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1. 发明授权

US4489241A Exposure method with electron beam exposure apparatus 失效
标题翻译：电子束曝光装置曝光方法
公开(公告)号：US4489241A
公开(公告)日：1984-12-18
申请号：US386579
申请日：1982-06-09
申请人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
发明人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
IPC分类号： H01J37/304 , H01L21/027 , H01L21/30 , H01L23/544 , H01J37/317
CPC分类号： H01L23/544 , H01J37/3045 , H01L21/0277 , H01L21/30 , H01L2223/54453 , H01L2924/0002
摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate having thereon a number of chips are divided into blocks, which each contain a plurality of chips. Marks are provided on each of the blocks, the positions of the marks are detected and the writing exposure positions of the chips within each block are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
摘要翻译：具有电子束曝光装置的曝光方法，其中电子束被发射到诸如其上涂覆有电子束敏感抗蚀剂的硅晶片的基板上，从而直接形成或书写图案。其上具有多个芯片的基板被分成块，每个块包含多个芯片。在每个块上提供标记，检测标记的位置，并且基于检测结果修改每个块内的码片的写入曝光位置。根据本发明，可以高精度地进行有效的写入曝光。

2. 发明授权

US4443703A Method and apparatus of deflection calibration for a charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置的偏转校准方法和装置
公开(公告)号：US4443703A
公开(公告)日：1984-04-17
申请号：US347719
申请日：1982-02-10
申请人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
发明人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
IPC分类号： H01J37/147 , H01J37/153 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/147 , H01J37/304
摘要： A method and apparatus of deflection calibration for a charged particle beam exposure apparatus having an electromagnetic deflector and an electrostatic deflector both for deflecting a charged particle beam and a movable stage structure. The electromagnetic deflector is previously subjected to a calibration operation known per se. With a fiducial mark positioned in a predetermined location, the beam is deflected by the calibrated electromagnetic deflector instead of moving the stage structure, the beam is then deflected by the electrostatic deflector to detect the location of the fiducial mark, and deflection data are measured of the electrostatic deflection for the detection of the location of the fiducial mark. According to the present invention the calibration is performed in a short time without causing degradation of the precision of, e.g., lithography due to heat generated by movement of the stage structure.
摘要翻译：一种具有用于偏转带电粒子束和可移动平台结构的电磁偏转器和静电偏转器的带电粒子束曝光装置的偏转校准方法和装置。电磁偏转器预先经过本身已知的校准操作。将基准标记定位在预定位置时，光束被校准的电磁偏转器偏转，而不是移动平台结构，然后光束被静电偏转器偏转以检测基准标记的位置，并且测量偏转数据用于检测静电偏转的位置的基准标记。根据本发明，在短时间内执行校准，而不会导致由于台架结构的移动产生的热量导致的光刻的精度的降低。

3. 发明授权

US4437008A Electron beam control system 失效
标题翻译：电子束控制系统
公开(公告)号：US4437008A
公开(公告)日：1984-03-13
申请号：US256682
申请日：1981-04-23
申请人： Tadahito Matsuda , Masahide Okumura , Hisatake Yokouchi , Susumu Ozasa , Yasuo Kato
发明人： Tadahito Matsuda , Masahide Okumura , Hisatake Yokouchi , Susumu Ozasa , Yasuo Kato
IPC分类号： H01J37/147 , H01J37/24 , H01J37/302 , H01J3/14 , G06M3/14
CPC分类号： H01J37/24 , H01J37/302
摘要： In an electron beam control system wherein manual adjusting means is used for adjusting currents to flow through two deflection coils which serve to deflect an electron beam in directions of two, x and y axes, respectively; an electron beam control system wherein the manual adjusting means comprises a joy stick type variable resistor which can simultaneously deliver coil deflection signal components in the directions of the two axes through a single operation, and the signal components from the variable resistor are applied to the corresponding deflection coils as adjusting currents.
摘要翻译：在电子束控制系统中，其中使用手动调节装置来调节流过两个偏转线圈的电流，这两个偏转线圈分别用于在两个x和y轴的方向上偏转电子束; 电子束控制系统，其中手动调节装置包括操纵杆式可变电阻器，其可以通过单次操作同时在两个轴线的方向上传送线圈偏转信号分量，并且来自可变电阻器的信号分量被施加到相应的偏转线圈作为调整电流。

4. 发明授权

US4577111A Apparatus for electron beam lithography 失效
标题翻译：电子束光刻设备
公开(公告)号：US4577111A
公开(公告)日：1986-03-18
申请号：US516091
申请日：1983-07-22
申请人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
发明人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
IPC分类号： G03F7/20 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/30 , H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3174 , H01L21/30 , H01J2237/1505 , H01J2237/152 , H01J2237/30472 , H01J2237/31776
摘要： An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.
摘要翻译：用于电子束光刻的装置包括至少一个掩模，其配备有要经受来自电子束发生器的电子束的多边形孔，用于对掩模的多边形孔径进行缩小和成像的电子透镜系统和用于电子的螺线管线圈光束旋转调节放置在掩模和终末电子透镜之间。

5. 发明授权

US4692579A Electron beam lithography apparatus 失效
标题翻译：电子束光刻设备
公开(公告)号：US4692579A
公开(公告)日：1987-09-08
申请号：US735184
申请日：1985-05-17
申请人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
发明人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30488 , H01J2237/31764
摘要： An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.
摘要翻译：电子束光刻设备包括：点电子束发生器; 使用点光束将期望图案曝光到晶片上的装置; 用于将图案分割成小区域的装置; 以及用于指定小区域的原点的装置，并且还通过使用点光束以固定的校正量对小区域内的部分进行数字扫描，从而减少D / A转换器与数字的相关的建立时间扫描。

6. 发明授权

US4396901A Method for correcting deflection distortion in an apparatus for charged particle lithography 失效
标题翻译：用于校正带电粒子光刻装置中的偏转变形的方法
公开(公告)号：US4396901A
公开(公告)日：1983-08-02
申请号：US227940
申请日：1981-01-23
申请人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
发明人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
IPC分类号： H01L21/027 , H01J37/304 , H01J29/70 , G06K7/10
CPC分类号： H01J37/304
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.
摘要翻译：在用于校正通过扫描样品上的图案的装置中产生的偏转失真的方法中，通过扫描带电粒子束而产生的偏转变形的校正根据待部分的高度（变形）基于在通过扫描带电粒子束在具有至少两个具有不等高度的参考水平的标记上获得的标记的各个参考水平处的偏转失真的校正幅度的样本（例如，晶片）上线性化沿光轴的方向。

7. 发明授权

US4629930A Plasma ion source 失效
标题翻译：等离子体离子源
公开(公告)号：US4629930A
公开(公告)日：1986-12-16
申请号：US517696
申请日：1983-07-27
申请人： Noriyuki Sakudo , Osami Okada , Susumu Ozasa , Katsumi Tokiguchi , Hidemi Koike , Shunroku Taya , Mitsunori Komatsumoto , Mitsuo Komatsu
发明人： Noriyuki Sakudo , Osami Okada , Susumu Ozasa , Katsumi Tokiguchi , Hidemi Koike , Shunroku Taya , Mitsunori Komatsumoto , Mitsuo Komatsu
IPC分类号： H01J27/02 , H01J27/16 , H05H7/08
CPC分类号： H01J27/16 , H01J27/022
摘要： A plasma ion source includes a discharge chamber in which a plasma is produced by plasma generator, with an acceleration electrode being disposed adjacent to the discharge chamber in order to extract ions from the produced plasma. A deceleration electrode is disposed adjacent to the acceleration electrode to decelerate the extracted ions, and a ground electrode is disposed adjacent to the deceleration electrode. An insulator container is disposed so as to surround the discharge chamber and the respective electrodes, and a shield ring electrode of ground potential is disposed in the vicinity of the deceleration electrode and along an inner wall surface of the insulator container in order to prevent any discharge from arising across the deceleration electrode and the ground electrode.
摘要翻译：等离子体离子源包括其中由等离子体发生器产生等离子体的放电室，其中加速电极邻近放电室设置，以从所产生的等离子体中提取离子。减速电极与加速电极相邻地设置，以使所提取的离子减速，并且接地电极与减速电极相邻配置。绝缘体容器设置成围绕放电室和各个电极，并且将地电位的屏蔽环电极设置在减速电极附近并且沿着绝缘体容器的内壁表面设置，以防止任何放电来自减速电极和接地电极。

8. 发明授权

US4199688A Apparatus for electron beam lithography 失效
标题翻译：电子束光刻设备
公开(公告)号：US4199688A
公开(公告)日：1980-04-22
申请号：US962768
申请日：1978-11-21
申请人： Susumu Ozasa
发明人： Susumu Ozasa
IPC分类号： H01J37/305 , G01Q20/02 , G01Q30/06 , H01J37/21 , H01J37/304 , H01L21/027 , A61K27/02
CPC分类号： H01J37/21 , H01J37/3045
摘要： An apparatus for electron beam lithography for automatically focusing a shaped electron beam uniformly projects an electron beam onto a reference aperture plate having an opening of a prescribed shape. The electron beam in the shape of the opening of the aperture thus obtained is reduced or concentrated and then projected onto a specimen, to thereby project the specimen as a microscopic pattern. The apparatus periodically changes the direction of the electron beam disposed between an electron gun emitting the electron beam and the reference aperture plate, and detects the deviation of the position of the final-image electron beam corresponding to the angle of deflection of the electron beam. The focal distance of a final-stage electron lens is adjusted so as to minimize positional deviation and thereby focus the projected electron beam.
摘要翻译：用于自动聚焦成形电子束的电子束光刻装置将电子束均匀地投射到具有规定形状的开口的参考孔板上。将由此获得的孔的开口形状的电子束减小或浓缩，然后投影到样本上，从而将样本投影为微观图案。设备周期性地改变设置在发射电子束的电子枪和参考孔板之间的电子束的方向，并且检测对应于电子束的偏转角的最终图像电子束的位置的偏差。调整最终级电子透镜的焦距，使位置偏移最小化，从而聚焦投射的电子束。

9. 发明授权

US4801847A Charged particle accelerator using quadrupole electrodes 失效
标题翻译：使用四极电极的带电粒子加速器
公开(公告)号：US4801847A
公开(公告)日：1989-01-31
申请号：US763133
申请日：1985-07-29
申请人： Noriyuki Sakudo , Katsumi Tokiguchi , Hidemi Koike , Osami Okada , Norio Saito , Susumu Ozasa
发明人： Noriyuki Sakudo , Katsumi Tokiguchi , Hidemi Koike , Osami Okada , Norio Saito , Susumu Ozasa
IPC分类号： H01J37/30 , H01J37/317 , H05H7/02 , H05H7/18 , H05H9/00 , H01J25/10
CPC分类号： H05H7/02 , H01J37/3007 , H01J37/3171 , H05H7/18 , H05H9/00
摘要： A charged particle accelerator is provided with quadrupole electrodes with surfaces that are opposed to each other and are undulated, and with an external resonance circuit. The external resonance circuit consists of a capacitor formed by the opposing electrodes, a variable capacitor provided in parallel with said capacitor, and a coil. The resonance frequency is variable. A direct current and an alternating current may be applied in a superposed manner to the quadrupole electrodes. The thus constructed accelerator can be employed for an ion implanter to implant a heavy-current ion beam of several hundred KeV to several MeV.
摘要翻译： PCT No.PCT / JP84 / 00557 Sec。 371日期：1985年7月29日第 102（e）日期1985年7月29日PCT 1984年11月22日PCT公布。公开号WO85 / 02489 日期：1985年6月6日。带电粒子加速器具有四极电极，四极电极具有彼此相对的并且起伏的表面，并具有外部谐振电路。外部谐振电路包括由相对电极形成的电容器，与所述电容器并联设置的可变电容器和线圈。共振频率是可变的。直流电流和交流电可以叠加施加到四极电极。这样构造的加速器可以用于离子注入机，以将几百KeV的大电流离子束注入几MeV。

10. 发明授权

US4933553A Focusing apparatus of electron microscope 失效
标题翻译：电子显微镜聚焦装置
公开(公告)号：US4933553A
公开(公告)日：1990-06-12
申请号：US319670
申请日：1989-03-07
申请人： Junichiro Tomizawa , Susumu Ozasa
发明人： Junichiro Tomizawa , Susumu Ozasa
IPC分类号： H01J37/153 , H01J37/21
CPC分类号： H01J37/21 , H01J37/153
摘要： A focusing apparatus of electron microscope for focusing an electron beam through a focusing lens onto a sample, having a deflecting means for making the electron beam scan on the sample, an astigmatism correcting means of the electron beam, a detecting means for detecting the 2nd electrons from the sample when the sample is scanned by the electron beam, and an optimum exciting current determining means of the focusing lens. The optimum exciting current is obtained by determining the position of the centroid of an area surrounded by a curve Y=f (I) and a fixed straight line. The curve Y shows the relationship between the exciting current for the focusing lens and an electron beam radius corresponding signal which is obtained on the basis of a signal from the detecting means and inversely corresponds to a radius of the electron beam on the surface of the sample.The focusing apparatus enable the exact and simple determination of the optimum exciting current for the focusing lens corresponding to the circle of least confusion.

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