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1. 发明授权

US06927002B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

2. 发明授权

US06750000B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06750000B2
公开(公告)日：2004-06-15
申请号：US10671666
申请日：2003-09-29
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F700
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

3. 发明授权

US06653052B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06653052B2
公开(公告)日：2003-11-25
申请号：US09810194
申请日：2001-03-19
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F750
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

4. 发明授权

US6121625A Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US6121625A
公开(公告)日：2000-09-19
申请号：US87296
申请日：1998-05-29
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： G03F7/20 , C08F10/02 , G03F1/20 , H01J37/147 , H01J37/317 , H01L21/027 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

5. 发明授权

US5520297A Aperture plate and a method of manufacturing the same 失效
标题翻译：孔板及其制造方法
公开(公告)号：US5520297A
公开(公告)日：1996-05-28
申请号：US260369
申请日：1994-06-14
申请人： Teruyuki Kagami , Sakae Yaita , Niro Katane , Mitsuo Tanabe , Yoshinori Nakayama , Hidetoshi Satoh
发明人： Teruyuki Kagami , Sakae Yaita , Niro Katane , Mitsuo Tanabe , Yoshinori Nakayama , Hidetoshi Satoh
IPC分类号： H01L21/027 , G03F1/20 , G03F1/40 , B44C1/22 , C25F3/00
CPC分类号： G03F1/20 , Y10S438/928 , Y10T428/24273
摘要： A semiconductor substrate has a plurality of chip portions and chip separating portions for partitioning the plurality of chip portions into each other. The plurality of chip portions and the separating portions are etched on one side of the semiconductor substrate so that each of the plurality of chip portions is provided with stencil patterns. Furthermore, the plurality of chip portions and chip separating portions are etched on the other side of the semiconductor substrate so that the stencil patterns are exposed and the plurality of chip portions are capable of being substantially separated from each other.
摘要翻译：半导体衬底具有多个芯片部分和用于将多个芯片部分彼此分隔的芯片分离部分。多个芯片部分和分离部分被蚀刻在半导体衬底的一侧上，使得多个芯片部分中的每一个设置有模板图案。此外，在半导体基板的另一侧蚀刻多个芯片部分和芯片分离部分，使得模板图案被暴露，并且多个芯片部分能够彼此基本分离。

6. 发明授权

US06329665B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06329665B1
公开(公告)日：2001-12-11
申请号：US09621708
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择孔，将传播孔连续地提供给掩模传送方向，模板掩模在与梁一起传播的同时被移动，而其它模版当指定的模板掩模孔组被曝光时，执行掩模转印。重复这些操作，以便执行所有曝光处理。

7. 发明授权

US6159644A Method of fabricating semiconductor circuit devices utilizing multiple exposures 失效
公开(公告)号：US6159644A
公开(公告)日：2000-12-12
申请号：US142077
申请日：1998-09-01
申请人： Hidetoshi Satoh , Yoshinori Nakayama , Masahide Okumura , Hiroya Ohta , Norio Saitou
发明人： Hidetoshi Satoh , Yoshinori Nakayama , Masahide Okumura , Hiroya Ohta , Norio Saitou
IPC分类号： G03F7/20 , H01J37/304 , G03F9/00
CPC分类号： G03F7/70616 , G03F7/70433 , G03F7/70458 , G03F7/70633 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.

8. 发明授权

US06509572B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06509572B2
公开(公告)日：2003-01-21
申请号：US10105284
申请日：2002-03-26
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

9. 发明授权

US06441383B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06441383B1
公开(公告)日：2002-08-27
申请号：US09814062
申请日：2001-03-22
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择光圈，传送孔径被连续地用于掩模传送方向，模板掩模在与光束一起传播的同时被移动，而其它模版当指定的模板掩模孔组被曝光时，执行掩模转印。重复这些操作，以便执行所有曝光处理。

10. 发明授权

US06320198B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06320198B1
公开(公告)日：2001-11-20
申请号：US09621707
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

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