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31. 发明授权

US06515360B2 Packaged semiconductor device and manufacturing method thereof 失效
标题翻译：封装半导体器件及其制造方法
公开(公告)号：US06515360B2
公开(公告)日：2003-02-04
申请号：US09495906
申请日：2000-02-02
申请人： Hironori Matsushima , Yoshihiro Tomita
发明人： Hironori Matsushima , Yoshihiro Tomita
IPC分类号： H01L2312
CPC分类号： H01L23/10 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/01019 , H01L2924/15311 , H01L2924/16152 , H01L2924/16195 , H01L2924/16315 , H01L2924/00012
摘要： A semiconductor chip is attached on a package substrate so as to be electrically connected to it and sealed. A ring member is attached to the package substrate and surrounds the semiconductor chip. A lid member is attached to the ring member and covers the semiconductor chip. The lid member is formed so as to be able to be removed from the ring member without impairing the attachment of the ring member to the package substrate.
摘要翻译：将半导体芯片安装在封装基板上，以便与其电连接并密封。环形构件附接到封装衬底并且围绕半导体芯片。盖构件附接到环构件并覆盖半导体芯片。盖构件形成为能够从环构件移除，而不会妨碍环构件附接到封装衬底。

32. 发明授权

US06382026B1 Acceleration sensor and acceleration apparatus using acceleration sensor 有权
标题翻译：加速度传感器和使用加速度传感器的加速装置
公开(公告)号：US06382026B1
公开(公告)日：2002-05-07
申请号：US09463140
申请日：2000-04-12
申请人： Hirofumi Tajika , Kazunari Nishihara , Koji Nomura , Motoyuki Taji , Yoshihiro Tomita
发明人： Hirofumi Tajika , Kazunari Nishihara , Koji Nomura , Motoyuki Taji , Yoshihiro Tomita
IPC分类号： G01P1509
CPC分类号： G01P1/023 , G01P1/02 , G01P15/0922
摘要： An acceleration sensor having a well controlled dispersion in the detection, characteristics and improved detection characteristics in the low frequency detection comprises a first piezoelectric plate (11), a second piezoelectric plate (12) bonded to the first piezoelectric plate (11) by direct bonding, a first external electrode (13) provided on the main surface of the first piezoelectric plate (11) and a second external electrode (14) provided on the main surface of the second piezoelectric plate (12). The first piezoelectric plate (11) and the second piezoelectric plate (12) are bonded together with their polarization axes reversed to each other. Appearance of the acceleration sensor resembles to a letter “L” in the cross section; thickness of the supporting section (15) is greater than that of the rest part (free vibration section).
摘要翻译：具有在低频检测中的检测，特性和改进的检测特性中良好控制的色散的加速度传感器包括：第一压电板（11），通过直接接合结合到第一压电板（11）的第二压电板（12），设置在第一压电板（11）的主表面上的第一外部电极（13）和设置在第二压电板（12）的主表面上的第二外部电极（14）。第一压电板（11）和第二压电板（12）以它们的偏振轴彼此相反地接合在一起。加速度传感器的外观类似于截面中的字母“L”; 支撑部分（15）的厚度大于其余部分（自由振动部分）的厚度。

33. 发明授权

US5910699A Method of manufacturing a composite substrate and a piezoelectric device using the substrate 失效
标题翻译：使用该基板的复合基板和压电元件的制造方法
公开(公告)号：US5910699A
公开(公告)日：1999-06-08
申请号：US876287
申请日：1997-06-16
申请人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
发明人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
IPC分类号： H01L41/312 , H01L41/39 , H03H3/02 , H03H9/05 , H03H9/19 , H01L41/08
CPC分类号： H03H9/0519 , H01L41/312 , H03H3/04 , H03H9/19 , Y10S148/012 , Y10T156/1052 , Y10T156/1082
摘要： A method of manufacturing a composite substrate and the composite substrate manufactured thereby wherein surfaces of first and second substrates having different thermal expansion coefficients are mirror finished and layered on each other. A first heat treatment is applied after which a part of the second substrate is removed to a depth sufficient to expose the first substrate. A final second heat treatment directly bonds the substrates.
摘要翻译：一种制造复合基板的方法和由此制造的复合基板，其中具有不同热膨胀系数的第一和第二基板的表面被镜面化并且彼此层叠。施加第一热处理之后，将第二基板的一部分去除足以露出第一基板的深度。最终的第二次热处理直接粘合基材。

34. 发明授权

US5771555A Method for producing an electronic component using direct bonding 失效
标题翻译：使用直接接合制造电子部件的方法
公开(公告)号：US5771555A
公开(公告)日：1998-06-30
申请号：US433687
申请日：1995-05-04
申请人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
发明人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
IPC分类号： C04B37/00 , H01L21/02 , H01L27/12 , H01L41/04 , H01L41/18 , H03H3/02 , H03H3/08 , H03H9/10 , H03H9/17 , H03H9/25 , H01L41/22
CPC分类号： H03H9/0595 , H01L41/053 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/1035 , Y10T29/42
摘要： An electronic component includes a first substrate and a second substrate. A first conductive layer constituting a terminal electrode is formed on a first surface of the first substrate. A first insulating layer is formed on the first conductive layer. The first insulating layer and the second substrate are directly bonded to each other by at least one bond selected from the group consisting of a hydrogen bond and a covalent bond.
摘要翻译：电子部件包括第一基板和第二基板。构成端子电极的第一导电层形成在第一基板的第一表面上。在第一导电层上形成第一绝缘层。第一绝缘层和第二基板通过选自由氢键和共价键组成的组中的至少一个键彼此直接键合。

35. 发明授权

US5637917A Lead frame assembly for a semiconductor device 失效
标题翻译：用于半导体器件的引线框组件
公开(公告)号：US5637917A
公开(公告)日：1997-06-10
申请号：US626956
申请日：1996-04-03
申请人： Yoshihiro Tomita , Michitaka Kimura , Yoshihiro Kashiba
发明人： Yoshihiro Tomita , Michitaka Kimura , Yoshihiro Kashiba
IPC分类号： H01L23/50 , H01L23/495
CPC分类号： H01L23/49541 , H01L23/49537 , H01L24/32 , H01L2224/32245 , H01L2924/12042 , H01L2924/12044 , H01L2924/3011
摘要： A lead frame assembly for a semiconductor device includes a lead frame having a lead frame main body and a first welding region, and a die pad frame having a die pad frame main body, a die pad frame, and a second welding region for welding to the first welding region of said lead frame main body. At least one of the first and second welding regions includes a welding pad for welding to the other welding region and a support bridge connected between the welding pad and a respective frame main body, supporting the welding pad from the respective frame main body, the support bridge including an element for suppressing transmission of at least one of mechanical force, heat, and electrical current.
摘要翻译：一种用于半导体器件的引线框架组件，包括具有引线框架主体和第一焊接区域的引线框架，以及具有管芯焊盘框架主体，管芯焊盘框架和第二焊接区域的管芯焊盘框架，所述引线框架主体的第一焊接区域。第一焊接区域和第二焊接区域中的至少一个包括用于焊接到另一个焊接区域的焊接焊盘和连接在焊接区域和相应的框架主体之间的支撑桥梁，其从相应的框架主体支撑焊接焊盘，支撑件桥，包括用于抑制机械力，热和电流中的至少一个的传递的元件。

36. 发明授权

US5535509A Method of making a lead on chip (LOC) semiconductor device 失效
标题翻译：制造片上（LOC）半导体器件的方法
公开(公告)号：US5535509A
公开(公告)日：1996-07-16
申请号：US325637
申请日：1994-10-19
申请人： Yoshihiro Tomita , Naoto Ueda , Yoshirou Nishinaka , Shunichi Abe , Hideyuki Ichiyama
发明人： Yoshihiro Tomita , Naoto Ueda , Yoshirou Nishinaka , Shunichi Abe , Hideyuki Ichiyama
IPC分类号： H01L21/52 , H01L21/56 , H01L21/60 , H01L23/495 , H01L23/50 , H01R43/00
CPC分类号： H01L24/06 , H01L21/565 , H01L23/49503 , H01L23/4951 , H01L23/49537 , H01L23/49551 , H01L24/32 , H01L24/83 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/06136 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48253 , H01L2224/4826 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2224/8319 , H01L2224/83801 , H01L2224/85207 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/351 , Y10T29/49121 , Y10T29/49146 , Y10T29/49172
摘要： A semiconductor device including a lead on chip structure employs two frames. One of the frames includes a die pad and an outer frame portion and the other frame includes a plurality of leads and an outer lead portion. After a semiconductor chip is die bonded to the die pad, the two frames are connected to each other with the leads extending across the semiconductor chip. Slits within the second frame provide access to parts of the outer frame of the first frame and the first frame is severed at those slits. The severed portions of the first frame are removed after which the leads of the second frame are connected by wire bonding to the semiconductor chip. Finally, the semiconductor chip, the remaining part of the first frame, and the second frame are encapsulated in a resin with leads extending from the resin. The remaining parts of the outer frame of the second frame are removed by cutting and the exposed leads outside the resin are formed into a desired shape.
摘要翻译：包括片上芯片结构的半导体器件采用两帧。其中一个框架包括芯片焊盘和外部框架部分，另一个框架包括多个引线和外部引线部分。在将半导体芯片裸芯片接合到芯片焊盘之后，两个框架通过跨越半导体芯片的引线彼此连接。第二框架内的狭缝提供对第一框架的外框架的部件的访问，并且第一框架在那些狭缝处被切断。第一框架的切断部分被去除，之后第二框架的引线通过引线接合连接到半导体芯片。最后，半导体芯片，第一框架的剩余部分和第二框架被封装在具有从树脂延伸的引线的树脂中。通过切割除去第二框架的外框架的其余部分，并将树脂外部的暴露的引线形成为期望的形状。

37. 发明授权

US5372295A Solder material, junctioning method, junction material, and semiconductor device 失效
标题翻译：焊料，接合方法，接合材料和半导体器件
公开(公告)号：US5372295A
公开(公告)日：1994-12-13
申请号：US955307
申请日：1992-10-01
申请人： Shunichi Abe , Katunori Asai , Yoshihiro Tomita , Hideyuki Ichiyama , Seizou Ohumae , Yoshirou Nishinaka , Katsuyuki Fukutome , Naoto Ueda , Toshio Takeuchi
发明人： Shunichi Abe , Katunori Asai , Yoshihiro Tomita , Hideyuki Ichiyama , Seizou Ohumae , Yoshirou Nishinaka , Katsuyuki Fukutome , Naoto Ueda , Toshio Takeuchi
IPC分类号： B23K35/02 , B23K35/26 , H01L21/60 , H01L21/58
CPC分类号： H01L24/32 , B23K35/0238 , B23K35/268 , H01L24/29 , H01L24/83 , B23K35/262 , H01L2224/04026 , H01L2224/26175 , H01L2224/27013 , H01L2224/29 , H01L2224/29011 , H01L2224/29101 , H01L2224/29111 , H01L2224/29298 , H01L2224/32245 , H01L2224/325 , H01L2224/83051 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/15747 , H01L2924/351
摘要： A solder material comprises a first solder plate and a second solder plate having a thickness equal to or larger than 1 micron provided at the both surfaces of the first solder plate comprising material having a lower melting point than the first solder or material which reacts with the first solder to produce an alloy having a lower melting point than the first solder.A junctioning method comprises putting the above-described solder material inserted between two objects to be junctioned to each other; heating the solder material to a temperature higher than the melting point of the second solder or the alloy and lower than the melting point of said first solder thereby to melt the second solder or the alloy; and thereafter cooling or keeping the solder material at a temperature in the vicinity of the melting point thereby to junction the objects to be junctioned to each other. The second solder plate has preferably a thickness less than 5 microns and the first solder plate has preferably a thickness equal to or larger than 30 microns. By this construction, the interval between the objects to be junctioned can be controlled to a predetermined thickness and the stress functioning to the objects can be relaxed as well as there arises no positional deviation between the objects.
摘要翻译：焊料材料包括第一焊料板和厚度等于或大于1微米的第二焊料板，其设置在第一焊料板的两个表面处，该第一焊料板包括具有比与第一焊料或第二焊料反应的第一焊料或材料更低的熔点的材料第一焊料以产生熔点低于第一焊料的合金。接合方法包括将插入在两个物体之间的上述焊料彼此连接; 将焊料材料加热到高于第二焊料或合金的熔点并低于所述第一焊料的熔点的温度，从而熔化第二焊料或合金; 然后将焊料材料冷却或保持在熔点附近的温度，从而将要连接的物体彼此接合。第二焊盘优选具有小于5微米的厚度，并且第一焊料板优选具有等于或大于30微米的厚度。通过这种结构，要连接的物体之间的间隔可以被控制到预定厚度，并且可以放松对物体起作用的应力，并且不会在物体之间产生位置偏差。

38. 发明授权

US5308462A Process for producing a ferroelectric film device 失效
标题翻译：铁电薄膜器件的制造方法
公开(公告)号：US5308462A
公开(公告)日：1994-05-03
申请号：US938676
申请日：1992-09-01
申请人： Kenji Iijima , Ryoichi Takayama , Yoshihiro Tomita , Ichiro Ueda
发明人： Kenji Iijima , Ryoichi Takayama , Yoshihiro Tomita , Ichiro Ueda
IPC分类号： H01L41/187 , B32B9/00 , C04B41/52 , C04B41/89 , C23C14/08 , C23C14/32 , C23C14/34 , C30B28/12 , C30B29/32 , G01J5/02 , G01J5/34 , H01B3/00 , H01L37/02
CPC分类号： H01L37/025 , C23C14/08 , C23C14/088 , H01L41/1876 , H01L41/316 , H01L41/257
摘要： For applying ferroelectrics to electronic devices, the poling treatment of the ferroelectrics has been necessary in order to uniform directions of spontaneous polarizations, Ps, in each ferroelectric. This treatment brings about (1) low yields of the devices, (2) difficulties in the fabrication of array devices, and (3) difficulties in the formation of ferroelectric films on semiconductor devices. Now it has been found that a self-polarized film in which spontaneous polarizations, Ps, are unidirectional can be formed by sputtering a ferroelectric materials containing lead under such conditions that the orientation of Ps will be controlled without poling treatment and a high-performance ferroelectric device can be obtained in a high yield by using this film, and thus a process for producing such devices has been found.
摘要翻译：为了将铁电体应用于电子器件，铁电体的极化处理是必要的，以便在每个铁电体中均匀自发极化的方向Ps。这种处理带来（1）器件的低产量，（2）阵列器件的制造困难，（3）在半导体器件上形成铁电薄膜的困难。现在已经发现，通过溅射含铅的铁电材料可以在这样的条件下形成其中自发极化Ps是单向的自偏振膜，即在不经极化处理的情况下控制Ps的取向和高性能的铁电体可以通过使用该膜获得高产率的装置，因此已经发现了用于制造这种装置的方法。

39. 发明授权

US5281818A Pyro-electric type infrared detector 失效
标题翻译：热电型红外探测器
公开(公告)号：US5281818A
公开(公告)日：1994-01-25
申请号：US712681
申请日：1991-06-10
申请人： Yoshihiro Tomita , Ryoichi Takayama , Motonobu Yoshikawa , Yoshiharu Yamamoto
发明人： Yoshihiro Tomita , Ryoichi Takayama , Motonobu Yoshikawa , Yoshiharu Yamamoto
IPC分类号： G01J5/34 , G01J5/10
CPC分类号： G01J5/34 , G01J2005/345
摘要： An apparatus for detecting position or temperature distribution of an object has a lens which is rotated around a pyroelectric type infrared sensor to collect incident infrared ray on the sensor while scanning the incident infrared ray in a rotational direction. The optical scanning is operated also in the longitudinal direction by providing with a plurality of lenses having different view in the longitudinal direction, the lenses being rotated sequentialy around the sensor. Further, detection of temperature of an object is conducted without using optical chopper by alternately observing the object and a standard temperature material which is arranged in a part of view, or by providing a stationary slit unit on a curved surface formed around a center axis which is the same as the rotation axis of the lens and a movable slit unit having the same pitch and arranged adjacent to the stationary slit unit and rotating together with the lens to intermitting the incident infrared ray.
摘要翻译：一种用于检测物体的位置或温度分布的装置具有透镜，该透镜围绕热电型红外传感器旋转以在传感器上收集入射的红外线，同时沿旋转方向扫描入射的红外线。通过在纵向上设置具有不同视角的多个透镜，光学扫描也在纵向上操作，透镜围绕传感器顺序旋转。此外，通过交替观察物体和部分配置的标准温度材料，或者通过在围绕中心轴线形成的曲面上设置静止的狭缝单元，不使用光学切断器来进行物体的温度的检测，与透镜的旋转轴线和具有相同节距的可移动狭缝单元相同并且与静止狭缝单元相邻并且与透镜一起旋转以间隔入射的红外线。

40. 发明申请

US20170004978A1 METHODS OF FORMING HIGH DENSITY METAL WIRING FOR FINE LINE AND SPACE PACKAGING APPLICATIONS AND STRUCTURES FORMED THEREBY 审中-公开
标题翻译：形成高密度金属接线的方法和空间包装应用及其形成的结构
公开(公告)号：US20170004978A1
公开(公告)日：2017-01-05
申请号：US11968116
申请日：2007-12-31
申请人： Chi-won Hwang , Yoshihiro Tomita
发明人： Chi-won Hwang , Yoshihiro Tomita
IPC分类号： H01L21/48 , H05K3/12 , H05K3/40 , H01L23/498 , H05K3/00
CPC分类号： H01L21/486 , C09D11/52 , H01L21/4867 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L2924/0002 , H05K3/0023 , H05K3/0026 , H05K3/107 , H05K3/1216 , H05K3/1258 , H05K3/1291 , H05K3/4053 , H05K3/465 , H05K3/4664 , H05K2201/0257 , H05K2203/1131 , H01L2924/00
摘要： Methods of forming microelectronic device structures are described. Those methods may include forming at least one opening through a build up structure and a photo sensitive material disposed on the build up structure, wherein the build up structure comprises a portion of a package substrate, filling the at least one opening with a metal containing nanopaste, and sintering the metal containing nanopaste to form a bulk property metal structure in the at least one opening.
摘要翻译：描述形成微电子器件结构的方法。这些方法可以包括通过建立结构和设置在堆积结构上的感光材料形成至少一个开口，其中堆积结构包括封装衬底的一部分，用含金属纳米糊剂填充至少一个开口并且在所述至少一个开口中烧结含有金属的纳米糊剂以形成本体特性的金属结构。

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