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1. 发明申请

US20130270435A1 ELECTRON BEAM DEVICE 有权
标题翻译：电子束装置
公开(公告)号：US20130270435A1
公开(公告)日：2013-10-17
申请号：US13879051
申请日：2011-10-05
申请人： Yasunari Sohda , Takeyoshi Ohashi , Tasuku Yano , Muneyuki Fukuda , Noritsugu Takahashi
发明人： Yasunari Sohda , Takeyoshi Ohashi , Tasuku Yano , Muneyuki Fukuda , Noritsugu Takahashi
IPC分类号： H01J37/02
CPC分类号： H01J37/023 , H01J37/153 , H01J37/28 , H01J2237/1534
摘要： The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.
摘要翻译：电子束装置包括电子源和物镜偏转器。电子束装置基于通过投射的电子束从材料发射的二次电子等的信号获得图像。电子束装置还包括偏置色差校正元件，该偏置色差校正元件还包括位于比物镜偏转器更靠近电子源的电磁偏转器和具有比电磁偏转器更窄的内径的静电偏转器，在电磁偏转器内，使得材料的高度位置与电磁偏转器重叠，并且能够施加偏移电压。因此，可以提供一种电子束装置，通过该电子束装置可以减轻由偏转引起的几何像差（寄生像差），并且在高分辨率的宽视角上实现偏转。

2. 发明授权

US08268209B2 Pattern forming method and its mold 失效
标题翻译：图案成型方法及其模具
公开(公告)号：US08268209B2
公开(公告)日：2012-09-18
申请号：US11623776
申请日：2007-01-17
申请人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
发明人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
IPC分类号： H01L23/544
CPC分类号： H01L21/76838 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7076 , G11B5/855 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.
摘要翻译：在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

3. 发明申请

US20110095183A1 ELECTRON BEAM MEASUREMENT APPARATUS 有权
标题翻译：电子束测量装置
公开(公告)号：US20110095183A1
公开(公告)日：2011-04-28
申请号：US12982202
申请日：2010-12-30
申请人： Yasunari SOHDA , Shoji HOTTA , Shinji OKAZAKI , Muneyuki FUKUDA
发明人： Yasunari SOHDA , Shoji HOTTA , Shinji OKAZAKI , Muneyuki FUKUDA
IPC分类号： G01N23/00
CPC分类号： G03F7/7065 , G03F7/70541 , G03F7/70625 , G06T7/0006 , G06T2207/10056 , G06T2207/30148 , H01J2237/221 , H01J2237/24578 , H01J2237/2817 , H01L22/12
摘要： The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.
摘要翻译：本发明提供一种电子束测量技术，用于测量样品上图案的形状或尺寸，或检测缺陷等。电子束测量装置具有通过多曝光方法照射在基板上描绘的图案的单元，并且根据曝光历史记录将所获取的图像中的图案分类为多组。基于图案的亮度和图案的白色波段之间的差异获得曝光历史记录。

4. 发明授权

US07750296B2 Scanning electron microscope and calibration of image distortion 有权
标题翻译：扫描电子显微镜和图像失真校准
公开(公告)号：US07750296B2
公开(公告)日：2010-07-06
申请号：US11866426
申请日：2007-10-03
申请人： Keiichiro Hitomi , Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi
发明人： Keiichiro Hitomi , Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi
IPC分类号： G01J4/00 , G01N23/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2826
摘要： In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
摘要翻译：在通过测量扫描失真和校准扫描失真来获得没有失真的扫描电子显微镜图像的方法和装置中，存在由于电子束的扫描失真引起的尺寸控制中出现误差的问题。为了解决这个问题，通过用电子束扫描预定区域来获得图像，从图像中选择多个区域，在每个区域中测量图案间距，并根据结果计算扫描失真量的测量，然后校正。

5. 发明授权

US07425714B2 Measurement method of electron beam current, electron beam writing system and electron beam detector 有权
标题翻译：电子束电流，电子束写入系统和电子束检测器的测量方法
公开(公告)号：US07425714B2
公开(公告)日：2008-09-16
申请号：US11207710
申请日：2005-08-22
申请人： Makoto Sakakibara , Yoshinori Nakayama , Hiroya Ohta , Yasunari Sohda , Noriyuki Tanaka , Yasuhiro Someda
发明人： Makoto Sakakibara , Yoshinori Nakayama , Hiroya Ohta , Yasunari Sohda , Noriyuki Tanaka , Yasuhiro Someda
IPC分类号： G21K5/10
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G01R19/0061 , H01J37/243 , H01J2237/30472
摘要： A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.
摘要翻译：提供了一种能够在精确测量电子束写入系统中的弱光束电流的同时减少重叠在长传输线上的噪声影响的技术，并且能够精确高效地测量使用多个光束的光束写入系统中的弱光束电流。通过使用用于连接和断开电子束检测装置的开关和检测到的信号线，电子束检测装置与检测到的信号线断开，以在束电流测量期间将检测到的信号累积在电子束检测装置中。在测量结束的同时，连接电子束检测装置和检测信号线来测量累积信号。此外，为了同时进行测量方法，使用多个电子束检测装置和开关以高精度同时测量多个电子束。

6. 发明授权

US07423274B2 Electron beam writing system and electron beam writing method 失效
标题翻译：电子束写入系统和电子束写入方法
公开(公告)号：US07423274B2
公开(公告)日：2008-09-09
申请号：US11355952
申请日：2006-02-17
申请人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
发明人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
IPC分类号： A61N5/00
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/3045
摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.
摘要翻译：提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便基于检测结果校正电子束的位置或偏转量。

7. 发明申请

US20060289781A1 Method and apparatus for applying charged particle beam 有权
标题翻译：用于施加带电粒子束的方法和装置
公开(公告)号：US20060289781A1
公开(公告)日：2006-12-28
申请号：US11475014
申请日：2006-06-27
申请人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
IPC分类号： H01J3/14 , G21K1/08
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/3174 , H01J2237/0458 , H01J2237/1501 , H01J2237/31774 , H01J2237/31776
摘要： In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.
摘要翻译：在诸如电子束光刻系统的带电粒子束施加装置中，存在促进交叉的位置调整并提高装置的生产量的技术。聚光透镜的前焦平面设置有用于调节光束轴上的交叉点的高度的尖端（交叉调节边缘）。通过使用交叉调节边缘来测量电子束的形状，即使电子枪形成的交叉点的高度或电子枪的电阻，也可以始终检查聚光透镜的前焦平面上的光束的形状源形成透镜改变。

8. 发明申请

US20050072941A1 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US20050072941A1
公开(公告)日：2005-04-07
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

9. 发明授权

US06838682B2 Electron beam exposure equipment and electron beam exposure method 失效
标题翻译：电子束曝光设备和电子束曝光方法
公开(公告)号：US06838682B2
公开(公告)日：2005-01-04
申请号：US10634878
申请日：2003-08-06
申请人： Yasunari Sohda , Osamu Kamimura , Hiroya Ohta , Susumu Gotoh
发明人： Yasunari Sohda , Osamu Kamimura , Hiroya Ohta , Susumu Gotoh
IPC分类号： G03F7/20 , G03F9/02 , H01J37/04 , H01J37/141 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： H01J37/1471 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/1501
摘要： There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.
摘要翻译：提供了一种使用电子光学系统进行光学调节的电子束曝光技术，该系统使用大场投影所需的双重透镜。具有通过至少两个电磁透镜形成一个图像的部分的电子束曝光设备具有测量位置同时改变至少两个透镜的激发的图像平面附近的电子束; 并且控制装置将测量结果反馈到对准器或透镜的强度。

10. 发明授权

US06329665B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06329665B1
公开(公告)日：2001-12-11
申请号：US09621708
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择孔，将传播孔连续地提供给掩模传送方向，模板掩模在与梁一起传播的同时被移动，而其它模版当指定的模板掩模孔组被曝光时，执行掩模转印。重复这些操作，以便执行所有曝光处理。

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