号：WO2010030799A1
公开(公告)日：2010-03-18
申请号：PCT/US2009/056538
申请日：2009-09-10
申请人： MICRON TECHNOLOGY, INC. , KEETH, Brent
发明人： KEETH, Brent
IPC分类号： H01L23/12 , H01L23/48
CPC分类号： G11C5/02 , G11C5/06 , G11C7/10 , G11C7/20 , G11C2207/2227 , H01L23/12 , H01L23/48 , H01L2224/05001 , H01L2224/05009 , H01L2224/0557 , H01L2224/05571 , H01L2224/16145 , H01L2924/00014 , H01L2224/05599 , H01L2224/05099
摘要： Some embodiments include apparatus and methods having dice arranged in a stack. The dice include at least a first die and a second die, and a connection coupled to the dice. The connection may be configured to transfer control information to the first die during an assignment of a first identification to the first die and to transfer the control information from the first die to the second die during an assignment of a second identification to the second die.
摘要翻译：一些实施例包括具有布置在堆叠中的骰子的装置和方法。骰子至少包括第一管芯和第二管芯，以及连接到管芯的连接。连接可以被配置为在将第一标识分配给第一管芯期间将控制信息传送到第一管芯，并且在将第二标识分配给第二管芯期间将控制信息从第一管芯传送到第二管芯。

3. 发明申请

WO2006118788A2 SYSTEM AND METHOD FOR DECODING COMMANDS BASED ON COMMAND SIGNALS AND OPERATING STATE 审中-公开
标题翻译：基于命令信号和操作状态解码命令的系统和方法
公开(公告)号：WO2006118788A2
公开(公告)日：2006-11-09
申请号：PCT/US2006/014650
申请日：2006-04-17
申请人： MICRON TECHNOLOGY, INC. , JANZEN, Jeffrey, W. , KEETH, Brent , WRIGHT, Jeffrey, P. , CULLUM, James, S.
发明人： JANZEN, Jeffrey, W. , KEETH, Brent , WRIGHT, Jeffrey, P. , CULLUM, James, S.
IPC分类号： G06F13/00
CPC分类号： G11C11/4096 , G11C7/1072 , G11C11/40611 , G11C11/4076 , G11C11/4087 , G11C11/4091
摘要： A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.
摘要翻译：一种用于对命令信号进行解码的系统和方法，该系统和方法包括一个命令解码器，该命令解码器经配置以产生内部控制信号，以根据命令信号和操作状态进行操作。命令信号的相同组合可以根据操作状态请求不同的命令。当存储器系统处于第一操作状态时，根据命令信号从第一组操作中选择命令，并且当存储器系统处于第二操作时根据命令信号从第二组操作中选择命令州。

4. 发明申请

WO2006026526A2 MEMORY SYSTEM AND METHOD FOR STROBING DATA, COMMAND AND ADDRESS SIGNALS 审中-公开
标题翻译：用于阻止数据，命令和地址信号的记忆系统和方法
公开(公告)号：WO2006026526A2
公开(公告)日：2006-03-09
申请号：PCT/US2005/030593
申请日：2005-08-26
申请人： MICRON TECHNOLOGY, INC. , LIN, Feng , KEETH, Brent , JOHNSON, Brian , LEE, Seong-hoon
发明人： LIN, Feng , KEETH, Brent , JOHNSON, Brian , LEE, Seong-hoon
IPC分类号： G11C7/00
CPC分类号： G11C7/109 , G11C7/1006 , G11C7/1078 , G11C7/1087 , G11C7/22 , G11C7/222
摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.
摘要翻译：存储器系统将命令，地址或写入数据信号从存储器控制器耦合到存储器件，并将数据信号从存储器件读取到存储器控制器。每个存储器控制器和存储器件中的相应选通发生器电路都产生同相选通信号和正交选通信号。存储在存储器控制器中的相应输出锁存器中的命令，地址或写数据信号由来自内部选通发生器电路的同相信号计时。这些命令，地址或写入数据信号通过从存储器控制器耦合到存储器件的正交选通信号而被锁存在存储器件中的输入锁存器中。以基本上相同的方式，使用由内部选通发生器电路产生的同相和正交选通信号，将读数据信号从存储器件耦合到存储器控制器。

5. 发明申请

WO2011126893A2 APPARATUSES ENABLING CONCURRENT COMMUNICATION BETWEEN AN INTERFACE DIE AND A PLURALITY OF DICE STACKS, INTERLEAVED CONDUCTIVE PATHS IN STACKED DEVICES, AND METHODS FOR FORMING AND OPERATING THE SAME 审中-公开
标题翻译：实现了接口模块与多层堆叠式堆叠设备之间的交互式通信的装置及其形成和操作的方法
公开(公告)号：WO2011126893A2
公开(公告)日：2011-10-13
申请号：PCT/US2011/030544
申请日：2011-03-30
申请人： MICRON TECHNOLOGY, INC. , KEETH, Brent , MORZANO, Christopher K.
发明人： KEETH, Brent , MORZANO, Christopher K.
CPC分类号： H01L25/0652 , G06F13/385 , G11C5/02 , H01L23/3128 , H01L23/481 , H01L25/0657 , H01L25/18 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555
摘要： Various embodiments include apparatuses, stacked devices and methods of forming dice stacks on an interface die. In one such apparatus, a dice stack includes at least a first die and a second die, and conductive paths coupling the first die and the second die to the common control die. In some embodiments, the conductive paths may be arranged to connect with circuitry on alternating dice of the stack. In other embodiments, a plurality of dice stacks may be arranged on a single interface die, and some or all of the dice may have interleaving conductive paths.
摘要翻译：各种实施例包括在接口管芯上形成骰子堆叠的装置，堆叠装置和方法。在一种这样的装置中，骰子堆叠包括至少第一模具和第二模具，以及将第一模具和第二模具耦合到公共控制模具的导电路径。在一些实施例中，导电路径可以布置成与堆叠的交替管芯上的电路连接。在其他实施例中，多个骰子堆可以被布置在单个接口管芯上，并且骰子的一些或全部可以具有交错导电路径。

6. 发明申请

WO2007005218A1 APPARATUS AND METHOD FOR REPAIRING A SEMICONDUCTOR MEMORY 审中-公开
标题翻译：用于修复半导体存储器的装置和方法
公开(公告)号：WO2007005218A1
公开(公告)日：2007-01-11
申请号：PCT/US2006/023219
申请日：2006-06-14
申请人： MICRON TECHNOLOGY, INC. , MARTIN, Chris, G. , MANNING, Troy, A. , KEETH, Brent
发明人： MARTIN, Chris, G. , MANNING, Troy, A. , KEETH, Brent
IPC分类号： G11C29/00
CPC分类号： G11C17/165 , G11C29/4401 , G11C29/789 , G11C29/802 , G11C29/808 , G11C2029/4402
摘要： An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.
摘要翻译：用于修复半导体存储器件的装置和方法包括：第一存储单元阵列，第一冗余单元阵列和修复电路，被配置为在第一存储单元阵列中非易失性地存储指定至少一个有缺陷的存储单元的第一地址。第一易失性高速缓存存储对应于指定所述至少一个有缺陷的存储器单元的第一地址的第一高速缓存地址。修复电路将指定第一存储单元阵列的至少一个缺陷存储单元的第一地址分配给第一易失性高速缓存。当第一存储器访问对应于第一高速缓存地址时，匹配电路将来自第一冗余单元阵列的至少一个冗余存储单元替换为第一存储单元阵列中的至少一个有缺陷的存储单元。

7. 发明申请

WO2010042496A2 STACKED DEVICE REMAPPING AND REPAIR 审中-公开
标题翻译：堆叠设备重新包装和维修
公开(公告)号：WO2010042496A2
公开(公告)日：2010-04-15
申请号：PCT/US2009/059669
申请日：2009-10-06
申请人： MICRON TECHNOLOGY, INC. , KEETH, Brent , MARTIN, Chris G. , MANNING, Troy A. , JEDDELOH, Joe M. , COWLES, Timothy B. , REHMEYER, Jim , LABERGE, Paul A.
发明人： KEETH, Brent , MARTIN, Chris G. , MANNING, Troy A. , JEDDELOH, Joe M. , COWLES, Timothy B. , REHMEYER, Jim , LABERGE, Paul A.
IPC分类号： G11C8/04 , G11C8/06
CPC分类号： G06F12/08 , G06F12/10 , G11C5/025 , G11C29/04 , G11C29/18 , G11C29/76 , G11C29/78 , G11C29/808 , G11C29/812 , G11C29/883 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2924/00014 , H01L2924/15311 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die.
摘要翻译：各种实施例包括具有以堆叠方式布置的多个管芯的设备，系统和方法，其中有缺陷的单元可以被同一管芯或不同管芯上的备用单元替换。

8. 发明申请

WO2010030804A1 SIGNAL DELIVERY IN STACKED DEVICE 审中-公开
标题翻译：堆叠设备中的信号传递
公开(公告)号：WO2010030804A1
公开(公告)日：2010-03-18
申请号：PCT/US2009/056544
申请日：2009-09-10
申请人： MICRON TECHNOLOGY, INC. , KEETH, Brent , HIATT, Mark , LEE, Terry R. , TUTTLE, Mark , ADVANI, Rahul , SCHRECK, John F.
发明人： KEETH, Brent , HIATT, Mark , LEE, Terry R. , TUTTLE, Mark , ADVANI, Rahul , SCHRECK, John F.
IPC分类号： H01L23/12 , H01L23/48 , H01L21/60
CPC分类号： H01L25/0657 , H01L23/50 , H01L23/5385 , H01L23/66 , H01L25/0655 , H01L2223/6677 , H01L2224/0401 , H01L2224/06181 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/17181 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06541 , H01L2225/06572 , H01L2924/01004 , H01L2924/15311 , Y10T29/49165
摘要： Some embodiments include apparatus, systems, and methods having a base, a first die, a second arranged in a stacked with the first die and the base, and a structure located in the stack and outside at least one of the first and second dice and configured to transfer signals between the base and at least one of the first and second dice.
摘要翻译：一些实施例包括装置，系统和方法，其具有底座，第一管芯，第二管芯，第二管芯和第二管芯，第二管芯和第二管芯，第二管芯和第二管芯，被配置为在所述基座与所述第一和第二骰子中的至少一个之间传送信号。

9. 发明申请

WO2004001846A2 METHOD AND STRUCTURES FOR REDUCED PARASITIC CAPACITANCE IN INTEGRATED CIRCUIT METALLIZATIONS 审中-公开
标题翻译：集成电路金属化中降低PARASIIC电容的方法与结构
公开(公告)号：WO2004001846A2
公开(公告)日：2003-12-31
申请号：PCT/US2003/021029
申请日：2003-06-18
申请人： MICRON TECHNOLOGY, INC. , BATRA, Shubneesh , CHAINE, Michael, D. , KEETH, Brent , AKRAM, Salman , MANNING, Troy, A. , JOHNSON, Brian , MARTIN, Chris, G. , MERRITT, Todd, A. , SMITH, Eric, J.
发明人： BATRA, Shubneesh , CHAINE, Michael, D. , KEETH, Brent , AKRAM, Salman , MANNING, Troy, A. , JOHNSON, Brian , MARTIN, Chris, G. , MERRITT, Todd, A. , SMITH, Eric, J.
IPC分类号： H01L23/485
CPC分类号： H01L24/05 , H01L23/5222 , H01L24/03 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01061 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105
摘要： A method of reducing parasitic capacitance in an integrated circuit having three or more metal levels (M1, M2, M3, etc) is described. The method comprises forming a bond pad (20) at least partially exposed at the top surface of the integrated circuit, forming a metal pad (22) on the metal level (42) below the bond pad (20) and forming an underlying metal pad (26b) on each of the one or more lower metal levels. In the illustrated embodiments, the ratio of an area of at least one of the underlying metal pads (22, 26b) to the area of the bond pad (20) is less than 30%. Parasitic capacitance is thus greatly reduced and signal propagation speeds improved.
摘要翻译：描述了一种降低具有三个或更多个金属水平（M1，M2，M3等）的集成电路中的寄生电容的方法。该方法包括形成至少部分地暴露在集成电路的顶表面处的接合焊盘（20），在接合焊盘（20）下方的金属层（42）上形成金属焊盘（22），并形成下面的金属焊盘（26b）在所述一个或多个下层金属层中的每一个上。在所示实施例中，下面的金属焊盘（22,26b）中的至少一个的面积与焊盘（20）的面积之比小于30％。寄生电容因此大大降低，信号传播速度提高。

10. 发明申请

WO2020180464A1 PROTECTED REGIONS MANAGEMENT OF MEMORY 审中-公开
公开(公告)号：WO2020180464A1
公开(公告)日：2020-09-10
申请号：PCT/US2020/017578
申请日：2020-02-11
申请人： MICRON TECHNOLOGY, INC.
发明人： KEETH, Brent , MALIHI, Naveh
IPC分类号： G06F9/455 , G06F12/14 , G06F21/60
摘要： Apparatuses and methods related to managing regions of memory are described. Managing regions can include verifying whether an access command is authorized to access a particular region of a memory array, which may have some regions that have rules or restrictions governing access (e.g., so-called "protected regions"). The authorization can be verified utilizing a key and a memory address corresponding to the access command. If an access command is authorized to access a region, then a row of the memory array corresponding to the access command can be activated. If an access command is not authorized to access the region, then a row of the memory array corresponding to the access command may not be activated.

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