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1. 发明授权

KR101623206B1 포토마스크 블랭크, 포토마스크 및 그 제조 방법 有权
标题翻译： PHOTOMASK BLANK PHOTOMASK及其制造方法
公开(公告)号：KR101623206B1
公开(公告)日：2016-05-20
申请号：KR1020090058191
申请日：2009-06-29
申请人： 호야 가부시키가이샤
发明人： 하시모또마사히로 , 미쯔이히데아끼
IPC分类号： G03F1/26 , G03F1/50
CPC分类号： G03F1/38 , G03F1/32 , G03F1/34 , G03F1/80
摘要： 투광성기판에, 투과하는노광광에대해소정의위상차를발생시키는위상시프트부를형성한위상시프트마스크를제작하기위한포토마스크블랭크이다. 상기위상시프트부는, 위상시프트부를형성하지않은부분의투광성기판을투과하는노광광에대해, 소정의위상차를발생시키는파들어가기깊이로상기투광성기판의표면으로부터파들어간파들어가기부이다. 상기투광성기판을파들어가는측의표면에는, 염소계가스로실질적으로드라이에칭되고, 불소계가스로실질적으로드라이에칭되지않는재료로형성되고, 파들어가기부를형성할때에적어도상기파들어가기깊이에도달할때까지에칭마스크로서기능하는에칭마스크막을구비하고, 상기투광성기판의반대측의표면에는, 에칭에의해전사패턴영역이외의영역에서투광성기판을투과하는노광광을차광하는차광부(차광대)를형성하는차광막을구비한다.

2. 发明公开

KR1020140104433A 위상 시프트 마스크 및 그 위상 시프트 마스크를 사용한 레지스트 패턴 형성 방법 有权
标题翻译：相移片掩模和使用相移片掩模形成电阻图案的方法
公开(公告)号：KR1020140104433A
公开(公告)日：2014-08-28
申请号：KR1020147016282
申请日：2013-02-15
申请人： 다이니폰 인사츠 가부시키가이샤
发明人： 기노시타가즈키 , 도비타아츠시
IPC分类号： G03F1/34 , G03F7/20
CPC分类号： G03F1/34 , G03F7/20 , H01L21/027
摘要： 종래의 화상 표시 장치 제조용 노광 장치를 이용하고, 투명 기판 등의 피가공재 상에, 그 노광 장치의 해상 한계 미만의 치수를 갖는 소정의 레지스트 패턴을 고정밀도로 형성할 수 있는 위상 시프트 마스크 및 그 위상 시프트 마스크를 사용한 레지스트 패턴 형성 방법을 제공한다. 노광 장치의 해상 한계 미만의 설계 치수의 레지스트 패턴 형성용 위상 시프트 마스크는, 투명 기판과, 노광 장치로부터의 노광광에 소정의 위상차를 부여하는 위상 시프트부와, 위상 시프트부에 인접하는 비위상 시프트부를 구비하고, 위상 시프트부 및 비위상 시프트부 중 적어도 어느 한쪽이 노광 장치의 해상 한계 미만의 치수이면서, 위상 시프트부의 치수와 비위상 시프트부의 치수가 서로 다르며, 투명 기판 상에 있어서의 위상 시프트부 및 비위상 시프트부를 포함하는 패턴 영역의 크기가 1변 300㎜ 이상이며, 적어도 패턴 영역 내에 노광 장치의 해상 한계 미만의 치수의 차광부를 갖지 않는다.

3. 发明公开

KR1020140099427A 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 审中-实审
标题翻译：照相机，制作光刻胶和图案转印方法
公开(公告)号：KR1020140099427A
公开(公告)日：2014-08-12
申请号：KR1020140080183
申请日：2014-06-27
申请人： 호야 가부시키가이샤
发明人： 이마시끼노부히사
IPC分类号： G03F1/26
CPC分类号： G03F1/26 , G03F1/14 , G03F1/22 , G03F1/32 , G03F1/34 , G03F1/46 , G03F1/80 , H01L21/0337
摘要： Obtained are a photomask and a transferring method by which a fine pattern may be clearly and precisely transferred, and a method for manufacturing a flat panel display. The photomask includes a light shielding part shielding at least some of an exposure light and a light transmitting part exposing a transparent substrate on a transparent substrate. The light shielding part includes: an edge region formed in a predetermined width along an outer periphery thereof; and a central region formed on a portion other than the edge region in the light shielding part. The central region is formed to have a phase shift amount of approximately 180 degrees for representative wavelength light which is included in the exposure light which transmits the light transmitting part. The edge region is formed to have a phase shift amount less than that of the central region for the representative wavelength light and an optical film which has transmittance of 50% or less for the representative wavelength light is formed on the edge region.
摘要翻译：获得的光掩模和精细图案可以被精确地转印的转印方法，以及制造平板显示器的方法。光掩模包括遮蔽曝光光的至少一部分的遮光部和将透明基板曝光在透明基板上的透光部。遮光部包括：沿其外周形成有规定宽度的边缘区域; 以及形成在除了遮光部的边缘区域以外的部分的中央区域。中心区域被形成为对于透射透光部分的曝光光中包含的代表性波长光具有大约180度的相移量。边缘区域形成为具有比代表性波长光的中心区域的相移量小的相移量，并且在边缘区域上形成对于代表性波长的光线具有50％以下的透射率的光学膜。

4. 发明公开

KR1020130134968A 위상반전 마스크 审中-实审
标题翻译：相位移屏蔽
公开(公告)号：KR1020130134968A
公开(公告)日：2013-12-10
申请号：KR1020120058904
申请日：2012-05-31
申请人： 엘지이노텍 주식회사
发明人： 배윤미 , 엄현석 , 전동욱
IPC分类号： G03F1/32
CPC分类号： G03F1/32 , G03F1/144 , G03F1/22 , G03F1/26 , G03F1/29 , G03F1/30 , G03F1/34
摘要： The present invention relates to a phase shift mask comprising: a transparent substrate; and a phase shift pattern unit located on the transparent substrate and made up of metal oxides generated by putting active oxygen selected among O2, N2, and Co2in one metal selected from Cr, Ta, Ti and Ni. According to the present invention, a phase shift mask for LCD process not the conventional phase shift mask for semiconductor processing is provided. Conventional phase shift mask for semiconductor processing processes for non-LCD can provide a phase shift mask
摘要翻译：本发明涉及一种相移掩模，包括：透明基板; 以及位于透明基板上并由选自Cr，Ta，Ti和Ni中的一种选自O 2，N 2和Co 2中的活性氧所产生的金属氧化物构成的相移图案单元。根据本发明，提供了用于LCD处理的相移掩模，而不是用于半导体处理的常规相移掩模。用于非LCD的半导体处理工艺的传统相移掩模可以提供相移掩模

5. 发明公开

KR1020130075704A 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 有权
标题翻译：用于制造光电元件的方法，光电转换器，用于传输图案的方法以及用于制造平板显示器的方法
公开(公告)号：KR1020130075704A
公开(公告)日：2013-07-05
申请号：KR1020120153728
申请日：2012-12-26
申请人： 호야 가부시키가이샤
发明人： 요시까와유따까
IPC分类号： G03F1/26 , G03F1/80 , G02F1/13
CPC分类号： G03F1/32 , G03F1/08 , G03F1/26 , G03F1/34 , G03F1/80 , G03F7/11 , H01L21/0337
摘要： PURPOSE: The photomask is provided to reduce a required time of a scanning exposure while transferring the pattern to transferred body. CONSTITUTION: The manufacturing method of the photomask comprises: a process of preparing a photomask blank (100b) in which lower layer film (20) and upper layer film (30) are laminated on the transparent substrate (10); preliminary etching process of an upper layer film etching the upper layer film by using a resist pattern (40p) which is formed on the upper layer film as a mask; lower layer film patterning process forming lower layer film pattern (20p) by etching the upper layer film which is etched with the mask; the upper layer film patterning process forming the upper layer film pattern (30p) with having the resist pattern as the mask. [Reference numerals] (AA) Exposure; (BB) Develop; (CC) Preliminary etching upper membrane; (DD) Patterning lower membrane; (EE) Patterning upper membrane; (FF) Remove registeration pattern; (GG) Side etching
摘要翻译：目的：提供光掩模以减少扫描曝光所需的时间，同时将图案转印到转印体。构成：光掩模的制造方法包括：准备在透明基板（10）上层叠有下层膜（20）和上层膜（30）的光掩模坯料（100b）的工序。通过使用形成在上层膜上的抗蚀剂图案（40p）作为掩模，上层膜的初步蚀刻工艺蚀刻上层膜; 通过蚀刻用掩模蚀刻的上层膜形成下层膜图案（20p）的下层膜图案形成工艺; 形成具有抗蚀剂图案作为掩模的上层膜图案（30p）的上层膜图案形成工艺。（附图标记）（AA）曝光; （BB）发展; （CC）初步蚀刻上膜; （DD）下膜图案; （EE）图案上膜; （FF）删除注册模式; （GG）侧蚀

6. 发明公开

KR1020130035957A 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 박막 트랜지스터의 제조 방법 有权
标题翻译：多灰度光栅，多灰度光刻胶的制造方法，图案转印方法及薄膜晶体管的制造方法
公开(公告)号：KR1020130035957A
公开(公告)日：2013-04-09
申请号：KR1020120108986
申请日：2012-09-28
申请人： 호야 가부시키가이샤
发明人： 야마구찌노보루
IPC分类号： G03F1/26 , G03F1/68
CPC分类号： G03F1/26 , G03F1/144 , G03F1/29 , G03F1/32 , G03F1/34 , G03F1/36 , H01L21/0337
摘要： PURPOSE: A multi-gray scale photomask is provided to suppress the photosensitivity of a resist film in a region separated from an interference of a transparent part or semitransparent part. CONSTITUTION: A multi-gray scale photomask(100) comprises a transcription pattern a transmittance part(102), a light shielding part(101), and a semitransparent part(103) by patterning an optical film on a transparent substrate and forms resist patterns with different residue values on an object. The optical film 180° shifts phases of representative wavelength in exposed light of the multi-gray scale photomask and has 3-50% transmittancy with regard to the representative wavelength.
摘要翻译：目的：提供多灰度光掩模以抑制与透明部分或半透明部分的干涉分离的区域中的抗蚀剂膜的光敏性。构成：多灰度光掩模（100）通过在透明基板上构图光学膜而形成透光部（102），遮光部（101）和半透明部（103）的转印图案，并形成抗蚀剂图案在对象上具有不同的残留值。光学膜180°在多灰度光掩模的曝光下移动代表性波长的相位，并且相对于代表性波长具有3-50％的透射率。

7. 发明公开

KR1020110073184A 광학 소자의 제조 방법, 광학 소자 有权
标题翻译：制造光学元件和光学元件的方法
公开(公告)号：KR1020110073184A
公开(公告)日：2011-06-29
申请号：KR1020100037430
申请日：2010-04-22
申请人： 호야 가부시키가이샤
发明人： 야마시로가즈히데 , 스다히데끼
IPC分类号： H01L21/027
CPC分类号： G03F1/34 , H01L21/0274
摘要： PURPOSE: A method for manufacturing an optical device, and the optical element are provided to use a partition pattern, thereby increasing the dimension and location accuracy of a pattern. CONSTITUTION: A light shielding unit(320) is formed on a substrate by a patterned shielding film. A light transmissive unit(311) is formed by exposing a part of the substrate. A phase shifter unit is formed by etching a part of the surface of the substrate. The phase shifter unit is adjacent to the light transmissive unit. The light shielding film and a first resist film are sequentially laminated on the substrate to form an optical element blank. A first resist pattern(303p) partitions the area where the phase shifter unit is formed and covers the area where the light shielding unit is formed by drawing and developing the first resist film.
摘要翻译：目的：制造光学器件的方法，并且提供光学元件以使用分割图案，从而增加图案的尺寸和位置精度。构成：通过图案化的屏蔽膜在基板上形成遮光单元（320）。通过暴露基板的一部分来形成透光单元（311）。通过蚀刻基板表面的一部分来形成移相器单元。移相器单元与透光单元相邻。遮光膜和第一抗蚀剂膜依次层压在基板上以形成光学元件坯料。第一抗蚀剂图案（303p）通过拉伸和显影第一抗蚀剂膜来划分形成移相器单元的区域并覆盖形成遮光单元的区域。

8. 发明公开

KR1020110067088A 다계조 포토마스크의 제조 방법 및 다계조 포토마스크와 패턴 전사 방법 无效
标题翻译：制作多灰度光栅和多灰度光栅的方法和图案转印方法
公开(公告)号：KR1020110067088A
公开(公告)日：2011-06-21
申请号：KR1020110052129
申请日：2011-05-31
申请人： 호야 가부시키가이샤
发明人： 사노미찌아끼
IPC分类号： G03F1/08 , G03F7/00 , G02F1/13
CPC分类号： G03F1/32 , G03F1/144 , G03F1/22 , G03F1/26 , G03F1/34 , G03F1/54 , G03F1/80
摘要： PURPOSE: A producing method of a multi-tone photo mask, the multi-tone photo mask, and a pattern transmitting method are provided to obtain the multi-tone photo mask with a micro pattern having the high precision. CONSTITUTION: A producing method of a multi-tone photo mask comprises the following steps: preparing a photo mask blank with a light-shielding layer(15) on a transparent substrate(14); forming a first resist pattern(30) by patterning and developing a resist film formed on the light-shielding layer; etching the light-shielding layer using the first resist pattern as a mask; forming a first half transmissive film(16) after removing the first resist film from the light-shielding layer; patterning and developing the resist film on the first half transmissive film for obtaining a second resist pattern(31); etching the first half transmissive film using the second resist pattern as a mask; forming a second half transmissive film(17) after removing the second resist pattern; obtaining a third resist pattern(32) by patterning and developing the resist film on the second half transmissive film; and etching the second half transmissive film using the third resist pattern as a mask.
摘要翻译：目的：提供一种多色调光掩模的制造方法，多色调光掩模和图案发送方法，以获得具有高精度的微图案的多色调光掩膜。构成：多色光掩模的制造方法包括以下步骤：在透明基板（14）上制备具有遮光层（15）的光掩模坯料; 通过对形成在所述遮光层上的抗蚀剂膜进行图案化和显影来形成第一抗蚀剂图案（30）; 使用第一抗蚀剂图案作为掩模蚀刻遮光层; 在从遮光层去除第一抗蚀剂膜之后形成第一半透射膜（16）; 在第一半透射膜上图案化和显影抗蚀剂膜以获得第二抗蚀剂图案（31）; 使用第二抗蚀剂图案作为掩模蚀刻第一半透射膜; 在去除所述第二抗蚀剂图案之后形成第二半透射膜（17）; 通过在第二半透射膜上构图和显影抗蚀剂膜来获得第三抗蚀剂图案（32）; 并使用第三抗蚀剂图案作为掩模蚀刻第二半透射膜。

9. 发明公开

KR1020110035925A 포토마스크, 포토마스크의 제조 방법, 패턴 전사 방법, 표시 장치용 화소 전극의 제조 방법 및 표시 장치의 제조 방법 有权
标题翻译：光电照相机，用于液晶显示装置的图案转印方法和制造方法
公开(公告)号：KR1020110035925A
公开(公告)日：2011-04-06
申请号：KR1020100093590
申请日：2010-09-28
申请人： 호야 가부시키가이샤
发明人： 요시다고이찌로
IPC分类号： G03F1/54 , G03F7/20 , G03F7/26
CPC分类号： G03F1/36 , G03F1/08 , G03F1/14 , G03F1/26 , G03F1/29 , G03F1/30 , G03F1/32 , G03F1/34 , G03F1/54 , G03F1/80
摘要： PURPOSE: A photo-mask, a method for manufacturing the photo-mask, a method for transferring patterns, and a method for manufacturing liquid crystal display device are provided to implement a patterning process with respect to a line-end space pattern with fine pitches. CONSTITUTION: A resist film(104) is formed on a target(103). A photo-mask(100) transfers a pre-set transferring pattern including a line-end space pattern on the resist film. The resist film is formed into a resist pattern(105) functioning as a mask for an etching process. The transferring pattern is formed by a transmitting part(102) and a semi-transmitting part(101) by patterning a semi-transmitting film on a transparent substrate.
摘要翻译：目的：提供一种光掩模，用于制造光掩模的方法，转印图案的方法以及制造液晶显示装置的方法，以实现相对于具有细间距的线端空间图案的图案化处理。构成：在靶（103）上形成抗蚀膜（104）。光掩模（100）在抗蚀剂膜上传送包括线端空间图案的预设转印图案。抗蚀剂膜形成为用作蚀刻工艺的掩模的抗蚀剂图案（105）。通过在透明基板上构图半透膜，由透射部（102）和半透射部（101）形成转印图案。

10. 发明授权

KR101004395B1 포토마스크 블랭크 및 포토마스크 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：KR101004395B1
公开(公告)日：2010-12-28
申请号：KR1020087027358
申请日：2005-06-10
申请人： 호야 가부시키가이샤
发明人： 시오타유키 , 노자와오사무
IPC分类号： G03F1/54 , G03F1/26 , H01L21/027
CPC分类号： G03F1/26 , G03F1/32 , G03F1/34 , G03F1/54
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength », wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0

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