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2. 发明申请

US20130230981A1 PATTERN FORMING METHOD 失效
标题翻译：图案形成方法
公开(公告)号：US20130230981A1
公开(公告)日：2013-09-05
申请号：US13597014
申请日：2012-08-28
申请人： Daisuke KAWAMURA
发明人： Daisuke KAWAMURA
IPC分类号： H01L21/768
CPC分类号： H01L21/76838 , H01L21/0272 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L21/76885 , H01L21/76897
摘要： According to one embodiment, a pattern forming method comprises forming, on a metal layer and an insulating layer, an underlying layer the surface state of which is changeable by irradiation with a light ray, radiating the light ray to the underlying layer, thereby changing the surface state of a portion of the underlying layer above the metal layer, forming a block polymer layer on the underlying layer, forming, on the underlying layer, a directed self-assembly phase which contains a first polymer portion and a second polymer portion, the first polymer portion being positioned above the underlying layer portion the surface state of which has been changed by the radiation of the light ray, removing the first polymer portion, and the underlying layer portion underneath the first polymer portion to make a hole, and burying a conductive film into the hole.
摘要翻译：根据一个实施例，图案形成方法包括在金属层和绝缘层上形成其表面状态可以通过用光线照射而变化的下层，将光线照射到下层，从而改变在金属层上方的下层的一部分的表面状态，在下层上形成嵌段聚合物层，在下层上形成包含第一聚合物部分和第二聚合物部分的定向自组装相，第一聚合物部分位于下面的层部分之上，其表面状态已经被光线的辐射改变，去除第一聚合物部分，并且在第一聚合物部分下方形成下面的层部分以形成孔，并且将导电膜进入孔。

3. 发明申请

US20130217217A1 PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND COATING APPARATUS 有权
标题翻译：图案形成方法，半导体器件制造方法和涂层装置
公开(公告)号：US20130217217A1
公开(公告)日：2013-08-22
申请号：US13603902
申请日：2012-09-05
申请人： Katsutoshi Kobayashi , Daisuke Kawamura
发明人： Katsutoshi Kobayashi , Daisuke Kawamura
IPC分类号： H01L21/311 , H01L21/283 , H01L21/31 , B05C11/08
CPC分类号： H01L21/32139 , H01L21/28123 , H01L21/31144 , H01L21/6715 , H01L21/76802
摘要： According to one embodiment, a pattern forming method is disclosed. A resist pattern having a top surface is formed pattern on a substrate. A coating film having a first thickness distribution is formed on the substrate. The coating film covers the resist pattern. The coating film is thinned to expose the top surface of the resist pattern. The first thickness distribution is changed into a second thickness distribution which is more uniform than the first thickness distribution. The resist pattern is removed without removing the coating film. A pattern is formed in the substrate by processing the substrate by using the coating film as a mask.
摘要翻译：根据一个实施例，公开了一种图案形成方法。在基板上形成具有顶面的抗蚀剂图案。在基板上形成具有第一厚度分布的涂膜。涂膜覆盖抗蚀剂图案。使涂膜变薄以暴露抗蚀剂图案的顶表面。第一厚度分布变为比第一厚度分布更均匀的第二厚度分布。去除抗蚀剂图案而不去除涂膜。通过使用涂膜作为掩模来处理基板，在基板中形成图案。

4. 外观设计

USD682842S1 Display panel or screen with a graphical user interface 有权
公开(公告)号：USD682842S1
公开(公告)日：2013-05-21
申请号：US29371310
申请日：2010-12-28
申请人： Tohru Kurata , Wataru Tajika , Masayuki Ebisawa , Goro Takaki , Daisuke Kawamura , Ryuji Nakayama
设计人： Tohru Kurata , Wataru Tajika , Masayuki Ebisawa , Goro Takaki , Daisuke Kawamura , Ryuji Nakayama

5. 发明授权

US08347332B2 Information processing apparatus, information processing method, program, information providing apparatus, information providing method, and information processing system 失效
标题翻译：信息处理装置，信息处理方法，程序，信息提供装置，信息提供方法以及信息处理系统
公开(公告)号：US08347332B2
公开(公告)日：2013-01-01
申请号：US12729757
申请日：2010-03-23
申请人： Kazuhiro Fukuda , Daisuke Kawamura
发明人： Kazuhiro Fukuda , Daisuke Kawamura
IPC分类号： H04H60/33 , H04N7/10 , H04N7/025 , H04N5/445 , G06F3/00 , G06F13/00
CPC分类号： H04N7/173 , G06F3/0482 , H04N5/44543 , H04N7/163 , H04N21/4312 , H04N21/4314 , H04N21/44222 , H04N21/4532 , H04N21/4826 , H04N21/6582
摘要： There is provided a TV set including a content-related information control section which transmits the one or plurality of pieces of viewed content identification information to an ECG server and receives, from the ECG server, content-related information related to content having a relationship with respect to viewed content identified by each of the transmitted one or plurality of pieces of viewed content identification information, and a display control section which causes the display section to display an image based on image data included in each of one or a plurality of pieces of content-related information corresponding to content tuning information the input of which is accepted by an input section from among respective pieces of content-related information that the content-related information control section have received.
摘要翻译：提供了一种电视机，包括内容相关信息控制部分，其将一个或多个观看内容识别信息发送到ECG服务器，并从ECG服务器接收与内容有关的内容相关信息对于被发送的一个或多个观看内容识别信息中的每个所识别的内容的观看内容，以及显示控制部分，其使得显示部分基于包括在一个或多个内容相关信息与内容相关信息控制部分已经接收到的各个内容相关信息中的输入部分接受的内容调谐信息相对应。

6. 发明授权

US07968272B2 Semiconductor device manufacturing method to form resist pattern 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法
公开(公告)号：US07968272B2
公开(公告)日：2011-06-28
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03C5/04
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

7. 发明申请

US20110102755A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND EXPOSURE APPARATUS 审中-公开
标题翻译：制造半导体器件和曝光装置的方法
公开(公告)号：US20110102755A1
公开(公告)日：2011-05-05
申请号：US12938992
申请日：2010-11-03
申请人： Daisuke KAWAMURA
发明人： Daisuke KAWAMURA
IPC分类号： G03B27/42 , H01L21/66
CPC分类号： G03B27/42 , G03F7/70525 , G03F7/70533 , G03F7/70808 , G03F7/7085 , G03F7/70916 , G03F7/70983
摘要： According to embodiments, a substrate coated with a resist film is carried into a first pressure adjustment mechanism. Then, a peripheral atmosphere of the substrate is decompressed from an atmospheric pressure by the first pressure adjustment mechanism to measure a physical quantity correlated with an outgassing amount from the substrate. Then, whether to subject the substrate to an EUV exposure is determined based on a measurement result of the physical quantity. If determined not to subject the substrate to the EUV exposure, the substrate is transported into a second pressure adjustment mechanism without the substrate being subjected to the EUV exposure. Then, the substrate is carried out of the second pressure adjustment mechanism.
摘要翻译：根据实施例，涂覆有抗蚀剂膜的基板被携带到第一压力调节机构中。然后，通过第一压力调节机构从大气压对基板的周边气氛进行减压，以测量与从基板排气量相关的物理量。然后，基于物理量的测定结果确定是否使基板进行EUV曝光。如果确定不使基板受到EUV曝光，则将基板输送到第二压力调节机构中，而不会使基板经受EUV曝光。然后，由第二压力调节机构进行基板。

8. 发明授权

US07749665B2 Method of generating writing pattern, method of forming resist pattern, method of controlling exposure tool, and method of manufacturing semiconductor device 失效
标题翻译：产生书写图案的方法，形成抗蚀剂图案的方法，控制曝光工具的方法以及制造半导体器件的方法
公开(公告)号：US07749665B2
公开(公告)日：2010-07-06
申请号：US11108751
申请日：2005-04-19
申请人： Daisuke Kawamura , Shinichi Ito
发明人： Daisuke Kawamura , Shinichi Ito
IPC分类号： G03F9/00
CPC分类号： G03F7/70616 , G03F7/70341 , G03F7/70433 , G03F7/70441
摘要： A method of generating a writing pattern is disclosed, which generates, from pattern data, writing pattern data to write a mask pattern in a photomask used in an exposure tool comprising a projection optical system to transfer the mask pattern to a resist film formed on a substrate, an immersion mechanism which forms a liquid film in a local region, and a movement mechanism which moves the substrate with respect to the projection optical system and the immersion mechanism, the method comprising obtaining a typical distribution of contact history values between the resist film and the liquid film in the unit exposure region, dividing a pattern which corresponds to the pattern data into a plurality of regions according to the typical distribution of the contact history values, and carrying out correction of a pattern included in each of the divided regions under a rule according to the contact history values.
摘要翻译：公开了一种生成写入图案的方法，其从图案数据生成写入图案数据以将掩模图案写入用于包括投影光学系统的曝光工具中的光掩模中，以将掩模图案转印到形成在基板，在局部区域形成液膜的浸渍机构，以及相对于投影光学系统和浸渍机构移动基板的移动机构，所述方法包括获得抗蚀剂膜之间的接触历史值的典型分布和单位曝光区域中的液膜，根据接触历史值的典型分布将与图案数据对应的图案分割成多个区域，并对包含在每个分割区域内的图案进行校正根据联系历史值的规则。

9. 发明申请

US20100099036A1 Pattern forming method and method of manufacturing semiconductor device 审中-公开
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20100099036A1
公开(公告)日：2010-04-22
申请号：US12654295
申请日：2009-12-16
申请人： Daisuke Kawamura , Shinichi Ito
发明人： Daisuke Kawamura , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/11 , G03F7/70341 , G03F7/7065 , G03F7/70958 , Y10S430/162
摘要： A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film.
摘要翻译：图案形成方法包括在基板上形成抗蚀剂膜，在抗蚀剂膜上形成覆盖膜的涂布溶液涂布抗蚀膜，在抗蚀剂膜上形成覆盖膜，通过浸渍将图案转印到抗蚀剂膜上使用液浸液体在抗蚀剂膜上形成潜像的光刻方法，在形成潜像后去除覆盖膜，进行第一次检查以检查覆盖膜在形成潜像之间是否存在缺陷并且在所述第一检查中发现所述缺陷时，移除所述覆盖膜，执行预定处理，以及在除去所述覆盖膜之后，在所述基板上显影所述抗蚀剂膜以形成抗蚀剂图案。

10. 发明授权

US07687227B2 Resist pattern forming method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的抗蚀图案形成方法和制造方法
公开(公告)号：US07687227B2
公开(公告)日：2010-03-30
申请号：US11316898
申请日：2005-12-27
申请人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
发明人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/2041
摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.
摘要翻译：根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

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