专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2005149956A Method and apparatus for performing plasma processing with high uniformity over large area 审中-公开
标题翻译：用于大面积高均匀性处理等离子体处理的方法和装置
公开(公告)号：JP2005149956A
公开(公告)日：2005-06-09
申请号：JP2003387060
申请日：2003-11-17
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： KUWAHARA KIYOSHI , HAYASHI TOSHIO , KIKUCHI MASASHI , IKEDA HITOSHI , YAMAGATA TAKAHIRO , IWATA KENICHI , HARASHIMA NORIYUKI , SASAKI TAKAHIDE
IPC分类号： H05H1/46 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for performing plasma processing with high uniformity over a large area, which overcome drawbacks of a conventional processing method. SOLUTION: The apparatus for performing plasma processing with high uniformity over a large area uses a high frequency power supply of 1 MHz or higher such as a radio frequency or a microwave. The apparatus comprises a nozzle or a gas ejecting hole, and also comprises at least one gas feeding system configured to subject a process gas to plasma-decomposition to thereby intensively introduce a process gas species into a discharge space where plasma is generated. A substrate is placed perpendicularly to the gas feeding system in a region which is affected by the gas flow in a downstream area of a plasma generating section. The apparatus further comprises a gas exhaust system configured so that the gas flow is selectable from a molecular flow to a viscous flow in a region from the nozzle or gas ejecting hole of the gas feeding system to the surface of the substrate. In the method for performing plasma processing on a substrate having a large area using a high frequency power supply of 1 MHz or higher such as a radio frequency or a microwave, the process gas is subjected to plasma-decomposition so as to intensively introduce the process gas into the discharge space where plasma is generated. A shock wave is thereby generated to cause movement of the gas due to a compressional wave on the surface of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在大面积上以高均匀性进行等离子体处理的方法和装置，其克服了常规处理方法的缺点。解决方案：在大面积上以高均匀性进行等离子体处理的装置使用1MHz以上的高频电源，例如射频或微波。该装置包括喷嘴或气体喷射孔，并且还包括至少一个气体供给系统，其构造成使处理气体进行等离子体分解，从而将工艺气体物质集中地引入到产生等离子体的放电空间中。在受等离子体产生部分的下游区域中的气流影响的区域中，垂直于气体供给系统放置衬底。该装置还包括气体排出系统，其被构造成使得气体流可以从在气体供给系统的喷嘴或气体喷射孔到基底表面的区域中的分子流到粘性流可选择。在使用1MHz以上的高频电源（例如射频或微波）在具有大面积的基板上进行等离子体处理的方法中，对处理气体进行等离子体分解，从而将该工序气体进入产生等离子体的放电空间。由此产生冲击波，使得由于压缩波而导致的气体在基板的表面上移动。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005133171A Method for etching chromium film, and method for manufacturing photomask 有权
标题翻译：蚀刻铬膜的方法和制造光电子的方法
公开(公告)号：JP2005133171A
公开(公告)日：2005-05-26
申请号：JP2003372085
申请日：2003-10-31
申请人： Semiconductor Leading Edge Technologies Inc , Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック , 株式会社半導体先端テクノロジーズ
发明人： TANAKA YOSHIYUKI , HARASHIMA NORIYUKI , SASAKI TAKAHIDE , KUWABARA KIYOSHI , HAYASHI TOSHIO
IPC分类号： H05H1/46 , C23F4/00 , G03F1/54 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for etching a chromium film uniformly within the surface with a high etching rate, when etching the film with the use of an etching apparatus using a magnetic neutral line.
SOLUTION: The etching apparatus comprises a magnetic coil for forming the magnetic neutral line inside a vacuum chamber, and an antenna for forming an alternating electric field along the magnetic neutral line to generate dense plasma in the vicinity of the magnetic neutral line. In the method for etching the chromium film using the etching apparatus, when a magnetic field gradient in the vicinity of the magnetic neutral line formed by the magnetic coil is controlled to 2 gauss/cm, the magnetic neutral line with a radius of 35 mm or smaller, is formed by controlling a value of a current passing through the magnetic coil and the magnetic neutral line generates plasma.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供以高蚀刻速率在表面内均匀蚀刻铬膜的方法，当使用使用磁性中性线的蚀刻装置蚀刻该膜时。解决方案：蚀刻装置包括用于在真空室内形成磁中性线的磁线圈，以及用于沿着磁中性线形成交变电场的天线，以在磁中性线附近产生致密等离子体。在使用蚀刻装置蚀刻铬膜的方法中，当由磁性线圈形成的磁性中性线附近的磁场梯度被控制为2高斯/ cm时，半径为35mm的磁性中性线或通过控制通过磁线圈的电流的值而形成的较小，并且磁性中性线产生等离子体。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2003282547A Method and apparatus for performing plasma treatment with high selectivity and high uniformity over large area 审中-公开
标题翻译：在大面积高选择性和高均匀性下进行等离子体处理的方法和装置
公开(公告)号：JP2003282547A
公开(公告)日：2003-10-03
申请号：JP2002086352
申请日：2002-03-26
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： KIKUCHI MASASHI , IKEDA HITOSHI , KUWAHARA KIYOSHI , HAYASHI TOSHIO , HARASHIMA NORIYUKI , SASAKI TAKAHIDE
IPC分类号： H05H1/46 , C03C15/00 , C03C17/06 , H01L21/3065
CPC分类号： C03C17/06 , C03C15/00 , C03C2217/26 , C03C2218/33
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for performing plasma treatment with high selectivity and high precision over a large area using pulse-modulated plasma. SOLUTION: This method for plasma treatment is constituted by respectively applying pulse-modulated electric power to a plasma-generating power source and to a substrate-bias power source, wherein a pulse modulation is based on the diffusion time of gas from the central part of discharge to the substrate. The apparatus for the plasma treatment is furnished with a modulation means for applying the pulse-modulated electric power to the plasma-generating part and one to the substrate electrode, respectively in the plasma-generating power source and in the substrate bias power source, wherein the pulse modulation is based on the diffusion time of the gas from the central part of discharge to the substrate. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种使用脉冲调制等离子体在大面积上以高选择性和高精度执行等离子体处理的方法和装置。解决方案：这种等离子体处理方法是通过分别向等离子体产生电源和衬底偏置电源施加脉冲调制电力构成的，其中脉冲调制基于来自中心部分放电到基板。用于等离子体处理的装置配备有调制装置，用于分别在等离子体发生电源和衬底偏置电源中将脉冲调制电力施加到等离子体产生部分和一个到基板电极，其中脉冲调制基于气体从放电中心部分到衬底的扩散时间。版权所有（C）2004，JPO

4. 发明专利

JP2007212738A Photomask blank and method of manufacturing same, and method of manufacturing photomask using photomask blank 审中-公开
标题翻译： PHOTOMASK BLANK及其制造方法以及使用PHOTOMASK BLANK制造光电子的方法
公开(公告)号：JP2007212738A
公开(公告)日：2007-08-23
申请号：JP2006032176
申请日：2006-02-09
申请人： Ulvac Seimaku Kk , アルバック成膜株式会社
发明人： HARASHIMA NORIYUKI , ISO HIROYUKI , UMEO NAOHIRO , ISOZAKI TATSUYA
IPC分类号： G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a binary chromium mask blank and a halftone phase shift mask blank each having a minimum line width of ≤100 nm, and to provide a method of manufacturing the mask blank.
SOLUTION: The chromium mask blank that can be used for lithographic processes of a semiconductor integrated circuit requiring uniformity with high accuracy of a minimum line width of ≤100 nm using an exposure light wavelength of 193 nm or 157 nm includes a transparent substrate and a single layer film of an oxide film, a nitride film, a hydrogenated film, a carbide film or a combination of these films, formed into a film thickness giving an optical density of 1.8 to 3.0 at the exposure wavelength.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有最小线宽≤100nm的二元铬掩模毛坯和半色调相移掩模板，并提供制造掩模毛坯的方法。解决方案：使用193nm或157nm的曝光光波长，可以用于半导体集成电路的平版印刷工艺的铬掩模板，其需要具有≤100nm的最小线宽度的最小线宽度的高精度的均匀性，包括透明基板以及在曝光波长处形成为具有1.8至3.0的光密度的膜厚的氧化膜，氮化物膜，氢化膜，碳化物膜或这些膜的组合的单层膜。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006078953A Halftone phase shift mask and its manufacturing method 审中-公开
标题翻译： HALFTONE相位移屏蔽及其制造方法
公开(公告)号：JP2006078953A
公开(公告)日：2006-03-23
申请号：JP2004265245
申请日：2004-09-13
申请人： Ulvac Seimaku Kk , アルバック成膜株式会社
发明人： HARASHIMA NORIYUKI , ISO HIROYUKI , KANAI SHUICHIRO
IPC分类号： C23C14/06 , G03F1/29 , G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a halftone phase shift mask having the high transmittance of over 6% (9 to 15%), suppressing side etching in a halftone film portion, and having the smooth horizontal plane of a quartz surface, and to provide a method for manufacturing the mask.
SOLUTION: The halftone phase shift mask is produced by forming a MoSi-based halftone phase shift film having a film thickness giving a phase difference of ≤135° on a quartz glass substrate and engraving the quartz glass substrate with high perpendicular property and in-plane uniformity by dry etching by magnetic neutral line discharge plasma. The method for manufacturing a halftone phase shift mask includes steps of forming the MoSi halftone phase shift film having a film thickness giving the phase difference of ≤135° on the quartz glass substrate by reactive sputtering and etching the quartz glass substrate using a chromium film as a mask by dry etching by magnetic neutral line discharge plasma with addition of a gas having an effect of protecting a side wall to the process gas.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有超过6％（9至15％）的高透射率的半色调相移掩模，抑制半色调膜部分中的侧蚀刻并且具有石英表面的平滑水平面，并提供一种制造掩模的方法。解决方案：通过在石英玻璃基板上形成具有相位差≤135°的膜厚度的MoSi基半色调相移膜，并以高垂直特性雕刻石英玻璃基板来制造半色调相移掩模，通过磁性中性线放电等离子体进行干蚀刻的面内均匀性。半色调相移掩模的制造方法包括以下步骤：通过反应溅射在石英玻璃基板上形成具有≤135°的相位差的膜厚的MoSi半色调相移膜，并使用铬膜蚀刻石英玻璃基板通过用磁性中性线进行干法蚀刻的掩模，通过添加具有将侧壁保护到工艺气体的作用的气体。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2000114246A DRY ETCHING METHOD AND APPARATUS, PHOTORESIST MASK AND METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR CIRCUIT AND METHOD OF PRODUCING THE SAME 失效
公开(公告)号：JP2000114246A
公开(公告)日：2000-04-21
申请号：JP30900298
申请日：1998-10-29
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： SASAKI TAKAHIDE , HARASHIMA NORIYUKI , AOYAMA SATORU , SAKAMOTO SHOICHI
IPC分类号： H01L21/302 , G03F1/08 , G03F1/80 , G03F7/40 , H01L21/3065 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To reduce differences in dimension due to difference in pattern density on the surface by using a mixed gas, in which reducing gas is added to reactive etching gas consisting of oxygen containing gas and halogen containing gas in dry etching process of a metal thin film. SOLUTION: When patterning material of a substrate 11 on an RF electrode 10 is etched, an etching chamber 2 is evacuated by an vacuum system, and a mixed gas is introduced through reactive etching gas inlet 30 into the chamber 2 by a gas-supply system 16 comprising a gas cylinder and a massflow controller, the mixed gas in which reducing gas containing hydrogen is added to reactive etching gas which consists of oxygen containing gas and halogen containing gas. Two pairs of electromagnets 5, 6, 7, 8 is excited, and plasma is excited by applying RF power to the RF electrode 10. As a result, the difference in dimensions can be reduced due to the difference in pattern density on the surface of the substrate 11, and highly accurate photoresist mask can be obtained.

7. 发明专利

JP2000150464A METHOD AND DEVICE FOR DRY ETCHING 失效
公开(公告)号：JP2000150464A
公开(公告)日：2000-05-30
申请号：JP32859598
申请日：1998-11-18
申请人： ULVAC SEIMAKU KK
发明人： HARASHIMA NORIYUKI , HAYASHI ATSUSHI , SASAKI TAKAHIDE
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a good in-plane evenness in a pattern dimension of a chrome mask by using a square or trapezoidal wave AC instead of sine wave AC as a current flowing a magnetic field generating coil for stronger magnetic field, and raising the magnitude of the resultant magnetic field vector at four corner parts for slower etching. SOLUTION: An RF electrode surface 10 provided in an etching chamber 2 is provided with a photo-mask substrate 11 which is covered with a pattern material, over which a photo-resist with a pattern formed is provided, the magnetic field generating coil of two pairs of electromagnets 5, 6, 7, and 8 is applied with a square wave current or trapezoidal current with phase deviated by 90 deg.C, the resultant magnetic field is rotated in the plane parallel to a substrate, and the pattern material is etched by reactive ion etching. The magnitude of the resultant vector is larger compared to the case of sine wave. Here, the current is deformed so that the rotary magnetic field intensity is enhanced at four corner parts, for suppressing the rise of etching speed, resulting in good in-plane evenness of pattern dimension.

8. 发明专利

JP2000138201A METHOD AND SYSTEM FOR DRY ETCHING OF HALF-TONE PHASE SHIFTED FILM, HALF-TONE PHASE SHIFTED PHOTOMASK AND MANUFACTURE THEREOF, AND SEMICONDUCTOR CIRCUIT AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000138201A
公开(公告)日：2000-05-16
申请号：JP30901098
申请日：1998-10-29
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： SASAKI TAKAHIDE , HARASHIMA NORIYUKI , AOYAMA SATORU , SAKAMOTO SHOICHI
IPC分类号： H01L21/302 , C23F4/00 , G03F1/32 , G03F1/68 , G03F1/80 , H01L21/306 , H01L21/3065 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To reduce dimensional differences due to inconsistencies in pattern density in a plane by using a mixed gas, wherein a reducing gas is added to a reactive ion etching gas consisting of an oxygen-containing gas and a halogen- containing gas as a reactive etching gas. SOLUTION: A dry etching system (MERIE system) allows dry etching to a chromic half-tone phase shift film. At this time, a mixed gas wherein a gas containing at least hydrogen, such as H2, and HCl gas, is added to a halogen- containing gas such as Cl2+O2 is used. This enables dimensional control with in a plane which is equal to that of a mask wherein patterns are formed in generally uniform density in a plane, namely, which can extremely reduce dimensional differences in the design dimension of one to two μm wide, even in a chromic half-tone phase shift photomask, wherein film and rough patterns coexist within a plane.

9. 发明专利

JP2002033306A METHOD OF CONTROLLING SPATIAL DISTRIBUTION OF INDUCTIVELY- COUPLED PLASMA, AND PLASMA GENERATOR FOR EXECUTING THE METHOD AND ETCHING APPARATUS 失效
公开(公告)号：JP2002033306A
公开(公告)日：2002-01-31
申请号：JP2000212528
申请日：2000-07-13
申请人： ULVAC SEIMAKU KK , ULVAC CORP
发明人： SASAKI TAKAHIDE , HAYASHI ATSUSHI , HARASHIMA NORIYUKI , IKEDA HITOSHI
IPC分类号： H05H1/46 , B01J19/08 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method of controlling spatial distribution of plasma, by which etching rate can be uniformized, even with a wide area. SOLUTION: When discharge plasma is generated in a vacuum chamber by using at least a double loop-shaped antenna, the other space of counterposed sites from the viewpoint of the diameter of the adjacent loop-shaped antenna is changed continuously to one space of the counterposed sites, maintaining an intermediate site between the counterposed sites in parallel with the surface of an article to be treated.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式