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1. 发明授权

US5591970A Charged beam apparatus 失效
标题翻译：带电束装置
公开(公告)号：US5591970A
公开(公告)日：1997-01-07
申请号：US527583
申请日：1995-09-13
申请人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
发明人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
IPC分类号： G01Q30/08 , G03F1/30 , G03F1/72 , G03F1/74 , H01J37/305 , H01L21/203 , H01L21/302 , H01L21/31 , H01L21/316 , H01J37/30
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/024 , H01J2237/31744
摘要： A charged beam apparatus of this invention comprises a sample table on which a sample is placed, a column for irradiating a charged beam on a surface of the sample, a gas supply mechanism having a gas supply opening for injecting a gas to an irradiated position of the charged beam, and a driving mechanism for moving the gas supply opening parallel to the surface of the sample in order to position the gas supply opening, and moving the gas supply opening perpendicularly to the surface of the sample in order to set a distance from the gas supply opening to a processing position. This allows the gas pressure to be stably held with a high accuracy at the processing position. Accordingly, desired deposition or etching can be performed with a high accuracy, and this further improves the quality of the mask.
摘要翻译：本发明的充电光束装置包括：样品台，放置样品的样品台;用于在样品表面照射带电束的色谱柱;气体供给机构，具有用于将气体注入照射位置的气体供给口带电束，以及用于使气体供给开口平行于样品表面移动以便定位气体供应开口的驱动机构，并且使气体供给开口垂直于样品的表面移动，以设定距离气体供应开口到处理位置。这样可以在加工位置高精度地稳定地保持气体压力。因此，可以高精度地进行期望的沉积或蚀刻，这进一步提高了掩模的质量。

2. 发明授权

US6028953A Mask defect repair system and method which controls a dose of a particle beam 失效
标题翻译：掩模缺陷修复系统和控制粒子束剂量的方法
公开(公告)号：US6028953A
公开(公告)日：2000-02-22
申请号：US90342
申请日：1998-06-04
申请人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
发明人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
IPC分类号： G03F1/32 , G03F1/72 , G06K9/00 , H01L21/027
CPC分类号： G03F1/26 , G03F1/74 , G03F1/32 , H01J2237/31742
摘要： A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.
摘要翻译：一种掩模缺陷修复系统，其通过照射粒子束，在由透明基板制成的掩模和形成在基板上的掩模材料上进行修补，包括：成像光束照射单元，用于二维扫描和照射成像用光束在掩模的表面上，具有检测器，用于通过照射用于成像的光束来检测从掩模的表面发射的二次粒子的第一强度分布;图像处理单元，用于执行至少部分第一强度分布的图像处理的第二强度分布，用于将第一和第二强度分布显示为图像的图像显示单元，用于在图像上设置要用光束处理的期望区域的外部输入单元，照射区域确定单元，用于基于第二强度dis来确定在待处理的所需区域上的束照射区域用于在束照射区域照射用于缺陷修复的光束的修复光束照射单元，以及用于将蚀刻气体或沉积气体供应到掩模的表面的气体供给单元。

3. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

4. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

5. 发明授权

US5799104A Mask defect repair system and method 失效
标题翻译：面膜缺陷修复系统及方法
公开(公告)号：US5799104A
公开(公告)日：1998-08-25
申请号：US670315
申请日：1996-08-22
申请人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
发明人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
IPC分类号： G03F1/32 , G03F1/72 , G06K9/00 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/74 , G03F1/32 , H01J2237/31742
摘要： A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.
摘要翻译：一种掩模缺陷修复系统，其通过照射粒子束，在由透明基板制成的掩模和形成在基板上的掩模材料上进行修补，包括：成像光束照射单元，用于二维扫描和照射成像用光束在掩模的表面上，具有检测器，用于通过照射用于成像的光束来检测从掩模的表面发射的二次粒子的第一强度分布;图像处理单元，用于执行至少部分第一强度分布的图像处理的第二强度分布，用于将第一和第二强度分布显示为图像的图像显示单元，用于在图像上设置要用光束处理的期望区域的外部输入单元，照射区域确定单元，用于基于第二强度dis来确定在待处理的所需区域上的束照射区域用于在束照射区域照射用于缺陷修复的光束的修复光束照射单元，以及用于将蚀刻气体或沉积气体供应到掩模的表面的气体供给单元。

6. 发明授权

US07745073B2 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same 失效
标题翻译：半导体器件的制造方法，模板掩模及其制造方法
公开(公告)号：US07745073B2
公开(公告)日：2010-06-29
申请号：US12289895
申请日：2008-11-06
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： G03F9/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

7. 发明授权

US06316163B1 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US06316163B1
公开(公告)日：2001-11-13
申请号：US09163421
申请日：1998-09-30
申请人： Shunko Magoshi , Masamitsu Itoh , Shinji Sato , Soichi Inoue , Kazuyoshi Sugihara , Katsuya Okumura
发明人： Shunko Magoshi , Masamitsu Itoh , Shinji Sato , Soichi Inoue , Kazuyoshi Sugihara , Katsuya Okumura
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/78 , G03F7/7045 , H01J37/3174
摘要： A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.
摘要翻译：一种用于形成图案的方法，其中使用曝光和带电粒子束曝光两者进行对第一层上的相同感光材料的图案转印，包括以下步骤：在与待转印图案相关联的数据之间执行预定的几何运算将与要传送到不同于第一层的第二层的图案相关联的数据相关联的数据与将要传送到第一层的图案相关联的图案数据分离成用于带电粒子束曝光的第一曝光图案数据和第二层用于曝光的曝光图案数据，以及基于分离结果将图案转印到第一层上。

8. 发明授权

US6093931A Pattern-forming method and lithographic system 失效
标题翻译：图案形成方法和平版印刷系统
公开(公告)号：US6093931A
公开(公告)日：2000-07-25
申请号：US410018
申请日：1999-10-01
申请人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
发明人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/203 , G03F7/2059 , G03F7/7045 , H01J37/3174
摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.
摘要翻译：通过光分辨率形成超过曝光分辨率极限的粗糙图案。通过电荷束曝光形成不超过曝光的分辨率极限的精细图案。结合粗糙图案和精细图案产生期望的图案。曝光和电荷束曝光之间的工作共享表现出高曝光量和电荷束曝光的优异分辨能力。

9. 发明授权

US4469949A Electron beam pattern transfer device and method for aligning mask and semiconductor wafer 失效
标题翻译：用于对准掩模和半导体晶片的电子束图案转移装置和方法
公开(公告)号：US4469949A
公开(公告)日：1984-09-04
申请号：US374724
申请日：1982-05-04
申请人： Ichiro Mori , Kazuyoshi Sugihara , Toshiaki Shinozaki , Toru Tojo
发明人： Ichiro Mori , Kazuyoshi Sugihara , Toshiaki Shinozaki , Toru Tojo
IPC分类号： H01L21/027 , H01J37/304 , H01L21/30 , H01J37/00
CPC分类号： H01L21/30 , H01J37/3045
摘要： According to the invention an electron beam pattern transfer device with an improved alignment means is provided.A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.2 and M.sub.3 is made substantially equal to the difference between the distance L.sub.1 and the known distance L.sub. 2.
摘要翻译：根据本发明，提供了具有改进的对准装置的电子束图案转印装置。分别在晶片和晶片保持器的表面上形成用于对准目的的第一和第二标记M1，M2。第一标记M1通过常规平版印刷技术在晶片上形成，第二标记M2由孔或重金属如Ta或Ta2O5组成。第三对准标记M3设置在光电阴极掩模上，其具有对应于晶片保持器上的M2的位置，并且与掩模上的假想参考位置M4隔开已知距离L2。对准处理的第一步骤需要通过诸如光学测量装置的常规检测装置检测第一和第二标记M1，M2之间的相对距离L1。在下一步骤中，调整光电阴极掩模和晶片保持器的相对位置，使得标记M2和M3之间的距离基本上等于距离L1和已知距离L 2之间的差。

10. 发明申请

US20090139449A1 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same 失效
标题翻译：半导体器件的制造方法，模板掩模及其制造方法
公开(公告)号：US20090139449A1
公开(公告)日：2009-06-04
申请号：US12289895
申请日：2008-11-06
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： B05C11/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

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