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1. 发明申请

US20120132801A1 METHOD AND AN APPARATUS OF AN INSPECTION SYSTEM USING AN ELECTRON BEAM 有权
标题翻译：使用电子束检测系统的方法和装置
公开(公告)号：US20120132801A1
公开(公告)日：2012-05-31
申请号：US13366874
申请日：2012-02-06
申请人： Yuko IWABUCHI , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人： Yuko IWABUCHI , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译：通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度作为半导体晶片。本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

2. 发明授权

US07439506B2 Method and an apparatus of an inspection system using an electron beam 失效
标题翻译：使用电子束的检查系统的方法和装置
公开(公告)号：US07439506B2
公开(公告)日：2008-10-21
申请号：US11798239
申请日：2007-05-11
申请人： Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人： Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号： H01J37/256 , H01J37/244
CPC分类号： H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译：通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度作为半导体晶片。本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

3. 发明授权

US07439504B2 Pattern inspection method and apparatus using electron beam 失效
标题翻译：使用电子束的图案检查方法和装置
公开(公告)号：US07439504B2
公开(公告)日：2008-10-21
申请号：US11176344
申请日：2005-07-08
申请人： Takashi Hiroi , Asahiro Kuni , Masahiro Watanabe , Chie Shishido , Hiroyuki Shinada , Yasuhiro Gunji , Atsuko Takafuji
发明人： Takashi Hiroi , Asahiro Kuni , Masahiro Watanabe , Chie Shishido , Hiroyuki Shinada , Yasuhiro Gunji , Atsuko Takafuji
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/24465 , H01J2237/2817
摘要： A pattern inspection method and apparatus in which a charged particle beam is irradiated onto a surface of a specimen on which a pattern is formed, plural sensors simultaneously detect secondary particles emanated from the surface of the specimen by the irradiation, signals outputted from each sensor of the plural sensors which simultaneously detect the secondary particles are added, an image of the surface of the specimen on which the pattern is obtained from the added signals, and the image is processed to detect a defect of the pattern.
摘要翻译：一种图案检查方法和装置，其中带电粒子束照射到形成有图案的样本的表面上，多个传感器同时检测通过照射从样品表面发出的二次颗粒，从每个传感器输出的信号添加同时检测二次粒子的多个传感器，从附加的信号中添加从其获得图案的样本的表面的图像，并且处理图像以检测图案的缺陷。

4. 发明授权

US07397031B2 Method of inspecting a circuit pattern and inspecting instrument 失效
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US07397031B2
公开(公告)日：2008-07-08
申请号：US11452989
申请日：2006-06-15
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： H01J37/28
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.
摘要翻译：使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

5. 发明申请

US20070181808A1 Electron microscope and electron bean inspection system. 审中-公开
标题翻译：电子显微镜和电子豆检查系统。
公开(公告)号：US20070181808A1
公开(公告)日：2007-08-09
申请号：US11701386
申请日：2007-02-02
申请人： Hisaya Murakoshi , Hideo Todokoro , Hiroyuki Shinada , Masaki Hasegawa , Momoyo Enyama
发明人： Hisaya Murakoshi , Hideo Todokoro , Hiroyuki Shinada , Masaki Hasegawa , Momoyo Enyama
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J2237/057 , H01J2237/1508 , H01J2237/24592 , H01J2237/2538 , H01J2237/2817
摘要： While an image obtained by a general electron microscope is affected by the shape and material of an object specimen, an image obtained from mirror electrons is affected by the shape of an equipotential surface on which the mirror electrons are reflected, thereby the image interpretation is complicated. A mirror electron microscope of the present invention is provided with the following means for controlling a reflecting plane of the mirror electrons according to the structure of an object pattern to be measured or a concerned defect.1) Means for controlling a potential difference between a specimen and an electron source equivalent to a height of a reflecting plane of a mirror electron beam according to a type, an operation condition of an electron source, and a type of a pattern on a specimen. 2) Means for controlling an energy distribution of an illuminating beam with an energy filter 9 disposed in an illuminating system. It is thus possible to inspect a specimen according to a size and a potential of a pattern, which are distinguished from others.
摘要翻译：当通过一般电子显微镜获得的图像受目标样本的形状和材料的影响时，由镜电子获得的图像受到反射镜电子反射的等电位面的形状的影响，从而图像解释复杂。本发明的镜电子显微镜具备以下用于根据被测量对象图案的结构或相关缺陷来控制镜电子的反射面的装置。 1）根据类型，电子源的操作条件和样品上的图案的类型来控制样品和电子源之间的电位差与电子束的反射面的高度的电位差的装置。 2）用于通过设置在照明系统中的能量过滤器9来控制照明光束的能量分布的装置。因此，可以根据区别于其他图案的尺寸和电位来检查样本。

6. 发明授权

US06979823B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06979823B2
公开(公告)日：2005-12-27
申请号：US10865850
申请日：2004-06-14
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66 , H01J37/244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

7. 发明授权

US06888138B2 Absorption current image apparatus in electron microscope 有权
标题翻译：吸收电流图像设备在电子显微镜下
公开(公告)号：US06888138B2
公开(公告)日：2005-05-03
申请号：US10868907
申请日：2004-06-17
申请人： Takashi Ohshima , Hiroshi Makino , Hiroshi Toyama , Hiroyuki Shinada
发明人： Takashi Ohshima , Hiroshi Makino , Hiroshi Toyama , Hiroyuki Shinada
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/04 , H01J37/244 , H01J37/28
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/2605
摘要： It was hard for conventional SEMs to take measurements at a high speed and take accurate measurements when an insulator exists between an object to probe and the detector, because the conventional SEMs used a continuous electron beam. Also, it was impossible to apply voltage to the sample during the measurement of current. By pulse-modulating the electron beam and extracting a high-frequency signal component from the sample, new SEM equipment disclosed herein detects electrons absorbed in the sample at a high speed and with precision. Precise and high-speed absorption current measurements can be achieved. High-functionality inspection apparatus can be provided.
摘要翻译：传统的扫描电镜很难在高速下进行测量，并且当物体与探针和检测器之间存在绝缘体时进行精确的测量，因为传统的扫描电镜使用连续的电子束。此外，在测量电流期间不可能对样品施加电压。通过脉冲调制电子束并从样品中提取高频信号分量，本文公开的新的SEM设备以高速和精确的方式检测样品中吸收的电子。可以实现精确和高速吸收电流测量。可以提供高功能检查装置。

8. 发明申请

US20050051722A1 Inspection system, inspection method, and process management method 有权
标题翻译：检验制度，检验方法和流程管理方法
公开(公告)号：US20050051722A1
公开(公告)日：2005-03-10
申请号：US10885725
申请日：2004-07-08
申请人： Hiroshi Makino , Hisaya Murakoshi , Hiroyuki Shinada , Hideo Todokoro
发明人： Hiroshi Makino , Hisaya Murakoshi , Hiroyuki Shinada , Hideo Todokoro
IPC分类号： G01B15/00 , G01B15/08 , G01N23/04 , G01N23/225 , H01J37/21 , H01J37/22 , H01J37/29 , H01L21/66 , G01N23/00
CPC分类号： H01J37/292 , G01N23/04 , H01J2237/2817
摘要： The present invention relates to an inspection apparatus comprising: an electron emitting unit for sequentially emitting an electron beam in the direction of the inspection area of a sample; a decelerating means for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the electron beam, which has been drawn back in the vicinity of the inspection area, on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition and an image processing unit for comparing the images on different image forming conditions with one another to thereby detect a defect in the inspection area.
摘要翻译：本发明涉及一种检查装置，包括：电子发射单元，用于沿样本的检查区域的方向依次发射电子束; 用于在检查区域附近拉回电子束的减速装置; 用于在多个不同的图像形成条件下形成已经被拉回到检查区域附近的电子束的图像的成像单元; 用于捕获形成与每个图像形成条件相对应的图像的电子束的图像检测单元和用于将不同图像形成条件上的图像彼此进行比较的图像处理单元，从而检测检查区域中的缺陷。

9. 发明申请

US20050045820A1 ABSORPTION CURRENT IMAGE APPARATUS IN ELECTRON MICROSCOPE 有权
标题翻译：电子显微镜中的吸收电流图像装置
公开(公告)号：US20050045820A1
公开(公告)日：2005-03-03
申请号：US10868907
申请日：2004-06-17
申请人： Takashi Ohshima , Hiroshi Makino , Hiroshi Toyama , Hiroyuki Shinada
发明人： Takashi Ohshima , Hiroshi Makino , Hiroshi Toyama , Hiroyuki Shinada
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/04 , H01J37/244 , H01J37/28
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/2605
摘要： It was hard for conventional SEMs to take measurements at a high speed and take accurate measurements when an insulator exists between an object to probe and the detector, because the conventional SEMs used a continuous electron beam. Also, it was impossible to apply voltage to the sample during the measurement of current. By pulse-modulating the electron beam and extracting a high-frequency signal component from the sample, new SEM equipment disclosed herein detects electrons absorbed in the sample at a high speed and with precision. Precise and high-speed absorption current measurements can be achieved. High-functionality inspection apparatus can be provided.
摘要翻译：传统的扫描电镜很难在高速下进行测量，并且当物体与探针和检测器之间存在绝缘体时进行精确的测量，因为传统的扫描电镜使用连续的电子束。此外，在测量电流期间不可能对样品施加电压。通过脉冲调制电子束并从样品中提取高频信号分量，本文公开的新的SEM设备以高速和精确的方式检测样品中吸收的电子。可以实现精确和高速吸收电流测量。可以提供高功能检查装置。

10. 发明授权

US06768113B2 WORKPIECE HOLDER, SEMICONDUCTOR FABRICATING APPARATUS, SEMICONDUCTOR INSPECTING APPARATUS, CIRCUIT PATTERN INSPECTING APPARATUS, CHARGED PARTICLE BEAM APPLICATION APPARATUS, CALIBRATING SUBSTRATE, WORKPIECE HOLDING METHOD, CIRCUIT PATTERN INSPECTING METHOD, AND CHARGED PARTICLE BEAM APPLICATION METHOD 失效
标题翻译：工件夹具，半导体制造装置，半导体检查装置，电路图案检查装置，充电颗粒光束应用装置，校准基板，工件保持方法，电路图案检查方法和充电颗粒光束应用方法
公开(公告)号：US06768113B2
公开(公告)日：2004-07-27
申请号：US10309275
申请日：2002-12-26
申请人： Hiroyuki Suzuki , Hiroyuki Shinada , Atsuko Takafuji , Yasutsugu Usami , Shuji Sugiyama
发明人： Hiroyuki Suzuki , Hiroyuki Shinada , Atsuko Takafuji , Yasutsugu Usami , Shuji Sugiyama
IPC分类号： H01J3726
CPC分类号： H01J37/28 , H01J2237/082 , H01J2237/2826
摘要： Heights of a sample are calibrated by setting a calibrating substrate on a stage and then irradiating a charged particle beam onto standard marks provided on at least two kinds of surfaces having different substrate heights. Secondary charged particles produced from said irradiated standard marks on the substrate are and detected and a surface height of the irradiated portion of the substrate measured. The difference in height between the standard marks is set to be in a range containing an extent, over the entire sample, to which the height of the sample varies due to warping.
摘要翻译：通过在台上设置校准基板，然后将带电粒子束照射到设置在具有不同衬底高度的至少两种表面上的标准标记上来校准样品的高度。并且测量从衬底上的所述照射的标准标记产生的二次带电粒子并测量衬底的照射部分的表面高度。标准标记之间的高度差被设定在包含整个样品的范围内，样品的高度由于翘曲而变化。

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