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1. 发明专利

JPH11119007A BLANK AND BLACK MATRIX 失效
公开(公告)号：JPH11119007A
公开(公告)日：1999-04-30
申请号：JP27922497
申请日：1997-10-13
申请人： TOPPAN PRINTING CO LTD , ULVAC SEIMAKU KK
发明人： TANAKA KEIJI , TSUKAMOTO TAKETO , HONDA SATOSHI , SASAKI TAKAHIDE
IPC分类号： G02B5/00 , G02B1/11 , G02B1/115 , G02B5/20 , G02F1/1335
摘要： PROBLEM TO BE SOLVED: To obtain a blank having excellent productivity, high light shieldability and excellent low reflectivity by providing this blank with light shielding layers 2 contg. molybdenum and titanium. SOLUTION: The black matrix is constituted by forming light shielding layers 2 on a transparent substrate 1. At this time, the blank and black matrix have the light shielding layers 2 contg. at least the molybdenum(Mo) and the titanium(Ti). The light shielding layers 2 are composed of an alloy contg. the Mo alone or its compd. and the Ti alone or its compd. If the layers contain the Mo alone without the Ti, chemical resistances, such as water resistance and alkali resistance, are inferior but these resistances are improved by adding the Ti to the layers. The Ti is preferably incorporated into the layers at >=10 atm.% in order for the layers to sufficiently exhibit the resistance effects. If the layers contain the Ti alone without the Mo, a wet etching property degrades and patterning is difficult and, therefore, such compsn. is undesirable. The compsn. ratio of the Ti is preferably set at

2. 发明专利

JPH11119676A BLANK AND BLACK MATRIX 失效
公开(公告)号：JPH11119676A
公开(公告)日：1999-04-30
申请号：JP27585197
申请日：1997-10-08
申请人： ULVAC SEIMAKU KK , TOPPAN PRINTING CO LTD
发明人： HONDA SATOSHI , SASAKI TAKAHIDE , TANAKA KEIJI , TSUKAMOTO TAKETO
IPC分类号： G09F9/00
摘要： PROBLEM TO BE SOLVED: To obtain a black matrix containing no Cr which gives little influences on the environment and which has excellent corrosion resistance, excellent productivity, high light-shielding property and excellent low reflection and in which a pattern can be easily formed, by forming a thin film having a metal component essentially comprising Mo, Ni and Al for a light-shielding film or antireflection film. SOLUTION: This black matrix consists of a light-shielding film 2 which is directly formed as a single layer thin film essentially comprising a metal component of Mo, Ni and Al or Mo, Al and Ti and patterned on the surface of a transparent substrate 1, or the black matrix consists of a two-layer film comprising an antireflection film 3 and the light-shielding film 2. In order to obtain excellent corrosion resistance of the black matrix, especially excellent characteristics of acid resistance, alkali resistance and water resistance, the light-shielding film 2 or antireflection film 3 contains 40 to 85 atm.% Ni, 5 to 30 atm.% Mo and 10 to 30 atm.% Al, or 48 to 83 atm.% Ni, 10 to 37 atm.% Mo and 7 to 15 atm.% Ti.

3. 发明专利

JPH10301499A BLANKS OR BLACK MATRIX AND THEIR PRODUCTION 失效
公开(公告)号：JPH10301499A
公开(公告)日：1998-11-13
申请号：JP10491897
申请日：1997-04-22
申请人： ULVAC SEIMAKU KK , TOPPAN PRINTING CO LTD
发明人： HONDA SATOSHI , SASAKI TAKAHIDE , TOKU AKIHIKO , TANAKA KEIJI , UEYAMA KOUSUKE
IPC分类号： G02F1/1335 , G09F9/00
摘要： PROBLEM TO BE SOLVED: To provide a black matrix which less affects the environment, has chemical resistance and heat resistance, allow the pattern formation by a conventional Cr wet etching soln., provides excellent productivity and has high light shieldability and excellent low reflectiveness. SOLUTION: The light shielding films 2 or antireflection films 3a, 3b of the black matrix consisting of the light shielding films 2 or the light shielding films 2 and antireflection films 3a, 3b formed in direct or indirect adhesion onto the surface of a transparent substrate 1 are formed as thin films consisting of essentially metal components of Mo and Ni. The transparent substrate 1 is installed in a vacuum chamber and the light shielding films 2 are formed thereon by a sputtering method by using a sputter target consisting of the Mo and Ni as the essential components of the metallic components and using a gaseous mixture formed by adding gaseous Ar to an atmosphere gas or adding at least one reactive gas among O2 , N2 , NO, CO2 and CH4 to this gaseous Ar.

4. 发明专利

JP2005149956A Method and apparatus for performing plasma processing with high uniformity over large area 审中-公开
标题翻译：用于大面积高均匀性处理等离子体处理的方法和装置
公开(公告)号：JP2005149956A
公开(公告)日：2005-06-09
申请号：JP2003387060
申请日：2003-11-17
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： KUWAHARA KIYOSHI , HAYASHI TOSHIO , KIKUCHI MASASHI , IKEDA HITOSHI , YAMAGATA TAKAHIRO , IWATA KENICHI , HARASHIMA NORIYUKI , SASAKI TAKAHIDE
IPC分类号： H05H1/46 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for performing plasma processing with high uniformity over a large area, which overcome drawbacks of a conventional processing method. SOLUTION: The apparatus for performing plasma processing with high uniformity over a large area uses a high frequency power supply of 1 MHz or higher such as a radio frequency or a microwave. The apparatus comprises a nozzle or a gas ejecting hole, and also comprises at least one gas feeding system configured to subject a process gas to plasma-decomposition to thereby intensively introduce a process gas species into a discharge space where plasma is generated. A substrate is placed perpendicularly to the gas feeding system in a region which is affected by the gas flow in a downstream area of a plasma generating section. The apparatus further comprises a gas exhaust system configured so that the gas flow is selectable from a molecular flow to a viscous flow in a region from the nozzle or gas ejecting hole of the gas feeding system to the surface of the substrate. In the method for performing plasma processing on a substrate having a large area using a high frequency power supply of 1 MHz or higher such as a radio frequency or a microwave, the process gas is subjected to plasma-decomposition so as to intensively introduce the process gas into the discharge space where plasma is generated. A shock wave is thereby generated to cause movement of the gas due to a compressional wave on the surface of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在大面积上以高均匀性进行等离子体处理的方法和装置，其克服了常规处理方法的缺点。解决方案：在大面积上以高均匀性进行等离子体处理的装置使用1MHz以上的高频电源，例如射频或微波。该装置包括喷嘴或气体喷射孔，并且还包括至少一个气体供给系统，其构造成使处理气体进行等离子体分解，从而将工艺气体物质集中地引入到产生等离子体的放电空间中。在受等离子体产生部分的下游区域中的气流影响的区域中，垂直于气体供给系统放置衬底。该装置还包括气体排出系统，其被构造成使得气体流可以从在气体供给系统的喷嘴或气体喷射孔到基底表面的区域中的分子流到粘性流可选择。在使用1MHz以上的高频电源（例如射频或微波）在具有大面积的基板上进行等离子体处理的方法中，对处理气体进行等离子体分解，从而将该工序气体进入产生等离子体的放电空间。由此产生冲击波，使得由于压缩波而导致的气体在基板的表面上移动。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2003073860A Multilayer-type transparent electroconductive film, and method for patterning the film 审中-公开
标题翻译：多层透明电磁膜，以及用于绘制电影的方法
公开(公告)号：JP2003073860A
公开(公告)日：2003-03-12
申请号：JP2001260927
申请日：2001-08-30
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： UKISHIMA YOSHIYUKI , ITO MASAHIRO , ICHINOHE YUJI , RI KETSUKI , KOMATSU TAKASHI , OKASAKA KENSUKE , FUJII KENJI , SASAKI TAKAHIDE
IPC分类号： H05B33/10 , C23C14/06 , C23C14/08 , C23C28/00 , C23F1/00 , C23F1/30 , H01L51/50 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a technology for patterning a multilayer-type transparent electroconductive film.
SOLUTION: The transparent electroconductive film has a multilayer structure comprising a first ITO film, a metallic thin film, and a second ITO film, and is characterized by not exposing the film to an atmosphere of 300°C or higher, through start of formation to etching of the transparent film, to make the first and the second ITO films keep an amorphous structure. The ITO film having the amorphous structure, and a crystallized ITO film are respectively shown in the Fig. 10 (a, b) and (c) in the specification. Then, the first and the second ITO films having the amorphous structure can be etched by oxalic acid.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种图案化多层型透明导电膜的技术。解决方案：透明导电膜具有包括第一ITO膜，金属薄膜和第二ITO膜的多层结构，其特征在于，通过开始形成，不使膜暴露于300℃以上的气氛以蚀刻透明膜，使第一和第二ITO膜保持非晶结构。具有非晶结构的ITO膜和结晶化的ITO膜分别如图1所示。 10（a，b）和（c）。然后，可以用草酸蚀刻具有非晶结构的第一和第二ITO膜。

6. 发明专利

JP2004002111A Method of forming optical thin film for display window material and optical thin film structure 审中-公开
公开(公告)号：JP2004002111A
公开(公告)日：2004-01-08
申请号：JP2002160352
申请日：2002-05-31
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： NAKAYAMA TAKAHIRO , MIURA OSAMU , MURAKAMI HIROHIKO , MATSUZAKI KANENORI , KURAUCHI TOSHIHARU , MISAWA SHUNJI , TAMAGAWA KOICHI , OKASAKA KENSUKE , FUJII KENJI , SASAKI TAKAHIDE
IPC分类号： G02B1/11 , C03C17/34 , G02B1/10 , G02B1/111 , G09F9/30 , H01L51/50 , H05B33/02 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a method of forming an optical thin film for a display window material by which the sticking strength of a porous silica material to a transparent conductive film is improved in forming the optical thin film by lamination while having a low refractive index film consisting of the porous silica material and the transparent conductive film in order to highly efficiently take out luminescence and an optical thin film structure formed using the method. SOLUTION: The optical thin film structure is formed by laminating the transparent conductive film 2 and the low refractive index film 3 consisting of the hydrophobic porous silica material through an intermediate adhesive layer 4 composed of a transparent insulation layer such as a SiO 2 film on a glass substrate 1. In such a case, it is desirable that the low refractive index film 3 consisting of the hydrophobic porous silica material has 0.3-2.0 μm film thickness and ≤50 nm flatness expressed by the center line average roughness and the intermediate adhesive layer 4 composed of the transparent insulation film has 5-300 nm film thickness and ≤50 nm flatness expressed by the center line average roughness. COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2000150464A METHOD AND DEVICE FOR DRY ETCHING 失效
公开(公告)号：JP2000150464A
公开(公告)日：2000-05-30
申请号：JP32859598
申请日：1998-11-18
申请人： ULVAC SEIMAKU KK
发明人： HARASHIMA NORIYUKI , HAYASHI ATSUSHI , SASAKI TAKAHIDE
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a good in-plane evenness in a pattern dimension of a chrome mask by using a square or trapezoidal wave AC instead of sine wave AC as a current flowing a magnetic field generating coil for stronger magnetic field, and raising the magnitude of the resultant magnetic field vector at four corner parts for slower etching. SOLUTION: An RF electrode surface 10 provided in an etching chamber 2 is provided with a photo-mask substrate 11 which is covered with a pattern material, over which a photo-resist with a pattern formed is provided, the magnetic field generating coil of two pairs of electromagnets 5, 6, 7, and 8 is applied with a square wave current or trapezoidal current with phase deviated by 90 deg.C, the resultant magnetic field is rotated in the plane parallel to a substrate, and the pattern material is etched by reactive ion etching. The magnitude of the resultant vector is larger compared to the case of sine wave. Here, the current is deformed so that the rotary magnetic field intensity is enhanced at four corner parts, for suppressing the rise of etching speed, resulting in good in-plane evenness of pattern dimension.

8. 发明专利

JP2000138201A METHOD AND SYSTEM FOR DRY ETCHING OF HALF-TONE PHASE SHIFTED FILM, HALF-TONE PHASE SHIFTED PHOTOMASK AND MANUFACTURE THEREOF, AND SEMICONDUCTOR CIRCUIT AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000138201A
公开(公告)日：2000-05-16
申请号：JP30901098
申请日：1998-10-29
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： SASAKI TAKAHIDE , HARASHIMA NORIYUKI , AOYAMA SATORU , SAKAMOTO SHOICHI
IPC分类号： H01L21/302 , C23F4/00 , G03F1/32 , G03F1/68 , G03F1/80 , H01L21/306 , H01L21/3065 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To reduce dimensional differences due to inconsistencies in pattern density in a plane by using a mixed gas, wherein a reducing gas is added to a reactive ion etching gas consisting of an oxygen-containing gas and a halogen- containing gas as a reactive etching gas. SOLUTION: A dry etching system (MERIE system) allows dry etching to a chromic half-tone phase shift film. At this time, a mixed gas wherein a gas containing at least hydrogen, such as H2, and HCl gas, is added to a halogen- containing gas such as Cl2+O2 is used. This enables dimensional control with in a plane which is equal to that of a mask wherein patterns are formed in generally uniform density in a plane, namely, which can extremely reduce dimensional differences in the design dimension of one to two μm wide, even in a chromic half-tone phase shift photomask, wherein film and rough patterns coexist within a plane.

9. 发明专利

JP2006324209A METHOD OF MANUFACTURING COLD-CATHODE ELEMENT 审中-公开
公开(公告)号：JP2006324209A
公开(公告)日：2006-11-30
申请号：JP2005148476
申请日：2005-05-20
申请人： JAPAN BROADCASTING CORP , ULVAC CORP , ULVAC SEIMAKU KK
发明人： HAGIWARA HIROSHI , TAKEI TATSUYA , ATOZAWA MIZUYOSHI , HIRAKAWA MASAAKI , NAKANO MINAO , MURAKAMI HIROHIKO , OKASAKA KENSUKE , SASAKI TAKAHIDE
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a cold-cathode element capable of restraining unevenness of electron emitting characteristics. SOLUTION: The method of manufacturing the cold-cathode element comprises a process of imparting a surface of a fluorinated photoresist layer 16 with a hydrophylic property by dissolving or removing the surface thereof by a prescribed size, and a process of weakening a water repellent property generated on the surface of the photoresist layer 16 by immersing the photoresist layer in etching solution in which a surfactant is added. The etching solution is made easy to penetrate into holes formed on an insulation layer 13 when applying wet etching. COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2006162942A Blanks and its formation method, and black matrix using the blanks and its formation method 审中-公开
标题翻译： BLANKS及其形成方法和使用空白的黑色矩阵及其形成方法
公开(公告)号：JP2006162942A
公开(公告)日：2006-06-22
申请号：JP2004353917
申请日：2004-12-07
申请人： Ulvac Seimaku Kk , アルバック成膜株式会社
发明人： YAMADA FUMIHIKO , SASAKI TAKAHIDE , OZAKI TOSHIHARU , HIRAMOTO TAKESHI , SUZUKI TORU
IPC分类号： G02B5/20 , C23C14/06 , G02B1/11 , G02F1/1335
摘要： PROBLEM TO BE SOLVED: To provide blanks or a black matrix which is provided with weather resistance accommodating high-load processing conditions accompanied by the development of display technique, moreover, has excellent low reflection performance, excellent light shielding property and excellent working property and has a low environmental load. SOLUTION: In the blanks or the black matrix comprising a light shielding film or a light shielding film and antireflection film which is directly or indirectly attached and formed on the surface of a transparent substrate, the light shielding film has a metal component of the light shielding film consisting essentially of Ni, Mo and Ti and is constituted as a thin film having a Ti content of 10 to 25 atom%. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有适应高显示技术发展的高负载处理条件的耐气候性的空白或黑色矩阵，并且具有优异的低反射性能，优异的遮光性和优异的加工性属性，环境负荷低。解决方案：在包括直接或间接附着并形成在透明基板的表面上的遮光膜或遮光膜和抗反射膜的黑色或黑色矩阵中，遮光膜具有金属成分基本上由Ni，Mo和Ti组成的遮光膜构成Ti含量为10〜25原子％的薄膜。版权所有（C）2006，JPO＆NCIPI

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