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1. 发明授权

US11770516B2 Apparatus and methods for three-dimensional sensing 有权
公开(公告)号：US11770516B2
公开(公告)日：2023-09-26
申请号：US17646324
申请日：2021-12-29
申请人： Occipital, Inc.
发明人： Jeffrey Roger Powers , Vikas Muppidi Reddy , Paul Jakob Schroeder , Christopher Caleb Slaughter , Roger Wayne Landowski , Davis Thorp Foster , Evan Haley Fletcher
IPC分类号： H04N13/254 , G06T7/521 , H04N5/33 , H04N13/271 , H04N13/296 , H04N13/239 , H04N5/225 , H04N5/361 , H04N5/357 , H04N17/00 , H04N5/232 , G02B27/42 , G06T7/593 , H01S5/02325 , H01S5/02345 , H01S5/02355 , G01J1/42 , G02B27/10 , G02B27/30 , H01S5/00 , H01S5/024 , H01S5/42 , H04N23/11 , H04N23/56 , H04N23/65 , H04N25/61 , H04N25/63 , H04N13/00 , G01J1/44
CPC分类号： H04N13/254 , G01J1/4204 , G01J1/4257 , G02B27/106 , G02B27/1086 , G02B27/30 , G02B27/4205 , G06T7/521 , G06T7/593 , H01S5/0014 , H01S5/024 , H01S5/02325 , H01S5/02345 , H01S5/02355 , H01S5/423 , H04N13/239 , H04N13/271 , H04N13/296 , H04N17/002 , H04N23/11 , H04N23/56 , H04N23/65 , H04N25/61 , H04N25/63 , G01J2001/446 , G06T2207/10012 , G06T2207/10048 , H04N2013/0081
摘要： A three-dimensional (3D) sensing apparatus together with a projector subassembly is provided. The 3D sensing apparatus includes two cameras, which may be configured to capture ultraviolet and/or near-infrared light. The 3D sensing apparatus may also contain an optical filter and one or more computing processors that signal a simultaneous capture using the two cameras and processing the captured images into depth. The projector subassembly of the 3D sensing apparatus includes a laser diode, one or optical elements, and a photodiode that are useable to enable 3D capture.

2. 发明申请

US20230123494A1 SYSTEMS AND METHODS FOR SELECTIVELY MODIFYING GATING RATE IN SINGLE PHOTON AVALANCHE DIODES 有权
公开(公告)号：US20230123494A1
公开(公告)日：2023-04-20
申请号：US17505507
申请日：2021-10-19
申请人： Microsoft Technology Licensing, LLC
发明人： Raymond Kirk PRICE , Michael BLEYER , Christopher Douglas EDMONDS
IPC分类号： H04N5/355 , H04N5/361
摘要： A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is captured by performing a first plurality of gate operations to configure the SPAD array to enable photon detection over a frame capture time period. The first plurality of gate operations is performed at a first gating rate such that the first plurality of gate operations comprises a first quantity of gate operations performed over the frame capture time period. The system is further configurable to define a second gating rate based on the first frame metadata and capture a second image frame by performing a second plurality of gate operations to configure the SPAD array to enable photon detection at the second gating rate.

3. 发明申请

US20230050069A1 IMAGE SENSING DEVICE 有权
公开(公告)号：US20230050069A1
公开(公告)日：2023-02-16
申请号：US17870540
申请日：2022-07-21
申请人： SK hynix Inc.
发明人： Jae Hyung JANG , Jong Chae KIM , Jae Won LEE
IPC分类号： H01L27/146 , H04N5/361 , H04N5/3745 , G01S17/894
摘要： An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

4. 发明授权

US11582410B2 Dynamic vision sensor and image processing device including the same 有权
公开(公告)号：US11582410B2
公开(公告)日：2023-02-14
申请号：US17471459
申请日：2021-09-10
申请人： Samsung Electronics Co., Ltd.
发明人： Jong Woo Bong , Yun Jae Suh , Seung Nam Choi , Jun Seok Kim
IPC分类号： H04N5/355 , H04N5/343 , H04N5/369 , H04N5/3745 , H04N5/361
摘要： A dynamic vision sensor may include a pixel array including at least a first photoreceptor and a second photoreceptor, the first photoreceptor and the second photoreceptor including at least one first pixel and at least one second pixel, respectively, the at least one first pixel and the at least one second pixel configured to generate at least one first photocurrent and at least one second photocurrent in response to an incident light, respectively, and the first photoreceptor and the second photoreceptor configured to a first and second log voltages based on the at least one first photocurrent and the at least one second photocurrent, respectively, processing circuitry configured to, amplify the first and second log voltages, detect a change in intensity of the light based on the amplified first log voltage, the amplified second log voltage, and a reference voltage, and output an event signal corresponding to the detected value.

5. 发明授权

US11575850B2 Imaging device with drive-sense circuit(s) and methods for use therewith 有权
公开(公告)号：US11575850B2
公开(公告)日：2023-02-07
申请号：US17444951
申请日：2021-08-12
申请人： SigmaSense, LLC.
发明人： Michael Shawn Gray
IPC分类号： H04N5/3745 , H04N5/361 , H04N5/365
摘要： An imaging device includes pixel sensors. A drive-sense circuit is configured to generating a sensed signal corresponding to one of pixel sensors. The drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the pixel sensors. The drive-sense circuit is further configured to generate other sensed signals corresponding to other ones of the pixel sensors for the other ones of the pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the other sensed signals.

6. 发明申请

US20230012537A1 IMAGE PICKUP APPARATUS 有权
公开(公告)号：US20230012537A1
公开(公告)日：2023-01-19
申请号：US17950054
申请日：2022-09-21
申请人： OLYMPUS CORPORATION
发明人： Yoshinao SHIMADA
IPC分类号： H04N5/361 , H04N5/347 , H01L27/146
摘要： An image pickup apparatus includes an image sensor including a plurality of normal pixels and OB pixels obtained by dividing each pixel into n, and an image processing circuit. The image sensor can read each pixel row in a first read mode in which a pixel signal is generated and read or in a second read mode in which n signals relating to n divided pixel signals are read in n rows. The image processing circuit performs processing on signals read in the first and second read modes to generate image data and performs OB level correction processing on a normal pixel signal read from the normal pixels in the second read mode using an OB pixel signal read from the OB pixels in the first and second read modes.

7. 发明授权

US11557624B2 Image sensor and image capturing device 有权
公开(公告)号：US11557624B2
公开(公告)日：2023-01-17
申请号：US16953525
申请日：2020-11-20
申请人： NIKON CORPORATION
发明人： Shigeru Matsumoto
IPC分类号： H01L27/146 , H04N5/3745 , H04N5/361 , H04N5/378 , H04N5/357 , H04N5/369 , H01L31/02
摘要： An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.

8. 发明授权

US11495550B2 Solid-state image sensor including first and second unit pixel groups with different structures 有权
公开(公告)号：US11495550B2
公开(公告)日：2022-11-08
申请号：US16961859
申请日：2018-11-15
申请人： Sony Semiconductor Solutions Corporation
发明人： Marie Toyoshima , Taishin Yoshida
IPC分类号： H01L23/00 , G01J1/42 , H01L27/146 , H04N5/372 , H04N5/378 , H04N5/369 , H04N5/361 , H04N5/374 , H04N5/3745
摘要： To generate a value unique to a device in a more preferable mode.
A solid-state image sensor includes a plurality of unit pixels disposed in a two-dimensional array, and a drive control unit that controls a first drive to output signals from the unit pixels included in a first unit pixel group of the plurality of unit pixels as an image signal, and a second drive to detect variations in respective signals from two or more of the unit pixels included in a second unit pixel group of the plurality of unit pixels, in which the first unit pixel group and the second unit pixel group have different structures from each other.

9. 发明申请

US20220344390A1 ORGANIC CIS IMAGE SENSOR 有权
公开(公告)号：US20220344390A1
公开(公告)日：2022-10-27
申请号：US17772907
申请日：2020-07-27
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION , SONY GROUP CORPORATION
发明人： Akira FURUKAWA , Sho NISHIDA , Hideaki TOGASHI , Takushi SHIGETOSHI , Shinpei FUKUOKA , Junpei YAMAMOTO
IPC分类号： H01L27/146 , H04N5/361 , H04N5/369 , H01L27/148
摘要： To reduce a dark current of an image sensor including a photoelectric conversion unit disposed on a back surface of a semiconductor substrate.
The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge. The back-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the back surface of the semiconductor substrate and is formed to have a higher impurity concentration than an impurity concentration of a region adjacent to the through-electrode at the central portion of the semiconductor substrate. The front-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the front surface of the semiconductor substrate and is formed to have a higher impurity concentration than the impurity concentration of the region adjacent to the through-electrode at the central portion of the semiconductor substrate.

10. 发明授权

US11483508B2 Imaging apparatus, imaging system, moving object, and manufacturing method for imaging apparatus 有权
公开(公告)号：US11483508B2
公开(公告)日：2022-10-25
申请号：US16920192
申请日：2020-07-02
申请人： CANON KABUSHIKI KAISHA
发明人： Yoichi Wada
IPC分类号： H04N5/378 , H04N5/374 , H04N17/00 , H04N5/369 , H04N5/367 , H04N5/361
摘要： In an imaging apparatus, each of a plurality of pixels has a first semiconductor area having a first conductivity type, a floating diffusion area, and a transfer gate positioned between the first semiconductor area and the floating diffusion area. In a part of the plurality of pixels, a partial area of the first semiconductor area receives a potential supplied from a contact. The part of the plurality of pixels further has a second semiconductor area having a second conductivity type positioned between the partial area and the transfer gate in a planar view.

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