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1. 发明专利

JPH0874031A PRODUCTION OF PHASE-SHIFT PHOTOMASK BLANK, PHASE-SHIFT PHOTOMASK BLANK AND PHASE-SHIFT PHOTOMASK 失效
公开(公告)号：JPH0874031A
公开(公告)日：1996-03-19
申请号：JP21479294
申请日：1994-09-08
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA MAE , SAITO YOSHIHIRO , YAMAMOTO TSUNEO , HAYASHI ATSUSHI , YOSHIOKA NOBUYUKI , CHIBA AKIRA , MIYAZAKI JUNJI
IPC分类号： C23C14/06 , C23C14/34 , G03F1/32 , G03F1/68 , H01L21/027
摘要： PURPOSE: To provide a phase-shift photomask blank suitable to UV exposure and highly resistant to chemicals. CONSTITUTION: Gaseous nitrogen monoxide is added by 2.65-6vol.%, then a molybdenum silicide target is sputtered, and a molybdenum silicide oxynitride film is formed on a transparent substrate. This film is suitable to the phase-shift film in a KrF excimer laser wavelength and highly resistant to chemicals. Since the chemical resistance is especially improved when the proportion of the gaseoous nitrogen monoxide is low, the film is used as the protective film of the phase-shift film by adding 0.5-6vol.%. The process variation of the transmittance is reduced when the film is heat-treated at >=200 deg.C, and the transmittance is increased in the exposure wavelength.

2. 发明专利

JPH0756317A METHOD FOR ADJUSTING PHASE DIFFERENCE OF PHASE PHOTOMASK 失效
公开(公告)号：JPH0756317A
公开(公告)日：1995-03-03
申请号：JP20084493
申请日：1993-08-12
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKORO YASUO , TOKU AKIHIKO , HAYASHI ATSUSHI
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , G03F1/08
摘要： PURPOSE:To provide a method for adjusting a phase shift difference which produces a phase shift photomask having the desired phase shift difference. CONSTITUTION:The substrate in apertures 5 is etched in order to compensate the phase shift difference of a deficient-component if the film thickness of phase shift films 3, 13 of phase shift photomasks 1, 11 formed with circuit patterns is insufficient. The phase shift films of phase shift parts 16 are etched if the film thickness is excessive. The phase shift photomask 11 having the target phase shift difference is thus obtd. The phase shift parts are protected by a positive resist and the apertures 15 by a negative resist if the positive resist or negative resist is applied thereon at the time of etching and is previously exposed and developed. The parts for which the etching is not required are thus protected.

3. 发明专利

JP2007133098A Gray tone mask and method for manufacturing the same 有权
标题翻译：灰色面具及其制造方法
公开(公告)号：JP2007133098A
公开(公告)日：2007-05-31
申请号：JP2005325280
申请日：2005-11-09
申请人： Ulvac Seimaku Kk , アルバック成膜株式会社
发明人： HAYASHI ATSUSHI , YAMADA FUMIHIKO , ENARI YUICHI , ISHIZUKA MASAHIKO
IPC分类号： G03F1/54 , G03F1/58 , G03F1/68
摘要： PROBLEM TO BE SOLVED: To provide a gray tone mask having chemical resistance (for example, against sulfuric acid) and mechanical strength required for a mask process, necessary for techniques to reduce a cost in manufacturing a liquid crystal color display, and having excellent processability and to provide a method for manufacturing the mask. SOLUTION: The gray tone mask has a pattern comprising a light shielding part, an opening and a semitransmitting part, wherein a semitransmitting film constituting the semitransmitting part is composed of a metal Cr film formed as a first thin film, and a Cr oxide film or a Cr oxide nitride film or a Cr nitride film as a second thin film formed on the first thin film. The method for manufacturing the gray tone mask comprises forming a semitransmitting film in a part of an opening in a Cr film photomask formed in a photolithographic process. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有降低制造液晶彩色显示器的成本所需的技术所必需的具有耐化学性（例如，耐硫酸）和掩模工艺所需的机械强度的灰度调色剂掩模，以及具有优异的可加工性并提供一种制造掩模的方法。解决方案：灰色调掩模具有包括遮光部分，开口和半透射部分的图案，其中构成半透射部分的半透膜由形成为第一薄膜的金属Cr膜和Cr 氧化膜或Cr氧化物氮化物膜或作为形成在第一薄膜上的第二薄膜的Cr氮化物膜。灰色调掩模的制造方法包括在光刻工序中形成的Cr膜光掩模的开口部分形成半透膜。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2000150464A METHOD AND DEVICE FOR DRY ETCHING 失效
公开(公告)号：JP2000150464A
公开(公告)日：2000-05-30
申请号：JP32859598
申请日：1998-11-18
申请人： ULVAC SEIMAKU KK
发明人： HARASHIMA NORIYUKI , HAYASHI ATSUSHI , SASAKI TAKAHIDE
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a good in-plane evenness in a pattern dimension of a chrome mask by using a square or trapezoidal wave AC instead of sine wave AC as a current flowing a magnetic field generating coil for stronger magnetic field, and raising the magnitude of the resultant magnetic field vector at four corner parts for slower etching. SOLUTION: An RF electrode surface 10 provided in an etching chamber 2 is provided with a photo-mask substrate 11 which is covered with a pattern material, over which a photo-resist with a pattern formed is provided, the magnetic field generating coil of two pairs of electromagnets 5, 6, 7, and 8 is applied with a square wave current or trapezoidal current with phase deviated by 90 deg.C, the resultant magnetic field is rotated in the plane parallel to a substrate, and the pattern material is etched by reactive ion etching. The magnitude of the resultant vector is larger compared to the case of sine wave. Here, the current is deformed so that the rotary magnetic field intensity is enhanced at four corner parts, for suppressing the rise of etching speed, resulting in good in-plane evenness of pattern dimension.

5. 发明专利

JPH05230673A DRY ETCHING DEVICE 失效
公开(公告)号：JPH05230673A
公开(公告)日：1993-09-07
申请号：JP7278892
申请日：1992-02-24
申请人： ULVAC SEIMAKU KK
发明人： HAYASHI ATSUSHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PURPOSE:To obviate the generation of various defects, such as staining of a base body, during an etching treatment and transportation before and after the etching treatment and to improve the uniformity of the etching depth of the base body in the etching treatment. CONSTITUTION:The base body 1 to be etched of the dry etching device is mounted in a recess provided atop 2a a carrier 2 having a flat shape in such a manner that the front surface 1a of the base body 1 does not project by a prescribed value or above from the front surface 2a of the carrier 2. The base body is transported as it is by a transporting means on a high-frequency electrode 10 in an etching treatment chamber 40A and is subjected to the etching treatment. The base body 1 is again held mounted on the carrier 2 and transferred in this state by the transporting means from the etching treatment chamber 40 after the end of the etching treatment.

6. 发明专利

JP2009098206A Method of manufacturing gray tone mask, and gray tone mask 有权
标题翻译：制作灰色面膜的方法和灰色面膜
公开(公告)号：JP2009098206A
公开(公告)日：2009-05-07
申请号：JP2007266971
申请日：2007-10-12
申请人： Ulvac Seimaku Kk , アルバック成膜株式会社
发明人： YAMADA FUMIHIKO , OZAKI TOSHIHARU , SASAKI TAKAHIDE , ISHIZUKA MASAHIKO , KAGEYAMA KAGEHIRO , ISO HIROYUKI , KOBAYASHI RYOICHI , HAYASHI ATSUSHI
IPC分类号： G03F1/00 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a gray tone mask for improving processing performance and reducing manufacturing cost. SOLUTION: The manufacturing method includes a process for forming a first opening 11a on a substrate S by applying etching on Cr film blanks 10 forming a Cr film on the substrate S by using a Cr etching liquid. Next, a semi-light transmissive film 14 made by at least any one kind of substance selected from among a group of Ni-Al, Ni-Cr, these oxides, oxynitride, and nitride is formed in the first opening 11a to form a semi-light transmissive part 15 in the first opening 11a. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造灰色调掩模的方法，以提高处理性能并降低制造成本。解决方案：制造方法包括通过使用Cr蚀刻液体在基板S上形成Cr膜的Cr膜坯10上对基板S形成第一开口11a的工艺。接下来，在第一开口11a中形成由选自Ni-Al，Ni-Cr，这些氧化物，氮氧化物和氮化物中的至少一种物质制成的半透光膜14，以形成半第一开口11a中的透光部15。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2002033306A METHOD OF CONTROLLING SPATIAL DISTRIBUTION OF INDUCTIVELY- COUPLED PLASMA, AND PLASMA GENERATOR FOR EXECUTING THE METHOD AND ETCHING APPARATUS 失效
公开(公告)号：JP2002033306A
公开(公告)日：2002-01-31
申请号：JP2000212528
申请日：2000-07-13
申请人： ULVAC SEIMAKU KK , ULVAC CORP
发明人： SASAKI TAKAHIDE , HAYASHI ATSUSHI , HARASHIMA NORIYUKI , IKEDA HITOSHI
IPC分类号： H05H1/46 , B01J19/08 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method of controlling spatial distribution of plasma, by which etching rate can be uniformized, even with a wide area. SOLUTION: When discharge plasma is generated in a vacuum chamber by using at least a double loop-shaped antenna, the other space of counterposed sites from the viewpoint of the diameter of the adjacent loop-shaped antenna is changed continuously to one space of the counterposed sites, maintaining an intermediate site between the counterposed sites in parallel with the surface of an article to be treated.

8. 发明专利

JPH10289897A DRY ETCHING DEVICE AND METHOD FOR MASK SUBSTRATE 失效
公开(公告)号：JPH10289897A
公开(公告)日：1998-10-27
申请号：JP9937097
申请日：1997-04-16
申请人： FUJITSU LTD , MITSUBISHI ELECTRIC CORP , ULVAC SEIMAKU KK
发明人： HOSHINO EIICHI , YOSHIOKA NOBUYUKI , HAYASHI ATSUSHI
IPC分类号： C23F4/00 , G03F1/54 , H01L21/302 , H01L21/3065 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To make an etching rate of an entire mask substrate almost constant in a dry etching device and method for mask substrate. SOLUTION: A dry etching device used for producing a mask substrate for fabrication of semiconductor devices comprises a first electrode 1, a second electrode 3 which faces the first electrode 1 with a given space therebetween and is mounted with a mask substrate 9 thereon, and a sample stage 5 which is disposed between the mask substrate 9 and the second electrode 3 and has a thickness determined to make the surface electric potential of the mask substrate 9 almost constant during an etching operation. In this sample stage 5, the surface electric potential is measured by changing the thickness of the sample base under the etching condition and the thickness which makes the surface electric potential of the central portion and the electric potential of the peripheral portion almost agree with each other is determined.

9. 发明专利

JPH08262688A PHASE SHIFT PHOTOMASK BLANKS, PHASE SHIFT PHOTOMASK, AND THEIR MANUFACTURE 失效
公开(公告)号：JPH08262688A
公开(公告)日：1996-10-11
申请号：JP9140195
申请日：1995-03-24
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： ISAO AKIHIKO , KAWADA SUSUMU , HAYASHI ATSUSHI , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE: To provide a phase shift mask which satisfies optical characteristics and chemical resistance, has high pattern precision, and develops no pattern crack. CONSTITUTION: When phase shift films 10, 40 for shifting the phase of exposure light are formed, phase shift photomask blanks are formed with about the thickness directional center being set to a composition having a slow side etching speed S when the films are formed with a single composition, so that the difference in the side etching quantity differed in the thickness direction of the phase shift films 10, 40 is minimized, and when phase shift photomasks 35, 39 are formed by dry etching, the side surfaces of shifter parts 7, 17 are raised almost vertically from transparent bases 5, 15. The regulation of adding ratio of NO gas at sputtering suffices for the use of a molybdenum silicide oxide nitride film as the phase shift film.

10. 发明专利

JPH06347996A DRY ETCHING METHOD FOR PHOTOMASK 失效
公开(公告)号：JPH06347996A
公开(公告)日：1994-12-22
申请号：JP13219593
申请日：1993-06-02
申请人： MITSUBISHI ELECTRIC CORP , ULVAC SEIMAKU KK
发明人： YOSHIOKA NOBUYUKI , AOYAMA SATORU , WATAKABE YAICHIRO , TOKU AKIHIKO , TOKORO YASUO , HAYASHI ATSUSHI
IPC分类号： G03F1/54 , H01L21/302 , H01L21/3065 , G03F1/08
摘要： PURPOSE:To provide the etching method which makes it possible to obtain a photomask having high accuracy by using a dry etching device having rotating magnetic fields. CONSTITUTION:A photomask substrate 11 is mounted on an RF electrode 10 surface in an etching chamber 2 of the dry etching device 1 having the rotating magnetic fields by electromagnets 5 to 8 and a pattern material is etched by reactive ion etching under the conditions of 50 to 150 gauss magnetic field intensity of the electromagnets, 0.03 to 0.3Torr reactive gaseous pressure in the etching chamber and 0.20 to 0.32W/cm RF electric power density of the electrodes. The controllability of plasma is good and selection ratios are improved. The pattern material of the photomask is subjected to the etching with small CD loss, good intra-surface uniformity and high accuracy by setting magnetic field intensity, reactive gaseous pressure and RF electric power density to the values described above.

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