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1. 发明申请

WO2012133905A1 POWER TRANSMISSION DEVICE 审中-公开
标题翻译：电力传输装置
公开(公告)号：WO2012133905A1
公开(公告)日：2012-10-04
申请号：PCT/JP2012/059119
申请日：2012-03-27
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , TOYOTA JIDOSHA KABUSHIKI KAISHA , AISIN SEIKI KABUSHIKI KAISHA , TSUCHIYA, Eiji , WATANABE, Takao , ASAMI, Shu , MIYANO, Tatsuya , MURAKAMI, Akira , OGAWA, Hiroyuki , TOYAMA, Tomoyuki
发明人： TSUCHIYA, Eiji , WATANABE, Takao , ASAMI, Shu , MIYANO, Tatsuya , MURAKAMI, Akira , OGAWA, Hiroyuki , TOYAMA, Tomoyuki
IPC分类号： B60K6/448 , B60K6/30 , F02N5/04 , B60K6/26 , B60W30/18
CPC分类号： H02P25/22 , B60K6/30 , B60K6/448 , B60K2006/262 , B60K2006/266 , B60L11/123 , B60L11/14 , B60W30/18054 , B60W30/192 , F02N5/04 , F02N11/08 , F02N15/02 , F02N2300/2002 , H02K7/112 , H02K16/02 , H02K17/24 , H02K21/24 , Y02T10/6217 , Y02T10/6243 , Y02T10/641 , Y02T10/7077 , Y02T10/7258
摘要： During an inertial energy storage operation, electric power conversion at an inverter 40 is controlled such that a direct current electric power from an electric power storage device 42 is converted into an alternating current by the inverter 40 so as to be supplied to stator windings 20, such that torque in the direction of engine rotation is applied to an output side rotor 18 from a stator 16 to rotatively drive the output side rotor 18 in a state where power transmission from the output side rotor 18 to a drive axle 37 is stopped. During a cranking operation after the inertial energy storage operation, the electric power conversion at an inverter 41 is controlled so as to permit application of the alternating current to rotor windings 30, such that a torque in the direction of engine rotation is applied to an input side rotor 28 from the output side rotor 18, thereby rotatively driving an input side rotor 28 to crank the engine 36.
摘要翻译：在惯性能量存储操作期间，控制逆变器40的电力转换，使得来自蓄电装置42的直流电力由逆变器40转换为交流电，以供给定子绕组20，使得在从输出侧转子18到驱动轴37的动力传递停止的状态下，发动机旋转方向的转矩从定子16施加到输出侧转子18以旋转地驱动输出侧转子18。在惯性能量存储操作之后的起动操作期间，控制逆变器41的电力转换，以允许将交流电施加到转子绕组30，使得发动机转动方向上的扭矩施加到输入从输出侧转子18转动侧转子28，由此旋转地驱动输入侧转子28来使发动机36起动。

2. 发明申请

WO2010004410A1 TWIN-CLUTCH DEVICE 审中-公开
标题翻译：双离合器件
公开(公告)号：WO2010004410A1
公开(公告)日：2010-01-14
申请号：PCT/IB2009/006187
申请日：2009-07-08
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , OGAWA, Hiroyuki , MURAKAMI, Akira
发明人： OGAWA, Hiroyuki , MURAKAMI, Akira
IPC分类号： F16D37/02
CPC分类号： F16D37/02 , Y10T74/19228
摘要： In a twin-clutch device that selectively transmits torque from a driving wheel (9) to a first driven wheel (10) and/or a second driven wheel (11), the first and second driven wheels (10, 11) are arranged respectively on both sides of the driving wheel (9), a functional fluid (23) that decreases its flowability as an applied stimulus is increased and that increases its flowability as the applied stimulus is reduced fills gaps between the driving wheel (9) and the first and second driven wheels (10, 11), the driving wheel (9) includes a stimulus generating member (17) electrically controlled to generate a stimulus, and flowability of the functional fluid (23) between the driving wheel (9) and one of the first and second driven wheels (10, 11) is decreased with an increase in stimulus applied to the functional fluid (23) by the stimulus generating member (17) to couple the driving wheel (9) to the one of the first and second driven wheels (10, 11), thus allowing torque transmission therebetween.
摘要翻译：在从驱动轮（9）到第一从动轮（10）和/或第二从动轮（11）选择性地传递扭矩的双离合器装置中，分别布置第一和第二从动轮（10,11）在驱动轮（9）的两侧，随着施加的刺激而降低其流动性的功能流体（23）增加，并且随着施加的刺激被减小而增加其流动性填充驱动轮（9）和第一和第二从动轮（10,11），所述驱动轮（9）包括电控制以产生刺激的刺激产生构件（17）和所述驱动轮（9）之间的功能流体（23）之间的流动性随着由刺激产生构件（17）施加到功能流体（23）的刺激的增加，第一和第二从动轮（10,11）减小，以将驱动轮（9）联接到第一和第二驱动轮从动轮（10,11），从而允许扭矩传递切口白内障手术挽。

3. 发明申请

WO2005071749A1 EFFICIENT USE OF WAFER AREA WITH DEVICE UNDER THE PAD APPROACH 审中-公开
标题翻译：有效地利用了基于方法的装置
公开(公告)号：WO2005071749A1
公开(公告)日：2005-08-04
申请号：PCT/US2004/042879
申请日：2004-12-17
申请人： SPANSION, LLC , YANG, Nian , OGAWA, Hiroyuki , WU, Yider , CHANG, Kuo-Tung , SUN, Yu , HAMILTON, Darlene, G.
发明人： YANG, Nian , OGAWA, Hiroyuki , WU, Yider , CHANG, Kuo-Tung , SUN, Yu , HAMILTON, Darlene, G.
IPC分类号： H01L23/485
CPC分类号： H01L27/0203 , H01L24/05 , H01L24/06 , H01L2224/02166 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/14 , H01L2924/19043 , H01L2924/00014
摘要： More efficient use of silicon area is achieved by incorporating an active device (25) beneath a pad area (21) of a semiconductor structure (20). The pad area (21) includes a substrate (22) having a first metal layer (23) above it. A second metal layer (26) is below the first metal layer (23). The active device (25) resides in the substrate (22) below the second metal layer (26). A layet of dielectric layer (24) separates the first (26) and second metal layers (23). A via (27) within the dielectric layer (24) electrically couples the first (23) and second metal layers (26). A via (27) connects to the active component (25). Subsequent metal layers (424, 425, 426) can be arranged between the first (23) and second metal layers (26).
摘要翻译：通过在半导体结构（20）的焊盘区域（21）的下方并入有源器件（25）来实现硅面积的更有效的使用。焊盘区域（21）包括在其上方具有第一金属层（23）的基板（22）。第二金属层（26）位于第一金属层（23）的下方。有源器件（25）位于第二金属层（26）下面的衬底（22）中。电介质层（24）的层叠体分离第一（26）和第二金属层（23）。电介质层（24）内的通孔（27）电耦合第一（23）和第二金属层（26）。通孔（27）连接到有源部件（25）。随后的金属层（424,425,426）可以布置在第一（23）和第二金属层（26）之间。

4. 发明申请

WO2007035245A1 SPACERS BETWEEN BITLINES IN VIRTUAL GROUND MEMORY ARRAY 审中-公开
标题翻译：虚拟地面记忆阵列中的位置之间的间距
公开(公告)号：WO2007035245A1
公开(公告)日：2007-03-29
申请号：PCT/US2006/034508
申请日：2006-09-06
申请人： SPANSION LLC , OGAWA, Hiroyuki
发明人： OGAWA, Hiroyuki
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/11521 , H01L27/115
摘要： According to one exemplary embodiment, a method of fabricating a virtual ground memory array, which includes bitlines (402,404,406) situated in a substrate (434), includes forming (370) at least one recess (436,438) in the substrate (434) between two adjacent bitlines (402,404,406), where the at least one recess (436,438) is situated in a bitline contact region (132) of the virtual ground memory array, and where the at least one recess (436,438) defines sidewalls (452) and a bottom surface (454) in the substrate (434). The step of forming (370) the at least one recess (436,438) includes using hard mask segments (208,210,212) as a mask, where each of the hard mask segments (208,210,212) is situated over a bitline (202,204,206). The method further includes forming (374) a spacer (460,462) in the at least one recess (436,438), where the spacer (460,462) reduces bitline-to-bitline leakage between the adjacent bitlines (402,404,406). The method further includes forming stacked gate structures (114,116,118) before forming (370) the at least one recess (436,438), where each stacked gate structure (114,116,118) is situated over and perpendicular to the bitlines (102,104,106).
摘要翻译：根据一个示例性实施例，制造虚拟接地存储器阵列的方法，其包括位于衬底（434）中的位线（402,404,406），包括在衬底（434）中形成（370）至少一个凹部（436,438）相邻位线（402,404,406），其中所述至少一个凹部（436,438）位于所述虚拟接地存储器阵列的位线接触区域（132）中，并且其中所述至少一个凹部（436,438）限定侧壁（452）和底部衬底（434）中的表面（454）。形成（370）所述至少一个凹部（436,438）的步骤包括使用硬掩模段（208,210,212）作为掩模，其中每个硬掩模段（208,210,212）位于位线（202,204,206）之上。所述方法还包括在所述至少一个凹部（436,438）中形成（374）间隔物（460,462），其中所述间隔物（460,462）减少相邻位线之间的位线到位线泄漏（402,404,406）。该方法还包括在形成（370）所述至少一个凹部（436,438）之前形成堆叠的栅极结构（114,116,118），其中每个堆叠的栅极结构（114,116,118）位于并垂直于位线（102,104,106）。

5. 发明申请

WO2004022470A1 LIGHTING SYSTEM OF ELEVATOR 审中-公开
标题翻译：电梯照明系统
公开(公告)号：WO2004022470A1
公开(公告)日：2004-03-18
申请号：PCT/JP2003/011316
申请日：2003-09-04
申请人： TOSHIBA ELEVATOR KABUSHIKI KAISHA , ENDO, Masahiko , IKEDA, Kyoichi , OKADA, Kenichi , OGAWA, Hiroyuki
发明人： ENDO, Masahiko , IKEDA, Kyoichi , OKADA, Kenichi , OGAWA, Hiroyuki
IPC分类号： B66B11/02
CPC分类号： B66B13/301 , B66B11/0233 , B66B13/30 , B66B13/306
摘要： An elevator lighting system is provided, wherein replacement is easy, the number of replacing times is small, and maintenance work can be reduced. The elevator lighting system comprises an elevator cage (21), a plurality of cold-cathode fluorescent lamps (1) which are disposed on a ceiling surface (11) of the cage and arrayed in parallel, a reflection plate (3) which reflects an illumination light from the cold-cathode fluorescent lamp (1), and a stabilizer (2) which lights the cold-cathode fluorescent lamp 1. By prolonging a life of the cold-cathode fluorescent lamp (1), maintenance work is reduced to enable reduction of inconveniences to elevator users.
摘要翻译：提供了一种电梯照明系统，其中更换容易，更换次数少，可以降低维护工作。电梯照明系统包括电梯轿厢（21），多个冷阴极荧光灯（1），其设置在保持架的天花板表面（11）上并列排列;反射板（3）来自冷阴极荧光灯（1）的照明光以及点亮冷阴极荧光灯1的稳定器（2）。通过延长冷阴极荧光灯（1）的寿命，维护工作减少，减少电梯用户的不便。

6. 发明申请

WO2006138169A1 WORD LINES IN A FLASH MEMORY ARRAY 审中-公开
标题翻译： WASH LINES IN FLASH MEMORY ARRAY
公开(公告)号：WO2006138169A1
公开(公告)日：2006-12-28
申请号：PCT/US2006/022509
申请日：2006-06-07
申请人： SPANSION LLC , FANG, Shenqing , OGAWA, Hiroyuki , CHANG, Kuo-Tung , FASTENKO, Pavel , MIZUTANI, Kazuhiro , WANG, Zhigang
发明人： FANG, Shenqing , OGAWA, Hiroyuki , CHANG, Kuo-Tung , FASTENKO, Pavel , MIZUTANI, Kazuhiro , WANG, Zhigang
IPC分类号： H01L21/8247 , H01L27/115 , H01L21/336 , H01L29/788
CPC分类号： H01L29/7883 , H01L21/2652 , H01L27/115 , H01L27/11521 , H01L29/66825
摘要： Embodiments of the present invention disclose a memory device having an array [200] of flash memory cells with source contacts [280] that facilitate straight word lines [230], and a method [600] for producing the same. The array [200] is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions [250] that isolate a plurality of memory cell columns. A source column [260] is implanted with n- type dopants after the formation of a tunnel oxide layer [340] and a first polysilicon layer [330]. The implanted source column [260] is coupled to a plurality of common source lines [240] that are coupled to a plurality of source regions [350] associated with memory cells in the array [200]. A source contact [280] is coupled to the implanted source column [260] for providing electrical coupling with the plurality of source regions [350]. The source contact [280] is collinear with a row of drain contacts [275] that are coupled to drain regions [360] associated with a row of memory cells. The arrangement of source contacts [280] collinear with the row of drain contacts [275] allows for straight word line [230] formation.
摘要翻译：本发明的实施例公开了一种具有阵列[200]的存储器件，其具有促进直线字线[230]的源触点[280]的闪存单元，以及用于制造其的方法[600]。阵列[200]由隔离多个存储单元列的多个不相交的浅沟槽隔离（STI）区域[250]组成。在形成隧道氧化物层[340]和第一多晶硅层[330]之后，源极列[260]注入n型掺杂剂。注入源列[260]耦合到多个公共源极线[240]，其耦合到与阵列[200]中的存储器单元相关联的多个源极区域[350]。源极触点[280]耦合到注入源极柱[260]，用于提供与多个源极区域[350]的电耦合。源极触点280与一排漏极触点[275]共线，耦合到与一行存储器单元相关联的漏极区域[360]。与漏极触点排[275]共线的源极触点[280]的布置允许形成直线字线[230]。

7. 发明申请

WO2005074018A1 STRUCTURE AND METHOD FOR LOW VSS RESISITANCE AND REDUCED DIBL IN A FLOATING GATE MEMORY CELL 审中-公开
标题翻译：浮动栅格存储单元中低VSS电阻和减少的数据库的结构和方法
公开(公告)号：WO2005074018A1
公开(公告)日：2005-08-11
申请号：PCT/US2004/042870
申请日：2004-12-17
申请人： SPANSION LLC , FANG, Shenqing , THURGATE, Timothy , CHANG, Kuo-Tung , FASTOW, Richard , HUI, Angela, T. , MIZUTANI, Kazuhiro , KO, Kelwin , KINOSHITA, Hiroyuki , SUN, Yu , OGAWA, Hiroyuki
发明人： FANG, Shenqing , THURGATE, Timothy , CHANG, Kuo-Tung , FASTOW, Richard , HUI, Angela, T. , MIZUTANI, Kazuhiro , KO, Kelwin , KINOSHITA, Hiroyuki , SUN, Yu , OGAWA, Hiroyuki
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/743 , H01L29/41766 , H01L29/66636
摘要： According to one exemplary embodiment, a floating gate memory cell (202) comprises a stacked gate structure (208) situated on a substrate (204) and situated over a channel region (222) in the substrate (204). The floating gate memory cell (202) further comprises a recess (228) formed in the substrate (204) adjacent to the stacked gate structure (208), where the recess (228) has a sidewall (230), a bottom (232), and a depth (236). According to this exemplary embodiment, the floating gate memory cell (202) further comprises a source (234) situated adjacent to the sidewall (230) of the recess (228) and under the stacked gate structure (208). The floating gate memory cell (202) further comprises a Vss connection region (238) situated under the bottom (232) of the recess (228) and under the source (234), where the Vss connection region (238) is connected to the source (234). The Vss connection region (238) being situated under the bottom (232) of the recess (228) causes the source (234) to have a reduced lateral diffusion in the channel region (222).
摘要翻译：根据一个示例性实施例，浮动栅极存储单元（202）包括位于衬底（204）上且位于衬底（204）中的沟道区域（222）之上的层叠栅极结构（208）。浮动栅极存储单元（202）还包括形成在与堆叠的栅极结构（208）相邻的衬底（204）中的凹部（228），其中凹部（228）具有侧壁（230），底部（232），和深度（236）。根据该示例性实施例，浮动栅极存储单元（202）还包括位于与凹部（228）的侧壁（230）相邻并位于堆叠栅极结构（208）下方的源极（234）。浮动栅极存储单元（202）还包括位于凹部（228）的底部（232）下方并且在源极（234）下方的Vss连接区域（238），其中Vss连接区域（238）连接到来源（234）。位于凹部（228）的底部（232）下面的Vss连接区域（238）使得源极（234）在沟道区域（222）中具有减小的横向扩散。

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