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1. 发明申请

WO2011081645A3 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 审中-公开
标题翻译：调整基片温度以改善CD均匀度
公开(公告)号：WO2011081645A3
公开(公告)日：2011-10-20
申请号：PCT/US2010003149
申请日：2010-12-13
申请人： LAM RES CORP , GAFF KEITH WILLIAM , SINGH HARMEET , COMENDANT KEITH , VAHEDI VAHID
发明人： GAFF KEITH WILLIAM , SINGH HARMEET , COMENDANT KEITH , VAHEDI VAHID
IPC分类号： H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：摘要一种等离子体蚀刻系统，具有带多个可独立控制的加热器区域的基板支撑组件等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，使得可以补偿关键器件参数的预蚀刻和/或蚀刻后不均匀性。

2. 发明申请

WO2008049024B1 METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS 审中-公开
标题翻译：用于调整一组等离子体处理步骤的方法和设备
公开(公告)号：WO2008049024B1
公开(公告)日：2008-06-05
申请号：PCT/US2007081682
申请日：2007-10-17
申请人： LAM RES CORP , VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
发明人： VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了调整一组等离子体处理步骤的方法。该方法包括在等离子体处理系统的等离子体反应器中撞击包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻衬底上的一组层; 将可移动均匀环定位在所述衬底周围，其中所述均匀环的底表面与所述衬底的顶表面的高度大致相同; 并在等离子体处理系统的等离子体反应器中撞击基本上由中性物质组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的该组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

3. 发明申请

WO2006036753A3 METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS 审中-公开
标题翻译：用于调整一套等离子体处理步骤的方法和装置
公开(公告)号：WO2006036753A3
公开(公告)日：2007-01-25
申请号：PCT/US2005034034
申请日：2005-09-21
申请人： LAM RES CORP , VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
发明人： VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
IPC分类号： B44C1/22 , C23F1/00 , H01L21/00
CPC分类号： C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642 , H01L21/32136
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals (320a) and ions (320b) in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate (303); positioning a movable uniformity ring (302) around the substrate, including an opening (308) that is configured for directing species of plasma towards chuck (314), wherein, a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包括中性粒子（320a）和离子（320b）的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底（303）上的一组层; 将可移动均匀环（302）定位在所述基底周围，包括构造成用于将等离子体的种类引导到卡盘（314）的开口（308），其中，所述均匀环的底表面与顶表面大约相同的高度的基底; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

4. 发明申请

WO2010062345A3 LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：等离子体处理室的下电极组件
公开(公告)号：WO2010062345A3
公开(公告)日：2010-08-12
申请号：PCT/US2009005857
申请日：2009-10-29
申请人： LAM RES CORP , AUGUSTINO JASON , CHAU QUAN , GAFF KEITH WILLIAM , HA HANH TUONG , RICHARDSON BRETT C , SINGH HARMEET
发明人： AUGUSTINO JASON , CHAU QUAN , GAFF KEITH WILLIAM , HA HANH TUONG , RICHARDSON BRETT C , SINGH HARMEET
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01J37/20 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32642 , H01J37/32715
摘要： A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.
摘要翻译：用于等离子体处理室的下电极组件包括金属基座和上下边缘环。金属基底包括钎焊在一起的金属板，在基座的下侧表面上形成钎焊线，从下侧表面向水平方向内延伸的边缘环支撑表面和在边缘环支撑表面上方的上侧表面。上边缘环包括安装在边缘环支撑表面上的下表面，并且下边缘环围绕底部的下侧表面，在上边缘环和下边缘环的相对表面之间以及下边缘环和外侧边缘环的相对表面之间具有间隙基地周边。间隙具有总间隙长度与平均间隙宽度的宽高比，足以阻止钎焊线位置处的电弧。

5. 发明申请

WO2011056484A3 METHOD AND APPARATUS OF HALOGEN REMOVAL 审中-公开
标题翻译：杀虫剂的方法和装置
公开(公告)号：WO2011056484A3
公开(公告)日：2011-08-04
申请号：PCT/US2010053858
申请日：2010-10-22
申请人： LAM RES CORP , SINGH HARMEET , SANT SANKET , CHOU SHANG-I , VAHEDI VAHID , CASAES RAPHAEL , RAMACHANDRAN SEETHARAMAN
发明人： SINGH HARMEET , SANT SANKET , CHOU SHANG-I , VAHEDI VAHID , CASAES RAPHAEL , RAMACHANDRAN SEETHARAMAN
IPC分类号： H01L21/302 , H01L21/677
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67115 , H01L21/6719 , H01L21/67201 , H01L21/67207
摘要： A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.
摘要翻译：将晶片设置在入口加载锁定室中。在入口装载锁定室中产生真空。晶片被输送到处理工具。在处理室中处理晶片以提供经处理的晶片，其中处理形成卤素残余物。在处理晶片之后，在处理室中提供脱气步骤。将经处理的晶片转移到脱气室中。处理的晶片在脱气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气体流进行处理。停止气体流动。 UV灯停止。将经处理的晶片从脱气室中取出。

6. 发明申请

WO2007149210A3 GAS INJECTION TO ETCH A SEMICONDUCTOR SUBSTRATE UNIFORMLY 审中-公开
标题翻译：注入半导体衬底的气体注入均匀
公开(公告)号：WO2007149210A3
公开(公告)日：2008-02-07
申请号：PCT/US2007013159
申请日：2007-06-05
申请人： LAM RES CORP , SINGH HARMEET , COOPERBERG DAVID , VAHEDI VAHID
发明人： SINGH HARMEET , COOPERBERG DAVID , VAHEDI VAHID
IPC分类号： H01L21/02
CPC分类号： H01L21/6708 , H01J37/321 , H01J37/3244 , H01J2237/334 , H01L21/3065 , H01L21/32137
摘要： A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.
摘要翻译：蚀刻具有改善的临界尺寸均匀性的半导体衬底的方法包括在电感耦合等离子体蚀刻室中的衬底支撑件上支撑半导体衬底; 向所述半导体衬底上的中心区域提供第一蚀刻气体; 将包含至少一种含硅气体的第二气体供应到围绕所述中心区域的所述半导体衬底上的周边区域，其中所述第二气体中的硅浓度大于所述第一蚀刻气体中的硅浓度; 从第一蚀刻气体和第二气体产生等离子体; 并且等离子体蚀刻半导体衬底的暴露表面。

7. 发明申请

WO03034463A3 TUNABLE MULTI-ZONE GAS INJECTION SYSTEM 审中-公开
标题翻译：可控多区域气体注入系统
公开(公告)号：WO03034463A3
公开(公告)日：2003-06-19
申请号：PCT/US0232057
申请日：2002-10-09
申请人： LAM RES CORP , COOPERBERG DAVID J , VAHEDI VAHID , RATTO DOUGLAS , SINGH HARMEET , BENJAMIN NEIL
发明人： COOPERBERG DAVID J , VAHEDI VAHID , RATTO DOUGLAS , SINGH HARMEET , BENJAMIN NEIL
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/3065 , C23C16/50
CPC分类号： C23C16/45574 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J2237/3323 , H01J2237/3344
摘要： A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates (13) such as semiconductor wafers. The system includes a plasma processing chamber (10), a substrate support (16) for supporting a substrate within the processing chamber, a dielectric member (20) having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector (22) fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source (19) such as a planar or non-planar spiral coil (18) which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.
摘要翻译：一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底（13）的等离子体处理。该系统包括等离子体处理室（10），用于在处理室内支撑衬底的衬底支撑件（16），具有面向衬底支撑件的内表面的电介质构件（20），该电介质构件形成处理壁腔室，固定到电介质窗口中的开口的一部分或可移除地安装在介电窗口中的开口中的气体注入器（22），气体注射器包括多个气体出口，其以可调节的流量向腔室的多个区域提供处理气体，并且RF能量源极（19），例如平面或非平面螺旋线圈（18），其将RF能量通过电介质构件感应耦合并进入腔室，以将处理气体激励成等离子体状态。喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

8. 发明申请

WO2011049620A3 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：带有平面加热区的加热板用于半导体加工
公开(公告)号：WO2011049620A3
公开(公告)日：2011-11-03
申请号：PCT/US2010002794
申请日：2010-10-20
申请人： LAM RES CORP , SINGH HARMEET , GAFF KEITH , BENJAMIN NEIL , COMENDANT KEITH
发明人： SINGH HARMEET , GAFF KEITH , BENJAMIN NEIL , COMENDANT KEITH
IPC分类号： H01L21/68
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：用于半导体等离子体处理设备中的基板支撑组件的加热板包括以可缩放多路复用布局布置的多个独立可控的平面加热器区域以及用于独立地控制和驱动平面加热器区域的电子设备。其中结合有加热板的基板支撑组件包括静电夹持电极和温控基板。用于制造加热板的方法包括将具有平面加热器区域的陶瓷或聚合物片，电源线，电力返回线和过孔接合在一起。

9. 发明申请

WO2010055441A3 IMPROVED SUBSTRATE TEMPERATURE CONTROL BY USING LIQUID CONTROLLED MULTIZONE SUBSTRATE SUPPORT 审中-公开
标题翻译：液体控制多区衬底支撑改善衬底温度控制
公开(公告)号：WO2010055441A3
公开(公告)日：2010-07-08
申请号：PCT/IB2009054876
申请日：2009-11-03
申请人： LAM RES CORP , LAM RES AG , SINGH HARMEET , COMENDANT KEITH
发明人： SINGH HARMEET , COMENDANT KEITH
IPC分类号： C23C14/50 , C23C16/46
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/46 , C23C16/463 , C23C16/50 , C23C16/52 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.
摘要翻译：提供可用于等离子体处理设备的反应室中的衬底支撑件。基板支撑件包括基座构件和覆盖基座构件的传热构件。传热构件具有多个区域以分别加热和冷却传热构件的每个区域。静电吸盘覆盖传热构件。静电吸盘具有用于支撑等离子体处理设备的反应室中的基板的支撑表面。冷液体源和热液体源与每个区域中的流动通道流体连通。阀装置可操作以通过调节热流体与在流动通道中循环的冷流体的混合比来独立地控制液体的温度。在另一个实施例中，沿供应管线和传输管线的加热元件在流动通道中循环之前加热来自液体源的液体。

10. 发明申请

WO2010067284A2 METHOD AND SYSTEM FOR CENTERING WAFER ON CHUCK 审中-公开
标题翻译：用于在卡盘上定中晶片的方法和系统
公开(公告)号：WO2010067284A2
公开(公告)日：2010-06-17
申请号：PCT/IB2009055503
申请日：2009-12-04
申请人： LAM RES CORP , O'NEILL ROBERT GRIFFITH , LUQUE JORGE , CHOU SHANG-I , SINGH HARMEET
发明人： O'NEILL ROBERT GRIFFITH , LUQUE JORGE , CHOU SHANG-I , SINGH HARMEET
IPC分类号： H01L21/68 , H01L21/687
CPC分类号： H01L21/67748 , G01N21/9501 , G01N2021/8864 , H01L21/67259 , H01L21/68
摘要： A wafer handling mechanism is operated to place a wafer on a chuck. A chucking force is then applied to the wafer, whereby wafer support features of the chuck transfer a defect pattern onto a surface of the wafer. The surface of the wafer is analyzed by a defect metrology tool to obtain a mapping of the defect pattern transferred onto the surface of the wafer. A center coordinate of the chuck within a coordinate system of the wafer is determined by analyzing the defect pattern as transferred to the surface of the wafer. A spatial offset between the center coordinate of the chuck and the center of the wafer is determined. The spatial offset is used to adjust the wafer handling mechanism so as to enable alignment of the center of the wafer to the center coordinate of the chuck.
摘要翻译：操作晶片处理机构以将晶片放置在卡盘上。然后将夹紧力施加到晶片，由此夹盘的晶片支撑特征将缺陷图案转移到晶片的表面上。通过缺陷度量工具分析晶片的表面，以获得转移到晶片表面上的缺陷图案的映射。通过分析传送到晶片表面的缺陷图案来确定晶片的坐标系内的卡盘的中心坐标。确定卡盘的中心坐标和晶片的中心之间的空间偏移。空间偏移用于调整晶片处理机构，以使晶片的中心能够对准卡盘的中心坐标。

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