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1. 发明公开

US20240210564A1 Optical Sensing Apparatus 审中-公开
公开(公告)号：US20240210564A1
公开(公告)日：2024-06-27
申请号：US18491337
申请日：2023-10-20
申请人： Artilux, Inc.
发明人： Peng-Sheng Chen
IPC分类号： G01S17/894 , G01S7/481 , H01L27/148 , H04N25/60 , H04N25/76 , H04N25/77
CPC分类号： G01S17/894 , G01S7/4816 , H01L27/14856 , H04N25/60 , H04N25/77 , H04N25/7795
摘要： Apparatuses for optical and image sensing are disclosed herein. The optical sensing apparatus can include a first and a second signal wire. The optical sensing apparatus can include N photodetectors arranged in an array, connected to the first signal wire and a second input terminal connected to the second signal wire. The optical sensing apparatus can include a modulation circuit configured to generate a modulated signal including a source transistor pair, a sink transistor pair, and a second sink transistor wherein a first photodetector of the N photodetectors is arranged between the source transistor pair and an Nth photodetector of the N photodetectors, and the Nth photodetector of the N photodetectors is arranged between the sink transistor pair and the first photodetector of the N photodetectors.

2. 发明授权

US11784200B2 Image sensing device having multiple transfer gate structure 有权
公开(公告)号：US11784200B2
公开(公告)日：2023-10-10
申请号：US16597572
申请日：2019-10-09
申请人： SK hynix Inc.
发明人： Tae Lim Gu , Yun Hui Yang
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14614 , H01L27/14641 , H01L27/14643 , H01L27/14856
摘要： An image sensing device includes a photoelectric conversion element configured to generate photocharges in response to incident light, a floating diffusion configured to temporarily store the photocharges generated by the photoelectric conversion element, and a transfer gate configured to transmit the photocharges generated by the photoelectric conversion element to the floating diffusion region. The transfer gate includes a main transfer gate disposed to overlap a center section of the photoelectric conversion element and configured to operate in response to a first transmission signal, and a sub transfer gate disposed to overlap a boundary region of the photoelectric conversion element and configured to operate in response to a second potential level different from the first potential level.

3. 发明申请

US20180120458A1 RADIOGRAPHY APPARATUS, RADIOGRAPHY METHOD, AND RADIOGRAPHY PROGRAM 审中-公开
公开(公告)号：US20180120458A1
公开(公告)日：2018-05-03
申请号：US15792775
申请日：2017-10-25
申请人： FUJIFILM CORPORATION
发明人： Kenji NAKAMURA
IPC分类号： G01T1/29 , H04N5/32 , G01D18/00 , H01L27/148 , H04N5/353 , G01T1/20
CPC分类号： G01T1/2928 , A61B6/4208 , A61B6/4233 , A61B6/462 , A61B6/487 , A61B6/54 , A61B6/542 , G01D18/006 , G01T1/17 , G01T1/20 , G01T1/208 , H01L27/14856 , H04N5/32 , H04N5/353
摘要： A radiography apparatus includes: a radiation detector that includes a plurality of pixels, each of which includes a thin film transistor and which are two-dimensionally arranged, and data lines through which charge accumulated in the connected pixels is transmitted as an electric signal; and a first sample-and-hold unit and a second sample-and-hold unit that sample and hold the electric signal transmitted through the data line. In a case in which the charge accumulated in the pixel is read out, the radiography apparatus performs control such that the thin film transistor is turned off and the first sample-and-hold unit samples and holds a first electric signal transmitted through the data line; and the thin film transistor is turned on and the second sample-and-hold unit samples and holds a second electric signal transmitted through the data line.

4. 发明授权

US09905609B2 Manufacturing of an imager device and imager device 有权
公开(公告)号：US09905609B2
公开(公告)日：2018-02-27
申请号：US15637478
申请日：2017-06-29
申请人： Infineon Technologies AG
发明人： Dirk Offenberg , Henning Feick , Stefano Parascandola
IPC分类号： H01L27/00 , H01L27/148 , H01L27/146 , G01S7/486 , H04N5/369
CPC分类号： H01L27/14856 , G01S7/4865 , G01S7/4914 , H01L27/14601 , H01L27/14683 , H04N5/369
摘要： Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

5. 发明授权

US09093353B2 Matrix image sensor providing bidirectional charge transfer with asymmetric gates 有权
标题翻译：矩阵图像传感器提供双向电荷转移与非对称门
公开(公告)号：US09093353B2
公开(公告)日：2015-07-28
申请号：US14397725
申请日：2013-04-11
申请人： E2V SEMICONDUCTORS
发明人： Frédéric Mayer
IPC分类号： H01L27/148 , H01L27/146 , H01L27/105 , H01L29/765
CPC分类号： H01L27/14812 , H01L27/1057 , H01L27/14627 , H01L27/14825 , H01L27/14856 , H01L27/14868 , H01L29/765
摘要： In the field of image sensors, more particularly time-delay integration linear sensors or TDI sensors, a sensor comprises rows of photodiodes alternating with rows of gates adjacent to the photodiodes. The gates are asymmetric, adjacent on one side to a photodiode and having, on the other side, narrow gate fingers extending toward another photodiode. Owing to their very narrow width, the fingers endow the transfer of charges with a directionality. Between two successive photodiodes there are two gates, the two being adjacent to the two photodiodes, the first having its narrow fingers turned toward the first photodiode, the second having its narrow fingers turned toward the second photodiode. The direction of transfer of the charges in the sensor may be chosen by neutralizing either the first gate or the second gate, the other gate receiving alternating potentials allowing the transfer of charges from one photodiode to the other.
摘要翻译：在图像传感器领域中，更具体地，延时积分线性传感器或TDI传感器，传感器包括与邻近光电二极管的栅极行交替的一行光电二极管。栅极是不对称的，在一侧相对于光电二极管，另一侧具有朝向另一个光电二极管延伸的窄栅极指。由于它们的宽度非常窄，手指赋予了方向性的电荷转移。在两个连续的光电二极管之间有两个栅极，两个栅极与两个光电二极管相邻，第一栅极具有朝向第一光电二极管的窄指状物，第二栅极具有朝向第二光电二极管的窄指状物。可以通过中和第一栅极或第二栅极来选择传感器中的电荷的传输方向，另一个栅极接收允许将电荷从一个光电二极管传递到另一个的交替电位。

6. 发明申请

US20130140609A1 MATRIX CHARGE-TRANSFER IMAGE SENSOR WITH ASYMMETRIC GATE 有权
标题翻译：具有不对称门的矩阵充电传输图像传感器
公开(公告)号：US20130140609A1
公开(公告)日：2013-06-06
申请号：US13698318
申请日：2011-05-05
申请人： Frederic Mayer , Ray Bell
发明人： Frederic Mayer , Ray Bell
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14856
摘要： The invention relates to image sensors, more particularly but not exclusively to scanning sensors with signal integration (or TDI sensors, for ‘Time Delay Integration linear sensors’). The adjacent pixels along a column each comprise an alternation of at least one photodiode and one storage gate adjacent to the photodiode. The gates comprise a main body and, on the upstream side in the direction of the transfer of the charges but not on the downstream side, a series of narrow fingers extending from the main body toward the upstream side, the ends of the fingers on the upstream side being adjacent to a photodiode situated upstream of the gate, the narrow fingers being separated from one another by doped insulating regions of the first type of conductivity, with a higher doping and preferably deeper than the surface regions, connected, as they are, to the reference potential of the active layer, these insulating regions being interposed between the main body of the gate and the photodiode. These fingers induce a directionality on the charge transfer.
摘要翻译：本发明涉及图像传感器，更具体地但不排他地涉及具有信号积分的扫描传感器（或TDI传感器，用于“时间延迟积分线性传感器”）。沿着列的相邻像素每个包括与光电二极管相邻的至少一个光电二极管和一个存储栅极的交替。门包括主体，并且在电荷转移方向的上游侧，而不是在下游侧，具有从主体朝向上游侧延伸的一系列窄指状物，手指的端部在上游侧与位于栅极上游的光电二极管相邻，窄指状物通过第一类型导电性的掺杂绝缘区彼此分离，具有更高的掺杂，优选地比表面区域更深，直接连接，到有源层的参考电位，这些绝缘区域被插入在栅极的主体和光电二极管之间。这些手指诱导电荷转移的方向性。

7. 发明申请

US20120248516A1 MULTILINEAR IMAGE SENSOR WITH CHARGE INTEGRATION 有权
标题翻译：具有充电整合的多线性图像传感器
公开(公告)号：US20120248516A1
公开(公告)日：2012-10-04
申请号：US13514982
申请日：2010-12-02
申请人： Frederic Mayer
发明人： Frederic Mayer
IPC分类号： H01L31/113
CPC分类号： H01L27/14856 , H01L27/14812
摘要： The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.
摘要翻译：本发明涉及线性时间延迟和集成传感器（或TDI传感器）。根据本发明，相同秩的相邻像素交替地包括与光电二极管相邻的至少一个光电二极管和一个传输门，光电二极管包括第一导电类型的公共参考区域，其中具有相反导电类型的单个区域形成，其本身由第一导电类型的单个表面区域覆盖，其特征在于，位于传输门的任一侧的两个光电二极管的表面区域被电分离，以便能够被带到不同的电位，以便创造潜在的井和潜在的障碍，允许根据需要累积和转移收费。

8. 发明授权

US06465820B1 CMOS compatible single phase CCD charge transfer device 有权
标题翻译： CMOS兼容单相CCD电荷转移装置
公开(公告)号：US06465820B1
公开(公告)日：2002-10-15
申请号：US09393312
申请日：1999-09-10
申请人： Eric Fox
发明人： Eric Fox
IPC分类号： H01L27148
CPC分类号： H01L27/14856 , H01L27/14806
摘要： A single phase charge-couple device (CCD) transfer device in a substrate of a first conductivity type. The device includes a gated region and a photo-diode region. The gated region includes a gated part and a gate electrode insulatively spaced over the gated part. The photo-diode region includes first, second, and third diode sub-regions. The second diode sub-region is formed of a second conductivity type; the third diode sub-region is formed of the first conductivity type in the second diode sub-region; and the first diode sub-region is formed of the first conductivity type in the second diode sub-region. The first and third diode sub-regions contain different dopant concentrations. The gated part is either a buried channel gated part or a surface channel gated part. The buried channel gated part includes a channel of the second conductivity type and a first gated sub-region formed in the channel.
摘要翻译：在第一导电类型的衬底中的单相电荷耦合器件（CCD）传输器件。该器件包括门控区域和光电二极管区域。门控区域包括选通部分和在门控部分上绝缘间隔开的栅电极。光电二极管区域包括第一，第二和第三二极管子区域。第二二极管子区域由第二导电类型形成; 第二二极管子区域由第二二极管子区域中的第一导电类型形成; 并且第一二极管子区域由第二二极管子区域中的第一导电类型形成。第一和第三二极管子区域含有不同的掺杂剂浓度。门控部分是埋入通道门控部件或表面通道门控部件。埋入通道门控部分包括形成在通道中的第二导电类型的通道和第一选通子区域。

9. 发明授权

US5334868A Sidewall charge-coupled device with trench isolation 失效
标题翻译：侧壁电荷耦合器件具有沟槽隔离
公开(公告)号：US5334868A
公开(公告)日：1994-08-02
申请号：US57425
申请日：1993-05-05
申请人： Hon-Sum P. Wong
发明人： Hon-Sum P. Wong
IPC分类号： H01L21/763 , H01L27/148 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14856 , H01L21/763 , H01L27/14812 , H01L27/14831
摘要： A charge-coupled imaging device comprising a plurality of trenches in the surface of the silicon substrate which separate adjacent columns in the CCD device. A plurality of surface electrodes are provided on the surface of the charge-coupled device extending perpendicular to the isolation trenches, which electrodes provide for clocked transfer of charges between adjacent cells within each column of the charge-coupled device. The CCD cells are formed on the silicon ridges delineated between the isolation trenches, and this structure maximizes the three dimensional surface area of the CCD cells and facilitates transport of charges along the CCD cell sidewalls. The sidewall CCD with trench isolation provides a CCD cell layout size the same as that of a conventional two dimensional CCD cell, but with an increased charge capacity per CCD cell because of the larger three dimensional areas of the CCD cells. The increase in charge capacity means a larger signal-to-noise ratio and consequently a larger dynamic range. In one embodiment, a plurality of shallow electrodes are defined under the surface electrodes to increase the charge carrying surface area and provide better gate control.
摘要翻译：一种电荷耦合成像装置，其在所述硅基板的表面中包括在所述CCD器件中分离相邻列的多个沟槽。多个表面电极设置在垂直于隔离沟槽延伸的电荷耦合器件的表面上，这些电极提供电荷耦合器件的每列内的相邻单元之间的电荷时钟传输。 CCD单元形成在描绘在隔离沟槽之间的硅脊上，并且该结构使CCD单元的三维表面积最大化并且有助于电荷沿着CCD单元侧壁的传输。具有沟槽隔离的侧壁CCD提供与常规二维CCD单元相同的CCD单元布局尺寸，但是由于CCD单元的较大的三维区域，每个CCD单元具有增加的电荷容量。充电容量的增加意味着较大的信噪比，因此具有较大的动态范围。在一个实施例中，多个浅电极被限定在表面电极下面，以增加电荷承载表面积并提供更好的栅极控制。

10. 发明授权

US5113263A Reduced size accurate solid-state camera having low power consumption 失效
标题翻译：减小尺寸精确的具有低功耗的固态摄像机
公开(公告)号：US5113263A
公开(公告)日：1992-05-12
申请号：US634759
申请日：1990-12-27
申请人： Luc Audaire , Philippe Pantigny
发明人： Luc Audaire , Philippe Pantigny
IPC分类号： G01J1/44 , H01L27/148 , H01L29/76 , H01L29/772 , H04N5/225 , H04N5/33 , H04N5/372
CPC分类号： H04N5/37206 , H01L27/14856 , H04N3/1525 , H04N3/1531 , H04N3/1575
摘要： A reduced size solid state camera includes an array of detectors having reading circuits and electronic row and column scanning circuits utilizing CCD-type structures. Each of the column scanning circuits has an integrated part adjacent the detectors with a spacing equal to or smaller than that of the rows of detectors. The movement of the image to be photographed takes place in a direction perpendicular to the columns of detectors and may occur in two successive opposite directions. A scanning circuit for the row supplies a signal representing an image for each image movement direction. The circuitry includes a signal processor which sums up the signals corresponding to the same element of the image that has moved passed all of the detectors of a row.
摘要翻译：缩小尺寸的固态照相机包括具有读取电路的检测器阵列和利用CCD型结构的电子行和列扫描电路。每个列扫描电路具有与检测器相邻的检测器的集成部分，其间隔等于或小于检测器行的间隔。要拍摄的图像的移动在垂直于检测器列的方向上发生，并且可以在两个连续的相反方向上发生。该行的扫描电路为每个图像移动方向提供表示图像的信号。该电路包括信号处理器，其对与已经移动通过行的所有检测器的图像的相同元素相对应的信号进行求和。

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