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    • 2. 发明申请
    • RESISTIVE MEMS HUMIDITY SENSOR
    • 电阻式MEMS湿度传感器
    • WO2014099915A1
    • 2014-06-26
    • PCT/US2013/075677
    • 2013-12-17
    • ROBERT BOSCH GMBHFEYH, AndoGRAHAM, AndrewSAMARAO, AshwinYAMA, GaryO'BRIEN, Gary
    • FEYH, AndoGRAHAM, AndrewSAMARAO, AshwinYAMA, GaryO'BRIEN, Gary
    • G01N27/12
    • G01N27/121
    • A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
    • 半导体器件包括衬底,设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。 感测膜在绝缘膜上的第一位置和第二位置之间限定至少一个导电路径。 第一电路连接在绝缘层上的第一位置处电连接到感测膜,并且第二电路连接在第二位置电连接到感测膜。 控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。 感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。
    • 8. 发明申请
    • SURFACE CHARGE MITIGATION LAYER FOR MEMS SENSORS
    • MEMS传感器的表面电荷减缓层
    • WO2014070930A2
    • 2014-05-08
    • PCT/US2013/067576
    • 2013-10-30
    • ROBERT BOSCH GMBHGRAHAM, AndrewFEYH, AndoO'BRIEN, Gary
    • GRAHAM, AndrewFEYH, AndoO'BRIEN, Gary
    • B81B7/0064B81B2201/0264H01L29/72
    • A semiconductor device includes a substrate. At least one transducer is provided on the substrate. The at least one transducer includes at least one electrically conductive circuit element. A dielectric layer is deposited onto the substrate over the at least one transducer. A surface charge mitigation layer formed of a conductive material is deposited onto the outer surface of the dielectric layer with the surface charge mitigation layer being electrically coupled to ground potential. The surface charge mitigation layer may be deposited to a thickness of 10nm or less, and the transducer may comprise a microelectromechanical systems (MEMS) device, such as a MEMS pressure sensor. The surface charge mitigation layer may be patterned to include pores to enhance the flexibility as well as the optical properties of the mitigation layer.
    • 半导体器件包括衬底。 在基板上设置至少一个换能器。 至少一个换能器包括至少一个导电电路元件。 介电层通过至少一个换能器沉积到衬底上。 由导电材料形成的表面电荷缓解层沉积在电介质层的外表面上,其中表面电荷缓解层与地电位电耦合。 表面电荷缓解层可以沉积到10nm或更小的厚度,并且换能器可以包括诸如MEMS压力传感器的微机电系统(MEMS)装置。 表面电荷缓解层可以被图案化以包括孔,以增强缓解层的柔性以及光学特性。