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1. 发明申请

US20180294400A1 Fe-Ni/Ti METALIZED SKUTTERUDITE THERMOELECTRIC MATERIAL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180294400A1
公开(公告)日：2018-10-11
申请号：US15695006
申请日：2017-09-05
申请人： KOREA INSTITUTE OF ENERGY RESEARCH , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Sang Hyun PARK , Chung-Yul YOO , Young Hwan JIN , Hana YOON , Byung jin CHO
IPC分类号： H01L37/02 , B32B15/04
CPC分类号： H01L37/025 , B32B15/043 , B32B2038/0092 , B32B2309/105 , H01L35/14
摘要： This invention relates to a metalized skutterudite thermoelectric material having improved long-term stability and a method of manufacturing the same, wherein the skutterudite thermoelectric material is metalized with a multilayer structure including a Ti layer for preventing the diffusion of the skutterudite thermoelectric material and a Fe—Ni layer for preventing an increase in the thickness of an intermetallic compound layer, whereby the performance of the skutterudite thermoelectric material does not deteriorate due to diffusion and formation of the intermetallic compound even upon long-term use, thus exhibiting improved stability of use, and moreover, the lifetime and stability of a thermoelectric power generation module using the skutterudite thermoelectric material can be increased, whereby the power generation efficiency of the thermoelectric power generation module can be increased in the long term.

2. 发明授权

US09842959B2 Method for producing a microsystem having pixels 有权
公开(公告)号：US09842959B2
公开(公告)日：2017-12-12
申请号：US15011812
申请日：2016-02-01
申请人： Pyreos Ltd.
发明人： Carsten Giebeler , Neil Conway
IPC分类号： H01L21/64 , H01L31/18 , G01J5/34 , H01L37/02 , G01J5/04 , G01J1/44 , G01J5/02 , H01L41/316
CPC分类号： H01L31/1884 , G01J1/44 , G01J5/023 , G01J5/024 , G01J5/046 , G01J5/34 , G01J2005/345 , H01L37/02 , H01L37/025 , H01L41/316
摘要： A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.

3. 发明申请

US20170309470A1 PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties, Methods of Making a PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties and Methods of Changing the End Group of a PVDF-TrFE Co-Polymer 审中-公开
公开(公告)号：US20170309470A1
公开(公告)日：2017-10-26
申请号：US15644652
申请日：2017-07-07
申请人： Jakob NILSSON , Christian BROX-NILSEN
发明人： Jakob NILSSON , Christian BROX-NILSEN
IPC分类号： H01L21/02 , H01L37/02 , H01L27/1159 , H01L27/11507 , C08F8/12 , C08F8/04 , C08F8/00 , C08F214/18 , C08F8/26 , C08F8/20 , H01L41/193 , C08F214/22
CPC分类号： H01L21/0212 , C08F8/00 , C08F8/04 , C08F8/12 , C08F8/20 , C08F8/26 , C08F214/182 , C08F214/22 , C08F2500/02 , C08F2810/40 , H01L27/11507 , H01L27/1159 , H01L28/00 , H01L37/025 , H01L41/193
摘要： A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device.

4. 发明申请

US20170074555A1 METHOD TO ENHANCE THE PERFORMANCE OF COOLING DEVICES UTILIZING MODIFIED BARIUM TITANATE (BT) ELECTROCALORIC CERAMIC MATERIALS 审中-公开
标题翻译：使用改性钛酸钡（BT）电化学陶瓷材料的冷却装置的性能提高方法
公开(公告)号：US20170074555A1
公开(公告)日：2017-03-16
申请号：US15265112
申请日：2016-09-14
申请人： Nascent Devices LLC
发明人： Ailan CHENG , Haisheng XU , Jianwei CHEN
IPC分类号： F25B21/00
CPC分类号： F25B21/00 , C04B35/49 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3229 , C04B2235/3251 , C04B2235/3267 , C04B2235/3275 , C04B2235/3293 , F25B2321/001 , H01L37/025 , Y02B30/66
摘要： A method to enhance the performances of cooling devices based on barium titanate (BT) ceramics is disclosed. Such cooling is realized by utilizing at least one BT-based ceramics which exhibit large electrocaloric effect (ECE). The method enhances the large ECE performances to cover temperature range between −30 C to 80C, by introducing an invariant critical point where paraelectric phase and at least one ferroelectric phase of BT-based ceramic refrigerant coexist.
摘要翻译：公开了一种提高基于钛酸钡（BT）陶瓷的冷却装置性能的方法。这种冷却是通过利用至少一种表现出大的电热效应（ECE）的基于BT的陶瓷来实现的。该方法通过引入其中顺电相和BT-基陶瓷制冷剂的至少一个铁电相共存的不变临界点，增强了大的ECE性能以覆盖-30℃至80℃的温度范围。

5. 发明申请

US20170054066A1 ELECTROCALORIC DEVICE 审中-公开
标题翻译：电动装置
公开(公告)号：US20170054066A1
公开(公告)日：2017-02-23
申请号：US15306848
申请日：2014-04-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： David Cann , Brady Gibbons , Troy Ansell , James Elmer Abbot Jr
IPC分类号： H01L37/02 , H01L23/373 , H01L27/16
CPC分类号： H01L37/025 , F25B21/00 , F25B2321/001 , H01L23/3677 , H01L23/373 , H01L27/16 , H01L2924/0002 , Y02B30/66 , H01L2924/00
摘要： The present disclosure is drawn to electrocaloric devices, methods of making electrocaloric integrated circuits, and methods of thermally cycling integrated circuits. The electrocaloric device can include an electrocaloric material having a solid solution of two or more components of BNT, BKT, BZT, BMgT, or BNiT. The electrocaloric material can have an ergodic transition temperature within a range of 50 C to 300 C. The device can also include electrodes associated with the electrocaloric material, as well as an electrical source to add or reduce electrical field between the electrodes across the electrocaloric material to generate heating or cooling relative to the ergodic transition temperature of the electrocaloric material.
摘要翻译：本公开涉及电热装置，制造电热集成电路的方法以及热循环集成电路的方法。电热装置可以包括具有BNT，BKT，BZT，BMgT或BNiT的两种或更多种组分的固溶体的电热材料。电热材料可以具有在50℃至300℃的范围内的遍历转变温度。该装置还可以包括与电热材料相关的电极，以及用于增加或减少跨过电热材料的电极之间的电场的电源以相对于电热材料的遍历转变温度产生加热或冷却。

6. 发明申请

US20160351778A1 THERMOELECTRIC CONVERSION ELEMENT AND PYROELECTRIC SENSOR 有权
标题翻译：热电转换元件和光电传感器
公开(公告)号：US20160351778A1
公开(公告)日：2016-12-01
申请号：US15153007
申请日：2016-05-12
申请人： Seiko Epson Corporation
发明人： Takayuki YONEMURA , Toshiki HARA
IPC分类号： H01L37/02 , G01J5/34 , G01J5/12
CPC分类号： H01L37/025 , G01J5/12 , G01J5/34
摘要： A thermoelectric conversion element includes a first electrode on provided a substrate; a pyroelectric film that is provided on the first electrode, is formed of a composite oxide having an ABO3-type perovskite structure, and generates a surface charge due to temperature change; and a second electrode provided on the pyroelectric film, in which the composite oxide which forms at least a portion of layer in the pyroelectric film contains at least Pb, Nb, and Ti, and is formed of tetragonal crystal which is oriented in the direction of {100} on the substrate.
摘要翻译：热电转换元件包括设置在基板上的第一电极; 设置在第一电极上的热电膜由具有ABO 3型钙钛矿结构的复合氧化物形成，并且由于温度变化而产生表面电荷; 以及设置在所述热电膜上的第二电极，其中形成所述热电膜中的至少一部分层的复合氧化物至少含有Pb，Nb和Ti，并且由四方晶体形成，所述四方晶体取向为 {100}在基板上。

7. 发明申请

US20160223408A1 COMPOSITIONS, APPARATUS AND METHODS FOR CAPACITIVE TEMPERATURE SENSING 审中-公开
标题翻译：用于电容温度感测的组合物，装置和方法
公开(公告)号：US20160223408A1
公开(公告)日：2016-08-04
申请号：US14917570
申请日：2014-09-11
申请人： 3M INNOVATIVE PROPERTIES COMPANY
发明人： Dipankar Ghosh , Myungchan Kang , Jaewon Kim
IPC分类号： G01K7/34
CPC分类号： G01K7/34 , C01G23/006 , C01G25/006 , C01G27/006 , C04B35/4682 , C04B2235/3244 , C04B2235/3293 , C08K2003/2237 , G01K7/38 , H01B3/12 , H01G4/1227 , H01G7/04 , H01G7/06 , H01L37/025 , H02G1/00
摘要： A passive temperature-sensing apparatus, which includes a capacitive sensing element that includes a capacitive sensing composition that includes a ferroelectric ceramic material that exhibits a measurable electrical Curie temperature that is below 30 degrees C. The capacitive sensing composition exhibits a negative slope of capacitance versus temperature over the temperature range of from 30 degrees C. to 150 degrees C.
摘要翻译：一种无源温度感测装置，其包括电容性感测元件，其包括电容性感测组合物，其包含表现出低于30摄氏度的可测量电居里温度的铁电陶瓷材料。电容感测组合物呈现负电容相对斜率温度范围在30摄氏度到150摄氏度之间。

8. 发明申请

US20160149071A1 METHOD FOR PRODUCING A MICROSYSTEM HAVING PIXELS 有权
标题翻译：用于生产具有像素的微结构的方法
公开(公告)号：US20160149071A1
公开(公告)日：2016-05-26
申请号：US15011812
申请日：2016-02-01
申请人： Pyreos Ltd.
发明人： Carsten GIEBELER , Neil CONWAY
IPC分类号： H01L31/18
CPC分类号： H01L31/1884 , G01J1/44 , G01J5/023 , G01J5/024 , G01J5/046 , G01J5/34 , G01J2005/345 , H01L37/02 , H01L37/025 , H01L41/316
摘要： A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.
摘要翻译：一种用于制造具有像素的微系统（1）的方法包括：通过硅晶片的氧化在硅晶片的表面上形成作为基底层（5）的热氧化硅层; 通过热沉积在基底层上形成作为载体层（6）的氧化硅薄层; 通过热沉积在载体层上产生铂层，由此产生中间产物; 将中间产物冷却至室温; 通过去除铂层的剩余区域来形成铂层的像素结构，由此像素（7,8）的底部电极（8,12）以剩余区域中的载体层上的像素形状形成; 去除硅晶片背离基底层的材料，因此保留框架（3），并且由基底层和载体层形成的膜（4）被框架横跨。

9. 发明申请

US20160131530A1 PYROELECTRIC BODY, PYROELECTRIC ELEMENT, PRODUCTION METHOD FOR PYROELECTRIC ELEMENT, THERMOELECTRIC CONVERSION ELEMENT, PRODUCTION METHOD FOR THERMOELECTRIC CONVERSION ELEMENT, THERMAL PHOTODETECTOR, PRODUCTION METHOD FOR THERMAL PHOTODETECTOR, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：电子体系，电子元件，电子元件的制造方法，热电转换元件，热电转换元件的制造方法，热光电转换器，热光电转换器的制造方法以及电子设备
公开(公告)号：US20160131530A1
公开(公告)日：2016-05-12
申请号：US14932216
申请日：2015-11-04
申请人： Seiko Epson Corporation
发明人： Yasushi TSUCHIYA
IPC分类号： G01J5/02 , C01G49/00
CPC分类号： G01J5/02 , C01G49/009 , C01P2002/34 , C01P2006/40 , C04B35/26 , C04B35/62218 , C04B35/62222 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3262 , C04B2235/3298 , C04B2235/441 , C04B2235/449 , C04B2235/768 , G01J5/024 , G01J5/046 , G01J5/048 , G01J5/34 , H01L37/025
摘要： A pyroelectric body includes an oxide containing iron, manganese, bismuth, and gadolinium, wherein the oxide has a perovskite-type crystal structure, and in the oxide, the ratio of the number of atoms of gadolinium to the total number of atoms of A-site elements is 8.0 at % or more and 18 at % or less. In the oxide, the ratio of the number of atoms of manganese to the total number of atoms of B-site elements is preferably 1.0 at % or more and 2.0 at % or less. In the oxide, the ratio of the number of atoms of titanium to the total number of atoms of B-site elements is preferably 0 at % or more and 4.0 at % or less. The pyroelectric body is preferably used at an environmental temperature in the range of −40° C. or higher and 40° C. or lower.
摘要翻译：热电体包括含有铁，锰，铋和钆的氧化物，其中所述氧化物具有钙钛矿型晶体结构，并且在所述氧化物中，所述钆的原子数与所述原子的总数之比为A- 现场元素为8.0原子％以上且18原子％以下。在氧化物中，锰原子数与B位元素的原子总数的比例优选为1.0原子％以上且2.0原子％以下。在氧化物中，钛原子数与B位元素的原子总数的比优选为0at％以上且4.0at％以下。热电体优选在-40℃以上且40℃以下的环境温度下使用。

10. 发明申请

US20160087185A1 METHODS TO IMPROVE THE MECHANICAL PERFORMANCE OF ELECTROCALORIC POLYMERS IN ELECTROCALORIC REFRIGERATORS 审中-公开
标题翻译：改善电动冷冻机中电化学聚合物机械性能的方法
公开(公告)号：US20160087185A1
公开(公告)日：2016-03-24
申请号：US14800477
申请日：2015-07-15
申请人： Nascent Devices LLC
发明人： Ailan CHENG
IPC分类号： H01L37/02 , F25B21/00
CPC分类号： H01L37/025 , F25B21/00 , F25B2321/001 , Y02B30/66
摘要： A cooling device utilizing the polymer composite materials possessing high electrocaloric effect and high elastic modulus are disclosed. Especially methods to enhance mechanical properties and reduce creep of the polymer composites with insulation fibers of high elastic modulus while maintain high electrocaloric effect.
摘要翻译：公开了一种利用具有高电热效应和高弹性模量的聚合物复合材料的冷却装置。特别是增强机械性能并降低聚合物复合材料与具有高弹性模量的绝缘纤维的蠕变的方法，同时保持高的电热效应。

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