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1. 发明申请

WO2014114003A1 SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CONTROLLER DIE AND METHOD OF MAKING SAME 审中-公开
标题翻译：包括嵌入式控制器的半导体器件及其制造方法
公开(公告)号：WO2014114003A1
公开(公告)日：2014-07-31
申请号：PCT/CN2013/071051
申请日：2013-01-28
申请人： SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.
发明人： KUMAR, Shiv , CHIU, Chin-Tien , QIAN, Kaiyou , YU, Cheeman
IPC分类号： H01L25/00
CPC分类号： H01L25/18 , H01L21/56 , H01L23/13 , H01L23/3121 , H01L23/3128 , H01L24/24 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2224/05554 , H01L2224/24227 , H01L2224/24247 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48482 , H01L2224/49175 , H01L2224/73265 , H01L2224/73267 , H01L2224/82102 , H01L2224/82105 , H01L2224/85 , H01L2225/0651 , H01L2225/06562 , H01L2225/06596 , H01L2924/00014 , H01L2924/12042 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/19105 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor device includes a substrate (102) with a cavity (112) formed therein for receiving a semiconductor die. In examples, the semiconductor die is a controller die (114). The controller die (114) may be electrically connected to the substrate (102) with electrical traces (120) which may be formed for example by printing. After the controller die (114) is electrically connected to the substrate (102), one or more memory die (150) may be affixed to the substrate (102), over the cavity (112) and controller die (114).
摘要翻译：半导体器件包括其中形成有用于接收半导体管芯的空腔（112）的衬底（102）。在示例中，半导体管芯是控制器管芯（114）。控制器管芯（114）可以用例如印刷形成的电迹线（120）电连接到基板（102）。在控制器管芯（114）电连接到衬底（102）之后，一个或多个存储器管芯（150）可以在空腔（112）和控制器管芯（114）上固定到衬底（102）上。

2. 发明申请

WO2014107848A1 SEMICONDUCTOR DEVICE INCLUDING INDEPENDENT FILM LAYER FOR EMBEDDING AND/OR SPACING SEMICONDUCTOR DIE 审中-公开
标题翻译：包括用于嵌入和/或间隔半导体芯片的独立薄膜层的半导体器件
公开(公告)号：WO2014107848A1
公开(公告)日：2014-07-17
申请号：PCT/CN2013/070264
申请日：2013-01-09
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.
发明人： YE, Ning , CHIU, Chin-Tien , UPADHYAYULA, Suresh , FU, Peng , LU, Zhong , YU, Cheeman , ZHANG, Yuang , WANG, Li , RAI, Pradeep Kumar , WANG, Weili , TAI, Enyong , ONG, King Hoo , BOCK, Kim Lee
IPC分类号： H01L25/00 , H01L23/48
CPC分类号： H01L25/18 , H01L23/145 , H01L23/3128 , H01L23/3135 , H01L23/5389 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/743 , H01L24/83 , H01L24/85 , H01L24/92 , H01L25/00 , H01L25/165 , H01L25/50 , H01L2224/05554 , H01L2224/27318 , H01L2224/2732 , H01L2224/27848 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32265 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48228 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/83191 , H01L2224/8385 , H01L2224/83855 , H01L2224/83856 , H01L2224/83986 , H01L2224/85986 , H01L2224/92247 , H01L2225/06562 , H01L2924/00014 , H01L2924/0665 , H01L2924/12042 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/143 , H01L2924/1438 , H01L2924/15311 , H01L2924/181 , H01L2924/19103 , H01L2924/19105 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.
摘要翻译：公开了一种包括多个堆叠半导体管芯的半导体封装以及形成半导体封装的方法。为了减轻控制器管芯上的引线接合要求，控制器管芯可以以不需要引线键合或覆盖在控制器管芯外部的倒装芯片布置直接安装到衬底。此后，可以在控制器管芯周围的衬底上固定隔离层以提供安装一个或多个闪存管芯的水平表面。间隔层可以以各种不同的构造提供。

3. 发明申请

WO2013029273A1 METHODS FOR FORMING COLOR IMAGES ON MEMORY DEVICES AND MEMORY DEVICES FORMED THEREBY 审中-公开
标题翻译：在存储器件和形成的存储器件上形成彩色图像的方法
公开(公告)号：WO2013029273A1
公开(公告)日：2013-03-07
申请号：PCT/CN2011/079283
申请日：2011-09-02
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , FU, Peng , LU, Zhong , CHIU, Chin-Tien , YU, Cheeman , CHEN, Matthew , JIANG, Weiting
发明人： FU, Peng , LU, Zhong , CHIU, Chin-Tien , YU, Cheeman , CHEN, Matthew , JIANG, Weiting
IPC分类号： H01L23/544
CPC分类号： H01L21/565 , H01L21/56 , H01L21/561 , H01L21/566 , H01L23/28 , H01L23/544 , H01L23/552 , H01L24/73 , H01L24/97 , H01L2223/54406 , H01L2223/5442 , H01L2223/54433 , H01L2223/54486 , H01L2224/16225 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2924/1431 , H01L2924/1434 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3025 , H01L2224/81 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A memory device including graphical content and a method of making the memory device with graphical content are disclosed. The graphical content is formed on a release media. The release media and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the graphical content is transferred from the release media to the encapsulated memory device.
摘要翻译：公开了一种包括图形内容的存储设备和使具有图形内容的存储设备的方法。图形内容形成在释放介质上。将释放介质和未封装的存储器件放置在模具中并封装。在模塑料的包封和固化期间，图形内容从释放介质转移到封装的存储器件。

4. 发明申请

WO2013007029A1 CHIP-ON-PACKAGE STRUCTURE FOR MULTIPLE DIE STACKS 审中-公开
标题翻译：多芯片堆叠芯片封装结构
公开(公告)号：WO2013007029A1
公开(公告)日：2013-01-17
申请号：PCT/CN2011/077134
申请日：2011-07-14
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , LIAO, Chih Chin , CHIU, Chin-Tien , YU, Cheeman , UPADHYAYULA, Suresh Kumar , LI, Wen Cheng , LU, Zhong
发明人： LIAO, Chih Chin , CHIU, Chin-Tien , YU, Cheeman , UPADHYAYULA, Suresh Kumar , LI, Wen Cheng , LU, Zhong
IPC分类号： H01L25/065 , H01L25/16 , H01L25/18 , H01L25/00
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2225/06562 , H01L2924/01322 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A multi-die semiconductor device (100) is disclosed. The device (100) may include one or more first-sized dies on a substrate (104) and one or more second-sized dies (126) affixed over the one or more first-sized dies. The second-sized die (126) may have a larger footprint than the first-sized die. An internal molding compound (120) may be provided on the substrate (104) having a footprint the same size as the second-sized die (126). The second-sized die (126) may be supported on the internal molding compound (120). Thereafter, the first and second-sized dies and the internal molding compound (120) may be encapsulated in an external molding compound.
摘要翻译：公开了一种多芯片半导体器件（100）。装置（100）可以包括在一个或多个第一尺寸的模具上的衬底（104）上的一个或多个第一尺寸的模具和一个或多个第二尺寸的模具（126）。第二尺寸的模具（126）可以具有比第一尺寸的模具更大的占地面积。可以在衬底（104）上提供内部模制化合物（120），其具有与第二尺寸模具（126）相同尺寸的足迹。第二尺寸的模具（126）可以被支撑在内部模塑料（120）上。此后，第一和第二尺寸的模具和内部模塑料（120）可以封装在外部模塑料中。

5. 发明申请

WO2012174707A1 DIES PREPEELING APPARATUS AND METHOD 审中-公开
标题翻译： DIES预处理设备和方法
公开(公告)号：WO2012174707A1
公开(公告)日：2012-12-27
申请号：PCT/CN2011/076011
申请日：2011-06-21
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , CHIU, Chin-Tien , TAKIAR, Hem , LIU, Ning , ZHANG, Jidong , LU, Zhong , TAI, Enyong , ELIPARAKKAL, Nadeer
发明人： CHIU, Chin-Tien , TAKIAR, Hem , LIU, Ning , ZHANG, Jidong , LU, Zhong , TAI, Enyong , ELIPARAKKAL, Nadeer
IPC分类号： H01L21/00 , H01L21/67 , H01L21/301
CPC分类号： H01L21/67132
摘要： An apparatus (100) and a method for prepeeling semiconductor dies (212) from a dicing tape (200) with the semiconductor dies (212) attached thereon are disclosed. The apparatus (100) comprises a chamber (110) having a bottom base (112), a top opening (114) and an annular sidewall (116) extended upward from the periphery of the base (112). The sidewall (116) has a substantially flat top surface. The apparatus (100) further comprises a cover (120) disposed above the chamber (110). The cover (120) has a central opening. The apparatus (100) further comprises at least one inlet (118) disposed in the base (112) and a pressure regulator (150) connected to the chamber (110) via the at least one inlet (118). The dicing tape (200) is disposed between the cover (120) and the top surface of the sidewall (116) to hermetically seal the top opening (114) of the chamber (110). The semiconductor dies (212) are located directly above the top opening (114) of the chamber (110).
摘要翻译：公开了一种从半导体管芯（212）上附着的切割带（200）引出半导体管芯（212）的装置（100）和方法。设备（100）包括具有底部基座（112），顶部开口（114）和从基部（112）的周边向上延伸的环形侧壁（116）的腔室（110）。侧壁（116）具有基本平坦的顶表面。设备（100）还包括设置在室（110）上方的盖（120）。盖（120）具有中心开口。设备（100）还包括设置在基座（112）中的至少一个入口（118）和经由至少一个入口（118）连接到腔室（110）的压力调节器（150）。切割带（200）设置在盖（120）和侧壁（116）的顶表面之间，以密封腔室（110）的顶部开口（114）。半导体管芯（212）位于腔室（110）的顶部开口（114）的正上方。

6. 发明申请

WO2013159307A1 SEMICONDUCTOR DEVICE INCLUDING ELECTROMAGNETIC ABSORPTION AND SHIELDING 审中-公开
标题翻译：包括电磁吸收和屏蔽的半导体器件
公开(公告)号：WO2013159307A1
公开(公告)日：2013-10-31
申请号：PCT/CN2012/074737
申请日：2012-04-26
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , HUANG, Dacheng , BAI, Ye , QIAN, Kaiyou , CHIU, Chin-Tien
发明人： HUANG, Dacheng , BAI, Ye , QIAN, Kaiyou , CHIU, Chin-Tien
IPC分类号： H01L23/552 , H05K9/00 , H05K1/02 , H05K3/46 , H01L27/02
CPC分类号： H01L21/56 , H01L23/295 , H01L23/3135 , H01L23/49811 , H01L23/49894 , H01L23/552 , H01L24/06 , H01L24/48 , H01L24/49 , H01L24/97 , H01L25/0657 , H01L25/18 , H01L2224/04042 , H01L2224/05554 , H01L2224/06155 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/49113 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06537 , H01L2225/06562 , H01L2924/00014 , H01L2924/12042 , H01L2924/1433 , H01L2924/1434 , H01L2924/1438 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3025 , H05K1/0218 , H05K1/0298 , H05K3/3452 , H05K2201/0215 , H05K2201/083 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.
摘要翻译：公开了一种半导体器件，其包括用于吸收EMI和/或RFI的材料。该器件包括衬底（202），一个或多个半导体管芯（224,225）以及围绕该一个或多个半导体管芯（224,225）的模制化合物。用于吸收EMI和/或RFI的材料可以设置在衬底（202）上的焊料掩模层（210）内或上。该装置还可以包括围绕模制化合物的EMI / RFI吸收材料并与衬底上的EMI / RFI吸收材料接触，以将EMI / RFI吸收材料中的一个或多个半导体芯片完全封闭。

7. 发明申请

WO2013155681A1 SLOPE DIE STACK 审中-公开
标题翻译：斜坡堆叠
公开(公告)号：WO2013155681A1
公开(公告)日：2013-10-24
申请号：PCT/CN2012/074255
申请日：2012-04-18
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , CHIU, Chin-Tien , YU, Cheeman , LU, Zhong , YU, Fen , WANG, Xu
发明人： CHIU, Chin-Tien , YU, Cheeman , LU, Zhong , YU, Fen , WANG, Xu
IPC分类号： H01L25/00
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/73265 , H01L2224/92247 , H01L2225/06506 , H01L2225/06562 , H01L2924/00012
摘要： A semiconductor device comprises a substrate and at least two groups of semiconductor dies stacked above the substrate. Each group of semiconductor dies includes at least a bottom and a top semiconductor die. Each semiconductor die comprises at least one bonding pad aligned along a first edge of the semiconductor die. The at least two groups of semiconductor dies comprise an underlying group of semiconductor dies and an overlying group of semiconductor dies. The bottom semiconductor die of the underlying group is disposed on the substrate while the bottom semiconductor die of the overlying group is disposed directly on the top semiconductor die of the underlying group. Within each group, the first edge of the top semiconductor die is offset from the first edge of the bottom semiconductor die by a group offset length in a first direction. The first edge of the bottom semiconductor die of the overlying group is shifted from the first edge of the bottom semiconductor die of the underlying group by a shift length Lshift in the first direction. The group offset length Lgoffset of the underlying group is greater than or equal to the shift length Lshift of the overlying group.
摘要翻译：半导体器件包括衬底和堆叠在衬底上的至少两组半导体管芯。每组半导体管芯至少包括底部和顶部半导体管芯。每个半导体管芯包括沿着半导体管芯的第一边缘对准的至少一个接合焊盘。所述至少两组半导体管芯包括下面的半导体管芯组和半导体管芯的上覆组。下面的组的底部半导体管芯设置在衬底上，而覆盖组的底部半导体管芯直接设置在下面的组的顶部半导体管芯上。在每个组内，顶部半导体管芯的第一边缘沿着第一方向偏离第一半导体管芯的第一边缘的组偏移长度。覆盖组的底部半导体管芯的第一边缘从第一方向的移位长度Lshift移位到下层组的底部半导体管芯的第一边缘。基础组的组偏移长度Lgoffset大于或等于上覆组的移位长度Lshift。

8. 发明申请

WO2014131152A1 SEMICONDUCTOR DEVICE INCLUDING ALTERNATING STEPPED SEMICONDUCTOR DIE STACKS 审中-公开
标题翻译：半导体器件，包括替代步进半导体器件堆叠
公开(公告)号：WO2014131152A1
公开(公告)日：2014-09-04
申请号：PCT/CN2013/071881
申请日：2013-02-26
申请人： SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.
发明人： KUMAR, Shiv , CHIU, Chin-Tien , HUANG, Dacheng , LU, Zhong , JI, Zhongli
IPC分类号： H01L25/065 , H01L23/49
CPC分类号： H01L25/0657 , H01L23/3107 , H01L23/49816 , H01L23/49827 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/95 , H01L25/50 , H01L2224/05554 , H01L2224/2919 , H01L2224/2929 , H01L2224/32145 , H01L2224/32225 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/49175 , H01L2224/49429 , H01L2224/78301 , H01L2224/8314 , H01L2224/83856 , H01L2224/85045 , H01L2224/85205 , H01L2224/85207 , H01L2224/9222 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2225/06572 , H01L2924/12042 , H01L2924/1438 , H01L2924/181 , H01L2924/00014 , H01L2924/0665 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.
摘要翻译：一种半导体器件，包括交替的阶梯型半导体管芯堆叠，以允许使用短引线键在半导体器件内提供大量的半导体管芯。

9. 发明申请

WO2013166641A1 SEMICONDUCTOR DIE LAMINATING DEVICE WITH INDEPENDENT DRIVES 审中-公开
标题翻译：具有独立驱动器的半导体封装设备
公开(公告)号：WO2013166641A1
公开(公告)日：2013-11-14
申请号：PCT/CN2012/075126
申请日：2012-05-07
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , GU, Wei , LU, Zhong , YU, Cheeman , CHIU, Chin-Tien , TAI, En-Yong , NI, Min
发明人： GU, Wei , LU, Zhong , YU, Cheeman , CHIU, Chin-Tien , TAI, En-Yong , NI, Min
IPC分类号： H01L21/67
CPC分类号： H01L24/75 , H01L21/561 , H01L21/565 , H01L23/3107 , H01L23/3121 , H01L23/544 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L2223/5442 , H01L2223/54426 , H01L2223/54486 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/49 , H01L2224/73265 , H01L2224/753 , H01L2224/75301 , H01L2224/75702 , H01L2224/75753 , H01L2224/7598 , H01L2224/83132 , H01L2224/83193 , H01L2224/83203 , H01L2224/83856 , H01L2224/83862 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/12042 , H01L2924/181 , H01L2224/83 , H01L2924/00012 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A laminating device (230) and method are disclosed for laminating semiconductor die (220) on substrates on a panel (200) of substrates. The laminating device (230) includes lamination units (234,236,238,240) that operate independently of each other so that a row or column of semiconductor die (220) may be independently laminated onto a row or column of substrates simultaneously.
摘要翻译：公开了用于将基板上的半导体管芯（220）层压在基板（200）上的层压装置（230）和方法。层压装置（230）包括层叠单元（234,236,238,240），其彼此独立地操作，使得半导体管芯（220）的行或列可以独立地层压到基板的行或列上。

10. 发明申请

WO2012045246A1 PRE-TREATMENT OF MEMORY CARDS FOR BINDING GLUE AND OTHER CURABLE FLUIDS 审中-公开
标题翻译：预处理用于结合玻璃和其他可固化流体的记忆卡
公开(公告)号：WO2012045246A1
公开(公告)日：2012-04-12
申请号：PCT/CN2011/075434
申请日：2011-06-08
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , POMERANTZ, Itzhak , KUMAR, Shiv , MILLER, Robert , CHIU, Chin-Tien , FU, Peng , YU, Cheeman , TAKIAR, Hem , TUNG, Chih-Chiang , QIAN, Kaiyou , YAIRI, Rahav
发明人： POMERANTZ, Itzhak , KUMAR, Shiv , MILLER, Robert , CHIU, Chin-Tien , FU, Peng , YU, Cheeman , TAKIAR, Hem , TUNG, Chih-Chiang , QIAN, Kaiyou , YAIRI, Rahav
IPC分类号： G06K19/07
CPC分类号： H05K5/0252 , G06K19/07 , Y10T428/239 , Y10T428/24479 , Y10T428/2457 , Y10T428/24802
摘要： A memory device is disclosed including at least one surface pre-treated to roughen the surface for better adhesion of a curable fluid such as glue or ink on the surface. The surface of the memory device may be pre-treated by scoring lines in the surface with a laser or by forming discrete deformations with a particle blaster. The surface may also be roughened by providing a roughened pattern on a mold plate during an encapsulation process. In further examples, the surface may be chemically pre-treated to roughen the surface and/or increase the adhesion energy of the surface.
摘要翻译：公开了一种记录装置，其包括至少一个经过预处理的表面以粗糙化表面，以便在表面上更好地粘附诸如胶水或墨水的可固化流体。存储器件的表面可以通过用激光在表面上刻划线或者通过用粒子喷射器形成离散的变形来预处理。在封装过程中，通过在模板上提供粗糙图案也可以使表面粗糙化。在另外的实施例中，表面可以被化学预处理以使表面粗糙化和/或增加表面的粘附能。

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