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    • 53. 发明申请
    • ELECTRONIC DEVICE HAVING AN INTERFACE SUPPORTED TESTING MODE
    • 具有接口支持测试模式的电子设备
    • WO2007022446A3
    • 2009-04-23
    • PCT/US2006032416
    • 2006-08-17
    • INAPAC TECHNOLOGY INCONG ADRIAN
    • ONG ADRIAN
    • G01R31/26
    • G01R31/318513G01R31/31701G01R31/3172G01R31/31723G01R31/319G11C29/1201G11C29/48G11C2029/0401H01L2224/05554H01L2224/48139
    • A system is provided for testing a first integrated circuit chip associated with at least a second integrated circuit chip in a semiconductor device, wherein at least some external terminals for the semiconductor device are to be shared by the first and second integrated circuit chips, and wherein the first integrated circuit chip is designed for normal operation and a test mode. The system includes a plurality of multiplexer circuits. Each multiplexer circuit is operable to receive a respective signal from the second integrated circuit chip when the first integrated circuit chip is in normal operation. Each multiplexer circuit is further operable to receive a respective signal from either the second integrated circuit chip or an associated external terminal when the first integrated circuit chip is in test mode. An external terminal of the semiconductor device operable to receive a signal for causing the first integrated circuit chip to transition between normal operation and the test mode.
    • 提供了一种用于测试与半导体器件中的至少第二集成电路芯片相关联的第一集成电路芯片的系统,其中半导体器件的至少一些外部端子将被第一和第二集成电路芯片共享,并且其中 第一个集成电路芯片设计用于正常操作和测试模式。 该系统包括多个多路复用器电路。 当第一集成电路芯片处于正常操作时,每个复用器电路可操作以从第二集成电路芯片接收相应的信号。 当第一集成电路芯片处于测试模式时,每个复用器电路还可操作以从第二集成电路芯片或相关联的外部端子接收相应的信号。 半导体器件的外部端子可操作以接收用于使第一集成电路芯片在正常操作和测试模式之间转变的信号。
    • 55. 发明申请
    • METHOD AND DEVICE FOR TESTING MEMORY
    • 用于测试记忆的方法和装置
    • WO2008076912A1
    • 2008-06-26
    • PCT/US2007/087625
    • 2007-12-14
    • QUALCOMM IncorporatedSHEN, JianBASSETT, Paul
    • SHEN, JianBASSETT, Paul
    • G11C29/48
    • G11C29/48G11C29/1201
    • A method of testing a memory is provided that includes initiating a test on a computer readable memory. The computer readable memory provides output data associated with the test. Further, the method includes selecting to receive the output data from a first register or a second register. In a particular embodiment, the method may include selecting to receive the output data from the first register or the second register by use of a control line. In another particular embodiment, the method may include selecting to receive the RAM input data from the first register or the second register by use of a control line. The control line is configured dynamically by hardware or software on cycle by cycle basis. In a particular embodiment, the test is a built-in-self-test (BIST).
    • 提供了一种测试存储器的方法,其包括在计算机可读存储器上启动测试。 计算机可读存储器提供与测试相关联的输出数据。 此外,该方法包括选择从第一寄存器或第二寄存器接收输出数据。 在特定实施例中,该方法可以包括通过使用控制线来选择从第一寄存器或第二寄存器接收输出数据。 在另一特定实施例中,该方法可以包括通过使用控制线来选择从第一寄存器或第二寄存器接收RAM输入数据。 控制线由硬件或软件逐周期动态配置。 在特定实施例中,测试是内置自检(BIST)。
    • 57. 发明申请
    • MEMORY SCAN TESTING
    • 内存扫描测试
    • WO2007044286A2
    • 2007-04-19
    • PCT/US2006/038354
    • 2006-10-03
    • TEXAS INSTRUMENTS INCORPORATEDGROSE, William, E.LAMBERT, Lonnie, L.PITZ, Jeanne, KrayerTANAKA, Toru
    • GROSE, William, E.LAMBERT, Lonnie, L.PITZ, Jeanne, KrayerTANAKA, Toru
    • G11C29/00
    • G11C29/12G11C16/04G11C29/48G11C2029/3202
    • A method is provided for testing a semiconductor device that includes both a digital (310) and analog (320) portion. The digital portion may include a plurality of latch devices (361-364), and the analog portion may include a plurality of memory cells (321) and a plurality of selector devices (325). Each of the plurality of selector devices is electrically coupled to a respective one of the memory cells, is at least indirectly coupled to one of the plurality of latch devices, and is controlled by a selector input (215). A load clock (372) is applied to load a pattern into the plurality of latch devices. The selector input is asserted such that a derivative of the pattern is received by the plurality of selectors and returned to the plurality of latch devices. A system clock (371) is applied to the plurality of latch devices such that the derivative of the pattern is loaded into the plurality of latch devices.
    • 提供了一种用于测试包括数字(310)和模拟(320)部分的半导体器件的方法。 数字部分可以包括多个锁存装置(361-364),并且模拟部分可以包括多个存储单元(321)和多个选择器装置(325)。 多个选择器装置中的每一个电耦合到存储器单元中的相应一个存储器单元,至少间接耦合到多个锁存器装置中的一个,并且由选择器输入(215)控制。 加载时钟(372)被用于将图案加载到多个锁存器件中。 选择器输入被断言,使得图案的导数被多个选择器接收并返回到多个锁存装置。 系统时钟(371)被施加到多个锁存器件,使得图案的导数被加载到多个锁存器件中。
    • 59. 发明申请
    • DFT TECHNIQUE FOR STRESSING SELF-TIMED SEMICONDUCTOR MEMORIES TO DETECT DELAY FAULTS
    • 用于压制自身半导体存储器的DFT技术来检测延迟故障
    • WO2005088644A1
    • 2005-09-22
    • PCT/IB2005/050800
    • 2005-03-03
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.U.S. PHILIPS CORPORATIONAZIMANE, MohamedMAJHI, Ananta
    • AZIMANE, MohamedMAJHI, Ananta
    • G11C29/00
    • G11C29/48G11C29/024G11C29/12015G11C29/50G11C29/50012G11C29/56012
    • The present invention relates to a test system (100) interposed between a clock monitor (152) and an internal memory block (125) of a self-timed memory. In an example embodiment, the test system (100) receives an internal clock signal (104) from the clock monitor (152), an external clock signal (CL) and a control signal (CS). A multiplexer (110) of the test system provides in dependence upon the control signal (CS) the internal clock signal (104) to the internal memory block (125) during a normal mode of operation of the self-timed memory and the external clock signal (CL) to the internal memory block (125) during a test mode (108) of the self-timed memory. The test system (100) enables control of the clock cycle of the internal memory block (125) by directly applying the external clock signal (CL) during test mode. Thus, the internal memory block is stressed properly enabling the detection of small delay faults.
    • 本发明涉及一种插入在自定时存储器的时钟监视器(152)和内部存储块(125)之间的测试系统(100)。 在示例性实施例中,测试系统(100)从时钟监视器(152),外部时钟信号(CL)和控制信号(CS)接收内部时钟信号(104)。 在自定时存储器和外部时钟的正常操作模式期间,测试系统的多路复用器(110)根据控制信号(CS)提供内部存储器块(125)的内部时钟信号(104) 在自定时存储器的测试模式(108)期间向内部存储器块(125)发送信号(CL)。 测试系统(100)通过在测试模式期间直接施加外部时钟信号(CL)来实现内部存储器块(125)的时钟周期的控制。 因此,内部存储器块被适当地压缩,能够检测到小的延迟故障。
    • 60. 发明申请
    • APPARATUS AND METHOD FOR SELECTIVELY CONFIGURING A MEMORY DEVICE USING A BI-STABLE RELAY
    • 使用双稳态继电器选择性地配置存储器件的装置和方法
    • WO2005034176A2
    • 2005-04-14
    • PCT/US2004/027918
    • 2004-08-26
    • MICRON TECHNOLOGY, INC.GOMM, Tyler, J.
    • GOMM, Tyler, J.
    • H01L
    • G11C29/883G11C7/10G11C11/401G11C11/4093G11C23/00G11C29/1201G11C29/48G11C29/88G11C2207/2254
    • The disclosed embodiments of the present invention include a semiconductor memory apparatus having a selectable memory capacity. In one embodiment, a system includes input, output, and data storage devices, a processor coupled to the devices, a memory device coupled to the processor, and a configuration circuit interposed between the processor and the memory device to selectively couple lines in the address, control and data busses of the processor to lines in the address, control and data busses of the memory device. In another embodiment, a memory device includes an array coupleable to one or more busses of an external device and a configuration circuit between the array and the busses of the external device to selectively couple the busses to the memory cell array. In a particular embodiment, the configuration circuit includes one or more bi-stable relays, such as Micro-Electrical-Mechanical System (MEMS) relays.
    • 本发明公开的实施例包括具有可选存储器容量的半导体存储器装置。 在一个实施例中,系统包括输入,输出和数据存储设备,耦合到设备的处理器,耦合到处理器的存储设备,以及插入处理器和存储器设备之间的配置电路,以选择性地耦合地址中的行 ,处理器的控制和数据总线到存储器件的地址,控制和数据总线中。 在另一个实施例中,存储器件包括可耦合到外部设备的一个或多个总线的阵列和阵列与外部设备的总线之间的配置电路,以选择性地将总线连接到存储器单元阵列。 在特定实施例中,配置电路包括一个或多个双稳态继电器,例如微机电系统(MEMS)继电器。