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1. 发明申请

US20130078570A1 METHOD OF FORMING PATTERN AND LAMINATE 有权
公开(公告)号：US20130078570A1
公开(公告)日：2013-03-28
申请号：US13626415
申请日：2012-09-25
申请人： Atsushi HIENO , Shigeki HATTORI , Hiroko NAKAMURA , Satoshi MIKOSHIBA , Koji ASAKAWA , Masahiro KANNO , Yuriko SEINO , Tsukasa AZUMA
发明人： Atsushi HIENO , Shigeki HATTORI , Hiroko NAKAMURA , Satoshi MIKOSHIBA , Koji ASAKAWA , Masahiro KANNO , Yuriko SEINO , Tsukasa AZUMA
IPC分类号： G03F7/20 , G03F7/004 , B32B7/04 , B82Y30/00
CPC分类号： G03F7/40 , B32B7/04 , B32B2307/40 , B82Y30/00 , G03F7/0002 , G03F7/004 , G03F7/0751 , G03F7/0752 , G03F7/11 , G03F7/165 , G03F7/20
摘要： According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

2. 发明授权

US07972932B2 Mark forming method and method for manufacturing semiconductor device 有权
标题翻译：用于制造半导体器件的标记形成方法和方法
公开(公告)号：US07972932B2
公开(公告)日：2011-07-05
申请号：US12407814
申请日：2009-03-20
申请人： Takashi Sato , Hiroko Nakamura , Masaru Suzuki , Ryoichi Inanami
发明人： Takashi Sato , Hiroko Nakamura , Masaru Suzuki , Ryoichi Inanami
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , G03F7/70633 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2924/0002 , H01L2924/00
摘要： A mark forming method includes forming a first mask layer on a semiconductor substrate; forming at least three first patterns having periodicity on the first mask layer; forming a second mask layer on the first mask layer having the first patterns formed thereon; and forming an opening in the second mask layer to cover at least two patterns on ends of the at least three first patterns, thereby forming a mark composed of exposed ones of the first patterns.
摘要翻译：标记形成方法包括在半导体衬底上形成第一掩模层; 在所述第一掩模层上形成具有周期性的至少三个第一图案; 在其上形成有第一图案的第一掩模层上形成第二掩模层; 以及在所述第二掩模层中形成开口以覆盖所述至少三个第一图案的端部上的至少两个图案，由此形成由所述第一图案中的暴露的图案组成的标记。

3. 发明申请

US20100317196A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100317196A1
公开(公告)日：2010-12-16
申请号：US12712910
申请日：2010-02-25
申请人： Hiroko NAKAMURA
发明人： Hiroko NAKAMURA
IPC分类号： H01L21/308
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/0338
摘要： A method for manufacturing a semiconductor device, includes: forming a first resist on a workpiece; patterning the first resist by performing selective exposure, baking, and development on the first resist; forming a second resist on the workpiece after the patterning the first resist; patterning the second resist by performing selective exposure, baking, and development on the second resist to selectively remove a part of the second resist and remove the first resist left on the workpiece; and processing the workpiece by using the patterned second resist as a mask.
摘要翻译：一种制造半导体器件的方法，包括：在工件上形成第一抗蚀剂; 通过在第一抗蚀剂上进行选择性曝光，烘烤和显影来图案化第一抗蚀剂; 在对第一抗蚀剂进行图案化之后，在工件上形成第二抗蚀剂; 通过在第二抗蚀剂上进行选择性曝光，烘烤和显影以选择性地去除第二抗蚀剂的一部分并去除留在工件上的第一抗蚀剂来图案化第二抗蚀剂; 并通过使用图案化的第二抗蚀剂作为掩模来处理工件。

4. 发明授权

US07749687B2 Pattern forming method used in semiconductor device manufacturing and method of manufacturing semiconductor device 失效
标题翻译：半导体器件制造中使用的图案形成方法和半导体器件的制造方法
公开(公告)号：US07749687B2
公开(公告)日：2010-07-06
申请号：US11798724
申请日：2007-05-16
申请人： Hiroko Nakamura
发明人： Hiroko Nakamura
IPC分类号： G03C5/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/31058 , H01L21/31144 , H01L21/76816
摘要： A method of forming a pattern on a photosensitive resin film in lithography, a method of forming a pattern for a semiconductor device, and a method of manufacturing a semiconductor device using the patterned film are disclosed. In an aspect of the invention, there is provided a method of forming a pattern on a photosensitive resin film, comprising forming a processing-object film above a semiconductor substrate, forming a first patterned photosensitive resin layer on the processing-object film, implanting ions into the first patterned photosensitive resin layer, the sum (Rp+3dRp) of a projected range (Rp) for the ions in the first photosensitive resin layer and three times a standard deviation (dRp) of the projected range being greater than a thickness of the first patterned photosensitive resin layer, and forming a second patterned photosensitive resin layer on the ion-implanted first patterned photosensitive resin layer.
摘要翻译：公开了一种在光刻中在感光性树脂膜上形成图案的方法，形成半导体器件用图案的方法以及使用该图案化膜的半导体器件的制造方法。在本发明的一个方面，提供了一种在感光性树脂膜上形成图案的方法，包括在半导体衬底上形成处理对象膜，在处理对象膜上形成第一图案化感光树脂层，将离子在第一图案感光性树脂层中，第一感光性树脂层中的离子的投影范围（Rp）的和（Rp + 3dRp）和投影范围的标准偏差（dRp）的三倍大于第一图案化感光树脂层，并且在离子注入的第一图案化感光树脂层上形成第二图案化感光树脂层。

5. 发明授权

US07026099B2 Pattern forming method and method for manufacturing semiconductor device 失效
公开(公告)号：US07026099B2
公开(公告)日：2006-04-11
申请号：US10419921
申请日：2003-04-22
申请人： Hirokazu Kato , Yasunobu Onishi , Eishi Shiobara , Daisuke Kawamura , Hiroko Nakamura
发明人： Hirokazu Kato , Yasunobu Onishi , Eishi Shiobara , Daisuke Kawamura , Hiroko Nakamura
IPC分类号： G03F7/00
CPC分类号： H01L21/0279 , G03F7/0035 , H01L21/0275 , H01L21/0277 , H01L21/0278
摘要： A pattern forming method is disclosed which comprises providing a to-be-processed film on a substrate, providing a resist film on the to-be-processed film, patterning the resist film, providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound, subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound, and removing the resist film and processing the to-be-processed film, using the patterned film of the radiosensitive compound as a mask.

6. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

7. 发明授权

US5623306A Dark current suppression for solid state image sensing device 失效
标题翻译：固态摄像装置的暗电流抑制
公开(公告)号：US5623306A
公开(公告)日：1997-04-22
申请号：US494758
申请日：1995-06-26
申请人： Nobuyuki Kajihara , Gen Sudo , Kenji Arinaga , Koji Fujiwara , Hiroko Nakamura
发明人： Nobuyuki Kajihara , Gen Sudo , Kenji Arinaga , Koji Fujiwara , Hiroko Nakamura
IPC分类号： H01L27/148 , H04N5/335 , H04N5/347 , H04N5/361 , H04N5/365 , H04N5/367 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/3745 , H04N9/64
CPC分类号： H01L27/14856 , H01L27/14806 , H04N5/361 , H04N5/37206 , H04N5/372 , H04N5/374
摘要： A solid-state image sensing device having a plurality of pixels each of which outputs to a transmission portion (12) a signal charge corresponding to an amount of light projected thereon. The signal charge transmitted by the transmission portion (12) is outputted as an image signal for each pixel from the solid state image sensing device. Each pixel includes a photo-diode (32), a storage portion (41) for storing charge corresponding to a current output from the photo-diode (32) onto which light is projected, a transfer portion (42) for transferring the charge stored by the storage portion to the transmission portion, and a control portion (39) for controlling an amount of charge to be received by the transmission portion based on a dark current characteristic of a corresponding photo-diode (32).
摘要翻译：一种具有多个像素的固态图像感测装置，每个像素向传输部分（12）输出对应于投射在其上的光量的信号电荷。由固体摄像装置输出由发送部（12）发送的信号电荷作为每个像素的图像信号。每个像素包括光电二极管（32），存储部分（41），用于存储对应于光投射到光电二极管（32）的电流的电荷;转移部分（42），用于传送存储的电荷以及控制部（39），用于根据相应的光电二极管（32）的暗电流特性来控制由发送部分接收的电荷量。

8. 发明授权

US5591970A Charged beam apparatus 失效
标题翻译：带电束装置
公开(公告)号：US5591970A
公开(公告)日：1997-01-07
申请号：US527583
申请日：1995-09-13
申请人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
发明人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
IPC分类号： G01Q30/08 , G03F1/30 , G03F1/72 , G03F1/74 , H01J37/305 , H01L21/203 , H01L21/302 , H01L21/31 , H01L21/316 , H01J37/30
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/024 , H01J2237/31744
摘要： A charged beam apparatus of this invention comprises a sample table on which a sample is placed, a column for irradiating a charged beam on a surface of the sample, a gas supply mechanism having a gas supply opening for injecting a gas to an irradiated position of the charged beam, and a driving mechanism for moving the gas supply opening parallel to the surface of the sample in order to position the gas supply opening, and moving the gas supply opening perpendicularly to the surface of the sample in order to set a distance from the gas supply opening to a processing position. This allows the gas pressure to be stably held with a high accuracy at the processing position. Accordingly, desired deposition or etching can be performed with a high accuracy, and this further improves the quality of the mask.
摘要翻译：本发明的充电光束装置包括：样品台，放置样品的样品台;用于在样品表面照射带电束的色谱柱;气体供给机构，具有用于将气体注入照射位置的气体供给口带电束，以及用于使气体供给开口平行于样品表面移动以便定位气体供应开口的驱动机构，并且使气体供给开口垂直于样品的表面移动，以设定距离气体供应开口到处理位置。这样可以在加工位置高精度地稳定地保持气体压力。因此，可以高精度地进行期望的沉积或蚀刻，这进一步提高了掩模的质量。

9. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

10. 发明授权

US09207531B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US09207531B2
公开(公告)日：2015-12-08
申请号：US13239449
申请日：2011-09-22
申请人： Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
发明人： Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
IPC分类号： H01L21/31 , H01L21/469 , G03F7/00 , B81C1/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
摘要翻译：根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案，区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。用左图案蚀刻该胶片作为掩模。

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