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    • 2. 发明申请
    • RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS
    • 随机存取存储器,包括纳米管开关元件
    • WO2006137876A2
    • 2006-12-28
    • PCT/US2005/033718
    • 2005-09-20
    • NANTERO, INC.BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.
    • BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.
    • G01H1/00
    • G11C13/025B82Y10/00B82Y30/00G11C14/00G11C23/00H01H1/0094
    • Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line. The release electrode of the first nanotube switching element is coupled to the release electrode of the second nanotube switching element and wherein both release electrodes are coupled to a release line. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
    • 随机存取存储器包括纳米管开关元件。 存储单元包括第一和第二纳米管切换元件和电子存储器。 每个纳米管开关元件包括输出节点,具有至少一个导电纳米管的纳米管通道元件和具有相对于纳米管通道元件设置的设定电极和释放电极的控制结构,以可控地形成和取消导电通道 在所述通道电极和所述输出节点之间。 电子存储器具有交叉耦合的第一和第二逆变器。 第一反相器的输入节点耦合到第一纳米管开关元件的设定电极和第二纳米管开关元件的输出节点。 第二反相器的输入节点耦合到第二纳米管开关元件的设定电极和第一纳米管开关元件的输出节点; 并且沟道电极耦合到沟道电压线。 第一纳米管开关元件的释放电极耦合到第二纳米管开关元件的释放电极,并且其中两个释放电极耦合到释放线。 电池可以作为普通电子存储器工作,或者可以在阴影存储器或存储模式(例如,当电力中断时)操作以将电子存储器状态传送到纳米管开关元件。 该装置可以稍后在调谐模式下操作,其中纳米管切换元件的状态可以被传送到电子存储器。
    • 3. 发明申请
    • NANOTUBE-BASED SWITCHING ELEMENTS AND LOGIC CIRCUITS
    • 基于NANOTUBE的开关元件和逻辑电路
    • WO2005084164A2
    • 2005-09-15
    • PCT/US2004/026062
    • 2004-08-12
    • NANTERO, INC.BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.
    • BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.
    • G11C13/02H01H1/027H01H59/00H01L21/00H01L27/28H01L29/06H01L29/72H01L29/73H01L29/78H01L51/30
    • H01L29/0665B82Y10/00G11C13/025G11C23/00G11C2213/16G11C2213/17H01H1/0094H01H1/027H01H2001/0005H01L27/28H01L29/0673H01L29/73H01L29/78H01L51/0048H01L51/0508Y10S977/762Y10S977/932Y10S977/94Y10T29/49002
    • Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, and output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
    • 基于纳米管的开关元件和逻辑电路。 在本发明的一个实施例中,开关元件包括输入节点和输出节点,具有至少一个导电纳米管的纳米管通道元件和控制电极。 控制电极相对于纳米管通道元件设置,以在输入节点和输出节点之间可控制地形成导电通道。 通道至少包括所述纳米管通道元件。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 在本发明的另一实施例中,控制电极相对于纳米管通道元件布置,以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。 在本发明的另一个实施例中,输出节点包括相对于纳米管通道元件设置的隔离结构,使得通道形成从输出节点的状态基本上是不变的。 在本发明的另一个实施例中,隔离结构包括设置在纳米管通道元件的相对侧上的电极,并且所述电极产生基本上相同的电场。 在本发明的另一实施例中,布尔逻辑电路包括至少一个输入端子和输出端子,以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。 纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。 布尔函数变换包括函数内的布尔反转,如NOT或NOR函数。
    • 5. 发明申请
    • NANOTUBE DEVICE STRUCTURE AND METHODS OF FABRICATION
    • NANOTUBE器件结构和制造方法
    • WO2005017967A2
    • 2005-02-24
    • PCT/US2004/026075
    • 2004-08-12
    • NANTERO, INC.BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.
    • BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.
    • H01L
    • H01L29/0665B82Y10/00G11C13/025G11C23/00H01H1/0094H01H1/027H01H2001/0005H01L27/28H01L29/0673H01L29/73H01L29/78H01L51/0048H01L51/0508Y10S977/725Y10S977/733Y10S977/755Y10S977/938Y10T29/49105
    • Under one embodiment, a method of forming a nanotube switching element includes forming a first structure having at least one output electrode, forming a conductive article having at least one nanotube, and forming a second structure having at least one output electrode and positioning said second structure in relation to the first structure and the conductive article such that the output electrode of the first structure is opposite the output electrode of the second structure and such that a portion of the conductive article is positioned therebetween. At least one signal electrode is provided in electrical communication with the conductive article having at least one nanotube, and at least one control electrode is provided in relation to the conductive article such that the conductive electrode may control the conductive article to form a channel between the signal electrode and at least one of the output electrodes. The first and second structures each include a respective second output electrode and wherein the second electrodes are positioned opposite each other with the conductive article positioned therebetween. The control electrode and the second control electrode includes an insulator layer on a surface facing the conductive article.
    • 在一个实施例中,形成纳米管切换元件的方法包括形成具有至少一个输出电极的第一结构,形成具有至少一个纳米管的导电制品,并形成具有至少一个输出电极的第二结构,并且将所述第二结构 相对于第一结构和导电制品,使得第一结构的输出电极与第二结构的输出电极相对,并且导电制品的一部分位于它们之间。 提供至少一个信号电极与具有至少一个纳米管的导电制品电连通,并且相对于导电制品提供至少一个控制电极,使得导电电极可以控制导电制品以在导电制品之间形成通道 信号电极和至少一个输出电极。 第一和第二结构各自包括相应的第二输出电极,并且其中第二电极彼此相对定位,导电制品位于它们之间。 控制电极和第二控制电极在面向导电物品的表面上包括绝缘体层。
    • 8. 发明申请
    • NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME
    • 非挥发性电磁场效应装置及其使用方法及其形成方法
    • WO2005001899A2
    • 2005-01-06
    • PCT/US2004/018349
    • 2004-06-09
    • NANTERO, INC.BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.VOGELI, BernhardBROCK, Darren, K.JAIPRAKASH, Venkatachalam, C.
    • BERTIN, Claude, L.RUECKES, ThomasSEGAL, Brent, M.VOGELI, BernhardBROCK, Darren, K.JAIPRAKASH, Venkatachalam, C.
    • H01L
    • H01L29/78B82Y10/00B82Y99/00G11C7/065G11C13/025G11C16/0416G11C17/16G11C17/165G11C23/00G11C2213/16G11C2213/17G11C2213/79H01H1/0094H01L27/10H01L27/1052H01L27/112H01L27/11206H01L27/115H01L27/286H01L29/0665H01L29/0673H01L29/42324H01L51/0048H01L51/0052H01L51/0508Y10S977/708Y10S977/724Y10S977/742Y10S977/762Y10S977/936Y10S977/938Y10S977/94Y10S977/943
    • Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non­volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.
    • 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极,漏极和栅极。 源极,漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极,漏极和栅极之一及其对应的端子之间。 源极,漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于两个控制端子处的电刺激而机电可偏转以产生源极,漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。 在一个实施例中,当创建非易失性打开状态时,两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。 在一个实施例中,源极,漏极和栅极可以在从地面到电源电压的任何电压电平下被激励,并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。 在一个实施例中,纳米管开关元件包括由纳米制成的制品,其位于两个控制端子之间。 在一个实施例中,两个控制端子之一是用于静电拉动纳米管制品的释放电极,与源极,漏极和栅极之一不接触,以形成非易失性的打开状态。 在一个实施例中,两个控制端子中的另一个是用于静电拉动纳米管制品与源极,漏极和栅极之一接触的设置电极,以便形成非易失性闭合状态。
    • 9. 发明申请
    • TRIODES USING NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME
    • 使用南方文章的三方及其制作方法
    • WO2009005908A2
    • 2009-01-08
    • PCT/US2008/064385
    • 2008-05-21
    • NANTERO, INC.SEGAL, Brent, M.RUECKES, ThomasWARD, Jonathan, W.
    • SEGAL, Brent, M.RUECKES, ThomasWARD, Jonathan, W.
    • H01J27/26
    • H01J21/10H01J3/021H01J19/38H01J2203/0232Y10S977/742
    • Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally- disposed nanotube fabrics are disclosed, as are CMOS -compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low -power devices that can be employed in radiation-intensive applications.
    • 提供具有碳纳米管膜,层,带和织物的真空微电子器件。 本发明公开了包括三端(发射极,栅极和阳极)的三极管结构的微电子真空装置,以及诸如四极和五极管的高阶器件,所有这些都使用碳纳米管来形成 设备。 在某些实施例中,纳米管织物的图案化部分可以用作栅极/栅极部件,导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中,使用用于加强纳米管织物层的方法。 公开了用于施加,选择性地去除(例如蚀刻)悬浮和加强垂直和水平布置的纳米管织物的各种方法,以及CMOS相容的制造方法。 在某些实施例中,纳米管织物三极管提供可用于辐射密集型应用中的高速度,小规模的低功率器件。