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1. 发明申请

WO0038286A9 ArF LASER WITH LOW PULSE ENERGY AND HIGH REP RATE 审中-公开
标题翻译：具有低脉冲能量和高反射率的ArF激光
公开(公告)号：WO0038286A9
公开(公告)日：2002-08-29
申请号：PCT/US9929682
申请日：1999-12-13
申请人： CYMER INC , BESAUCELE HERVE A , HUEBER JEAN-MARC , ERSHOV ALEXANDER I , HOFMANN THOMAS , FLEUROV VLADIMIR B
发明人： BESAUCELE HERVE A , HUEBER JEAN-MARC , ERSHOV ALEXANDER I , HOFMANN THOMAS , FLEUROV VLADIMIR B
IPC分类号： G03F7/20 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/223 , H01S3/225 , H01S3/22
CPC分类号： G03F7/70025 , G03F7/70041 , G03F7/70558 , G03F7/70575 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/223 , H01S3/225
摘要： A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse repetition energies in the range of about 2mJ to 5mJ or greater with a full width half maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 mu m (100nm) or less, replaceable modules include a laser chamber (80); a modular pulse power system; and a line narrowing module (86) for a given laser power output. The higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.
摘要翻译：一种可靠的模块化生产质量的ArF准分子激光器，其能够以3,000至4,000Hz或更大的重复频率产生激光脉冲，脉冲重复能量在约2mJ至5mJ或更大的范围内，全宽度半最大带宽约为0.4 pm以下，剂量稳定性小于0.4％。使用该激光器作为照明源，步进器或扫描仪设备可以产生0.10μm（100nm）或更小的集成电路分辨率，可更换模块包括激光室（80）; 模块式脉冲电源系统; 以及用于给定激光功率输出的线窄模块（86）。较高的重复率提供了两个重要的优点。较低的每脉冲能量意味着更少的光学损伤，并且指定照射剂量的较大数量的脉冲表示更好的剂量稳定性。

2. 发明申请

WO2006039157A2 MULTI-CHAMBERED EXCIMER OR MOLECULAR FLUORINE GAS DISCHARGE LASER FLUORINE INJECTION CONTROL 审中-公开
标题翻译：多层离子注射器或分子荧光体排放激光器氟注射控制
公开(公告)号：WO2006039157A2
公开(公告)日：2006-04-13
申请号：PCT/US2005/033754
申请日：2005-09-19
申请人： CYMER, INC. , BESAUCELE, Herve, A. , DUNSTAN, Wayne, J. , ISHIHARA, Toshihiko , JACQUES, Robert, N. , TRINTCHOUK, Fedor, B.
发明人： BESAUCELE, Herve, A. , DUNSTAN, Wayne, J. , ISHIHARA, Toshihiko , JACQUES, Robert, N. , TRINTCHOUK, Fedor, B.
IPC分类号： H01S3/22 , H01S3/223
CPC分类号： H01S3/036 , H01S3/225 , H01S3/2316 , H01S3/2366
摘要： A multi-chambered excimer or molecular halogen gas discharge laser system comprising at least one oscillator chamber and at least one amplifier chamber producing oscillator output laser light pulses that are amplified in the at least one power chamber, having a fluorine injection control system and a method of using same is disclosed, which may comprise: a halogen gas consumption estimator: estimating the amount of halogen gas that has been consumed in one of the at least one oscillator chamber based upon at least a first operating parameter of one of the least one oscillator chamber and the at least one amplifier chamber, and the difference between a second operating parameter of the at least one oscillator chamber and the at least one amplifier chamber, and estimating the amount of halogen gas that has been consumed in the other of the at least one oscillator chamber and the at least one amplifier chamber based upon at least a third operating parameter of the other of the at least one oscillator chamber and the at least one amplifier chamber, and producing an output representative of an estimated halogen gas consumption in the at least one oscillator chamber and of the halogen gas consumption in the at least one amplifier chamber, and a halogen gas injection controller determining the amount of halogen gas injection for the at least one oscillator chamber and the at least one amplifier chamber based upon the estimated fluorine consumption outputs from the fluorine consumption estimator and a cost function comprising a plurality of weighted injection decision determinations.
摘要翻译：一种多腔准分子或分子卤素气体放电激光系统，包括至少一个振荡器室和至少一个产生振荡器的放大器室输出在至少一个功率室中放大的激光脉冲，具有氟注入控制系统和方法其中可以包括：卤素气体消耗估计器：基于至少一个振荡器之一的至少一个振荡器中的至少一个振荡器的至少一个振荡器的至少第一操作参数来估计在所述至少一个振荡器腔中的一个中消耗的卤素气体的量室和至少一个放大器室，以及所述至少一个振荡器室和所述至少一个放大器室的第二操作参数之间的差异，以及估计至少在另一个中消耗的卤素气体的量基于所述至少一个的另一个的至少第三操作参数，一个振荡器室和所述至少一个放大器室 e振荡器室和所述至少一个放大器室，并且产生代表所述至少一个振荡器室中的估计的卤素气体消耗量的输出和所述至少一个放大器室中的卤素气体消耗量，以及卤素气体注入控制器确定基于来自氟消耗估计器的估计的氟消耗量输出和包括多个加权喷射判定确定的成本函数，至少一个振荡室和至少一个放大器室的卤素气体喷射量。

3. 发明申请

WO0038286A8 ArF LASER WITH LOW PULSE ENERGY AND HIGH REP RATE 审中-公开
标题翻译：具有低脉冲能量和高反射率的ArF激光
公开(公告)号：WO0038286A8
公开(公告)日：2001-07-12
申请号：PCT/US9929682
申请日：1999-12-13
申请人： CYMER INC , BESAUCELE HERVE A , HUEBER JEAN MARC , ERSHOV ALEXANDER I , HOFMANN THOMAS , FLEUROV VLADIMIR B
发明人： BESAUCELE HERVE A , HUEBER JEAN-MARC , ERSHOV ALEXANDER I , HOFMANN THOMAS , FLEUROV VLADIMIR B
IPC分类号： G03F7/20 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/223 , H01S3/225 , H01S3/22
CPC分类号： G03F7/70025 , G03F7/70041 , G03F7/70558 , G03F7/70575 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/223 , H01S3/225
摘要： A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse repetition energies in the range of about 2mJ to 5mJ or greater with a full width half maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 mu m (100nm) or less, replaceable modules include a laser chamber (80); a modular pulse power system; and a line narrowing module (86) for a given laser power output. The higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.
摘要翻译：一种可靠的模块化生产质量的ArF准分子激光器，其能够以3,000至4,000Hz或更大的重复频率产生激光脉冲，脉冲重复能量在约2mJ至5mJ或更大的范围内，全宽度半最大带宽约为0.4 pm以下，剂量稳定性小于0.4％。使用该激光器作为照明源，步进器或扫描仪设备可以产生0.10μm（100nm）或更小的集成电路分辨率，可更换模块包括激光室（80）; 模块式脉冲电源系统; 以及用于给定激光功率输出的线窄模块（86）。较高的重复率提供了两个重要的优点。较低的每脉冲能量意味着更少的光学损伤，并且指定照射剂量的较大数量的脉冲表示更好的剂量稳定性。

4. 发明申请

WO9919950A8 PULSE ENERGY CONTROL FOR EXCIMER LASER 审中-公开
标题翻译：激光激光的脉冲能量控制
公开(公告)号：WO9919950A8
公开(公告)日：1999-06-24
申请号：PCT/US9818138
申请日：1998-09-01
申请人： CYMER INC , SANDSTROM RICHARD L , BESAUCELE HERVE A , FOMENKOV IGOR V , DAS PALASH P
发明人： SANDSTROM RICHARD L , BESAUCELE HERVE A , FOMENKOV IGOR V , DAS PALASH P
IPC分类号： G03F7/20 , H01S3/03 , H01S3/036 , H01S3/08 , H01S3/134 , H01S3/137 , H01S3/225 , H01S3/18
CPC分类号： G03F7/70025 , G03F7/70041 , G03F7/70216 , G03F7/70558 , G03F7/70575 , H01S3/03 , H01S3/036 , H01S3/08009 , H01S3/134 , H01S3/225 , H01S3/2251 , H01S3/2256
摘要： A process for controlling pulse energy in burst of pulses produced by an excimer laser. The energy of each pulse in each burst is measured. The rate of change of pulse energy with charging voltage is determined. A pulse energy error is determined for a previous pulse of the present burst. An integrated dose error is also determined for all previous pulses in the current burst. A charging voltage for the next pulse is determined using the pulse energy error, the integrated dose error, the rate of change of energy with charging voltage and a reference voltage. In a preferred embodiment, the rate of change of energy with voltage is determined by dithering the voltage during two pulses of each burst, once lower and once higher. The reference voltage is a voltage calculated using prior voltage and energy data. In this embodiment the method of determining the reference voltage during a first portion of the pulse is different from the method used during a latter portion of the burst. During the first set of pulses, for each pulse, (40 in this embodiment) a specified voltage calculated using voltage and energy data from a corresponding pulse in a previous burst is utilized as a prediction of the voltage needed to produce a pulse energy converging on a target pulse energy. For pulses (41) and thereafter the reference voltage for each pulse is the specified voltage for the previous pulse.
摘要翻译：用于通过准分子激光器产生的脉冲脉冲串来控制脉冲能量的过程。测量每个脉冲中每个脉冲的能量。确定脉冲能量随充电电压的变化率。针对当前脉冲串的先前脉冲确定脉冲能量误差。还针对当前突发中的所有先前脉冲确定积分剂量误差。使用脉冲能量误差，积分剂量误差，带充电电压的能量变化率和参考电压来确定下一个脉冲的充电电压。在优选实施例中，通过在每个脉冲串的两个脉冲期间抖动电压来确定能量与电压的变化率，一次较低和一次更高。参考电压是使用先前的电压和能量数据计算的电压。在该实施例中，在脉冲的第一部分期间确定参考电压的方法与在脉冲串的后一部分期间使用的方法不同。在第一组脉冲期间，对于每个脉冲（在本实施例中为40）使用来自先前脉冲串中的相应脉冲的电压和能量数据计算的指定电压被用作产生脉冲能量收敛所需的电压的预测目标脉冲能量。对于脉冲（41），此后每个脉冲的参考电压是先前脉冲的指定电压。

5. 发明申请

WO2008105988A3 LASER GAS INJECTION SYSTEM 审中-公开
公开(公告)号：WO2008105988A3
公开(公告)日：2008-09-04
申请号：PCT/US2008/001348
申请日：2008-02-01
申请人： CYMER, INC , DUNSTAN, Wayne, J. , O'BRIEN, Kevin, M. , JACQUES, Robert, N. , BESAUCELE, Herve, A. , RIGGS, Daniel, J. , RATNAM, Aravind
发明人： DUNSTAN, Wayne, J. , O'BRIEN, Kevin, M. , JACQUES, Robert, N. , BESAUCELE, Herve, A. , RIGGS, Daniel, J. , RATNAM, Aravind
IPC分类号： H01S3/22
摘要： A method and apparatus are disclosed which may comprise predicting the gas lifetime for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas may comprise: utilizing at least one of a plurality of laser operating Input and/or output parameters; utilizing a set of at least one parameter of utilization in the photolithography process to determine a gas use model in relation to the respective input or output parameter; predicting the end of gas life based upon the mod and a measurement of the respective input or output parameter. The parameter may comprise a pulse utilization pattern.

6. 发明申请

WO2003021728A2 VERY NARROW BAND, TWO CHAMBER, HIGH REP RATE GAS DISCHARGE LASER SYSTEM 审中-公开
标题翻译：非常窄带，两个室，高倍率气体放电激光系统
公开(公告)号：WO2003021728A2
公开(公告)日：2003-03-13
申请号：PCT/US2002/027925
申请日：2002-08-28
申请人： CYMER, INC. (a Nevada corporation) , KNOWLES, David, S. , BROWN, Daniel, J., W. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , SANDSTROM, Richard, L. , DAS, Plash, P. , ANDERSON, Stuart, L. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , ONKELS, Eckehard, D. , NESS, Richard, M. , SMITH, Scott, T. , HULBURD, William, G. , OICLES, Jeffrey
发明人： KNOWLES, David, S. , BROWN, Daniel, J., W. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , SANDSTROM, Richard, L. , DAS, Plash, P. , ANDERSON, Stuart, L. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , ONKELS, Eckehard, D. , NESS, Richard, M. , SMITH, Scott, T. , HULBURD, William, G. , OICLES, Jeffrey
IPC分类号： H01S
CPC分类号： G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要： An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
摘要翻译：一种注射种子模块化气体放电激光系统，其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。提供两个单独的放电室，其中之一是主振荡器的一部分，其产生在第二放电室中放大的非常窄的带状晶体束。可以单独控制室，允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。配置为MOPA并被专门用于集成电路光刻的光源的ArF准分子激光系统中的优选实施例。在优选的MOPA实施例中，每个腔室包括单个切向风扇，其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。主振荡器配备有具有非常快的调谐镜的线窄化封装，能够以4000Hz或更高的重复频率在脉冲到脉冲的基础上控制中心线波长，精度低于0.2μm。

7. 发明申请

WO2003021727A3 LINE SELECTED F¿2? TWO CHAMBER LASER SYSTEM 审中-公开
公开(公告)号：WO2003021727A3
公开(公告)日：2003-03-13
申请号：PCT/US2002/026394
申请日：2002-08-19
申请人： CYMER, INC, , KNOWLES, David, S. , BROWN, Daniel, J., W. , SANDSTROM, Richard, L. , RYLOV, German, E. , ONKELS, Eckehard, D. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , NESS, Richard, M. , SMITH, Scot, T. , HULBURD, William, G.
发明人： KNOWLES, David, S. , BROWN, Daniel, J., W. , SANDSTROM, Richard, L. , RYLOV, German, E. , ONKELS, Eckehard, D. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , NESS, Richard, M. , SMITH, Scot, T. , HULBURD, William, G.
IPC分类号： H01S3/11
摘要： An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The masters oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength an a pulse to pulse basis at repetition rates of 4,000 Hz or greater to precision of less that 0.2 pm.

8. 发明申请

WO2003021727A2 LINE SELECTED F2 TWO CHAMBER LASER SYSTEM 审中-公开
标题翻译：线选择F2两室激光系统
公开(公告)号：WO2003021727A2
公开(公告)日：2003-03-13
申请号：PCT/US2002/026394
申请日：2002-08-19
申请人： CYMER, INC, , KNOWLES, David, S. , BROWN, Daniel, J., W. , SANDSTROM, Richard, L. , RYLOV, German, E. , ONKELS, Eckehard, D. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , NESS, Richard, M. , SMITH, Scot, T. , HULBURD, William, G.
发明人： KNOWLES, David, S. , BROWN, Daniel, J., W. , SANDSTROM, Richard, L. , RYLOV, German, E. , ONKELS, Eckehard, D. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , NESS, Richard, M. , SMITH, Scot, T. , HULBURD, William, G.
IPC分类号： H01S
CPC分类号： H01S3/2366 , G01J9/00 , G03F7/70025 , G03F7/70041 , G03F7/70575 , G03F7/70933 , H01S3/0057 , H01S3/0071 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1305 , H01S3/134 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333
摘要： An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F 2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F 2 spectral line.
摘要翻译：一种注射种子模块化气体放电激光系统，其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。提供两个单独的放电室，其中之一是主振荡器的一部分，其产生在第二放电室中放大的非常窄的带状晶体束。可以单独控制室，允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。配置为MOPA并被专门设计用作集成电路光刻的光源的F2激光系统中的优选实施例。在优选的MOPA实施例中，每个腔室包括单个切向风扇，其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。主振荡器配有一个线选择包，用于选择最强的F2谱线。

9. 发明申请

WO2000038286A1 ArF LASER WITH LOW PULSE ENERGY AND HIGH REP RATE 审中-公开
标题翻译：具有低脉冲能量和高反射率的ArF激光
公开(公告)号：WO2000038286A1
公开(公告)日：2000-06-29
申请号：PCT/US1999/029682
申请日：1999-12-13
申请人： CYMER, INC. , BESAUCELE, Herve, A. , HUEBER, Jean-Marc , ERSHOV, Alexander, I. , HOFMANN, Thomas , FLEUROV, Vladimir, B.
发明人： BESAUCELE, Herve, A. , HUEBER, Jean-Marc , ERSHOV, Alexander, I. , HOFMANN, Thomas , FLEUROV, Vladimir, B.
IPC分类号： H01S3/22
CPC分类号： G03F7/70025 , G03F7/70041 , G03F7/70558 , G03F7/70575 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/223 , H01S3/225
摘要： A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse repetition energies in the range of about 2mJ to 5mJ or greater with a full width half maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 μm (100nm) or less, replaceable modules include a laser chamber (80); a modular pulse power system; and a line narrowing module (86) for a given laser power output. The higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.
摘要翻译：一种可靠的模块化生产质量的ArF准分子激光器，其能够以3,000至4,000Hz或更大的重复频率产生激光脉冲，脉冲重复能量在约2mJ至5mJ或更大的范围内，全宽度半最大带宽约为0.4 pm以下，剂量稳定性小于0.4％。使用该激光器作为照明源，步进器或扫描仪设备可以产生0.10μm（100nm）或更小的集成电路分辨率，可更换模块包括激光室（80）; 模块式脉冲电源系统; 以及用于给定激光功率输出的线窄模块（86）。较高的重复率提供了两个重要的优点。较低的每脉冲能量意味着更少的光学损伤，并且指定照射剂量的较大数量的脉冲表示更好的剂量稳定性。

10. 发明申请

WO2008105988A2 LASER GAS INJECTION SYSTEM 审中-公开
标题翻译：激光喷射系统
公开(公告)号：WO2008105988A2
公开(公告)日：2008-09-04
申请号：PCT/US2008001348
申请日：2008-02-01
申请人： CYMER INC , DUNSTAN WAYNE J , O'BRIEN KEVIN M , JACQUES ROBERT N , BESAUCELE HERVE A , RIGGS DANIEL J , RATNAM ARAVIND
发明人： DUNSTAN WAYNE J , O'BRIEN KEVIN M , JACQUES ROBERT N , BESAUCELE HERVE A , RIGGS DANIEL J , RATNAM ARAVIND
IPC分类号： H01S3/22
CPC分类号： H01S3/036 , G03F7/70025 , G03F7/70525 , G03F7/70975 , H01S3/0014 , H01S3/1305 , H01S3/1306 , H01S3/134 , H01S3/2251 , H01S3/2256
摘要： A method and apparatus are disclosed which may comprise predicting the gas lifetime for a gas discharge laser light source for a photolithography process, the light source comprising a halogen contaim'ng lasing gas may comprise: utilizing at least one of a plurality of laser operating input and/or output parameters; utilizing a set of at least one parameter of utilization in the photolithography process to determine a gas use model in relation to the respective input or output parameter; predicting the end of gas life based upon the model and a measurement of the respective input or output parameter. The parameter may comprise a pulse utilization pattern. The method and apparatus may comprise performing gas management for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas comprising: utilizing periodic and frequent partial gas refills comprising an inject comprising a mixture of halogen gas and bulk gas in generally the same ration as the premix ratio provided to the laser in a full gas refill, and in an amount less than two percent of the total gas pressure prior to the injection.
摘要翻译：公开了一种可以包括预测用于光刻工艺的气体放电激光源的气体寿命的方法和装置，包括卤素阻挡激光气体的光源可以包括：利用多个激光操作输入中的至少一个和/或输出参数; 在光刻工艺中利用一组至少一个利用参数来确定相对于相应的输入或输出参数的气体使用模型; 根据模型和相应的输入或输出参数的测量来预测气体寿命的结束。该参数可以包括脉冲利用模式。该方法和装置可以包括对用于光刻工艺的气体放电激光光源执行气体管理，该光源包括含卤素的激光气体，其包括：利用周期性和频繁的部分气体再填充，其包括含有卤素气体和体积的混合物气体通常与在全气体再填充中提供给激光器的预混合比率相同，并且其量小于注射前总气体压力的2％。

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