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1. 发明专利

JP2003073860A Multilayer-type transparent electroconductive film, and method for patterning the film 审中-公开
标题翻译：多层透明电磁膜，以及用于绘制电影的方法
公开(公告)号：JP2003073860A
公开(公告)日：2003-03-12
申请号：JP2001260927
申请日：2001-08-30
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： UKISHIMA YOSHIYUKI , ITO MASAHIRO , ICHINOHE YUJI , RI KETSUKI , KOMATSU TAKASHI , OKASAKA KENSUKE , FUJII KENJI , SASAKI TAKAHIDE
IPC分类号： H05B33/10 , C23C14/06 , C23C14/08 , C23C28/00 , C23F1/00 , C23F1/30 , H01L51/50 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a technology for patterning a multilayer-type transparent electroconductive film.
SOLUTION: The transparent electroconductive film has a multilayer structure comprising a first ITO film, a metallic thin film, and a second ITO film, and is characterized by not exposing the film to an atmosphere of 300°C or higher, through start of formation to etching of the transparent film, to make the first and the second ITO films keep an amorphous structure. The ITO film having the amorphous structure, and a crystallized ITO film are respectively shown in the Fig. 10 (a, b) and (c) in the specification. Then, the first and the second ITO films having the amorphous structure can be etched by oxalic acid.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种图案化多层型透明导电膜的技术。解决方案：透明导电膜具有包括第一ITO膜，金属薄膜和第二ITO膜的多层结构，其特征在于，通过开始形成，不使膜暴露于300℃以上的气氛以蚀刻透明膜，使第一和第二ITO膜保持非晶结构。具有非晶结构的ITO膜和结晶化的ITO膜分别如图1所示。 10（a，b）和（c）。然后，可以用草酸蚀刻具有非晶结构的第一和第二ITO膜。

2. 发明专利

JP2013137908A Apparatus and method for manufacturing organic el device 有权
标题翻译：用于制造有机EL器件的装置和方法
公开(公告)号：JP2013137908A
公开(公告)日：2013-07-11
申请号：JP2011287688
申请日：2011-12-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ITO MASAHIRO , NAKAMURA KYUZO
IPC分类号： H05B33/10 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide apparatus and method for manufacturing an organic EL device which can enhance efficiency when a donor substrate is reused.SOLUTION: An apparatus for manufacturing an organic EL device includes: a transfer layer forming chamber 25 for forming a transfer layer on a donor substrate SG; a transfer chamber 22 for transferring a part of the transfer layer from the donor substrate SG to an element substrate; a lamination chamber 21 that is connected to the transfer chamber 22 and loads the element substrate into the transfer chamber 22; a separation chamber 23 that is connected to the transfer chamber 22 and unloads the element substrate from the transfer chamber 22; and a dry cleaning chamber 27 for removing the remainder in the transfer chamber from the donor substrate SG. The lamination chamber 21, transfer chamber 22, and separation chamber 23 are connected to each other in a row in the order named. The transfer layer forming chamber 25, transfer chamber 22, and dry cleaning chamber 27 are connected to each other in an annular shape in the order named. The apparatus for manufacturing the organic EL device further includes a transport section for repetitively transporting the donor substrate SG with respect to the transfer layer forming chamber 25, transfer chamber 22, and dry cleaning chamber 27 in the order named.
摘要翻译：要解决的问题：提供一种用于制造有机EL器件的装置和方法，该有机EL器件可以在施加给体衬底被重新使用时提高效率。解决方案：一种用于制造有机EL器件的设备，包括：转印层形成室25，用于形成转印层在供体衬底SG上; 用于将转印层的一部分从施主基板SG转移到元件基板的转印室22; 层叠室21，其连接到传送室22并将元件基板装载到传送室22中; 分离室23，其连接到传送室22并从传送室22卸载元件基板; 以及用于从供体衬底SG去除转移室中的剩余部分的干洗室27。层压室21，传送室22和分离室23以一连串的顺序相互连接。转印层形成室25，转印室22和干燥室27以所述顺序彼此连接成环状。用于制造有机EL器件的设备还包括一个传送部分，用于以所述的顺序相对于转印层形成室25，转印室22和干洗室27重复地传送施主衬底SG。

3. 发明专利

JP2005268235A Ion beam irradiation device and ion bean irradiation method 审中-公开
标题翻译：离子束辐照装置和离子束辐射方法
公开(公告)号：JP2005268235A
公开(公告)日：2005-09-29
申请号：JP2005171904
申请日：2005-06-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SOTOHANE YOSHIYUKI , HAYASHI TOSHIO , ITO MASAHIRO , OGATA SEIJI , SAKURADA YUZO , UCHIDA TAIJIROU
IPC分类号： H01J27/16 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an ion beam irradiation device capable of drawing out a uniform ion beam as a uniform ion beam by forming a circular magnetic neutral line as a position of zero-magnetic field continuously existing in a vacuum chamber, as a plasma generating source, and by using a magnetic neutral line discharge ion source, made to generate a discharge plasma in the magnetic neutral line by impressing an alternating or high frequency electric field along the magnetic neutral line.
SOLUTION: The plasma generating source comprises a magnetic field generating means for forming the circular magnetic neutral line as a position of zero-magnetic field continuously existing in the vacuum chamber; and an electric field generating means capable of generating a discharge plasma in the magnetic neutral line by impressing an alternating or high frequency electric field along the magnetic neutral line.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供一种离子束照射装置，其能够通过形成作为连续存在于真空室中的零磁场的位置的圆形磁性中性线，作为均匀的离子束而引出均匀的离子束，作为等离子体发生源，并且通过使用磁性中性线放电离子源，通过沿着磁性中性线施加交变或高频电场，使其在磁性中性线中产生放电等离子体。解决方案：等离子体发生源包括用于形成圆形磁性中性线的磁场产生装置，作为连续存在于真空室中的零磁场的位置; 以及电场产生装置，其能够通过沿着磁性中性线施加交替或高频电场而在磁性中性线中产生放电等离子体。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005100728A Organic el element and manufacturing method of organic el element 有权
标题翻译：有机EL元件的有机EL元件和制造方法
公开(公告)号：JP2005100728A
公开(公告)日：2005-04-14
申请号：JP2003331021
申请日：2003-09-24
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： RI KETSUKI , ITO MASAHIRO , UKISHIMA YOSHIYUKI , ICHINOHE YUJI , KOMATSU TAKASHI
IPC分类号： H05B33/10 , H01L51/50 , H05B33/12 , H05B33/14 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide an organic EL element of simple matrix type, capable of preventing crosstalk.
SOLUTION: The EL element 10 comprises a substrate 11, and anode electrodes 13 arranged on the substrate 11 parallel to each other. On the substrate 11, an insulation projecting strip 15a is extendingly provided along the longitudinal direction of the anode electrodes 13. Since the thickness of an organic thin film 23a is lower than the height of the projecting strip 15a formed of a residue insulation layer 14, the projecting strip 15 is not embedded and a tip end part of its side surface in the longitudinal direction is exposed. Even if voltage is applied to a selected anode electrode and cathode electrode 27a, the organic thin film 23a arranged on the anode electrodes 13 is separated from the other part by the exposed portion of the projecting strip 15a, preventing the current from flowing from the organic thin film 23a located between the anode electrodes 13 and a cathode electrode 27a to other portion. Accordingly crosstalk is prevented.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够防止串扰的简单矩阵型的有机EL元件。解决方案：EL元件10包括基板11和布置在基板11上彼此平行的阳极电极13。在基板11上，沿着阳极电极13的长度方向延伸设置绝缘突条15.由于有机薄膜23a的厚度低于由残留绝缘层14形成的突出条15a的高度，突出条15不被嵌入，并且其侧表面的纵向方向的末端部分被暴露。即使电压被施加到所选择的阳极电极和阴极电极27a上，布置在阳极电极13上的有机薄膜23a也通过突出条15a的暴露部分与另一部分分离，从而防止电流从有机位于阳极13和阴极电极27a之间的薄膜23a与其他部分。因此防止了串扰。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2003059646A Organic film display device 审中-公开
标题翻译：有机电影显示设备
公开(公告)号：JP2003059646A
公开(公告)日：2003-02-28
申请号：JP2001243372
申请日：2001-08-10
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ICHINOHE YUJI , RI KETSUKI , UKISHIMA YOSHIYUKI , ITO MASAHIRO , KOMATSU TAKASHI
IPC分类号： H05B33/04 , G09F9/30 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/10 , H05B33/22 , H05B33/14
CPC分类号： H01L27/3281 , H01L27/3295 , H01L51/5253 , H01L2251/5338
摘要： PROBLEM TO BE SOLVED: To provide an organic film display device that has a long life and flexibility.
SOLUTION: An anode electrode membrane 12 formed on the substrate 11, a luminous organic film 15a on its surface, and a cathode electrode membrane 16a on the surface of the above are sealed with a resin sealing membrane 21 and a metallic sealing membrane 22. The resin sealing membrane 21 is made thick nearly enough to bury a reactive electrode membrane 16b on the cathode barrier 14. Since the luminous organic film 15a is shut off from the outside air by the substrate 11, the insulating body 19, and the metallic sealing membrane 22, it has a long life. And since a hard metallic sealing can is not used necessarily, an organic film display device 2 having flexibility is obtained.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有长寿命和柔韧性的有机薄膜显示装置。解决方案：用树脂密封膜21和金属密封膜22密封形成在基板11上的阳极电极膜12，表面上的发光有机膜15a和表面上的阴极电极膜16a。树脂密封膜21的厚度几乎足以将反应性电极膜16b埋在阴极阻挡层14上。由于发光有机膜15a被基板11与外部空气隔绝，绝缘体19和金属密封膜 22，使用寿命长。并且，由于不需要使用硬的金属密封罐，因此获得了具有柔性的有机薄膜显示装置2。

6. 发明专利

JP2007148063A Panel manufacturing equipment and panel manufacturing method 审中-公开
标题翻译：面板制造设备和面板制造方法
公开(公告)号：JP2007148063A
公开(公告)日：2007-06-14
申请号：JP2005343349
申请日：2005-11-29
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： NISHIO FUMINOBU , NEGISHI TOSHIO , KOSHIDA TATSUHIKO , HIRAIWA HIDEYUKI , HANE KOJI , ITO MASAHIRO
IPC分类号： G02F1/1339 , G09F9/00 , H01L51/50 , H05B33/02 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a panel manufacturing equipment capable of forming a desired interval without using a spacer.
SOLUTION: A substrate W2 sucked by an upper substrate holding unit 33 is made to abut against the top surface of a gap forming block 61, to restrict downward movement of the upper substrate holding unit 44. In this state, a substrate W1 stored inside the gap forming block 61 and sucked to a lower substrate-holding unit 53 and a substrate W2 made to abut against the gap-forming block 61 are held at a specified interval. Namely, a prescribed substrate gap is formed between both the substrates W1 and W2.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够在不使用间隔物的情况下形成所需间隔的面板制造设备。解决方案：使由上基板保持单元33吸附的基板W2抵靠间隙形成块61的顶表面，以限制上基板保持单元44的向下移动。在该状态下，基板W1 存储在间隙形成块61内部并被吸入下基板保持单元53和与间隙形成块61抵接的基板W2以规定的间隔保持。即，在两个基板W1和W2之间形成规定的基板间隙。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006257498A Sputtering source and sputtering system 有权
标题翻译：溅射源和溅射系统
公开(公告)号：JP2006257498A
公开(公告)日：2006-09-28
申请号：JP2005076677
申请日：2005-03-17
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： NEGISHI TOSHIO , ITO MASAHIRO
IPC分类号： C23C14/34 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To form a sputtered film on the surface of an organic thin film without causing any damage. SOLUTION: A particle passage 130a is arranged at the opening of a cylindrical side wall 103 on which a target 113a is arranged, first and second trap magnets 121a, 122a are arranged on both the sides thereof, so as to form the magnetic line of force at the particle passage 130a. Among sputtering particles to pass through the particle passage 130, only neutral particles can go straight on, thus a sputtered film is formed on the surface of the organic thin film in an object for film formation. Since the flying direction of charged particles and electrons is bent by the magnetic line of force, and can not reach the surface of the organic thin film, damage to the organic thin film is reduced. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在有机薄膜的表面上形成溅射膜，而不会造成任何损坏。解决方案：颗粒通道130a布置在其上布置有靶113a的圆柱形侧壁103的开口处，第一和第二捕集磁体121a，122a布置在其两侧，以形成磁粒子通道130a处的力线。在通过粒子通路130的溅射粒子中，只有中性粒子能够直线地进行，因此在成膜对象物中的有机薄膜的表面上形成溅射膜。由于带电粒子和电子的飞行方向被磁力线弯曲，并且不能到达有机薄膜的表面，所以有机薄膜的损伤降低。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006148179A Reactive ion etching apparatus 有权
标题翻译：反应离子蚀刻装置
公开(公告)号：JP2006148179A
公开(公告)日：2006-06-08
申请号：JP2006060657
申请日：2006-03-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： CHIN TAKASHI , ITO MASAHIRO , HAYASHI TOSHIO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a reactive ion etching apparatus that is adaptable to a fine work smaller 0.3 μm width, without substantially changing the structures of a cathode-coupled etching apparatus and a three-electrode etching apparatus, which are used conventionally.
SOLUTION: In a reactive dry etching apparatus according to the present invention, a magnetic field generating means for forming circular magnetic neutral lines at the magnetic field zero position, which exist in succession in a vacuum chamber, is provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供适用于0.3μm宽的微细工作的反应离子蚀刻装置，而基本上不改变阴极耦合蚀刻装置和三电极蚀刻装置的结构，所用阴极蚀刻装置和三电极蚀刻装置传统。解决方案：在根据本发明的反应性干法蚀刻装置中，提供了一种用于在真空室中连续存在的在磁场零位置形成圆形磁性中性线的磁场产生装置。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2003077678A Organic el element and manufacturing method therefor 有权
标题翻译：有机EL元件及其制造方法
公开(公告)号：JP2003077678A
公开(公告)日：2003-03-14
申请号：JP2001263989
申请日：2001-08-31
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： UKISHIMA YOSHIYUKI , ITO MASAHIRO , RI KETSUKI , ICHINOHE YUJI , KOMATSU TAKASHI
IPC分类号： H05B33/22 , H01L27/32 , H01L51/50 , H05B33/10 , H05B33/12 , H05B33/14
CPC分类号： H01L27/3295
摘要： PROBLEM TO BE SOLVED: To provide manufacturing technique for an organic EL element capable of forming a barrier having high film quality by small number of processes. SOLUTION: This organic EL element according to this invention has a barrier 16 for separating a predetermined cathode, and this barrier 16 is made of polyimide film containing fluorine formed by vapor deposition polymerization. The polyimide film contains fluorine of 20 to 40 wt.%. As the raw material monomer for vapor deposition polymerization, monomer having substituent containing fluorine is used.
摘要翻译：要解决的问题：提供能够通过少量工艺形成具有高膜质量的屏障的有机EL元件的制造技术。解决方案：根据本发明的这种有机EL元件具有用于分离预定阴极的阻挡层16，该阻挡层16由含有通过气相沉积聚合形成的氟的聚酰亚胺膜制成。聚酰亚胺膜含有20〜40重量％的氟。作为气相沉积聚合的原料单体，使用具有含氟取代基的单体。

10. 发明专利

JP2011165581A Vapor deposition mask, vapor deposition device, and thin film forming method 有权
标题翻译：蒸气沉积掩模，蒸气沉积装置和薄膜成型方法
公开(公告)号：JP2011165581A
公开(公告)日：2011-08-25
申请号：JP2010029353
申请日：2010-02-12
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： FUKAO MARI , HANE KOJI , ITO MASAHIRO
IPC分类号： H05B33/10 , C23C14/04 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition mask, a vapor deposition device and a vapor deposition method, capable of being applied to a large-sized substrate.
SOLUTION: Openings 11 are formed on the vapor deposition mask 10 so that distances between their centers may become two times the distance between pixels 51a
1 , 51a
2 of a substrate 50. The deposition mask 10 is arranged on a substrate 50, and in the state that they are positioned so that the openings 11 and shielded parts 19 are arranged alternately on each of the pixels 51a
1 , 51a
2 , 51a
x , the pixel 51a
1 is deposited opposing the opening 11, and then the deposition mask 10 is shifted by the distance between the centers of the pixels 51a
1 , 51a
2 , and the opening 11 is positioned above undeposited pixels 51a
2 , 51a
x opposing the shielded part 19 before the shift and in this state a thin film is deposited on the undeposited pixels 51a
2 , 51a
x . Since the distance between the openings 11 is wider than a conventional one, a fear of damaging the deposition mask 10 at the time of forming openings 11 can be reduced to facilitate a production of a large-sized deposition mask 10.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够应用于大尺寸基板的气相沉积掩模，气相沉积装置和气相沉积方法。解决方案：在气相沉积掩模10上形成开口11，使得它们的中心之间的距离可以变为两个像素之间的距离的两倍，像素51a 1 ，51a 2 衬底50.沉积掩模10布置在衬底50上，并且在它们被定位成使得开口11和屏蔽部分19交替布置在每个像素51a，51a上的状态相对于开口11沉积像素51a 1 ，然后，沉积掩模10被移动距离为像素51a ，51a 2 的中心，并且开口11位于未沉积的像素51a，51a，SB， SB>在移动之前与屏蔽部分19相对，并且在该状态下，薄膜沉积在未沉积的像素51a，51a，SB上。由于开口11之间的距离比常规的宽，因此可以减少在形成开口11时损害沉积掩模10的担心，从而有助于生产大型沉积掩模10.权利要求：（C）2011，JPO＆INPIT

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