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1. 发明授权

US6028953A Mask defect repair system and method which controls a dose of a particle beam 失效
标题翻译：掩模缺陷修复系统和控制粒子束剂量的方法
公开(公告)号：US6028953A
公开(公告)日：2000-02-22
申请号：US90342
申请日：1998-06-04
申请人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
发明人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
IPC分类号： G03F1/32 , G03F1/72 , G06K9/00 , H01L21/027
CPC分类号： G03F1/26 , G03F1/74 , G03F1/32 , H01J2237/31742
摘要： A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.
摘要翻译：一种掩模缺陷修复系统，其通过照射粒子束，在由透明基板制成的掩模和形成在基板上的掩模材料上进行修补，包括：成像光束照射单元，用于二维扫描和照射成像用光束在掩模的表面上，具有检测器，用于通过照射用于成像的光束来检测从掩模的表面发射的二次粒子的第一强度分布;图像处理单元，用于执行至少部分第一强度分布的图像处理的第二强度分布，用于将第一和第二强度分布显示为图像的图像显示单元，用于在图像上设置要用光束处理的期望区域的外部输入单元，照射区域确定单元，用于基于第二强度dis来确定在待处理的所需区域上的束照射区域用于在束照射区域照射用于缺陷修复的光束的修复光束照射单元，以及用于将蚀刻气体或沉积气体供应到掩模的表面的气体供给单元。

2. 发明授权

US5837405A Reticle 失效
标题翻译：标线
公开(公告)号：US5837405A
公开(公告)日：1998-11-17
申请号：US958869
申请日：1997-10-27
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

3. 发明授权

US5807650A Photo mask and apparatus for repairing photo mask 失效
标题翻译：照片面具和修复照相机的设备
公开(公告)号：US5807650A
公开(公告)日：1998-09-15
申请号：US914809
申请日：1997-08-20
申请人： Haruki Komano , Hiroko Nakamura , Munehiro Ogasawara , Satoshi Masuda , Katsuya Okumura , Yoji Ogawa
发明人： Haruki Komano , Hiroko Nakamura , Munehiro Ogasawara , Satoshi Masuda , Katsuya Okumura , Yoji Ogawa
IPC分类号： G03F1/26 , G03F1/74 , G03F9/00
CPC分类号： G03F1/26 , G03F1/74
摘要： A method of repairing a defect existing on a photo mask comprising a transparent substrate and a mask pattern formed on the substrate, comprises steps of irradiating a focused ion beam toward the defect and supplying XeF.sub.2 gas to the defect, when an etching rate of the defect by the focused ion beam and XeF.sub.2 is 1.7 times greater than an etching rate by a sole irradiation of the focused ion beam.
摘要翻译：一种修复存在于光掩模上的缺陷的方法，包括透明基板和形成在基板上的掩模图案，包括以下步骤：当缺陷的蚀刻速率为缺陷时，将注入的离子束照射到缺陷并向缺陷提供XeF 2气体通过聚焦离子束和XeF2是通过单独照射聚焦离子束的蚀刻速率的1.7倍。

4. 发明授权

US5660956A Reticle and method of fabricating reticle 失效
标题翻译：刻线及其制作方法
公开(公告)号：US5660956A
公开(公告)日：1997-08-26
申请号：US608946
申请日：1996-02-29
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

5. 发明授权

US5595844A Method of exposing light in a method of fabricating a reticle 失效
标题翻译：在制作掩模版的方法中曝光光的方法
公开(公告)号：US5595844A
公开(公告)日：1997-01-21
申请号：US453667
申请日：1995-05-30
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

6. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

7. 发明授权

US5591970A Charged beam apparatus 失效
标题翻译：带电束装置
公开(公告)号：US5591970A
公开(公告)日：1997-01-07
申请号：US527583
申请日：1995-09-13
申请人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
发明人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
IPC分类号： G01Q30/08 , G03F1/30 , G03F1/72 , G03F1/74 , H01J37/305 , H01L21/203 , H01L21/302 , H01L21/31 , H01L21/316 , H01J37/30
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/024 , H01J2237/31744
摘要： A charged beam apparatus of this invention comprises a sample table on which a sample is placed, a column for irradiating a charged beam on a surface of the sample, a gas supply mechanism having a gas supply opening for injecting a gas to an irradiated position of the charged beam, and a driving mechanism for moving the gas supply opening parallel to the surface of the sample in order to position the gas supply opening, and moving the gas supply opening perpendicularly to the surface of the sample in order to set a distance from the gas supply opening to a processing position. This allows the gas pressure to be stably held with a high accuracy at the processing position. Accordingly, desired deposition or etching can be performed with a high accuracy, and this further improves the quality of the mask.
摘要翻译：本发明的充电光束装置包括：样品台，放置样品的样品台;用于在样品表面照射带电束的色谱柱;气体供给机构，具有用于将气体注入照射位置的气体供给口带电束，以及用于使气体供给开口平行于样品表面移动以便定位气体供应开口的驱动机构，并且使气体供给开口垂直于样品的表面移动，以设定距离气体供应开口到处理位置。这样可以在加工位置高精度地稳定地保持气体压力。因此，可以高精度地进行期望的沉积或蚀刻，这进一步提高了掩模的质量。

8. 发明授权

US5589305A Method of fabricating a reticle 失效
标题翻译：制作掩模版的方法
公开(公告)号：US5589305A
公开(公告)日：1996-12-31
申请号：US453465
申请日：1995-05-30
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

9. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

10. 发明授权

US5799104A Mask defect repair system and method 失效
标题翻译：面膜缺陷修复系统及方法
公开(公告)号：US5799104A
公开(公告)日：1998-08-25
申请号：US670315
申请日：1996-08-22
申请人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
发明人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
IPC分类号： G03F1/32 , G03F1/72 , G06K9/00 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/74 , G03F1/32 , H01J2237/31742
摘要： A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.
摘要翻译：一种掩模缺陷修复系统，其通过照射粒子束，在由透明基板制成的掩模和形成在基板上的掩模材料上进行修补，包括：成像光束照射单元，用于二维扫描和照射成像用光束在掩模的表面上，具有检测器，用于通过照射用于成像的光束来检测从掩模的表面发射的二次粒子的第一强度分布;图像处理单元，用于执行至少部分第一强度分布的图像处理的第二强度分布，用于将第一和第二强度分布显示为图像的图像显示单元，用于在图像上设置要用光束处理的期望区域的外部输入单元，照射区域确定单元，用于基于第二强度dis来确定在待处理的所需区域上的束照射区域用于在束照射区域照射用于缺陷修复的光束的修复光束照射单元，以及用于将蚀刻气体或沉积气体供应到掩模的表面的气体供给单元。

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