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1. 发明专利

JP2003073860A Multilayer-type transparent electroconductive film, and method for patterning the film 审中-公开
标题翻译：多层透明电磁膜，以及用于绘制电影的方法
公开(公告)号：JP2003073860A
公开(公告)日：2003-03-12
申请号：JP2001260927
申请日：2001-08-30
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： UKISHIMA YOSHIYUKI , ITO MASAHIRO , ICHINOHE YUJI , RI KETSUKI , KOMATSU TAKASHI , OKASAKA KENSUKE , FUJII KENJI , SASAKI TAKAHIDE
IPC分类号： H05B33/10 , C23C14/06 , C23C14/08 , C23C28/00 , C23F1/00 , C23F1/30 , H01L51/50 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a technology for patterning a multilayer-type transparent electroconductive film.
SOLUTION: The transparent electroconductive film has a multilayer structure comprising a first ITO film, a metallic thin film, and a second ITO film, and is characterized by not exposing the film to an atmosphere of 300°C or higher, through start of formation to etching of the transparent film, to make the first and the second ITO films keep an amorphous structure. The ITO film having the amorphous structure, and a crystallized ITO film are respectively shown in the Fig. 10 (a, b) and (c) in the specification. Then, the first and the second ITO films having the amorphous structure can be etched by oxalic acid.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种图案化多层型透明导电膜的技术。解决方案：透明导电膜具有包括第一ITO膜，金属薄膜和第二ITO膜的多层结构，其特征在于，通过开始形成，不使膜暴露于300℃以上的气氛以蚀刻透明膜，使第一和第二ITO膜保持非晶结构。具有非晶结构的ITO膜和结晶化的ITO膜分别如图1所示。 10（a，b）和（c）。然后，可以用草酸蚀刻具有非晶结构的第一和第二ITO膜。

2. 发明专利

JP2014075418A Silicon substrate for solar cell and manufacturing method therefor, and solar cell 审中-公开
标题翻译：太阳能电池用硅基板及其制造方法及太阳能电池
公开(公告)号：JP2014075418A
公开(公告)日：2014-04-24
申请号：JP2012221249
申请日：2012-10-03
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： DAIKO YOSHINORI , OTA ATSUSHI , KOMATSU TAKASHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a silicon substrate for a solar cell in which combination of carriers and current leakage can be suppressed on the interface of a silicon substrate precursor, and to provide a manufacturing method therefor.SOLUTION: The silicon substrate for a solar cell has a planar silicon substrate precursor 101, and an aluminum oxide film 102 covering the side face 101c and two principal surfaces 101a, 101b of the silicon substrate precursor 101. The silicon substrate precursor 101 is composed of p-type silicon, and at least one of two principal surfaces 101a, 101b of the silicon substrate precursor 101 is shaped to have a texture.
摘要翻译：要解决的问题：提供一种用于太阳能电池的硅衬底，其中可以抑制硅衬底前体的界面上的载流子和电流泄漏的组合，并提供其制造方法。解决方案：用于太阳能的硅衬底单元具有平面硅衬底前体101和覆盖硅衬底前体101的侧面101c和两个主表面101a，101b的氧化铝膜102.硅衬底前体101由p型硅构成，并且至少硅衬底前体101的两个主表面101a，101b中的一个被成形为具有纹理。

3. 发明专利

JP2012124328A Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：JP2012124328A
公开(公告)日：2012-06-28
申请号：JP2010273826
申请日：2010-12-08
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , SAITO KAZUYA , KATAGIRI HIROAKI , KOMATSU TAKASHI , SAKIO SUSUMU , TAKAGI MAKIKO , KANAZAWA KEISUKE , OSAWA MASATO , TEI KYUKO , HASHIMOTO NATSUKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell which sufficiently secures power collection property of finger electrodes, increases solar light reaching a semiconductor element, and achieves high generation efficiency.SOLUTION: Each finger electrode 22 has at least two regions made of materials which are different from each other, a first region 22a formed by a transparent conductor and a second region 22b formed by a conductive metal. The first region 22a may be formed by the transparent conductor, for example, ITO (indium oxide-tin), ZnO (zinc oxide), and TO (tin oxide). According to this embodiment, for example, ITO is used. On the other hand, the second region may be formed by the conductive metal, for example, Ag (silver), Al (aluminum), Au (gold), and Cu (copper).
摘要翻译：要解决的问题：为了提供充分确保手指电极的集电性的太阳能电池，增加到达半导体元件的太阳光，并且实现高发电效率。解决方案：每个指状电极22具有由彼此不同的材料制成的至少两个区域，由透明导体形成的第一区域22a和由导电金属形成的第二区域22b。第一区域22a可以由透明导体形成，例如ITO（氧化铟锡），ZnO（氧化锌）和TO（氧化锡））。根据本实施方式，例如使用ITO。另一方面，第二区域可以由导电金属形成，例如Ag（银），Al（铝），Au（金）和Cu（铜）。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012099584A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2012099584A
公开(公告)日：2012-05-24
申请号：JP2010244796
申请日：2010-10-29
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： IKEDA SUSUMU , KIYOTA TETSUJI , KIKUCHI MAKOTO , KOMATSU TAKASHI , SATO YOSHINAO , KUBO MASASHI , TOKI MINORU
IPC分类号： H01L21/677 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device capable of reducing a tact time.SOLUTION: Two stages of upper and lower first support members movably supporting a substrate S in a first direction are provided in a first chamber at a predetermined interval, and two stages of upper and lower second support members movably supporting the substrate S in a second direction orthogonal to the first direction are provided in a second chamber at a predetermined interval and at height different from that of the first support members. Two stages of first transportation means 30 for transporting the substrate S in the first direction and second transportation means 31 for transporting the substrate S in the second direction are provided in a transportation chamber at a predetermined interval. The first transportation means 30 and the second transportation means 31 are provided so that they can move relatively upward and downward. By relatively moving them upward and downward, the substrate S can move between the first transportation means 30 and the second transportation means 31 in the same upper stage or the same lower stage.
摘要翻译：要解决的问题：提供能够减少节拍时间的基板处理装置。解决方案：以第一方向可移动地支撑基板S的第一和第二支撑构件的两个阶段以预定间隔设置在第一室中，并且将上部和下部第二支撑构件的两个阶段可移动地支撑基板S 与第一方向正交的第二方向以与第一支撑构件不同的预定间隔和高度设置在第二室中。在传送室中以预定间隔设置有用于沿第一方向传送基板S的第一传送装置30和用于沿第二方向传送基板S的第二传送装置31的两个阶段。第一输送装置30和第二输送装置31设置成相对上下移动。通过相对地向上和向下移动它们，衬底S可以在同一上部或相同下部的第一运送装置30和第二运送装置31之间移动。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2010199593A Method of forming insulating film, and film forming device thereof 审中-公开
标题翻译：形成绝缘膜的方法及其薄膜形成装置
公开(公告)号：JP2010199593A
公开(公告)日：2010-09-09
申请号：JP2010066469
申请日：2010-03-23
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KOMATSU TAKASHI , NAGANO KENZO , TAGUMA YASUHIRO , HIGUCHI YASUSHI , SAHODA TAKESHI , IKEDA SATOSHI , OTA YOSHIFUMI , SEKI NOBUAKI , NAKAMURA KYUZO
IPC分类号： H01L21/316 , G11B5/31 , G11B5/39 , H01L21/283 , H01L21/31 , H01L21/318 , H01L29/78 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide an insulating film which is suitable for mass-production, less contaminated, composition-controlled, dense, extremely small in defect and grain boundary, and structure-controlled along the depth, and has excellent insulation characteristics.
SOLUTION: A method of forming the insulating film includes: a first step of supplying gaseous molecules containing at least one kind selected out of O, N and F to a substrate surface for adsorption and then discharging them; a subsequent second step of supplying gaseous molecules containing Al, Si, Ta or Ti to the substrate surface for adsorption and then discharging them; and a third step of introducing Ar thereafter and then discharging it, the first to third steps as one cyle being carried out a plurality of times.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于批量生产，污染较少，成分控制，致密，缺陷和晶界极小，沿深度进行结构控制的绝缘膜，并具有优异的绝缘性特点。形成绝缘膜的方法包括：第一步骤，将含有选自O，N和F中的至少一种的气态分子供应到基板表面用于吸附然后将其排出; 随后的第二步骤，将含有Al，Si，Ta或Ti的气体分子供应到衬底表面用于吸附然后将其排出; 以及在此之后引入Ar然后排出Ar的第三步骤，作为一个层进行多次执行的第一至第三步骤。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009052124A Rf sputtering apparatus 审中-公开
标题翻译：射频射灯
公开(公告)号：JP2009052124A
公开(公告)日：2009-03-12
申请号：JP2007222685
申请日：2007-08-29
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： NAKAMUTA TAKESHI , MATSUMOTO MASAHIRO , KOMATSU TAKASHI , SAITO KAZUYA , MOCHIDA RIICHI , MAJIMA SHINNOSUKE , OGI TAKAHIKO , NAGASAWA SHOJI
IPC分类号： C23C14/34 , C23C14/00 , C23C14/50 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus where a deposition-preventive plate is not sputtered.
SOLUTION: A power device 40 of a film deposition apparatus 1 in which the area of the inner circumferential side of a deposition-preventive plate 35 surrounding a sputtering space between a target 32 and an electrostatic attracting device 31 is smaller than the surface area of the target 32 is provided with a d.c. voltage source 41, and sputtering voltage in which high frequency a.c. voltage is superimposed on bias voltage being negative d.c. voltage is applied to the target 32. Since the potential of the target 32 is made negative, the deposition-preventive plate 35 in the ground potential is not sputtered, and pollutants in a thin film are reduced.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种不溅镀防沉积板的成膜装置。解决方案：成膜装置1的动力装置40，其中围绕靶32和静电吸引装置31之间的溅射空间的防沉积板35的内周侧的面积小于表面目标32的区域设置有dc 电压源41和溅射电压，其中高频率a.c. 电压叠加在偏压为负直流电压上。电压被施加到靶32上。由于靶32的电位为负，因此不会溅射处于地电位的防沉积板35，薄膜中的污染物减少。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009035824A Copper film production method, and sputtering device used for the method 有权
标题翻译：铜膜生产方法和用于该方法的溅射装置
公开(公告)号：JP2009035824A
公开(公告)日：2009-02-19
申请号：JP2008281839
申请日：2008-10-31
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KOMATSU TAKASHI , NAKAMURA SATOSHI , TAGUMA YASUHIRO , UEHIGASHI TOSHIMITSU , HIGUCHI YASUSHI
IPC分类号： C23C14/34 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a copper thin film having low specific resistance regarding a technical field where a target made of copper or essentially consisting of copper is sputtered, so as to form a copper thin film.
SOLUTION: When a substrate 15 is arranged at the inside of a sputtering system 1, and a copper target 21 is sputtered, a trace amount of air from piping 31 for gas addition is introduced and is added to a sputtering gas. When a copper thin film formed on the surface of the substrate 15 is left in the air, its specific resistance reduces, and is made close to the value of bulk copper. It is effective that the partial pressure of the air to be introduced is controlled to ≤1.33×10
-4 Pa. For reducing the partial pressure value, preferably, the air is intermittently introduced.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种在由铜制成的目标或基本上由铜构成的靶被溅射的技术领域中具有低电阻率的铜薄膜，以便形成铜薄膜。解决方案：当衬底15布置在溅射系统1的内部并且铜靶21被溅射时，引入用于气体添加的来自管道31的痕量的空气并将其添加到溅射气体中。当形成在基板15的表面上的铜薄膜留在空气中时，其电阻降低，并且接近体铜的值。要引入的空气的分压被控制在≤1.33×10 -4 Pa是有效的。为了降低分压值，优选间歇地引入空气。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008057048A Method for forming barrier film 有权
标题翻译：形成障碍膜的方法
公开(公告)号：JP2008057048A
公开(公告)日：2008-03-13
申请号：JP2007286311
申请日：2007-11-02
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： NAKAMURA KYUZO , KOMATSU TAKASHI , HIGUCHI YASUSHI , NAGANO KENZO , OTA YOSHIFUMI , TAGUMA YASUHIRO , IKEDA SATOSHI
IPC分类号： C23C16/34 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a barrier film having excellent barrier properties regarding a technical field of forming a barrier film, particularly, regarding a technique of forming a barrier film using a CVD (Chemical Vapor Deposition) process.
SOLUTION: A substrate is carried into a vacuum tank (S
1 ), temperature is increased (S
2 ), in nitrogen-containing gas and high melting point metal-containing gas, either gas is introduced therein (S
3 ), the gas is evacuated (S
4 ), thereafter, the other gas is introduced therein (S
5 ), and the other gas is evacuated (S
6 ). By repeatedly performing the process for a plurality of times (S
9 ), CVD reaction occurs between the former gas adsorbed on the surface of the substrate and the other gas introduced later, thus a barrier film grows inside a contact hole in a conformal way, and the barrier film having a satisfactory step coverage can be obtained. At the time when purge gas is introduced (S
7 ), and evacuation is performed (S
8 ) every time the CVD reaction is performed, by-product gas and unreacted gas adsorbed on the substrate and the vacuum tank are exchanged with the purge gas, thus the barrier film having higher purity can be obtained.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在形成阻挡膜的技术领域具有优异的阻隔性的阻挡膜，特别是关于使用CVD（化学气相沉积）工艺形成阻挡膜的技术。
解决方案：在含氮气体和高熔点金属中，将基底携带到真空罐（S 1 ）中，温度升高（S 2 ）（S 3 ）中，将气体抽真空（S 4 ），然后将其他气体导入（S 5），将其他气体抽真空（S 6S）。通过反复进行多次处理（S 9 ），在基板表面吸附的前一种气体和稍后引入的其他气体之间发生CVD反应，因此阻挡膜在可以获得以保形方式的接触孔，并且可以获得令人满意的台阶覆盖的阻挡膜。在每次进行CVD反应时，当引入吹扫气体（S 7 ）并进行排气（S 8 ）时，副产物气体和未反应气体吸附在基板上，并且真空槽与吹扫气体交换，从而可以获得具有较高纯度的阻挡膜。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007031817A Sputtering apparatus and sputtering method 有权
标题翻译：溅射装置和喷射方法
公开(公告)号：JP2007031817A
公开(公告)日：2007-02-08
申请号：JP2005220889
申请日：2005-07-29
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KOBAYASHI HIROSHI , TANI NORIAKI , KOMATSU TAKASHI , KIYOTA JUNYA , NAKAMURA HAJIME , ARAI MAKOTO
IPC分类号： C23C14/34 , C23C14/35
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of preventing any non-erosive area from remaining on a target, and depositing a film of a uniform quality when performing the responsive sputtering.
SOLUTION: The sputtering apparatus 2 has at least four targets 241 arranged side by side at predetermined intervals in a vacuum chamber 21, and AC power sources E connected to two targets one by one out of the targets arranged side by side so as to alternately apply the negative potential and the positive potential or the grounding potential thereto, and each AC power source E is connected to the two targets 241 not adjacent to each other.
COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2005113272A Method for manufacturing thin film 审中-公开
标题翻译：制造薄膜的方法
公开(公告)号：JP2005113272A
公开(公告)日：2005-04-28
申请号：JP2005007369
申请日：2005-01-14
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： HIGUCHI YASUSHI , NAKAMURA KYUZO , KOMATSU TAKASHI , MIZUSAWA YASUSHI , WADA HISASHI , KONDO TOMOYASU , TAKASUGI FUMITO , OBINATA HISAHARU , IKEDA SATOSHI
IPC分类号： C23C14/34 , C23C14/06
摘要： PROBLEM TO BE SOLVED: To provide a technology for continuously and stably forming a Ti film and a TiN film while using the same Ti metal target.
SOLUTION: This manufacturing method comprises sputtering a Ti metal target with a pretreatment gas containing an inert gas and nitrogen gas in order to previously nitride the surface of a substrate, and then sputtering the Ti metal target with a reactant gas containing the inert gas and nitrogen gas to form the TiN film on the substrate. The manufacturing method can stably form the TiN film and can apply a large amount of electrical power for sputtering. In the above nitriding step, it is preferable to pretreat the Ti metal target by previously sputtering the Ti metal target with the reactant gas; determining a sputtering electric power (the position of point P
2 ) or a ratio of nitrogen gas (the position of point P
12 ) when the surface of the Ti metal target was changed from metallic Ti to TiN; and applying the electric power for sputtering equal to or less than the determined sputtering electric power, or introduce the pretreatment gas with the ratio of nitrogen gas equal to or higher than the determined ratio of nitrogen gas.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在使用相同的Ti金属靶时连续且稳定地形成Ti膜和TiN膜的技术。解决方案：该制造方法包括用含有惰性气体和氮气的预处理气体溅射Ti金属靶，以便先前氮化基体的表面，然后用含有惰性气体的反应气体溅射Ti金属靶气和氮气在基底上形成TiN膜。该制造方法可以稳定地形成TiN膜，并且可以施加大量的用于溅射的电力。在上述氮化工序中，优选通过用反应气体预先溅射Ti金属靶来预处理Ti金属靶; 当Ti金属靶的表面是Ti金属靶的表面为...时，确定溅射电力（点P 2 的位置）或氮气比（点P 12 的位置）从金属Ti变为TiN; 以及施加等于或小于所确定的溅射电力的溅射电力，或者以等于或高于确定的氮气比的氮气的比率引入预处理气体。版权所有（C）2005，JPO＆NCIPI

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