专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4692579A Electron beam lithography apparatus 失效
标题翻译：电子束光刻设备
公开(公告)号：US4692579A
公开(公告)日：1987-09-08
申请号：US735184
申请日：1985-05-17
申请人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
发明人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30488 , H01J2237/31764
摘要： An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.
摘要翻译：电子束光刻设备包括：点电子束发生器; 使用点光束将期望图案曝光到晶片上的装置; 用于将图案分割成小区域的装置; 以及用于指定小区域的原点的装置，并且还通过使用点光束以固定的校正量对小区域内的部分进行数字扫描，从而减少D / A转换器与数字的相关的建立时间扫描。

2. 发明授权

US4829444A Charged particle beam lithography system 失效
标题翻译：带电粒子束光刻系统
公开(公告)号：US4829444A
公开(公告)日：1989-05-09
申请号：US922891
申请日：1986-10-24
申请人： Norio Saitou , Masahide Okumura , Tsutomu Komoda , Mitsuo Ooyama
发明人： Norio Saitou , Masahide Okumura , Tsutomu Komoda , Mitsuo Ooyama
IPC分类号： H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177
摘要： A charged particle beam lithography system has a high-throughput and inexpensive system configuration. The system configuration is constituted by a plurality of charged particle optical systems each adapted to focus and deflect a beam of charged particles and irradiate the beam onto a specimen so that the beam draws a desired pattern on the specimen, a plurality of deflection distortion correcting circuits each associated with each of the charged particle optical systems for correcting a deflection distortion of each charged particle optical system, and a common pattern data control circuit for supplying data of a pattern to be drawn to each of the plurality of deflection distortion correcting circuits.
摘要翻译：带电粒子束光刻系统具有高通量和廉价的系统配置。系统配置由多个带电粒子光学系统构成，每个充电粒子光学系统适于聚焦和偏转带电粒子束并将光束照射到样本上，使得光束在样本上画出期望的图案，多个偏转失真校正电路每个与用于校正每个带电粒子光学系统的偏转失真的带电粒子光学系统相关联的每个带电粒子光学系统以及用于向多个偏转失真校正电路中的每一个提供要绘制的图案的数据的公共图案数据控制电路。

3. 发明授权

US4820928A Lithography apparatus 失效
标题翻译：平版印刷设备
公开(公告)号：US4820928A
公开(公告)日：1989-04-11
申请号：US106499
申请日：1987-10-09
申请人： Mitsuo Ooyama , Kimiaki Ando , Yoshio Kawamura , Norio Saitou , Takanori Simura , Hiroyuki Kohida
发明人： Mitsuo Ooyama , Kimiaki Ando , Yoshio Kawamura , Norio Saitou , Takanori Simura , Hiroyuki Kohida
IPC分类号： G02B5/18 , H01J37/302 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/302 , H01J37/3174 , H01J2237/31762
摘要： A lithography apparatus in which a charged particle ray such as an electron beam or an ion beam is controlled to scan a desired region of a sample and thereby draw a pattern, including a framing pattern memory for storing therein closed framing lines of a pattern to be drawn in the form of dot images, a framing pattern generator for writing the framing lines of the pattern to be drawn into said framing pattern memory in the form of dot images, and a raster scanning circuit for scanning the framing pattern memory having stored therein closed framing lines of the pattern to be drawn and for generating a beam deflection address for drawing the pattern and a beam blanking control signal.
摘要翻译：其中控制诸如电子束或离子束的带电粒子扫描样品的期望区域并由此绘制图案的光刻设备，包括用于存储图案的闭合框线的框架图案存储器以点图像的形式绘制的帧图案生成器，用于以点图像的形式将要绘制的图案的成帧线写入所述成帧图案存储器的成像模式生成器，以及用于扫描已存储在其中的成帧模式存储器的光栅扫描电路闭合要绘制的图案的成帧线和用于产生用于绘制图案的光束偏转地址和光束消隐控制信号。

4. 发明授权

US4577111A Apparatus for electron beam lithography 失效
标题翻译：电子束光刻设备
公开(公告)号：US4577111A
公开(公告)日：1986-03-18
申请号：US516091
申请日：1983-07-22
申请人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
发明人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
IPC分类号： G03F7/20 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/30 , H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3174 , H01L21/30 , H01J2237/1505 , H01J2237/152 , H01J2237/30472 , H01J2237/31776
摘要： An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.
摘要翻译：用于电子束光刻的装置包括至少一个掩模，其配备有要经受来自电子束发生器的电子束的多边形孔，用于对掩模的多边形孔径进行缩小和成像的电子透镜系统和用于电子的螺线管线圈光束旋转调节放置在掩模和终末电子透镜之间。

5. 发明授权

US4443703A Method and apparatus of deflection calibration for a charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置的偏转校准方法和装置
公开(公告)号：US4443703A
公开(公告)日：1984-04-17
申请号：US347719
申请日：1982-02-10
申请人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
发明人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
IPC分类号： H01J37/147 , H01J37/153 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/147 , H01J37/304
摘要： A method and apparatus of deflection calibration for a charged particle beam exposure apparatus having an electromagnetic deflector and an electrostatic deflector both for deflecting a charged particle beam and a movable stage structure. The electromagnetic deflector is previously subjected to a calibration operation known per se. With a fiducial mark positioned in a predetermined location, the beam is deflected by the calibrated electromagnetic deflector instead of moving the stage structure, the beam is then deflected by the electrostatic deflector to detect the location of the fiducial mark, and deflection data are measured of the electrostatic deflection for the detection of the location of the fiducial mark. According to the present invention the calibration is performed in a short time without causing degradation of the precision of, e.g., lithography due to heat generated by movement of the stage structure.
摘要翻译：一种具有用于偏转带电粒子束和可移动平台结构的电磁偏转器和静电偏转器的带电粒子束曝光装置的偏转校准方法和装置。电磁偏转器预先经过本身已知的校准操作。将基准标记定位在预定位置时，光束被校准的电磁偏转器偏转，而不是移动平台结构，然后光束被静电偏转器偏转以检测基准标记的位置，并且测量偏转数据用于检测静电偏转的位置的基准标记。根据本发明，在短时间内执行校准，而不会导致由于台架结构的移动产生的热量导致的光刻的精度的降低。

6. 发明授权

US4943729A Electron beam lithography system 失效
标题翻译：电子束光刻系统
公开(公告)号：US4943729A
公开(公告)日：1990-07-24
申请号：US284733
申请日：1988-12-15
申请人： Kimiaki Ando , Mitsuo Ooyama , Norio Saitou
发明人： Kimiaki Ando , Mitsuo Ooyama , Norio Saitou
IPC分类号： H01J37/302
CPC分类号： H01J37/3026
摘要： An electron beam lithography system having a contour resolving circuit for resolving original pattern data which is transferred from a host computer into contour portion pattern data and inner portion pattern data in accordance with the designated dimension, for adding flag data to enable the contour portion pattern data and the inner portion pattern data to be discriminated to the resolved pattern data, and for outputting the resolved pattern data with the flag data. By adding the flag data, the contour portion pattern data and inner portion pattern data can be easily discriminated. The operation to change the electron beam irradiation dose in accordance with the contour portion pattern and inner portion pattern can be fairly easily executed. A pattern can be drawn at a high accuracy while preventing a deformation of the drawn figure due to the proximity effect. A data processing amount in the computer can be reduced. A data transfer amount from the host computer can be also reduced. Thus, an electron beam lithography system having a high throughput can be realized.
摘要翻译：一种具有轮廓分解电路的电子束光刻系统，用于根据所指定的尺寸，将从主计算机传送到轮廓部分图形数据和内部部分图形数据的原始图案数据解析，以便添加标志数据以使轮廓部分图形数据以及要被区分为分辨图案数据的内部部分图案数据，并且用于使用标志数据输出分辨的图案数据。通过添加标志数据，可以容易地区分轮廓部分图形数据和内部部分图案数据。可以相当容易地执行根据轮廓部分图形和内部部分图案改变电子束照射剂量的操作。可以以高精度绘制图案，同时防止由于邻近效应引起的绘制图形的变形。可以减少计算机中的数据处理量。也可以减少来自主机的数据传送量。因此，可以实现具有高通量的电子束光刻系统。

7. 发明授权

US4489241A Exposure method with electron beam exposure apparatus 失效
标题翻译：电子束曝光装置曝光方法
公开(公告)号：US4489241A
公开(公告)日：1984-12-18
申请号：US386579
申请日：1982-06-09
申请人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
发明人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
IPC分类号： H01J37/304 , H01L21/027 , H01L21/30 , H01L23/544 , H01J37/317
CPC分类号： H01L23/544 , H01J37/3045 , H01L21/0277 , H01L21/30 , H01L2223/54453 , H01L2924/0002
摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate having thereon a number of chips are divided into blocks, which each contain a plurality of chips. Marks are provided on each of the blocks, the positions of the marks are detected and the writing exposure positions of the chips within each block are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
摘要翻译：具有电子束曝光装置的曝光方法，其中电子束被发射到诸如其上涂覆有电子束敏感抗蚀剂的硅晶片的基板上，从而直接形成或书写图案。其上具有多个芯片的基板被分成块，每个块包含多个芯片。在每个块上提供标记，检测标记的位置，并且基于检测结果修改每个块内的码片的写入曝光位置。根据本发明，可以高精度地进行有效的写入曝光。

8. 发明授权

US4396901A Method for correcting deflection distortion in an apparatus for charged particle lithography 失效
标题翻译：用于校正带电粒子光刻装置中的偏转变形的方法
公开(公告)号：US4396901A
公开(公告)日：1983-08-02
申请号：US227940
申请日：1981-01-23
申请人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
发明人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
IPC分类号： H01L21/027 , H01J37/304 , H01J29/70 , G06K7/10
CPC分类号： H01J37/304
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.
摘要翻译：在用于校正通过扫描样品上的图案的装置中产生的偏转失真的方法中，通过扫描带电粒子束而产生的偏转变形的校正根据待部分的高度（变形）基于在通过扫描带电粒子束在具有至少两个具有不等高度的参考水平的标记上获得的标记的各个参考水平处的偏转失真的校正幅度的样本（例如，晶片）上线性化沿光轴的方向。

9. 发明授权

US4701620A Electron beam exposure apparatus 失效
标题翻译：电子束曝光装置
公开(公告)号：US4701620A
公开(公告)日：1987-10-20
申请号：US893180
申请日：1986-08-05
申请人： Masahide Okumura , Takashi Matsuzaka , Genya Matsuoka , Norio Saitou
发明人： Masahide Okumura , Takashi Matsuzaka , Genya Matsuoka , Norio Saitou
IPC分类号： H01L21/30 , H01J37/141 , H01J37/153 , H01J37/21 , H01J37/304 , H01L21/027 , G21K1/093 , H01J37/07
CPC分类号： H01J37/153 , H01J37/304
摘要： Disclosed is an electron beam exposure apparatus which includes an objective lens focusing an electron beam, and a dynamic focus correction lens dynamically correcting the focusing by the objective lens. The apparatus comprises a control circuit which, in order to prevent a current variation induced in the objective lens by the dynamic focus correction lens, controls current supplied to the objective lens so as to cancel the current variation induced in the objective lens due to the coil current of the dynamic focus correction lens.
摘要翻译：公开了一种电子束曝光装置，其包括聚焦电子束的物镜和动态校正透镜，动态校正物镜的聚焦。该装置包括一个控制电路，为了防止物镜由动态聚焦校正透镜引起的电流变化，控制提供给物镜的电流，以消除由于线圈而引起的物镜中的电流变化电流的动态聚焦校正镜头。

10. 发明授权

US5650631A Electron beam writing system 失效
标题翻译：电子束写入系统
公开(公告)号：US5650631A
公开(公告)日：1997-07-22
申请号：US470592
申请日：1995-06-07
申请人： Yasunari Sohda , Masahide Okumura , Yasuhiro Someda , Hidetoshi Satoh , Yoshinori Nakayama , Norio Saitou
发明人： Yasunari Sohda , Masahide Okumura , Yasuhiro Someda , Hidetoshi Satoh , Yoshinori Nakayama , Norio Saitou
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/147 , H01J37/305 , H01L21/027 , H01J37/30
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J2237/0435 , H01J2237/31774 , H01J2237/31776
摘要： A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.
摘要翻译：消隐阵列用于控制电子束写入系统中的电子束。阵列中的电极平行地形成，并且彼此正交的两组平行电极被用于将电子束分成多个单独的曝光区域。这些平行电极组可以通过丝网形成一个阵列，或者可以在不同的焦点位置处彼此间隔开或更远的两个分离的阵列中形成。电极被设置成延伸穿过诸如正方形或三角形孔的孔。对于三角形孔，电极与三角形的斜边平行。通过组合曝光区域形成书写图案。通过对相邻的电极施加相反极性的电压来实现对每个曝光区域的控制，以便偏转通过相邻电极的光束的部分。偏转的光束部分被允许非偏转的电子束部分通过以形成待写入的图案的下游孔阻挡。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式