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1. 发明申请

US20130078570A1 METHOD OF FORMING PATTERN AND LAMINATE 有权
公开(公告)号：US20130078570A1
公开(公告)日：2013-03-28
申请号：US13626415
申请日：2012-09-25
申请人： Atsushi HIENO , Shigeki HATTORI , Hiroko NAKAMURA , Satoshi MIKOSHIBA , Koji ASAKAWA , Masahiro KANNO , Yuriko SEINO , Tsukasa AZUMA
发明人： Atsushi HIENO , Shigeki HATTORI , Hiroko NAKAMURA , Satoshi MIKOSHIBA , Koji ASAKAWA , Masahiro KANNO , Yuriko SEINO , Tsukasa AZUMA
IPC分类号： G03F7/20 , G03F7/004 , B32B7/04 , B82Y30/00
CPC分类号： G03F7/40 , B32B7/04 , B32B2307/40 , B82Y30/00 , G03F7/0002 , G03F7/004 , G03F7/0751 , G03F7/0752 , G03F7/11 , G03F7/165 , G03F7/20
摘要： According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

2. 发明申请

US20120241713A1 ORGANIC MOLECULAR MEMORY 有权
标题翻译：有机分子记忆
公开(公告)号：US20120241713A1
公开(公告)日：2012-09-27
申请号：US13425796
申请日：2012-03-21
申请人： Hideyuki NISHIZAWA , Reiko YOSHIMURA , Tsukasa TADA , Shigeki HATTORI , Masaya TERAI , Satoshi MIKOSHIBA , Koji ASAKAWA
发明人： Hideyuki NISHIZAWA , Reiko YOSHIMURA , Tsukasa TADA , Shigeki HATTORI , Masaya TERAI , Satoshi MIKOSHIBA , Koji ASAKAWA
IPC分类号： H01L51/10 , H01L29/792
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/53 , H01L45/1233 , H01L45/1253 , H01L51/0078 , H01L51/0092 , H01L51/0098 , H01L51/0595
摘要： An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.
摘要翻译：实施方案的有机分子存储器包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机分子层，有机分子层包括电荷储存分子链或可变电阻分子链，电荷储存分子链或可变阻力分子链，包括稠合多环基团。

3. 发明申请

US20120244474A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20120244474A1
公开(公告)日：2012-09-27
申请号：US13430185
申请日：2012-03-26
申请人： Koji ASAKAWA , Shigeki Hattori , Ryota Kitagawa
发明人： Koji ASAKAWA , Shigeki Hattori , Ryota Kitagawa
IPC分类号： G03F7/20
CPC分类号： G03F7/16 , B81C1/00031 , B81C2201/0149 , G03F7/0392
摘要： According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an α-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.
摘要翻译：根据一个实施方案，形成图案的方法包括将嵌段共聚物施加到基材上，所述嵌段共聚物包括第一嵌段和第二嵌段，所述第一嵌段包括聚丙烯酸酯或聚甲基丙烯酸酯，所述侧链具有脂环族烃基或导入包含叔碳的烃基，第二嵌段包括在α-位被烃或卤素取代的聚苯乙烯，使嵌段共聚物相分离，用能量束照射嵌段共聚物以分解第二嵌段并且用显影剂移除第二块以形成第一块的图案。

4. 发明申请

US20120037595A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN 有权
标题翻译：制造多孔结构的方法和形成图案的方法
公开(公告)号：US20120037595A1
公开(公告)日：2012-02-16
申请号：US13278862
申请日：2011-10-21
申请人： Koji ASAKAWA , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
发明人： Koji ASAKAWA , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
IPC分类号： C23F1/02
CPC分类号： C08J9/26 , B82Y10/00 , B82Y30/00 , C03C17/007 , C03C2217/425 , C03C2217/479 , C03C2218/33 , C08J2333/12 , C08J2383/16 , C23F1/30 , G03F7/0002 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0029 , H01G11/30 , H01G11/56 , H01J9/02 , H01J9/025 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/0337 , H01L21/31695 , H01M2/145 , H01M2/1653 , H01M4/131 , H01M4/133 , H01M4/8605 , H01M4/96 , H01M8/0234 , H01M8/0245 , H01M8/026 , H01M8/1011 , H01M10/0525 , Y02E60/13 , Y02E60/523 , Y02P70/56 , Y10S438/945 , Y10S438/947 , Y10S977/90 , Y10T428/24149
摘要： A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc-No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
摘要翻译：图案形成材料含有嵌段共聚物或接枝共聚物，并形成具有微聚合物相的结构，其中，关于构成嵌段共聚物或接枝共聚物的聚合物链中的至少两个聚合物链，N /（Nc- 否）构成各聚合物链的单体单元的值为1.4以上，其中N表示单体单元中的总原子数，Nc表示单体单元中的碳原子数，No表示单体单元中的氧原子数。

5. 发明申请

US20120223348A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120223348A1
公开(公告)日：2012-09-06
申请号：US13221319
申请日：2011-08-30
申请人： Kumi MASUNAGA , Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Takanobu KAMAKURA , Shinji NUNOTANI
发明人： Kumi MASUNAGA , Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Takanobu KAMAKURA , Shinji NUNOTANI
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

6. 发明申请

US20100220757A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF 审中-公开
标题翻译：半导体发光元件及其生产工艺
公开(公告)号：US20100220757A1
公开(公告)日：2010-09-02
申请号：US12717750
申请日：2010-03-04
申请人： Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA
发明人： Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA
IPC分类号： H01S5/02 , H01L33/10 , H01L33/00 , H01L33/44
CPC分类号： H01L33/22 , H01L33/005 , H01S5/187
摘要： One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a sealing resin, and it also provides a process for production thereof. This element comprises a semiconductor multilayered film and a light-extraction surface. In the multilayered film, plural semiconductor layers and an active layer are stacked. The light-extraction surface is provided on the multilayered film, and plural micro-projections are formed thereon. These micro-projections have flat top faces parallel to the multilayered film, and they can be formed by an etching process. The etching process is performed by use of a dot pattern as a mask, and the dot pattern is formed by phase separation of a block copolymer.
摘要翻译：本发明的一个实施方案提供了一种半导体发光元件，其具有高的光提取效率和光提取表面与密封树脂之间的优异粘附性，并且还提供了其生产方法。该元件包括半导体多层膜和光提取表面。在多层膜中堆叠多个半导体层和有源层。在多层膜上设置光提取面，在其上形成有多个微突起。这些微型突起具有与多层膜平行的平坦顶面，并且它们可以通过蚀刻工艺形成。通过使用点阵图案作为掩模进行蚀刻处理，并且通过嵌段共聚物的相分离形成点图案。

7. 发明申请

US20130081683A1 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：光电转换元件及其制造方法
公开(公告)号：US20130081683A1
公开(公告)日：2013-04-04
申请号：US13628738
申请日：2012-09-27
申请人： Kumi MASUNAGA , Akira FUJIMOTO , Eishi TSUTSUMI , Koji ASAKAWA , Tsutomu NAKANISHI , Hideyuki NISHIZAWA , Ryota KITAGAWA
发明人： Kumi MASUNAGA , Akira FUJIMOTO , Eishi TSUTSUMI , Koji ASAKAWA , Tsutomu NAKANISHI , Hideyuki NISHIZAWA , Ryota KITAGAWA
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/06 , H01L31/03529 , H01L31/0384 , H01L31/073 , H01L31/0735 , H01L31/18 , Y02E10/543 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.
摘要翻译：本发明提供一种通过使用增强的电场在传播载流子激发中具有高效率的光电转换元件。光电转换元件包括光电转换层，该光电转换层包括放置在两个电极层之间的两个或多个层叠半导体层，其特征在于，在光电转换层中的半导体层之间具有电场增强层。电场增强层设置有金属微细结构，微细结构例如为多孔膜或一组纳米物体，例如非常小的球体。

8. 发明申请

US20130075778A1 LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE 有权
标题翻译：光发射金属电极，电子装置和发光装置
公开(公告)号：US20130075778A1
公开(公告)日：2013-03-28
申请号：US13407291
申请日：2012-02-28
申请人： Tsutomu NAKANISHI , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Koji ASAKAWA , Shinji NUNOTANI , Takanobu KAMAKURA
发明人： Tsutomu NAKANISHI , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Koji ASAKAWA , Shinji NUNOTANI , Takanobu KAMAKURA
IPC分类号： H01L33/40 , H01B5/00 , B82Y99/00
CPC分类号： B82Y20/00 , B82Y40/00 , H01L33/42 , H01L51/5209
摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.
摘要翻译：根据一个实施例，透光金属电极包括金属层。金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

9. 发明申请

US20130063095A1 POWER SUPPLY DEVICE 有权
标题翻译：电源设备
公开(公告)号：US20130063095A1
公开(公告)日：2013-03-14
申请号：US13560108
申请日：2012-07-27
申请人： Kazunori WATANABE , Koji ASAKAWA
发明人： Kazunori WATANABE , Koji ASAKAWA
IPC分类号： H02J7/00
CPC分类号： H02J7/0078 , H02J7/0081 , H02J7/044 , H02J7/045
摘要： Provided is a power supply device integrally combined with an electrical device body including a motor, comprising a rechargeable battery for supplying power to the motor, a microcomputer for detecting a residual capacity and a battery voltage of the battery, and a switching element provided between the battery and the microcomputer. The microcomputer stops charging the battery when the detected residual capacity has become 100%, and when the detected value of the battery voltage has become lower than a peak value after the value of the battery voltage passes the peak value, making it possible to prevent overcharging of the battery. The microcomputer also controls to turn off the switching element to stop the power supply from the battery to the microcomputer when the residual capacity becomes less than a predetermined threshold value, making it possible to reduce power consumption.
摘要翻译：提供了一种与包括电动机的电气设备主体整体组合的电源装置，包括用于向电动机供电的可再充电电池，用于检测电池的剩余容量和电池电压的微型计算机，以及设置在电动机之间的开关元件电池和微电脑。当检测到的剩余容量变为100％时，微型计算机停止对电池充电，并且当电池电压的检测值变得低于电池电压值通过峰值后的峰值时，可以防止过充电的电池。当剩余容量小于预定阈值时，微型计算机还控制关闭开关元件以停止从电池向微型计算机供电，从而可以降低功耗。

10. 发明申请

US20120056222A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056222A1
公开(公告)日：2012-03-08
申请号：US13037914
申请日：2011-03-01
申请人： Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Eishi TSUTSUMI , Takanobu KAMAKURA , Shinji NUNOTANI , Masaaki OGAWA
发明人： Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Eishi TSUTSUMI , Takanobu KAMAKURA , Shinji NUNOTANI , Masaaki OGAWA
IPC分类号： H01L33/58 , H01L33/38 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.
摘要翻译：一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。发光层位于第一半导体层和第二半导体层之间。第一电极层位于与第一半导体层相对的第二半导体层的一侧。第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。金属部分接触第二半导体层。沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

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