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    • 7. 发明申请
    • TUNABLE MULTI-ZONE GAS INJECTION SYSTEM
    • 可控多区域气体注入系统
    • WO2003034463A2
    • 2003-04-24
    • PCT/US2002/032057
    • 2002-10-09
    • LAM RESEARCH CORPORATIONCOOPERBERG, David, J.VAHEDI, VahidRATTO, DouglasSINGH, HarmeetBENJAMIN, Neil
    • COOPERBERG, David, J.VAHEDI, VahidRATTO, DouglasSINGH, HarmeetBENJAMIN, Neil
    • H01J37/32
    • C23C16/45574C23C16/507H01J37/321H01J37/3244H01J2237/3323H01J2237/3344
    • A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.
    • 一种用于等离子体处理系统的可调谐多区域注入系统,用于诸如半导体晶片的衬底的等离子体处理。 该系统包括等离子体处理室,用于在处理室内支撑衬底的衬底支撑件,具有面向衬底支撑件的内表面的电介质构件,形成处理室壁的电介质构件,固定到 或可移除地安装在电介质窗口的开口中,气体注射器包括多个气体出口,其以可调节的流速向腔室的多个区域供应处理气体,以及RF能量源,例如平面或非平面螺旋线圈,其中 将RF能量感应耦合通过电介质构件并进入腔室,以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口,其以第一流量向中心区域供应处理气体,并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外,与消耗式喷头装置相比,可以更容易且经济地更换可移除安装的气体喷射器。
    • 8. 发明申请
    • APPARATUS FOR PLASMA PROCESSING
    • 等离子体处理设备
    • WO00068985A1
    • 2000-11-16
    • PCT/JP2000/002770
    • 2000-04-27
    • H01J37/32H01L21/3065
    • H01J37/3255H01J37/32082H01J37/321H01J37/32165H01J2237/3323
    • An apparatus for plasma processing includes a first electrode (21) connecting a high-frequency power supply (40) to a chamber and a second and opposite electrode (5), between which a wafer (W) to be processed is placed. A material (51) capable of absorbing harmonics originating from the high-frequency power supply (40) is in contact with edges or peripheries of the first electrode (21) opposed to the second electrode (5) so as to absorb harmonics reflected by a high-frequency absorber before returning to the high-frequency power supply. The generation of standing waves attributed to harmonics is thus effectively prevented, producing a plasma of uniform density.
    • 用于等离子体处理的装置包括将高频电源(40)连接到室的第一电极(21)和第二和相对电极(5),在其间放置待处理的晶片(W)。 能够吸收源自高频电源(40)的谐波的材料(51)与与第二电极(5)相对的第一电极(21)的边缘或周边接触,以便吸收由 高频吸收器返回高频电源前。 因此有效地防止归因于谐波的驻波的产生,产生均匀密度的等离子体。