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21. 发明授权

US6159644A Method of fabricating semiconductor circuit devices utilizing multiple exposures 失效
公开(公告)号：US6159644A
公开(公告)日：2000-12-12
申请号：US142077
申请日：1998-09-01
申请人： Hidetoshi Satoh , Yoshinori Nakayama , Masahide Okumura , Hiroya Ohta , Norio Saitou
发明人： Hidetoshi Satoh , Yoshinori Nakayama , Masahide Okumura , Hiroya Ohta , Norio Saitou
IPC分类号： G03F7/20 , H01J37/304 , G03F9/00
CPC分类号： G03F7/70616 , G03F7/70433 , G03F7/70458 , G03F7/70633 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.

22. 发明授权

US5162240A Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate 失效
标题翻译：在厚膜和薄膜混合多层布线基板上制作电路图案的方法和装置
公开(公告)号：US5162240A
公开(公告)日：1992-11-10
申请号：US537492
申请日：1990-06-12
申请人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
发明人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
IPC分类号： H01L21/48 , H01L23/538 , H01L23/544 , H05K1/02 , H05K1/03 , H05K1/09 , H05K3/46
CPC分类号： H05K3/4679 , H01L21/4857 , H01L23/5383 , H01L23/544 , H01L2223/5442 , H01L2223/54473 , H01L2224/16 , H01L2224/16235 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15174 , H05K1/0269 , H05K1/0306 , H05K1/092 , H05K2201/09781 , H05K2201/09918 , H05K3/4605 , H05K3/467
摘要： A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.
摘要翻译：厚薄膜混合多层布线基板包括设置在厚膜电路和薄膜电路之间的调整层，以便调整厚膜电路和薄膜电路的位置，具有高集成度和大面积的厚薄薄膜混合基板。根据厚膜电路基板的形状的分散，使用直接印刷法形成调整层，以吸收基板的分散。此外，为了吸收由于烧结引起的厚膜基板的收缩分散，通过电子束检测设置在基板上的标记的位置，然后形成连接图案以连接到规则图案。

23. 发明授权

US4489241A Exposure method with electron beam exposure apparatus 失效
标题翻译：电子束曝光装置曝光方法
公开(公告)号：US4489241A
公开(公告)日：1984-12-18
申请号：US386579
申请日：1982-06-09
申请人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
发明人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
IPC分类号： H01J37/304 , H01L21/027 , H01L21/30 , H01L23/544 , H01J37/317
CPC分类号： H01L23/544 , H01J37/3045 , H01L21/0277 , H01L21/30 , H01L2223/54453 , H01L2924/0002
摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate having thereon a number of chips are divided into blocks, which each contain a plurality of chips. Marks are provided on each of the blocks, the positions of the marks are detected and the writing exposure positions of the chips within each block are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
摘要翻译：具有电子束曝光装置的曝光方法，其中电子束被发射到诸如其上涂覆有电子束敏感抗蚀剂的硅晶片的基板上，从而直接形成或书写图案。其上具有多个芯片的基板被分成块，每个块包含多个芯片。在每个块上提供标记，检测标记的位置，并且基于检测结果修改每个块内的码片的写入曝光位置。根据本发明，可以高精度地进行有效的写入曝光。

24. 发明授权

US4445040A Shaping aperture for a charged particle forming system 失效
标题翻译：成型带孔成粒系统
公开(公告)号：US4445040A
公开(公告)日：1984-04-24
申请号：US514352
申请日：1983-07-18
申请人： Teruo Iwasaki , Norio Saitou , Akira Yanagisawa
发明人： Teruo Iwasaki , Norio Saitou , Akira Yanagisawa
IPC分类号： H01J37/09 , H01L21/027 , A61K27/02
CPC分类号： H01J37/09
摘要： A shaping aperture used in a charged particle forming system and provided with a slit for shaping the cross section of a charged beam emitted is disclosed in which at least two thin plates each provided with a through-hole for passing the charged particle beam therethrough are piled so as to form a shaping slit of a desired form by the through-holes.
摘要翻译：公开了一种用于带电粒子形成系统并且设置有用于使发射的带电束的横截面成形的狭缝的成形孔，其中至少两个薄板均设有用于使带电粒子束穿过的通孔堆叠以便通过通孔形成所需形状的成形狭缝。

25. 发明授权

US06768118B2 Electron beam monitoring sensor and electron beam monitoring method 有权
标题翻译：电子束监测传感器和电子束监测方法
公开(公告)号：US06768118B2
公开(公告)日：2004-07-27
申请号：US10350188
申请日：2003-01-24
申请人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
发明人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
IPC分类号： H01J326
CPC分类号： H01J37/244 , H01J2237/24405 , H01J2237/31774
摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.
摘要翻译：本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

26. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

27. 发明授权

US4943729A Electron beam lithography system 失效
标题翻译：电子束光刻系统
公开(公告)号：US4943729A
公开(公告)日：1990-07-24
申请号：US284733
申请日：1988-12-15
申请人： Kimiaki Ando , Mitsuo Ooyama , Norio Saitou
发明人： Kimiaki Ando , Mitsuo Ooyama , Norio Saitou
IPC分类号： H01J37/302
CPC分类号： H01J37/3026
摘要： An electron beam lithography system having a contour resolving circuit for resolving original pattern data which is transferred from a host computer into contour portion pattern data and inner portion pattern data in accordance with the designated dimension, for adding flag data to enable the contour portion pattern data and the inner portion pattern data to be discriminated to the resolved pattern data, and for outputting the resolved pattern data with the flag data. By adding the flag data, the contour portion pattern data and inner portion pattern data can be easily discriminated. The operation to change the electron beam irradiation dose in accordance with the contour portion pattern and inner portion pattern can be fairly easily executed. A pattern can be drawn at a high accuracy while preventing a deformation of the drawn figure due to the proximity effect. A data processing amount in the computer can be reduced. A data transfer amount from the host computer can be also reduced. Thus, an electron beam lithography system having a high throughput can be realized.
摘要翻译：一种具有轮廓分解电路的电子束光刻系统，用于根据所指定的尺寸，将从主计算机传送到轮廓部分图形数据和内部部分图形数据的原始图案数据解析，以便添加标志数据以使轮廓部分图形数据以及要被区分为分辨图案数据的内部部分图案数据，并且用于使用标志数据输出分辨的图案数据。通过添加标志数据，可以容易地区分轮廓部分图形数据和内部部分图案数据。可以相当容易地执行根据轮廓部分图形和内部部分图案改变电子束照射剂量的操作。可以以高精度绘制图案，同时防止由于邻近效应引起的绘制图形的变形。可以减少计算机中的数据处理量。也可以减少来自主机的数据传送量。因此，可以实现具有高通量的电子束光刻系统。

28. 发明授权

US4740698A Hybrid charged particle apparatus 失效
标题翻译：混合带电粒子装置
公开(公告)号：US4740698A
公开(公告)日：1988-04-26
申请号：US30474
申请日：1987-03-26
申请人： Hifumi Tamura , Norio Saitou , Kaoru Umemura
发明人： Hifumi Tamura , Norio Saitou , Kaoru Umemura
IPC分类号： H01J37/08 , H01J37/10 , H01J37/147 , H01J37/28 , H01J37/26
CPC分类号： H01J37/28
摘要： A hybrid charged particle apparatus includes a charged particle source which is made up of a field-emission electron source for emitting an electron beam, a liquid-metal ion source for emitting an ion beam, and changeover means for replacing one of the electron and ion sources by the other at a predetermined place without varying a vacuum state, hybrid focusing/deflecting means for focusing and deflecting each of the electron beam and the ion beam electrostatically and electromagnetically to irradiate a specimen with each of the electron beam and the ion beam, and image observing means for detecting secondary charged particles emitted from the specimen and for observing an image of a specimen surface formed by the secondary charged particles.
摘要翻译：混合带电粒子装置包括由用于发射电子束的场发射电子源组成的带电粒子源，用于发射离子束的液体 - 金属离子源和用于替换电子和离子之一的转换装置源于另一个在不改变真空状态的预定位置的混合聚焦/偏转装置，用于静电和电磁地聚焦和偏转每个电子束和离子束，以用电子束和离子束中的每一个照射样本，以及图像观察装置，用于检测从试样发射的二次带电粒子并观察由二次带电粒子形成的试样表面的图像。

29. 发明授权

US4692579A Electron beam lithography apparatus 失效
标题翻译：电子束光刻设备
公开(公告)号：US4692579A
公开(公告)日：1987-09-08
申请号：US735184
申请日：1985-05-17
申请人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
发明人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30488 , H01J2237/31764
摘要： An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.
摘要翻译：电子束光刻设备包括：点电子束发生器; 使用点光束将期望图案曝光到晶片上的装置; 用于将图案分割成小区域的装置; 以及用于指定小区域的原点的装置，并且还通过使用点光束以固定的校正量对小区域内的部分进行数字扫描，从而减少D / A转换器与数字的相关的建立时间扫描。

30. 发明授权

US4396901A Method for correcting deflection distortion in an apparatus for charged particle lithography 失效
标题翻译：用于校正带电粒子光刻装置中的偏转变形的方法
公开(公告)号：US4396901A
公开(公告)日：1983-08-02
申请号：US227940
申请日：1981-01-23
申请人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
发明人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
IPC分类号： H01L21/027 , H01J37/304 , H01J29/70 , G06K7/10
CPC分类号： H01J37/304
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.
摘要翻译：在用于校正通过扫描样品上的图案的装置中产生的偏转失真的方法中，通过扫描带电粒子束而产生的偏转变形的校正根据待部分的高度（变形）基于在通过扫描带电粒子束在具有至少两个具有不等高度的参考水平的标记上获得的标记的各个参考水平处的偏转失真的校正幅度的样本（例如，晶片）上线性化沿光轴的方向。

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