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21. 发明公开

KR1020130112647A 블랭크마스크, 포토마스크 및 그의 제조 방법 无效
标题翻译： BLANKMASK，PHOTOMASK及其制造方法
公开(公告)号：KR1020130112647A
公开(公告)日：2013-10-14
申请号：KR1020120037208
申请日：2012-04-10
申请人： 주식회사 에스앤에스텍
发明人： 남기수 , 강긍원 , 이종화 , 양철규 , 권순기 , 정상민
IPC分类号： G03F1/46
CPC分类号： G03F1/46 , G03F1/14 , G03F1/22 , G03F1/26 , G03F1/32 , G03F1/50 , H01L21/0337
摘要： PURPOSE: A blank mask, a photomask, and a manufacturing method thereof are provided to increase etch rate of a hard film by reducing thickness of the hard film, thereby enhancing resolution by thinning a resist film. CONSTITUTION: A blank mask (200) includes a shielding film (220) and a hard film (230) on a transparent substrate (210). The hard film essentially includes metal and one or more of impurities including nitrogen (N), oxygen (O), carbon (C), and hydrogen (H). 25-75 wt% of the impurities is contained, or the blank mask includes the shielding film on the transparent substrate and the hard film. The shielding film has a thickness of 400Å or less, optical density of 2.0-3.5 at 193nm wavelength and essentially includes metal and silicon.
摘要翻译：目的：提供空白掩模，光掩模及其制造方法，以通过减小硬膜的厚度来提高硬膜的蚀刻速率，从而通过使抗蚀剂膜变薄来提高分辨率。构成：空白掩模（200）在透明基板（210）上包括屏蔽膜（220）和硬膜（230）。硬膜基本上包括金属和一种或多种杂质，包括氮（N），氧（O），碳（C）和氢（H）。含有25-75重量％的杂质，或者掩模包括透明基板上的屏蔽膜和硬膜。屏蔽膜具有400或更小的厚度，在193nm波长处的光密度为2.0-3.5，并且基本上包括金属和硅。

22. 发明公开

KR1020130064092A 반도체 디바이스의 제조 방법 有权
标题翻译：掩模板，转印掩模，制造转移掩模的方法和制造半导体器件的方法
公开(公告)号：KR1020130064092A
公开(公告)日：2013-06-17
申请号：KR1020130058960
申请日：2013-05-24
申请人： 호야 가부시키가이샤
发明人： 고미나또아쯔시 , 하시모또마사히로 , 노자와오사무
IPC分类号： G03F1/46 , H01L21/027
CPC分类号： G03F1/50 , G03F1/00 , G03F1/26 , G03F1/58 , G03F7/20 , G03F7/2041 , H01L21/266 , H01L21/268 , H01L21/31138 , G03F1/46 , H01L21/0276
摘要： PURPOSE: A mask blank, a transferring mask, a manufacturing method of the transferring mask, and a manufacturing method of a semiconductor device are provided to reduce various loads of manufacturing processes. CONSTITUTION: A mask blank has a light shielding film for forming a binary mask, to which ArF excimer laser-based exposure light is applied, and forming transferring patterns on a light transmissive substrate. The light shielding film is composed of a stacked structure. The optical density to the exposure light of the light shielding film is 2.8 or more, and the thickness of the light shielding film is 45 nm or less. The lower layer of the stacked structure is composed of a material in which the total content of transition metals and silicon is 90 atomic% or more, and the thickness of the layer is 30 nm or more. The thickness of the upper layer of the stacked structure is within 3-6 nm. Phase difference between exposure light through the light shielding film and exposure light through air as much as the thickness of the light shielding film is 30 degrees or less. A manufacturing method of the transferring mask includes an etching process for etching the light shielding film. A manufacturing method of the semiconductor device forms a circuit pattern on a semiconductor wafer. [Reference numerals] (AA) EMF bias[nm]; (BB) Pitch[nm]
摘要翻译：目的：提供掩模坯料，转印掩模，转印掩模的制造方法和半导体器件的制造方法，以减少制造工艺的各种负载。构成：掩模毛坯具有用于形成二元掩模的遮光膜，其中施加ArF准分子激光基曝光光，并在透光基板上形成转印图案。遮光膜由层叠结构构成。遮光膜的曝光光的光密度为2.8以上，遮光膜的厚度为45nm以下。层叠结构的下层由过渡金属和硅的总含量为90原子％以上，层的厚度为30nm以上的材料构成。层叠结构的上层的厚度在3-6nm以内。通过遮光膜的曝光光与透过空气的曝光光的遮光膜的厚度的相位差为30度以下。转印掩模的制造方法包括用于蚀刻遮光膜的蚀刻工艺。半导体器件的制造方法在半导体晶片上形成电路图案。（标号）（AA）EMF偏压[nm]; （BB）间距[nm]

23. 发明公开

KR1020130027435A 포토마스크 블랭크, 포토마스크 및 그의 제조 방법 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK和制作方法
公开(公告)号：KR1020130027435A
公开(公告)日：2013-03-15
申请号：KR1020120098549
申请日：2012-09-06
申请人： 신에쓰 가가꾸 고교 가부시끼가이샤
发明人： 이나즈끼,유끼오 , 이가라시,신이찌 , 니시까와,가즈히로 , 요시까와,히로끼
IPC分类号： G03F1/38 , G03F1/80 , H01L21/027
CPC分类号： G03F1/26 , G03F1/14 , G03F1/38 , G03F1/50 , B82Y30/00 , G03F1/32 , G03F1/54 , G03F1/76 , G03F1/80 , H01L21/0273
摘要： PURPOSE: A photomask blank, a photomask, and a manufacturing method thereof are provided to accurately process an optical film which includes a transition metal silicon compound material. CONSTITUTION: A photomask blank consists of a transparent plate(1), an optical film(50), and a hard mask film. The hard mask film is a multilayer including a chrome-based material. The multilayer comprises a first layer(30) and a second layer(20). The first layer includes a chrome-based material which contains 20-60 atom% of oxygen and has a thickness of 0.5-5.0 nm. The second layer is formed to be attached to a first layer, and includes a chrome-based material with a lower oxygen content than the oxygen content in a first layer. The whole thickness of the hard mask film is 2.0-10 nm.
摘要翻译：目的：提供光掩模坯料，光掩模及其制造方法，以精确地处理包括过渡金属硅化合物材料的光学膜。构成：光掩模坯料由透明板（1），光学膜（50）和硬掩模膜构成。硬掩模膜是包含铬基材料的多层。多层包括第一层（30）和第二层（20）。第一层包括含有20-60原子％氧并且厚度为0.5-5.0nm的铬基材料。第二层被形成为附接到第一层，并且包括具有比第一层中的氧含量低的氧含量的铬基材料。硬掩模膜的整个厚度为2.0-10nm。

24. 发明公开

KR1020120123194A 보조 위상 영역을 갖는 위상-시프트 마스크 审中-实审
标题翻译：辅助相位区相移屏蔽
公开(公告)号：KR1020120123194A
公开(公告)日：2012-11-08
申请号：KR1020120037323
申请日：2012-04-10
申请人： 울트라테크 인크.
发明人： 흐시에로버트엘. , 플랙워렌더블유.
IPC分类号： G03F1/26 , H01L21/027
CPC分类号： G03F1/26 , G03F1/08 , H01L21/0274
摘要： PURPOSE: A phase shift mask is provided to ensure the identical structure and the identical performance of light emitting diodes by forming the rough surfaces of substrates. CONSTITUTION: A phase shift mask(112) is used for a photolithography imaging system with resolution limit. The phase shift mask includes a plurality of auxiliary phase regions and checkered type arrays in phase-shift region(R0, Rπ). The checkered type array includes a peripheral part, and the size of the checkered type array is more than or equal to the resolution limit. The auxiliary phase regions are adjacently arrayed to at least part of the peripheral part. The size of each auxiliary phase region is less than the resolution limit.
摘要翻译：目的：通过形成基板的粗糙表面，提供相移掩模以确保发光二极管的相同结构和相同的性能。构成：相移掩模（112）用于具有分辨率极限的光刻成像系统。相移掩模包括相移区域（R0，Rπ）中的多个辅助相位区域和方格型阵列。方格类型阵列包括外围部分，并且方格类型数组的大小大于或等于分辨率限制。辅助相位区域相邻排列到周边部分的至少一部分。每个辅助相位区域的大小小于分辨率极限。

25. 发明公开

KR1020120091101A 편향 미러를 포함하는 반사 굴절식 투영 대물 렌즈 및 투영 노광 방법 有权
标题翻译：包含反射镜和投影曝光方法的目标投影目标
公开(公告)号：KR1020120091101A
公开(公告)日：2012-08-17
申请号：KR1020127010262
申请日：2010-09-16
申请人： 칼 짜이스 에스엠티 게엠베하
发明人： 쉬케탄즈,토마스 , 그루너,토랄프
IPC分类号： G03F7/20 , G02B17/08
CPC分类号： G02B17/0892 , G02B13/14 , G02B17/08 , G02B17/0896 , G03F1/26 , G03F7/702 , G03F7/70225 , G03F7/70258 , G03F7/70266 , G03F7/70275 , G03F7/70308 , G03F7/70316 , G03F7/70441 , G03F7/70791
摘要： 반사 굴절식 투영 대물 렌즈는 다수의 렌즈 및 적어도 하나의 오목 미러(CM), 및 또한 오목 미러에서 이미지 필드로 진행하는 부분 빔 경로로부터 객체 필드에서 오목 미러로 진행하는 부분 빔 경로를 분리하기 위한 2개의 편향 미러(FM1, FM2)를 갖는다. 편향 미러는 제 1 방향(x-방향)과 평행하게 진행하는 틸팅축을 중심으로 투영 대물 렌즈의 광학 축(OA)에 대해 틸트된다. 제 1 편향 미러는 제 1 필드 평면에 광학적으로 근접하여 배치되고, 제 2 편향 미러는 제 1 필드 평면에 대해 광학적으로 공액인 제 2 필드 평면에 광학적으로 근접하여 배치된다. 상기 필드 평면 사이에 배치된 광학 이미징 시스템은 제 1 방향에서 -1에 근접한 이미징 스케일을 갖는다. 제 1 위치와 제 2 위치 사이의 제 1 방향과 평행한 편향 미러(FM1, FM1)의 동기 변위를 위해, 제 1 위치에 대해 변위 거리만큼 오프셋되는 변위 장치(DISX)가 제공된다. 투영 대물 렌즈를 통해 진행하는 투영 방사선 빔은 편향 미러의 제 1 위치 내의 제 1 반사 영역 및 편향 미러의 제 2 위치 내의 제 2 반사 영역에서 반사되고, 상기 제 2 반사 영역은 제 1 반사 영역에 대해 제 1 방향과 평행한 변위 거리만큼 횡으로 오프셋된다. 편향 미러는 제 1 및 2 반사 영역 내의 반사 특성의 서로 다른 로컬 분포를 갖는다. 필드 효과, 예컨대 필드 균일도의 활성 조작, 또는 웨이브프론트의 활성 조작은 이에 의해 가능하게 된다.
摘要翻译：反射折射投射物镜具有多个透镜和至少一个凹面镜，以及两个偏转镜，以便将从物镜区域延伸的部分光束路径与从凹面反射镜到图像字段。偏转镜相对于投影物镜的光轴相对于平行于第一方向（x方向）延伸的倾斜轴线倾斜。第一偏转镜被布置成光接近第一场平面，并且第二偏转镜布置成光学接近于相对于第一场平面光学共轭的第二场平面。提供了用于偏转镜的同步位移的位移装置。偏转镜在第一反射区域和第二反射区域中的反射特性分别具有不同的局部分布。

26. 发明公开

KR1020120057509A 포토마스크의 결함 수정 방법, 포토마스크의 제조 방법, 및 포토마스크와 패턴 전사 방법 有权
标题翻译：用于校正光刻胶缺陷的方法，用于制造光刻胶的方法，光电子图案和图案转印方法
公开(公告)号：KR1020120057509A
公开(公告)日：2012-06-05
申请号：KR1020110100314
申请日：2011-09-30
申请人： 호야 가부시키가이샤
发明人： 사까모또유지
IPC分类号： G03F1/72 , G03F1/00 , G03F7/00
CPC分类号： G03F1/72 , G03F1/14 , G03F1/26 , G03F1/32 , G03F1/34 , G03F1/46 , G03F1/54 , G03F1/74 , G03F1/84
摘要： PURPOSE: A method for correcting the defects of a photo-mask, a method for manufacturing a photo-mask, the photo-mask and a method for transferring patterns are provided to correct defects on patterns with narrow line width and to improve the precision of correction. CONSTITUTION: A photo-mask includes a light shielding part(2S) and a light transmissive part(3T) formed by patterning the light shielding part. A method for correcting defects on the photo-mask includes the following: excessive defects on the light transmissive part and a part of the light shielding part adjacent to the excessive defects are simultaneously eliminated. A corrected film is formed on the light shielding part. The defect correcting process is implemented by a defect collecting unit.
摘要翻译：目的：提供一种用于校正光掩模缺陷的方法，制造光掩模的方法，光掩模和转印图案的方法，以校正具有窄线宽度的图案上的缺陷并提高其精度更正。构成：光掩模包括遮光部分（2S）和通过图案化遮光部分形成的透光部分（3T）。用于校正光掩模上的缺陷的方法包括：同时消除透光部分上的过度缺陷和与过度缺陷相邻的遮光部分的一部分。在遮光部上形成有修正膜。缺陷校正处理由缺陷收集单元实现。

27. 发明公开

KR1020120057488A 포토마스크 블랭크의 제조방법과 포토마스크 블랭크와 포토마스크 无效
标题翻译：光掩模坯料和光掩模坯料和光掩模的制造方法
公开(公告)号：KR1020120057488A
公开(公告)日：2012-06-05
申请号：KR1020110032752
申请日：2011-04-08
申请人： 주식회사 에스앤에스텍
发明人： 남기수 , 강긍원 , 양철규
IPC分类号： G03F1/26 , H01L21/027
CPC分类号： G03F1/26 , G03F1/38 , G03F1/66 , H01L21/0274 , H01L21/0337
摘要： PURPOSE: A method for manufacturing a photo mask blank, the photo mask blank, and a photo mask are provided to overcome pattern precision related problems and alignment-related problems and to prevent the increase of defects due to complex processes. CONSTITUTION: A photo mask blank includes a metallic film containing silicon and nitrogen and a hard mask film containing chromium. The metallic film is arranged on a substrate(10). The hard mask film is arranged on the metallic film. The transmittance of the metallic film to exposing light is between 0.1 and 5%. The reflectivity of the metallic film is between 10 and 30%. The reflectivity of the hard mask film to the exposing light is between 0.1 and 30%. The peak wavelength of the exposing light is 193nm. The metallic film includes one or more metals of molybdenum(Mo), chrome(Cr), tantalum(Ta), ruthenium(Ru), titanium(Ti), and tungsten(W). The thickness of the metallic film is 200 to 600 angstroms.
摘要翻译：目的：提供一种制造光掩模坯料，光掩模坯料和光掩模的方法，以克服图案精度相关问题和对准相关问题，并防止由于复杂工艺引起的缺陷增加。构成：光掩模坯料包括含有硅和氮的金属膜和含有铬的硬掩模膜。金属膜设置在基板（10）上。硬掩模膜布置在金属膜上。金属膜对曝光的透射率在0.1％与5％之间。金属膜的反射率在10％至30％之间。硬掩模膜对曝光光的反射率为0.1〜30％。曝光光的峰值波长为193nm。金属膜包括一种或多种钼（Mo），铬（Cr），钽（Ta），钌（Ru），钛（Ti）和钨（W）的金属。金属膜的厚度为200〜600埃。

28. 发明公开

KR20120055782A Exposure head of maskless exposure apparatus 审中-公开
标题翻译：接触头接触头
公开(公告)号：KR20120055782A
公开(公告)日：2012-06-01
申请号：KR20100117046
申请日：2010-11-23
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM TAE HYUN , LEE HI KUK , JANG SANG DON
IPC分类号： G03F7/20
CPC分类号： G03F7/70291 , G03B27/52 , G03F1/26 , G03F7/70191 , G03F7/70275 , G03F7/70383 , G03F7/70716
摘要： PURPOSE: The exposure head of a maskless exposing apparatus is provided to cost effectively manufacture an exposure optical system and to reduce the size of the exposure optical system. CONSTITUTION: The exposure head(200) of a maskless exposing apparatus includes a plurality of light illumination optical system(210A, 210B), a plurality of spatial light modulators(230A, 230B), a plurality of projection optical systems(232A, 232B), and an exposure optical system(240). The spatial light modulators selectively reflect light from the light illumination optical systems according to the shape of patterns on a substrate. The projection optical systems obtain projected images based on the reflected light. The exposure optical system transfers light through the projection optical systems to the substrate. A plurality of spatial light modulators faces each other.
摘要翻译：目的：提供无掩模曝光装置的曝光头以有效地制造曝光光学系统并减小曝光光学系统的尺寸。构成：无掩模曝光装置的曝光头（200）包括多个照明光学系统（210A，210B），多个空间光调制器（230A，230B），多个投影光学系统（232A，232B），以及曝光光学系统（240）。空间光调制器根据基板上的图案的形状选择性地反射来自光照射光学系统的光。投影光学系统基于反射光获得投影图像。曝光光学系统通过投影光学系统将光传输到基板。多个空间光调制器彼此面对。

29. 发明公开

KR1020120050954A 다계조 포토마스크 및 그 제조 방법과 패턴 전사 방법 无效
标题翻译：多灰度光栅及其制作方法及图案转印方法
公开(公告)号：KR1020120050954A
公开(公告)日：2012-05-21
申请号：KR1020120046172
申请日：2012-05-02
申请人： 호야 가부시키가이샤
发明人： 야마구찌노보루 , 미요시마사유끼
IPC分类号： G03F1/78 , G03F7/00
CPC分类号： G03F1/14 , G03F1/144 , G03F1/26 , G03F1/32 , G03F1/34 , G03F1/54 , G03F1/80 , H01L21/0337
摘要： PURPOSE: A method for manufacturing a photo-mask and a method for transferring patterns are provided to reduce the variation of transmissivity in plane of the photo-mask. CONSTITUTION: A method for manufacturing a photo-mask includes the following: a semi-transmissive film(24) is formed on a transparent substrate and transmits a part of exposing light; the semi-transmissive film is patterned to form transferring patterns including a semi-transmissive part; the exposing light transmissivity of a plurality of semi-transmissive parts in the transferring patterns is measured; the selected part of the semi-transmissive part is differently surface-treated based on the measuring result to vary exposing light transmissivity. The surface treating process includes an energy irradiating process with respect to the selected part of the semi-transmissive part.
摘要翻译：目的：提供一种制造光掩模的方法和转印图案的方法，以减少光掩模平面内透光率的变化。构成：用于制造光掩模的方法包括以下：半透射膜（24）形成在透明基板上并透射一部分曝光光; 图案化半透射膜以形成包括半透射部分的转印图案; 测量转印图案中的多个半透射部分的曝光光透射率; 基于测量结果，半透射部分的选定部分被不同的表面处理以改变曝光光透射率。表面处理工艺包括相对于半透射部分的所选部分的能量照射过程。

30. 发明公开

KR1020110127587A 하프톤형 위상반전 블랭크 마스크 및 그 제조방법 有权
标题翻译：薄膜相位移相机及其制造方法
公开(公告)号：KR1020110127587A
公开(公告)日：2011-11-25
申请号：KR1020100100271
申请日：2010-10-14
申请人： 주식회사 에스앤에스텍
发明人： 남기수 , 양철규
IPC分类号： H01L21/027
CPC分类号： G03F1/26 , G03F1/0046 , H01L21/0274 , H01L21/0337
摘要： PURPOSE: A halt tone phase shift blank mask and a manufacturing method are provided to reduce the thickness of a phase shift layer by consecutively changing the composition ratio of a phase shift layer to the longitudinal direction of the phase shift layer in the formation of the phase shift layer. CONSTITUTION: A phase shift layer(20) is formed on a transparent substrate. A metal layer(30) is formed on a phase shift layer. A resist film(40) is formed on the metal layer. The phase shift layer is formed into the continuous film of a single layer or multilayer in which the composition ratio of a thin film is changed into the longitudinal direction to a transparent substrate. A blank mask is used for KrF(Krypton fluoride) and the thickness of the phase shift layer is 300 to 800Å.
摘要翻译：目的：提供停止色调相移空白掩模和制造方法，以通过在相位形成阶段连续地改变相移层与相移层的纵向方向的组成比来减小相移层的厚度移位层构成：在透明基板上形成相移层（20）。在相移层上形成金属层（30）。在金属层上形成抗蚀膜（40）。相变层形成为单层或多层的连续膜，其中薄膜的组成比变为纵向方向的透明基板。使用空白掩模用于KrF（氟化氪），相移层的厚度为300〜800。

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