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1. 发明专利

JP2006324209A METHOD OF MANUFACTURING COLD-CATHODE ELEMENT 审中-公开
公开(公告)号：JP2006324209A
公开(公告)日：2006-11-30
申请号：JP2005148476
申请日：2005-05-20
申请人： JAPAN BROADCASTING CORP , ULVAC CORP , ULVAC SEIMAKU KK
发明人： HAGIWARA HIROSHI , TAKEI TATSUYA , ATOZAWA MIZUYOSHI , HIRAKAWA MASAAKI , NAKANO MINAO , MURAKAMI HIROHIKO , OKASAKA KENSUKE , SASAKI TAKAHIDE
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a cold-cathode element capable of restraining unevenness of electron emitting characteristics. SOLUTION: The method of manufacturing the cold-cathode element comprises a process of imparting a surface of a fluorinated photoresist layer 16 with a hydrophylic property by dissolving or removing the surface thereof by a prescribed size, and a process of weakening a water repellent property generated on the surface of the photoresist layer 16 by immersing the photoresist layer in etching solution in which a surfactant is added. The etching solution is made easy to penetrate into holes formed on an insulation layer 13 when applying wet etching. COPYRIGHT: (C)2007,JPO&INPIT

2. 发明专利

JP2003073860A Multilayer-type transparent electroconductive film, and method for patterning the film 审中-公开
标题翻译：多层透明电磁膜，以及用于绘制电影的方法
公开(公告)号：JP2003073860A
公开(公告)日：2003-03-12
申请号：JP2001260927
申请日：2001-08-30
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： UKISHIMA YOSHIYUKI , ITO MASAHIRO , ICHINOHE YUJI , RI KETSUKI , KOMATSU TAKASHI , OKASAKA KENSUKE , FUJII KENJI , SASAKI TAKAHIDE
IPC分类号： H05B33/10 , C23C14/06 , C23C14/08 , C23C28/00 , C23F1/00 , C23F1/30 , H01L51/50 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a technology for patterning a multilayer-type transparent electroconductive film.
SOLUTION: The transparent electroconductive film has a multilayer structure comprising a first ITO film, a metallic thin film, and a second ITO film, and is characterized by not exposing the film to an atmosphere of 300°C or higher, through start of formation to etching of the transparent film, to make the first and the second ITO films keep an amorphous structure. The ITO film having the amorphous structure, and a crystallized ITO film are respectively shown in the Fig. 10 (a, b) and (c) in the specification. Then, the first and the second ITO films having the amorphous structure can be etched by oxalic acid.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种图案化多层型透明导电膜的技术。解决方案：透明导电膜具有包括第一ITO膜，金属薄膜和第二ITO膜的多层结构，其特征在于，通过开始形成，不使膜暴露于300℃以上的气氛以蚀刻透明膜，使第一和第二ITO膜保持非晶结构。具有非晶结构的ITO膜和结晶化的ITO膜分别如图1所示。 10（a，b）和（c）。然后，可以用草酸蚀刻具有非晶结构的第一和第二ITO膜。

3. 发明专利

JP2004002111A Method of forming optical thin film for display window material and optical thin film structure 审中-公开
公开(公告)号：JP2004002111A
公开(公告)日：2004-01-08
申请号：JP2002160352
申请日：2002-05-31
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： NAKAYAMA TAKAHIRO , MIURA OSAMU , MURAKAMI HIROHIKO , MATSUZAKI KANENORI , KURAUCHI TOSHIHARU , MISAWA SHUNJI , TAMAGAWA KOICHI , OKASAKA KENSUKE , FUJII KENJI , SASAKI TAKAHIDE
IPC分类号： G02B1/11 , C03C17/34 , G02B1/10 , G02B1/111 , G09F9/30 , H01L51/50 , H05B33/02 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a method of forming an optical thin film for a display window material by which the sticking strength of a porous silica material to a transparent conductive film is improved in forming the optical thin film by lamination while having a low refractive index film consisting of the porous silica material and the transparent conductive film in order to highly efficiently take out luminescence and an optical thin film structure formed using the method. SOLUTION: The optical thin film structure is formed by laminating the transparent conductive film 2 and the low refractive index film 3 consisting of the hydrophobic porous silica material through an intermediate adhesive layer 4 composed of a transparent insulation layer such as a SiO 2 film on a glass substrate 1. In such a case, it is desirable that the low refractive index film 3 consisting of the hydrophobic porous silica material has 0.3-2.0 μm film thickness and ≤50 nm flatness expressed by the center line average roughness and the intermediate adhesive layer 4 composed of the transparent insulation film has 5-300 nm film thickness and ≤50 nm flatness expressed by the center line average roughness. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2010092885A Cathode substrate, and method of manufacturing the same 审中-公开
标题翻译：阴极基板及其制造方法
公开(公告)号：JP2010092885A
公开(公告)日：2010-04-22
申请号：JP2010003992
申请日：2010-01-12
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： NAKANO MINAO , HIRAKAWA MASAAKI , MIURA OSAMU , MURAKAMI HIROHIKO , OKASAKA KENSUKE , KOJIMA TOMOAKI
IPC分类号： H01J1/304 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To solve the following problems: electrons emitted from an emitter are diffused; the charge injection efficiency is low; and the charge injection efficiency is easily fluctuated among respective cathode substrates on the conventional anode substrate having a gate electrode. SOLUTION: The cathode substrate includes: a cathode electrode layer 12, an insulating layer 14, and a gate electrode layer 15 sequentially laminated on a processing substrate 11; an emitter E provided on a bottom of a hole 14a formed on the insulating layer; and a gate hole opening part 16 formed on the gate electrode layer. The gate hole opening is composed of a plurality of openings 16a having area smaller than that of opening of the hole of the insulating layer. Each opening is congregated just on the hole of the insulating layer so as to face the emitter. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决以下问题：从发射体发射的电子扩散; 电荷注入效率低; 并且电荷注入效率在具有栅电极的常规阳极基板上的各个阴极基板之间容易波动。解决方案：阴极基板包括：顺序层压在处理基板11上的阴极电极层12，绝缘层14和栅电极层15; 设置在形成在绝缘层上的孔14a的底部的发射体E; 以及形成在栅电极层上的栅极孔开口部16。门孔开口由具有小于绝缘层的孔的开口面积的多个开口16a构成。每个开口恰好在绝缘层的孔上聚集，以面对发射极。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2005251430A Cathode substrate and manufacturing method of the same 有权
标题翻译：阴极基板及其制造方法
公开(公告)号：JP2005251430A
公开(公告)日：2005-09-15
申请号：JP2004056624
申请日：2004-03-01
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： NAKANO MINAO , HIRAKAWA MASAAKI , MIURA OSAMU , MURAKAMI HIROHIKO , OKASAKA KENSUKE , KOJIMA TOMOAKI
IPC分类号： H01J9/02 , H01J1/304 , H01J3/02 , H01J29/48 , H01J31/12 , H01L29/76
CPC分类号： H01J29/481 , H01J3/021 , H01J9/025 , H01J31/127
摘要： PROBLEM TO BE SOLVED: To provide a cathode substrate having good electric charge injection efficiency by preventing diffusion of electron emitted from an emitter, of which, the electron injection efficiency is hardly scattered between respective cathode substrates, and to provide a manufacturing method of the same. SOLUTION: A cathode electrode layer 12, an insulation layer 14, and a gate electrode layer 15 are formed on a processing substrate 11 successively, and an emitter E is arranged on a bottom part of holes 14a formed on the insulation layer. In this case, a gate opening part is constructed by a plurality of openings 16 of which, opening area is smaller than that of the hole of the insulation layer, and respective openings are made to congregate just on the hole of the insulation layer so as to face the emitter. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过防止从发射极发射的电子的扩散来提供具有良好的电荷注入效率的阴极基板，其中电子注入效率几乎不分散在各个阴极基板之间，并且提供制造方法一样的。解决方案：连续地在处理基板11上形成阴极电极层12，绝缘层14和栅电极层15，并且在形成在绝缘层上的孔14a的底部上布置发射体E. 在这种情况下，门开口部由多个开口部16构成，开口部16的开口面积小于绝缘层的孔的开口面积，并且使各开口刚好聚集在绝缘层的孔上，以便面对发射器。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005029869A Etching solution for thin film of metallic silver or silver alloy, and etching method using the solution 审中-公开
标题翻译：金属银或银合金薄膜蚀刻方法及使用溶液的蚀刻方法
公开(公告)号：JP2005029869A
公开(公告)日：2005-02-03
申请号：JP2003273056
申请日：2003-07-10
申请人： Ulvac Seimaku Kk , アルバック成膜株式会社
发明人： YAMADA FUMIHIKO , OKASAKA KENSUKE
IPC分类号： G02F1/1343 , C23F1/30 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide an etching solution for etching a thin film of metallic silver or a silver alloy with an adequate precision of a dimension, and to provide an etching method using the solution.
SOLUTION: The etching solution used for etching the thin film made of metallic silver or the silver alloy comprises: a mixed solution having a composition of 23-47 wt.% phosphoric acid, 3-7 wt.% nitric acid and 74-46 wt.% water; and 0.05 to 0.2 wt.% silver nitrate which is an additive. The etching method using the etching solution includes just immersing the thin film of metallic silver or the silver alloy into the etching solution in a resting state in an etching step, and does not need such a streaming of a solution or a swinging of a substrate as to have been carried out in a conventional method. Then, the etching solution provides the adequate reproducibility of an etching rate, and makes the thin film of metallic silver or the silver alloy etched with the adequate precision of the dimension. As a result, a side etching is inhibited and a satisfactory pattern is formed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供用于以足够的尺寸精度蚀刻金属银或银合金薄膜的蚀刻溶液，并提供使用该溶液的蚀刻方法。解决方案：用于蚀刻由金属银或银合金制成的薄膜的蚀刻溶液包括：具有23-47重量％磷酸，3-7重量％硝酸和74重量％组成的混合溶液 -46重量％的水; 和0.05至0.2重量％的作为添加剂的硝酸银。使用蚀刻溶液的蚀刻方法包括在蚀刻步骤中将静电状态的金属银或银合金薄膜浸入蚀刻溶液中，并且不需要溶液的流动或基板的摆动作为以常规方法进行。然后，蚀刻溶液提供了足够的蚀刻速度的再现性，并且使得金属银或银合金的薄膜以适当的尺寸精度蚀刻。结果，抑制了侧面蚀刻并形成令人满意的图案。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004107118A Method for manufacturing graphite nano-fiber, electron emitting source and display element 审中-公开
公开(公告)号：JP2004107118A
公开(公告)日：2004-04-08
申请号：JP2002270104
申请日：2002-09-17
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： HIRAKAWA MASAAKI , MIURA OSAMU , MURAKAMI HIROHIKO , ONO KAZUNAO , FUJII KENJI , OKASAKA KENSUKE , SASAKI TAKAHIDE
IPC分类号： C01B31/02 , B82B3/00 , C23C16/26 , C30B25/02 , C30B29/60 , D01F9/127 , H01J1/304 , H01J9/02 , H01J31/12
CPC分类号： D01F9/127 , B82Y10/00 , B82Y30/00 , C30B25/02 , C30B29/605 , H01J1/3044 , H01J9/025 , H01J2201/30469
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing graphite nano-fibers which cause no short circuit even when utilized for an emitter and can improve unevenness of light emitting sites in manufacturing an FED (field emission display) and to provide an electron emitting source and a display element using the obtained graphite nano-fibers. SOLUTION: A gaseous mixture of a carbon supply gas and gaseous hydrogen is fed onto the surface of a substrate on which a catalyst layer of a prescribed thickness has been formed to form graphite nano-fibers consisting of a graphite nano-fiber layer of a controlled thickness and a non-fiber layer. Iron, cobalt or an alloy containing at least one of these metals is used as the catalyst, and growth is carried out at 350 to 650°C for 1 to 60 min. The electron emitting source and the display device are obtained using the obtained graphite nano-fibers. COPYRIGHT: (C)2004,JPO

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