专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5534109A Method for etching HgCdTe substrate 失效
标题翻译：蚀刻HgCdTe基板的方法
公开(公告)号：US5534109A
公开(公告)日：1996-07-09
申请号：US320249
申请日：1994-10-11
申请人： Koji Fujiwara , Gen Sudo , Kenji Arinaga
发明人： Koji Fujiwara , Gen Sudo , Kenji Arinaga
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/465 , H01L31/18 , H01L21/306 , B44C1/22
CPC分类号： H01L31/1832 , H01L21/465
摘要： A method for etching an HgCdTe substrate selectively by dry etching. A substrate is selectively etched without damaging the substrate during a simple process in which the higher selectivity of an HgCdTe substrate versus a resist mask is obtainable. Removal of the resist mask after etching is easy. The etching gas contains molecules having a bond of nitrogen and hydrogen and is formed into plasma. An HgCdTe substrate is etched with a resist film as a mask by the plasma gas.
摘要翻译：通过干蚀刻选择性地蚀刻HgCdTe衬底的方法。在可以获得HgCdTe衬底与抗蚀剂掩模的更高选择性的简单工艺中，衬底被选择性地蚀刻而不损坏衬底。蚀刻后去除抗蚀剂掩模容易。蚀刻气体含有具有氮和氢键的分子并形成等离子体。用等离子体气体用抗蚀剂膜作为掩模蚀刻HgCdTe衬底。

2. 发明授权

US5623306A Dark current suppression for solid state image sensing device 失效
标题翻译：固态摄像装置的暗电流抑制
公开(公告)号：US5623306A
公开(公告)日：1997-04-22
申请号：US494758
申请日：1995-06-26
申请人： Nobuyuki Kajihara , Gen Sudo , Kenji Arinaga , Koji Fujiwara , Hiroko Nakamura
发明人： Nobuyuki Kajihara , Gen Sudo , Kenji Arinaga , Koji Fujiwara , Hiroko Nakamura
IPC分类号： H01L27/148 , H04N5/335 , H04N5/347 , H04N5/361 , H04N5/365 , H04N5/367 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/3745 , H04N9/64
CPC分类号： H01L27/14856 , H01L27/14806 , H04N5/361 , H04N5/37206 , H04N5/372 , H04N5/374
摘要： A solid-state image sensing device having a plurality of pixels each of which outputs to a transmission portion (12) a signal charge corresponding to an amount of light projected thereon. The signal charge transmitted by the transmission portion (12) is outputted as an image signal for each pixel from the solid state image sensing device. Each pixel includes a photo-diode (32), a storage portion (41) for storing charge corresponding to a current output from the photo-diode (32) onto which light is projected, a transfer portion (42) for transferring the charge stored by the storage portion to the transmission portion, and a control portion (39) for controlling an amount of charge to be received by the transmission portion based on a dark current characteristic of a corresponding photo-diode (32).
摘要翻译：一种具有多个像素的固态图像感测装置，每个像素向传输部分（12）输出对应于投射在其上的光量的信号电荷。由固体摄像装置输出由发送部（12）发送的信号电荷作为每个像素的图像信号。每个像素包括光电二极管（32），存储部分（41），用于存储对应于光投射到光电二极管（32）的电流的电荷;转移部分（42），用于传送存储的电荷以及控制部（39），用于根据相应的光电二极管（32）的暗电流特性来控制由发送部分接收的电荷量。

3. 发明授权

US5449944A Semiconductor infrared image pickup device and method of fabricating the same 失效
标题翻译：半导体红外图像拾取装置及其制造方法
公开(公告)号：US5449944A
公开(公告)日：1995-09-12
申请号：US352777
申请日：1994-12-01
申请人： Gen Sudo , Soichiro Hikida
发明人： Gen Sudo , Soichiro Hikida
IPC分类号： H01L27/146 , H01L23/48 , H01L29/40
CPC分类号： H01L27/14623 , H01L27/1465 , H01L27/1469
摘要： A semiconductor image pickup device comprises a photo-sensing substrate and a signal processing substrate, wherein the photo-sensing substrate further comprises a plurality of detector elements, and the signal processing substrate comprises a plurality of input diodes, each detector element being operatively connected to the respective input diode. The detector elements are isolated and light shielded from each other and further from the signal processing substrate by a light shield layer, and each detector element has an input port for incident rays on an input side of the photo-sensing substrate and has a surface region on the opposite side for outputting a signal to the input diode. The light shield layer of the invention comprises an insulation multilayer and a metal layer laminated in this order from the input side of the incident rays. The embodiments utilize a silicon nitride layer and zinc sulphide layer as the insulation multilayer.
摘要翻译：半导体图像拾取装置包括感光基板和信号处理基板，其中光感测基板还包括多个检测器元件，并且信号处理基板包括多个输入二极管，每个检测器元件可操作地连接到相应的输入二极管。检测器元件通过遮光层彼此隔离和隔离并且进一步从信号处理基板被隔离，并且每个检测器元件具有用于在感光基板的输入侧上的入射光线的输入端口，并且具有表面区域在相对侧用于向输入二极管输出信号。本发明的遮光层包括从入射光线的输入侧依次层叠的绝缘多层膜和金属层。实施例使用氮化硅层和硫化锌层作为绝缘多层。

4. 发明授权

US5196692A Photoelectric transducer switchable to a high-resolution or high-sensitivity mode 失效
标题翻译：光电转换器可切换到高分辨率或高灵敏度模式
公开(公告)号：US5196692A
公开(公告)日：1993-03-23
申请号：US825497
申请日：1992-01-24
申请人： Kenji Arinaga , Nobuyuki Kajihara , Gen Sudo , Koji Fujiwara , Soichiro Hikida , Yuichiro Ito
发明人： Kenji Arinaga , Nobuyuki Kajihara , Gen Sudo , Koji Fujiwara , Soichiro Hikida , Yuichiro Ito
IPC分类号： H01L27/14 , H01L27/146 , H01L31/032
CPC分类号： H01L27/14643 , H01L31/0325
摘要： A photoelectric transducer having a photocell includes a compound semiconductor substrate in which a photodiode is doped by an impurity of a conductivity type opposite to that of the substrate. An enclosure region is formed by the same doping impurity as the photodiode, surrounding but spaced apart from the photodiode. A gate electrode is formed on a portion of an insulation layer, the latter formed all over the substrate surface, which extends between the photodiode and the enclosure region. The enclosure region is selectively connected, via a contact hole through the insulation layer and a first switch to ground level. The gate electrode is connected via a second switch to a predetermined voltage having the same polarity as the conductivity type of the substrate. In a high-resolution mode, the first switch is closed and the second switch is open, so that the grounded enclosure region prevents carriers generated in the substrate, between the photodiode and the enclosure region, from flowing into an adjacent cell. In a high-sensitivity mode, the first switch is opened and the second switch is closed, so that the gate voltage generates a channel which electrically connects the photodiode to the enclosure region; thus, the carriers generated within the enclosure are all gathered to the photodiode. The first and second switches may be fabricated on a second semiconductor substrate, arranged parallel to but spaced from the compound semiconductor substrate and electrically connected thereto via bumps.

5. 发明授权

US5376558A Method of fabricating a semiconductor image pickup device 失效
标题翻译：制造半导体图像拾取装置的方法
公开(公告)号：US5376558A
公开(公告)日：1994-12-27
申请号：US041462
申请日：1993-04-02
申请人： Gen Sudo , Soichiro Hikida
发明人： Gen Sudo , Soichiro Hikida
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14623 , H01L27/1465 , H01L27/1469
摘要： A method for fabricating a semiconductor image pickup device for detecting a light image includes a step of forming an array of detector elements, each of which generates an electronic signal in response to light incident thereto, and a step of forming a light absorbing layer which is situated to optically isolate each of the detector elements. The array of detector elements in the light absorbing layer can be formed on a substrate. In one embodiment, the light absorbing layer is produced by forming a first layer contacting with each of the detector elements which has a first refractive index, forming a second layer contacting with the first layer which has a second refractive index greater than the first refractive index of the first layer, and forming a metal layer contacting with the second layer. By forming the light absorbing layer in this manner, the array of detecting elements can be optically isolated from each other so that problems such as cross-talk, for example, can be reduced.
摘要翻译：一种用于制造用于检测光图像的半导体图像拾取装置的方法包括形成检测器元件阵列的步骤，每个检测器元件响应于入射到其中的光产生电子信号，并且形成光吸收层的步骤是位于以光学方式隔离每个检测器元件。光吸收层中的检测器元件的阵列可以形成在基板上。在一个实施例中，光吸收层通过形成与具有第一折射率的每个检测器元件接触的第一层来形成，形成与第一层接触的第二层，第二层具有大于第一折射率的第二折射率并形成与第二层接触的金属层。通过以这种方式形成光吸收层，检测元件的阵列可以彼此光学隔离，从而可以减少例如串扰等问题。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式