专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2005149956A Method and apparatus for performing plasma processing with high uniformity over large area 审中-公开
标题翻译：用于大面积高均匀性处理等离子体处理的方法和装置
公开(公告)号：JP2005149956A
公开(公告)日：2005-06-09
申请号：JP2003387060
申请日：2003-11-17
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： KUWAHARA KIYOSHI , HAYASHI TOSHIO , KIKUCHI MASASHI , IKEDA HITOSHI , YAMAGATA TAKAHIRO , IWATA KENICHI , HARASHIMA NORIYUKI , SASAKI TAKAHIDE
IPC分类号： H05H1/46 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for performing plasma processing with high uniformity over a large area, which overcome drawbacks of a conventional processing method. SOLUTION: The apparatus for performing plasma processing with high uniformity over a large area uses a high frequency power supply of 1 MHz or higher such as a radio frequency or a microwave. The apparatus comprises a nozzle or a gas ejecting hole, and also comprises at least one gas feeding system configured to subject a process gas to plasma-decomposition to thereby intensively introduce a process gas species into a discharge space where plasma is generated. A substrate is placed perpendicularly to the gas feeding system in a region which is affected by the gas flow in a downstream area of a plasma generating section. The apparatus further comprises a gas exhaust system configured so that the gas flow is selectable from a molecular flow to a viscous flow in a region from the nozzle or gas ejecting hole of the gas feeding system to the surface of the substrate. In the method for performing plasma processing on a substrate having a large area using a high frequency power supply of 1 MHz or higher such as a radio frequency or a microwave, the process gas is subjected to plasma-decomposition so as to intensively introduce the process gas into the discharge space where plasma is generated. A shock wave is thereby generated to cause movement of the gas due to a compressional wave on the surface of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在大面积上以高均匀性进行等离子体处理的方法和装置，其克服了常规处理方法的缺点。解决方案：在大面积上以高均匀性进行等离子体处理的装置使用1MHz以上的高频电源，例如射频或微波。该装置包括喷嘴或气体喷射孔，并且还包括至少一个气体供给系统，其构造成使处理气体进行等离子体分解，从而将工艺气体物质集中地引入到产生等离子体的放电空间中。在受等离子体产生部分的下游区域中的气流影响的区域中，垂直于气体供给系统放置衬底。该装置还包括气体排出系统，其被构造成使得气体流可以从在气体供给系统的喷嘴或气体喷射孔到基底表面的区域中的分子流到粘性流可选择。在使用1MHz以上的高频电源（例如射频或微波）在具有大面积的基板上进行等离子体处理的方法中，对处理气体进行等离子体分解，从而将该工序气体进入产生等离子体的放电空间。由此产生冲击波，使得由于压缩波而导致的气体在基板的表面上移动。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005133171A Method for etching chromium film, and method for manufacturing photomask 有权
标题翻译：蚀刻铬膜的方法和制造光电子的方法
公开(公告)号：JP2005133171A
公开(公告)日：2005-05-26
申请号：JP2003372085
申请日：2003-10-31
申请人： Semiconductor Leading Edge Technologies Inc , Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック , 株式会社半導体先端テクノロジーズ
发明人： TANAKA YOSHIYUKI , HARASHIMA NORIYUKI , SASAKI TAKAHIDE , KUWABARA KIYOSHI , HAYASHI TOSHIO
IPC分类号： H05H1/46 , C23F4/00 , G03F1/54 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for etching a chromium film uniformly within the surface with a high etching rate, when etching the film with the use of an etching apparatus using a magnetic neutral line.
SOLUTION: The etching apparatus comprises a magnetic coil for forming the magnetic neutral line inside a vacuum chamber, and an antenna for forming an alternating electric field along the magnetic neutral line to generate dense plasma in the vicinity of the magnetic neutral line. In the method for etching the chromium film using the etching apparatus, when a magnetic field gradient in the vicinity of the magnetic neutral line formed by the magnetic coil is controlled to 2 gauss/cm, the magnetic neutral line with a radius of 35 mm or smaller, is formed by controlling a value of a current passing through the magnetic coil and the magnetic neutral line generates plasma.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供以高蚀刻速率在表面内均匀蚀刻铬膜的方法，当使用使用磁性中性线的蚀刻装置蚀刻该膜时。解决方案：蚀刻装置包括用于在真空室内形成磁中性线的磁线圈，以及用于沿着磁中性线形成交变电场的天线，以在磁中性线附近产生致密等离子体。在使用蚀刻装置蚀刻铬膜的方法中，当由磁性线圈形成的磁性中性线附近的磁场梯度被控制为2高斯/ cm时，半径为35mm的磁性中性线或通过控制通过磁线圈的电流的值而形成的较小，并且磁性中性线产生等离子体。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2003282547A Method and apparatus for performing plasma treatment with high selectivity and high uniformity over large area 审中-公开
标题翻译：在大面积高选择性和高均匀性下进行等离子体处理的方法和装置
公开(公告)号：JP2003282547A
公开(公告)日：2003-10-03
申请号：JP2002086352
申请日：2002-03-26
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： KIKUCHI MASASHI , IKEDA HITOSHI , KUWAHARA KIYOSHI , HAYASHI TOSHIO , HARASHIMA NORIYUKI , SASAKI TAKAHIDE
IPC分类号： H05H1/46 , C03C15/00 , C03C17/06 , H01L21/3065
CPC分类号： C03C17/06 , C03C15/00 , C03C2217/26 , C03C2218/33
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for performing plasma treatment with high selectivity and high precision over a large area using pulse-modulated plasma. SOLUTION: This method for plasma treatment is constituted by respectively applying pulse-modulated electric power to a plasma-generating power source and to a substrate-bias power source, wherein a pulse modulation is based on the diffusion time of gas from the central part of discharge to the substrate. The apparatus for the plasma treatment is furnished with a modulation means for applying the pulse-modulated electric power to the plasma-generating part and one to the substrate electrode, respectively in the plasma-generating power source and in the substrate bias power source, wherein the pulse modulation is based on the diffusion time of the gas from the central part of discharge to the substrate. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种使用脉冲调制等离子体在大面积上以高选择性和高精度执行等离子体处理的方法和装置。解决方案：这种等离子体处理方法是通过分别向等离子体产生电源和衬底偏置电源施加脉冲调制电力构成的，其中脉冲调制基于来自中心部分放电到基板。用于等离子体处理的装置配备有调制装置，用于分别在等离子体发生电源和衬底偏置电源中将脉冲调制电力施加到等离子体产生部分和一个到基板电极，其中脉冲调制基于气体从放电中心部分到衬底的扩散时间。版权所有（C）2004，JPO

4. 发明专利

JP2005251901A Dry etching method of interlayer insulation film 有权
标题翻译：中间层绝缘膜的干蚀刻方法
公开(公告)号：JP2005251901A
公开(公告)日：2005-09-15
申请号：JP2004058826
申请日：2004-03-03
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： MORIKAWA YASUHIRO , HAYASHI TOSHIO , SUU KOUKO
IPC分类号： H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To solve the problem that an embedded layer is hardly etched and a polymer residual is generated around the embedded layer remaining in a trench, when performing the trench etching of an interlayer insulation film having a low relative dielectric constant in which an organic-based embedded layer is formed on an upper surface including the inside of a via hole collectively using a prescribed etching gas when forming a dual damascene structure.
SOLUTION: A trench for wiring is micromachined in two stages; a process for selectively etching an organic-based embedded layer 35 at the initial stage of etching by introducing the etching gas into a plasma atmosphere by using the etching gas containing a nitrogen atom; and a process for micromachining the trench for wiring by introducing the etching gas into the plasma atmosphere using the etching gas containing fluorocarbon gas.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了解决嵌入层几乎不被蚀刻并且残留在沟槽中的嵌入层周围产生聚合物残留的问题，当对具有低相对介电常数的层间绝缘膜进行沟槽蚀刻时其中当形成双镶嵌结构时，在包括通孔的内部的上表面上共同地使用规定的蚀刻气体形成有机基嵌入层。
解决方案：用于布线的沟槽分两个阶段进行微加工; 通过使用包含氮原子的蚀刻气体将蚀刻气体引入等离子体气氛中，在蚀刻的初始阶段选择性蚀刻有机基嵌入层35的工艺; 以及通过使用含有碳氟化合物气体的蚀刻气体将蚀刻气体引入等离子体气氛中来微细加工用于布线的沟槽的工艺。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005130198A High frequency device 审中-公开
标题翻译：高频器件
公开(公告)号：JP2005130198A
公开(公告)日：2005-05-19
申请号：JP2003363580
申请日：2003-10-23
申请人： Adtec Plasma Technology Co Ltd , Ulvac Japan Ltd , 株式会社アドテックプラズマテクノロジー , 株式会社アルバック
发明人： KUWABARA KIYOSHI , KIKUCHI MASASHI , HAYASHI TOSHIO , FUJII SHUITSU
IPC分类号： H05H1/46 , H03H7/40
摘要： PROBLEM TO BE SOLVED: To stably supply a high frequency power with high reproducibility by quickly leading a reflected power generated at the time of supply of a high frequency power, to a minimum value.
SOLUTION: High frequency power sources 11a and 11b capable of supplying a high frequency power to a load and matching boxes 12a and 12b are provided so as to be operated by switching. High frequency reflected power detection means 13a and 13b and a control signal generator 14 are provided between the high frequency power sources and matching boxes, and a fundamental control signal is outputted from the control signal generator to the high frequency power sources, and an external control signal is outputted to the matching boxes and high frequency reflected power detection means with delay of a prescribed time. Reflected power signals are fed back to the control signal generator synchronously with the external control signal, and control signal parameters of the external control signal for temporal variance of the load are controlled to perform matching so that the reflected power signals have a minimum value.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过将高频功率供给时产生的反射功率快速地引导到最小值来稳定地提供具有高再现性的高频功率。解决方案：能够向负载和匹配盒12a和12b提供高频功率的高频电源11a和11b被设置成通过切换来操作。高频反射功率检测装置13a和13b以及控制信号发生器14设置在高频电源和匹配盒之间，基本控制信号从控制信号发生器输出到高频电源，外部控制信号以规定时间的延迟输出到匹配箱和高频反射功率检测装置。将反射功率信号与外部控制信号同步地反馈到控制信号发生器，并且控制用于负载的时间变化的外部控制信号的控制信号参数以进行匹配，使得反射功率信号具有最小值。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005033026A Method of dry-treating surface of insulating film 有权
标题翻译：干法处理绝缘膜表面的方法
公开(公告)号：JP2005033026A
公开(公告)日：2005-02-03
申请号：JP2003271252
申请日：2003-07-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： MORIKAWA YASUHIRO , HAYASHI TOSHIO , SUU KOUKO
IPC分类号： H05H1/46 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method of dry-treating surface of insulating film by which no damage is given to a low-k film regardless of the material of the film, and to provide a surface dry-treating device that realizes the method. SOLUTION: By a method for surface treatment in which the hydrophobic surface of a low-dielectric constant interlayer insulating film is changed to a hydrophilic surface, a highly reliable LSI device can be provided by generating plasma by discharging electricity into a rare gas in a vacuum adjusted to a prescribed pressure and by using the method of dry-treating the surface of the low-dielectric constant interlayer insulating film in which the surface of the interlayer insulating film is exposed to the plasma atmosphere and the surface dry-treating device which realizes the method. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种干燥处理绝缘膜的表面的方法，由此不影响低k膜的损伤，而不管膜的材料如何，并且提供一种表面干燥处理装置，实现方法。解决方案：通过将低介电常数层间绝缘膜的疏水性表面变为亲水性表面的表面处理方法，可以通过将电放电到稀有气体中而产生等离子体来提供高可靠性的LSI器件在调整到规定压力的真空中，并且使用将层间绝缘膜的表面暴露于等离子体气氛的低介电常数层间绝缘膜的表面进行干法处理的方法和表面干燥处理装置实现了该方法。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004071856A Etching method 有权
公开(公告)号：JP2004071856A
公开(公告)日：2004-03-04
申请号：JP2002229603
申请日：2002-08-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： MORIKAWA YASUHIRO , HAYASHI TOSHIO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching method causing no surface rougheness on a surface of a low dielectric constant insulating film.
SOLUTION: Even if the surface of the low dielectric constant insulating film 15 is roughened when a cap layer 16 is removed in a first etching step, a reaction where a thin film is formed on the surface of the low dielectric constant insulating film 15 to fill recesses progresses simultaneously with a reaction of etching the surface when etching is performed slowly at a rate of 100 nm/min or less by introducing hydrofluorocarbon (HFC) gas, as a second reaction gas, into vacuum atmosphere following the first etching step and the surface of the low dielectric constant insulating film 15 is planarized.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2010288285A High frequency device 有权
标题翻译：高频器件
公开(公告)号：JP2010288285A
公开(公告)日：2010-12-24
申请号：JP2010137097
申请日：2010-06-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KUWABARA KIYOSHI , KIKUCHI MASASHI , HAYASHI TOSHIO , FUJII SHUITSU
IPC分类号： H03H7/40 , H05H1/46 , C23C16/505 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To supply high frequency power stably with excellent reproducibility by speedily leading reflection power, which is generated when high frequency power is input, to a minimal value. SOLUTION: A high frequency power source 11 capable of supplying high frequency power to a load 2 and a matching box 12 are provided so as to perform switching operation. Between the high frequency power source and the matching box, a high frequency reflection power detector 13 and a control signal generator 14 are provided, a fundamental control signal is output from the control signal generator 14 to the high frequency power source 11, and an external control signal is output to the matching box 12 and the high frequency reflection power detector 13 with delay of a predetermined time. Synchronously with the output of the external control signal, a reflection power signal is enabled to be fed back to the control signal generator 14, and a control signal parameter of the external control signal is adjusted with respect to temporal variation of the load so that the reflection power signal becomes a minimum value, thereby performing a matching. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过将输入高频功率时产生的反射功率快速引导到最小值，以优异的再现性稳定地提供高频功率。解决方案：提供能够向负载2和匹配箱12提供高频功率的高频电源11，以进行开关操作。在高频电源和匹配箱之间，设置有高频反射功率检测器13和控制信号发生器14，从控制信号发生器14向高频电源11输出基本控制信号，外部控制信号以预定时间的延迟输出到匹配箱12和高频反射功率检测器13。与外部控制信号的输出同步，反射功率信号能够被反馈到控制信号发生器14，并且相对于负载的时间变化调整外部控制信号的控制信号参数，使得反射功率信号成为最小值，从而进行匹配。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2006148179A Reactive ion etching apparatus 有权
标题翻译：反应离子蚀刻装置
公开(公告)号：JP2006148179A
公开(公告)日：2006-06-08
申请号：JP2006060657
申请日：2006-03-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： CHIN TAKASHI , ITO MASAHIRO , HAYASHI TOSHIO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a reactive ion etching apparatus that is adaptable to a fine work smaller 0.3 μm width, without substantially changing the structures of a cathode-coupled etching apparatus and a three-electrode etching apparatus, which are used conventionally.
SOLUTION: In a reactive dry etching apparatus according to the present invention, a magnetic field generating means for forming circular magnetic neutral lines at the magnetic field zero position, which exist in succession in a vacuum chamber, is provided.
COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2005251814A Dry etching method and apparatus of interlayer insulation film 有权
标题翻译：干式绝缘膜的干蚀刻方法及装置
公开(公告)号：JP2005251814A
公开(公告)日：2005-09-15
申请号：JP2004056962
申请日：2004-03-02
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： MORIKAWA YASUHIRO , HAYASHI TOSHIO , SUU KOUKO
IPC分类号： H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To solve the problem that a resist mask becomes fragile when fine patterning is made by a laser having a short wavelength in a photolithography process, a resist mask is damaged and edge roughness is generated at the edge of a patterned region when etching is made in a plasma atmosphere in this case, and no uniform etching shapes is obtained in a depth direction.
SOLUTION: Mixed gas containing fluorocarbon gas and hydrocarbon gas having a flow rate of 1-3 times larger than that of the fluorocarbon gas is used. The mixed gas is introduced under a working pressure of 0.5 Pa or smaller in the plasma atmosphere for etching the interlayer insulation film covered with the resist mask.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了解决当在光刻工艺中通过具有短波长的激光进行精细图案化时抗蚀剂掩模变得脆弱的问题，抗蚀剂掩模被损坏并且在边缘处产生边缘粗糙度在这种情况下在等离子体气氛中进行蚀刻时，在深度方向上没有得到均匀的蚀刻形状。
解决方案：使用含氟碳气体和烃气体的混合气体，其流量比碳氟化合物气体的流量大1-3倍。在等离子体气氛中，在0.5Pa以下的工作压力下引入混合气体，以蚀刻由抗蚀掩模覆盖的层间绝缘膜。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式