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1. 发明授权

US4699870A Patterning method 失效
标题翻译：图案化方法
公开(公告)号：US4699870A
公开(公告)日：1987-10-13
申请号：US847907
申请日：1986-03-19
申请人： Kazumi Iwadate , Katsuhiro Harada
发明人： Kazumi Iwadate , Katsuhiro Harada
IPC分类号： G03F7/039 , G03C5/00
CPC分类号： G03F7/039 , Y10S430/143 , Y10S430/168
摘要： In a fine pattern forming method for use in the manufacture of semiconductor integrated circuits, optical integrated circuits, Josephson elements, and so forth, a positive resist mixture is used which is composed of a resist having a carboxyl group in the side chain and an additive which is an oxide, halide, or organic acid salt of a bivalent metal and which, when heated, forms Ionomer to produce thermal crosslinks. The positive resist mixture is developed using a developer having carboxylic acid mixed in an organic solvent, thereby permitting the formation of an ultra-fine and high precision pattern.
摘要翻译： PCT No.PCT / JP85 / 00411 Sec。 371日期：1986年3月19日 102（e）日期1986年3月19日PCT提交1985年7月22日PCT公布。公开号WO86 / 01009 日本1986年2月13日。在半导体集成电路，光集成电路，约瑟夫逊元件等的制造中使用的精细图案形成方法中，使用由具有羧基的抗蚀剂构成的正性抗蚀剂混合物在侧链中和作为二价金属的氧化物，卤化物或有机酸盐的添加剂，并且当被加热时形成离聚物以产生热交联。使用在有机溶剂中混合有羧酸的显影剂显影正性抗蚀剂混合物，从而形成超细高精度图案。

2. 发明授权

US4634645A Method of forming resist micropattern 失效
标题翻译：形成抗蚀剂微图案的方法
公开(公告)号：US4634645A
公开(公告)日：1987-01-06
申请号：US721306
申请日：1985-04-09
申请人： Tadahito Matsuda , Katsuhiro Harada , Shigeru Moriya , Tetsuyoshi Ishii
发明人： Tadahito Matsuda , Katsuhiro Harada , Shigeru Moriya , Tetsuyoshi Ishii
IPC分类号： G03F7/00 , G03F7/40 , G03C5/00
CPC分类号： G03F7/40 , G03F7/0035 , Y10S430/143 , Y10S430/168
摘要： A resist pattern is formed on a substrate by forming a resist on a substrate and radiating an energy beam carrying predetermined pattern information onto the resist, thereby forming a recessed pattern in a surface portion of the resist so as not to extend through the resist. A flat mask layer is formed on the resist including the recessed pattern. The mask layer is uniformly etched along a direction of thickness thereof until at least a surface of the resist is exposed to allow the mask layer to remain on at least a bottom of the recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer. Finally, the resist is etched by using the mask pattern as an etching mask.
摘要翻译：通过在基板上形成抗蚀剂并将载有预定图案信息的能量束辐射到抗蚀剂上，从而在抗蚀剂的表面部分形成凹陷图形，从而在基板上形成抗蚀剂图案，以便不延伸通过抗蚀剂。在包括凹陷图案的抗蚀剂上形成平坦的掩模层。沿其厚度方向均匀地蚀刻掩模层，直到抗蚀剂的至少一个表面露出，以使掩模层保持在至少凹陷图案的底部，从而形成包括剩余的残留掩模层的掩模图案。最后，通过使用掩模图案作为蚀刻掩模蚀刻抗蚀剂。

3. 发明授权

US4820609A Highly sensitive positive resist mixture 失效
标题翻译：高灵敏度正抗蚀剂混合物
公开(公告)号：US4820609A
公开(公告)日：1989-04-11
申请号：US67263
申请日：1987-06-25
申请人： Kazumi Iwadate , Katsuhiro Harada
发明人： Kazumi Iwadate , Katsuhiro Harada
IPC分类号： G03F7/039 , G03C1/495
CPC分类号： G03F7/039 , Y10S430/143 , Y10S430/168
摘要： A highly sensitive positive resist mixture which comprises a resist having a carboxyl group at the side chain and which is decomposable by high energy rays constituted by a polymer having the formula I ##STR1## where R.sub.1, R.sub.2, . . . R.sub.n represent alkyl groups, halogenated alkyl groups, or aryl groups having five or fewer carbon atoms, or --COORa or --CORb (where Ra and Rb are alkyl groups or halogenated alkyl or aryl groups having five or fewer carbon atoms), and when ##EQU1## m.sub.c /M is in the range of 0.01 to 1.0 and m.sub.1 /M, m.sub.2 /M, . . . m.sub.n /M are respectively in the range of 0.99 to 0, and an additive selected from the group consisting of oxides, halides and organic acid salts of bivalent metals.

4. 发明授权

US4692579A Electron beam lithography apparatus 失效
标题翻译：电子束光刻设备
公开(公告)号：US4692579A
公开(公告)日：1987-09-08
申请号：US735184
申请日：1985-05-17
申请人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
发明人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30488 , H01J2237/31764
摘要： An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.
摘要翻译：电子束光刻设备包括：点电子束发生器; 使用点光束将期望图案曝光到晶片上的装置; 用于将图案分割成小区域的装置; 以及用于指定小区域的原点的装置，并且还通过使用点光束以固定的校正量对小区域内的部分进行数字扫描，从而减少D / A转换器与数字的相关的建立时间扫描。

5. 发明授权

US4430419A Positive resist and method for manufacturing a pattern thereof 失效
标题翻译：正性抗蚀剂及其图案的制造方法
公开(公告)号：US4430419A
公开(公告)日：1984-02-07
申请号：US339414
申请日：1982-01-15
申请人： Katsuhiro Harada
发明人： Katsuhiro Harada
IPC分类号： C09D133/10 , G03C5/00
CPC分类号： C09D133/10 , Y10S430/109 , Y10S430/167 , Y10S430/168
摘要： The invention provides a positive resist comprising a copolymer of 60 to 90 mol % of phenylmethacrylate and 40 to 10 mol % of methacrylic acid.The invention also provides a method for forming a pattern of a positive resist comprising the steps of:forming on a substrate a film of a positive resist which comprises a copolymer of 60 to 90% of phenylmethacrylate and 40 to 10 mol % of methacrylic acid;pre-baking said positive resist film to cross-link said copolymer;selectively radiating said positive resist film which has been pre-baked with a high energy beam to form a latent image; anddeveloping said latent image with a developing solvent. Said positive resist has excellent resistance to dry etching and high sensitivity, and shows good adhesion to a substrate and can realize high resolution.
摘要翻译：本发明提供一种正型抗蚀剂，其包含60至90mol％的甲基丙烯酸苯酯和40至10mol％的甲基丙烯酸的共聚物。本发明还提供了形成正性抗蚀剂图案的方法，包括以下步骤：在基材上形成正性抗蚀剂的膜，该膜包含60-90％甲基丙烯酸苯酯和40-10mol％甲基丙烯酸的共聚物; 预烘烤所述正性抗蚀剂膜以使所述共聚物交联; 选择性地辐射已经用高能量束预烘烤的正性抗蚀剂膜以形成潜像; 并用显影溶剂显影所述潜像。所述正性抗蚀剂具有优异的耐干腐蚀性和高灵敏度，并且对基材具有良好的粘附性并且可以实现高分辨率。

6. 发明授权

US5208629A Optical projection exposure method and system using the same 失效
标题翻译：光学投影曝光方法和使用该方法的系统
公开(公告)号：US5208629A
公开(公告)日：1993-05-04
申请号：US863454
申请日：1992-04-03
申请人： Seitaro Matsuo , Yoshinobu Takeuchi , Kazuhiko Komatsu , Emi Tamechika , Katsuhiro Harada , Yoshiaki Mimura , Toshiyuki Horiuchi
发明人： Seitaro Matsuo , Yoshinobu Takeuchi , Kazuhiko Komatsu , Emi Tamechika , Katsuhiro Harada , Yoshiaki Mimura , Toshiyuki Horiuchi
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70091 , G03F7/70125 , G03F7/70241 , G03F7/7025 , G03F7/70308
摘要： According to this invention, illumination light for illuminating a mask on which a micropattern is drawn is inclined at an angle corresponding to a numerical aperture of an optical projection lens located below the mask with respect to an optical axis. The illumination light is obliquely incident on the mask to expose the micropattern on an object located below the optical projection lens.

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