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1. 发明授权

US5162240A Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate 失效
标题翻译：在厚膜和薄膜混合多层布线基板上制作电路图案的方法和装置
公开(公告)号：US5162240A
公开(公告)日：1992-11-10
申请号：US537492
申请日：1990-06-12
申请人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
发明人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
IPC分类号： H01L21/48 , H01L23/538 , H01L23/544 , H05K1/02 , H05K1/03 , H05K1/09 , H05K3/46
CPC分类号： H05K3/4679 , H01L21/4857 , H01L23/5383 , H01L23/544 , H01L2223/5442 , H01L2223/54473 , H01L2224/16 , H01L2224/16235 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15174 , H05K1/0269 , H05K1/0306 , H05K1/092 , H05K2201/09781 , H05K2201/09918 , H05K3/4605 , H05K3/467
摘要： A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.
摘要翻译：厚薄膜混合多层布线基板包括设置在厚膜电路和薄膜电路之间的调整层，以便调整厚膜电路和薄膜电路的位置，具有高集成度和大面积的厚薄薄膜混合基板。根据厚膜电路基板的形状的分散，使用直接印刷法形成调整层，以吸收基板的分散。此外，为了吸收由于烧结引起的厚膜基板的收缩分散，通过电子束检测设置在基板上的标记的位置，然后形成连接图案以连接到规则图案。

2. 发明授权

US4701620A Electron beam exposure apparatus 失效
标题翻译：电子束曝光装置
公开(公告)号：US4701620A
公开(公告)日：1987-10-20
申请号：US893180
申请日：1986-08-05
申请人： Masahide Okumura , Takashi Matsuzaka , Genya Matsuoka , Norio Saitou
发明人： Masahide Okumura , Takashi Matsuzaka , Genya Matsuoka , Norio Saitou
IPC分类号： H01L21/30 , H01J37/141 , H01J37/153 , H01J37/21 , H01J37/304 , H01L21/027 , G21K1/093 , H01J37/07
CPC分类号： H01J37/153 , H01J37/304
摘要： Disclosed is an electron beam exposure apparatus which includes an objective lens focusing an electron beam, and a dynamic focus correction lens dynamically correcting the focusing by the objective lens. The apparatus comprises a control circuit which, in order to prevent a current variation induced in the objective lens by the dynamic focus correction lens, controls current supplied to the objective lens so as to cancel the current variation induced in the objective lens due to the coil current of the dynamic focus correction lens.
摘要翻译：公开了一种电子束曝光装置，其包括聚焦电子束的物镜和动态校正透镜，动态校正物镜的聚焦。该装置包括一个控制电路，为了防止物镜由动态聚焦校正透镜引起的电流变化，控制提供给物镜的电流，以消除由于线圈而引起的物镜中的电流变化电流的动态聚焦校正镜头。

3. 发明授权

US5311026A Charged particle beam lithography system and method therefor 失效
标题翻译：带电粒子束光刻系统及其方法
公开(公告)号：US5311026A
公开(公告)日：1994-05-10
申请号：US858575
申请日：1992-03-27
申请人： Norio Saitou , Yoshihiko Okamoto , Takashi Yamazaki , Hideo Todokoro
发明人： Norio Saitou , Yoshihiko Okamoto , Takashi Yamazaki , Hideo Todokoro
IPC分类号： H01L21/027 , H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/1505 , H01J2237/3045 , H01J2237/31776
摘要： The present invention relates to a system for drawing patterns on a wafer by using a charged particle beam such as an electron beam, in which a complicated prealigning mechanism used for mounting the wafer on a stage is omitted. Instead, according to the present system, rotation of the wafer is detected and a shaped beam is rotated by an amount corresponding to the value detected. Subsequently, a predetermined pattern is drawn on the substrate. The system includes a detecting device for detecting the rotation of the wafer by using an orientation flat or adjusting marks; a computer for storing a value corresponding to the rotation thus detected; a rotating lens control circuit for receiving data from the computer; and a rotating lens.
摘要翻译：本发明涉及一种通过使用诸如电子束的带电粒子束在晶片上绘制图形的系统，其中省略了用于将晶片安装在平台上的复杂预对准机构。相反，根据本系统，检测晶片的旋转，并且将成形光束旋转与所检测的值对应的量。随后，在衬底上绘制预定图案。该系统包括用于通过使用取向平面或调整标记来检测晶片的旋转的检测装置; 用于存储与所检测的旋转对应的值的计算机; 用于从计算机接收数据的旋转透镜控制电路; 和旋转透镜。

4. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

5. 发明授权

US4396901A Method for correcting deflection distortion in an apparatus for charged particle lithography 失效
标题翻译：用于校正带电粒子光刻装置中的偏转变形的方法
公开(公告)号：US4396901A
公开(公告)日：1983-08-02
申请号：US227940
申请日：1981-01-23
申请人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
发明人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
IPC分类号： H01L21/027 , H01J37/304 , H01J29/70 , G06K7/10
CPC分类号： H01J37/304
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.
摘要翻译：在用于校正通过扫描样品上的图案的装置中产生的偏转失真的方法中，通过扫描带电粒子束而产生的偏转变形的校正根据待部分的高度（变形）基于在通过扫描带电粒子束在具有至少两个具有不等高度的参考水平的标记上获得的标记的各个参考水平处的偏转失真的校正幅度的样本（例如，晶片）上线性化沿光轴的方向。

6. 发明授权

US06946665B2 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US06946665B2
公开(公告)日：2005-09-20
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01J3/07 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括用于使多个带电粒子束入射的第一测量部件，并测量带电粒子束的总电流值。第二测量构件使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

7. 发明授权

US5759423A Electron beam writing method and apparatus for carrying out the same 失效
标题翻译：电子束写入方法及其执行装置
公开(公告)号：US5759423A
公开(公告)日：1998-06-02
申请号：US563329
申请日：1995-11-28
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroyuki Itoh , Katsuhiro Kawasaki , Norio Saitou
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroyuki Itoh , Katsuhiro Kawasaki , Norio Saitou
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027 , B44C1/22 , H01L21/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam having a rectangular cross section; a second mask provided with a second rectangular aperture for passing the primary shaped beam to shape the primary shaped beam in a secondary shaped beam having a rectangular cross section, and triangular apertures for passing the primary shaped beam to form a secondary shaped beam having a triangular cross section; a first electron beam deflecting system for moving the primary shaped beam on the surface of the second mask; and a second electron beam deflecting system for moving the secondary shaped beam on the surface of a workpiece on which a pattern is to be written. Each of the triangular apertures is formed in a size such that the triangular aperture can be entirely covered with a rectangular image formed by the first shaped beam on the surface of the second mask.
摘要翻译：电子束写入装置包括：用于投射电子束的电子束源; 第一掩模，设置有第一矩形孔，用于使由电子束源投影的电子束通过，以将电子束形成为具有矩形横截面的主要形状的梁; 第二掩模，其设置有第二矩形孔，用于使主要成形梁通过，以形成具有矩形截面的次级成形梁的主要成形梁，以及三角形孔，用于使初级成形梁通过以形成具有三角形的二次成形梁横截面; 第一电子束偏转系统，用于将第一形状光束移动到第二掩模的表面上; 以及用于在待写入图案的工件的表面上移动二次成形光束的第二电子束偏转系统。每个三角形孔形成为使得三角形孔可以被由第二掩模的表面上的第一成形束形成的矩形图像完全覆盖的尺寸。

8. 发明授权

US08827966B2 Skin patch instrument for treating pain 有权
标题翻译：用于治疗疼痛的皮肤贴片仪
公开(公告)号：US08827966B2
公开(公告)日：2014-09-09
申请号：US12988686
申请日：2008-04-30
申请人： Norio Saitou
发明人： Norio Saitou
IPC分类号： A61M35/00 , A61N1/30 , A61F13/00 , A61F13/02 , A61B17/00
CPC分类号： A61H1/008 , A61B5/0053 , A61B5/4827 , A61F13/023 , A61F13/0273 , A61F2013/00919 , A61F2013/00936
摘要： A therapeutic patch for treating pain capable of compressing a tender area up to a boundary thereof and/or an entire induration with metallic grains or crushed stones by a treatment method in accordance with a classification determined after clarifying a site of pain by pressing a skin with a pressing bar or fingers (first to fourth fingers) to classify the cause of pain, thereby finding the presence of a geographical tender area and/or the presence of an induration on a skin as the cause of pain.
摘要翻译：一种用于治疗疼痛的治疗补片，其能够通过根据通过按压皮肤澄清疼痛部位而确定的分类后的处理方法将金属颗粒或粉碎石块压缩至其边界的嫩嫩区域和/或整体硬结按压杆或手指（第一至第四指）来分类疼痛的原因，从而发现皮肤上存在地理标记区域和/或硬结的存在作为疼痛的原因。

9. 发明授权

US06667486B2 Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same 有权
标题翻译：电子束曝光方法，电子束曝光装置及使用其的装置制造方法
公开(公告)号：US06667486B2
公开(公告)日：2003-12-23
申请号：US10219769
申请日：2002-08-16
申请人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
发明人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
IPC分类号： H01J3708
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/304 , H01J37/3177
摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
摘要翻译：本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使由多个电子束中的每一个形成的图案的图案数据的位置。

10. 发明授权

US5757409A Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
公开(公告)号：US5757409A
公开(公告)日：1998-05-26
申请号：US644089
申请日：1996-05-10
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

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