A semiconductor device comprises a substrate and at least two groups of semiconductor dies stacked above the substrate. Each group of semiconductor dies includes at least a bottom and a top semiconductor die. Each semiconductor die comprises at least one bonding pad aligned along a first edge of the semiconductor die. The at least two groups of semiconductor dies comprise an underlying group of semiconductor dies and an overlying group of semiconductor dies. The bottom semiconductor die of the underlying group is disposed on the substrate while the bottom semiconductor die of the overlying group is disposed directly on the top semiconductor die of the underlying group. Within each group, the first edge of the top semiconductor die is offset from the first edge of the bottom semiconductor die by a group offset length in a first direction. The first edge of the bottom semiconductor die of the overlying group is shifted from the first edge of the bottom semiconductor die of the underlying group by a shift length Lshift in the first direction. The group offset length Lgoffset of the underlying group is greater than or equal to the shift length Lshift of the overlying group.