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1. 发明申请

WO2014159629A1 CONFINED DEFECT PROFILING WITHIN RESISTIVE RANDOM MEMORY ACCESS CELLS 审中-公开
标题翻译：在电阻随机存储器访问单元中进行限制缺陷分析
公开(公告)号：WO2014159629A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/024500
申请日：2014-03-12
申请人： KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC , INTERMOLECULAR, INC.
发明人： WANG, Yun , GOPAL, Vidyut , HSUEH, Chien-Lan
IPC分类号： H01L45/00
CPC分类号： H01L45/10 , G11C13/0002 , G11C13/0007 , G11C2213/15 , G11C2213/51 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L45/08 , H01L45/1253 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.
摘要翻译：提供了电阻随机存取存储器（ReRAM）单元及其制造方法。可以对包括缺陷源层，缺陷阻挡层和设置在缺陷源层和缺陷阻挡层之间的缺陷受主层的堆叠进行退火。在退火过程中，缺陷以可控的方式从缺陷源层转移到缺陷受体层。同时，缺陷不会转移到缺陷阻挡层中，从而在缺陷受体层内形成最低浓度区。该区域负责电阻交换。精确控制区域的尺寸和区域内的缺陷浓度允许ReRAM单元的电阻开关特性得到显着改善。在一些实施例中，缺陷源层包括氮氧化铝，缺陷阻挡层包括氮化钛，缺陷受主层包括氧化铝。

2. 发明申请

WO2013089940A1 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A METAL NITRIDE CONTAINING SWITCHING LAYER 审中-公开
标题翻译：带有金属氮化物的非易失性电阻记忆元件包含切换层
公开(公告)号：WO2013089940A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/063513
申请日：2012-11-05
申请人： INTERMOLECULAR, INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： WANG, Yun , CHIANG, Tony P. , HASHIM, Imran , MINVIELLE, Tim , YAMAGUCHI, Takeshi
IPC分类号： H01L47/02 , H01L49/02 , H01L29/94
CPC分类号： H01L45/145 , B82Y10/00 , H01L27/2409 , H01L27/2463 , H01L45/10 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resistance layer comprises an interlayer deposition procedure, in which metal oxide layers are interspersed with metal nitride layers and then converted into a substantially homogeneous layer by an anneal process. Another method of forming the novel variable resistance layer comprises an intralayer deposition procedure, in which various ALD processes are sequentially interleaved to form a metal oxide-nitride layer. Alternatively, a metal oxide is deposited, nitridized, and annealed to form the variable resistance layer or a metal nitride is deposited, oxidized, and annealed to form the variable resistance layer.
摘要翻译：非易失性电阻存储元件具有新颖的可变电阻层，其包括金属氮化物，金属氧化物氮化物，二金属氧化物氮化物或其多层叠层。形成新颖的可变电阻层的一种方法包括层间沉积程序，其中金属氧化物层散布有金属氮化物层，然后通过退火工艺转变成基本均匀的层。形成新型可变电阻层的另一种方法包括层间沉积程序，其中各种ALD工艺顺序交错以形成金属氧化物 - 氮化物层。或者，金属氧化物被沉积，氮化和退火以形成可变电阻层，或者金属氮化物被沉积，氧化和退火以形成可变电阻层。

3. 发明申请

WO2014110341A1 RESISTIVE RANDOM ACCESS MEMORY CELLS HAVING VARIABLE SWITCHING CHARACTERISTICS 审中-公开
标题翻译：具有可变开关特性的电阻随机存取存储器
公开(公告)号：WO2014110341A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/010999
申请日：2014-01-10
申请人： INTERMOLECULAR, INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： NARDI, Federico , WANG, Yun
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/12 , G11C2213/15 , G11C2213/52 , G11C2213/71 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149
摘要： Provided are resistive random access memory (ReRAM) cells forming arrays and methods of operating such cells and arrays. The ReRAM cells of the same array may have the same structure, such as have the same bottom electrodes, top electrodes, and resistive switching layers. Yet, these cells may be operated in a different manner. For example, some ReRAM cells may be restively switched using lower switching voltages than other cells. The cells may also have different data retention characteristics. These differences may be achieved by using different forming operations for different cells or, more specifically, flowing forming currents in different directions for different cells. The resulting conductive paths formed within the resistive switching layers are believed to switch at or near different electrode interfaces, i.e., within a so called switching zone. In some embodiments, a switching zone of a ReRAM cell may be changed even after the initial formation.
摘要翻译：提供形成阵列的电阻随机存取存储器（ReRAM）单元和操作这样的单元和阵列的方法。相同阵列的ReRAM单元可以具有相同的结构，例如具有相同的底部电极，顶部电极和电阻式开关层。然而，这些电池可以以不同的方式操作。例如，可以使用比其他单元更低的开关电压来重新切换一些ReRAM单元。细胞也可能具有不同的数据保留特征。这些差异可以通过对于不同的单元使用不同的成形操作来实现，或者更具体地，针对不同的单元流动形成不同方向的电流。形成在电阻开关层内的所得导电路径被认为在不同的电极接口处，即在所谓的开关区域内或附近切换。在一些实施例中，即使在初始形成之后，ReRAM单元的切换区也可能改变。

4. 发明申请

WO2014100804A1 MORPHOLOGY CONTROL OF ULTRA-THIN MeOx LAYER 审中-公开
标题翻译：超薄型MeOx层的形态学控制
公开(公告)号：WO2014100804A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/077404
申请日：2013-12-23
申请人： KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC , INTERMOLECULAR, INC.
发明人： NARDI, Federico , WANG, Yun
IPC分类号： H01L21/02 , H01L31/0216 , H01L31/18
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1616 , H01L51/0098
摘要： A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.
摘要翻译：非易失性存储器件包含具有改进的器件切换性能和寿命的电阻式开关存储器元件及其形成方法。非易失性存储器件在衬底上具有第一层，在第一层上具有电阻性开关层，以及第二层。电阻开关层设置在第一层和第二层之间，电阻开关层包括与第一层的顶表面相同形态的材料。在ReRAM器件中形成非易失性存储元件的方法包括在第一层上形成电阻式开关层并形成第二层，使得电阻式开关层位于第一层和第二层之间。电阻开关层包括与第一层的顶表面形成相同形态的材料。

5. 发明申请

WO2014193586A1 RERAM MATERIALS STACK FOR LOW-OPERATING-POWER AND HIGH-DENSITY APPLICATIONS 审中-公开
标题翻译：低功率和高密度应用的RERAM材料堆叠
公开(公告)号：WO2014193586A1
公开(公告)日：2014-12-04
申请号：PCT/US2014/035937
申请日：2014-04-29
申请人： INTERMOLECULAR, INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： WANG, Yun , CHIANG, Tony , PRAMANIK, Dipankar
IPC分类号： G11C11/00
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/1616 , H01L45/1641
摘要： A switching element for resistive-switching memory (ReRAM) provides a controllable, consistent filament break-point at an abrupt structural discontinuity between a layer of high-k high-ionicity variable-resistance (VR) material and a layer of low-k low-ionicity VR material. The high-ionicity layer may be crystalline and the low-ionicity layer may be amorphous. The consistent break-point and characteristics of the low-ionicity layer facilitate lower-power operation. The defects (e.g., oxygen or nitrogen vacancies) that constitute the filament originate either in the high-ionicity VR layer or in a source electrode. The electrode nearest to the low-ionicity layer may be intrinsically inert or may be rendered effectively inert. Some electrodes are rendered effectively inert by the creation of the low-ionicity layer over the electrode.
摘要翻译：用于电阻式开关存储器（ReRAM）的开关元件在高k高离子度可变电阻（VR）材料层和低k低电平层之间突然的结构不连续性时提供可控的一致的灯丝断裂点活性VR材料。高离子层可以是结晶的，低离子层可以是无定形的。低离子层的一致性断点和特性有利于低功率运行。构成长丝的缺陷（例如，氧或氮空位）起源于高离子性VR层或源电极。最接近低离子层的电极本质上是惰性的，或者可以有效地使其成为惰性的。通过在电极上产生低离子层，使一些电极变得有效地是惰性的。

6. 发明申请

WO2013130732A1 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH AN INTEGRATED OXYGEN ISOLATION STRUCTURE 审中-公开
标题翻译：具有一体化氧分离结构的非挥发性电阻记忆元件
公开(公告)号：WO2013130732A1
公开(公告)日：2013-09-06
申请号：PCT/US2013/028201
申请日：2013-02-28
申请人： KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC , INTERMOLECULAR, INC.
发明人： CHIANG, Tony , HASHIM, Imran , WANG, Yun , PRAMANIK, Dipankar
IPC分类号： H01L29/02
CPC分类号： H01L45/16 , H01L27/2463 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.
摘要翻译：非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。一个这样的氧隔离结构包括氧阻挡层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。

7. 发明申请

WO2013063617A1 METHOD FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS WITH IMPROVED SWITCHING BEHAVIOR 审中-公开
标题翻译：形成具有改进的开关行为的电阻式开关元件的方法
公开(公告)号：WO2013063617A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/063221
申请日：2012-11-02
申请人： INTERMOLECULAR, INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： WANG, Yun , CHIANG, Tony, P. , GOPAL, Vidyut , HASHIM, Imram , MINVIELLE, Tim , YAMAGUCHI, Takeshi
IPC分类号： H01L21/469
CPC分类号： H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.
摘要翻译：具有最佳切换行为的RRAM电阻式开关元件的制造方法包括晶相结构变化。指示最佳切换行为的结构变化包括在电阻式开关层和电极之间的界面区域中的氧化铪相。

8. 发明申请

WO2013109954A2 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A PASSIVE CURRENT STEERING ELEMENT 审中-公开
标题翻译：使用隧道式氧化物作为被动电流转向元件的非易失性存储器件
公开(公告)号：WO2013109954A2
公开(公告)日：2013-07-25
申请号：PCT/US2013/022242
申请日：2013-01-18
申请人： KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： TENDULKAR, Mihir , HASHIM, Imran , WANG, Yun
IPC分类号： H01L45/00 , H01L21/02 , B82Y99/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

9. 发明申请

WO2014043630A1 EMBEDDED NONVOLATILE MEMORY ELEMENTS HAVING RESISTIVE SWITCHING CHARACTERISTICS 审中-公开
标题翻译：嵌入式非易失性存储器元件具有电阻开关特性
公开(公告)号：WO2014043630A1
公开(公告)日：2014-03-20
申请号：PCT/US2013/059963
申请日：2013-09-16
申请人： INTERMOLECULAR, INC
发明人： HASHIM, Imran , CHIANG, Tony , GOPAL, Vidyut , WANG, Yun
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2213/32 , G11C2213/51 , G11C2213/52 , G11C2213/74 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line.
摘要翻译：提供了各自包括电阻式开关层和电流控制元件的非易失性存储器组件。转向元件可以是与开关层串联连接的晶体管。由转向元件提供的电阻控制允许使用需要低开关电压和电流的开关层。包括这种开关层的存储器组件比例如需要高得多的开关电压的闪速存储器更容易嵌入到具有其它低电压组件（例如逻辑和数字信号处理组件）的集成电路芯片中。在一些实施例中，所提供的非易失性存储器组件在小于约3.0V的开关电压和小于50微安的相应电流下工作。存储元件可以包括设置在氮化钛电极和掺杂多晶硅电极之间的富含金属的氧化铪。一个电极可以连接到晶体管的漏极或源极，而另一个电极连接到信号线。

10. 发明申请

WO2013032809A1 ATOMIC LAYER DEPOSITION OF METAL OXIDE MATERIALS FOR MEMORY APPLICATIONS 审中-公开
标题翻译：用于存储器应用的金属氧化物材料的原子层沉积
公开(公告)号：WO2013032809A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/051865
申请日：2012-08-22
申请人： INTERMOLECULAR, INC. , WANG, Yun , GOPAL, Vidyut , HASHIM, Imran , PRAMANIK, Dipankar , CHIANG, Tony
发明人： WANG, Yun , GOPAL, Vidyut , HASHIM, Imran , PRAMANIK, Dipankar , CHIANG, Tony
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L45/145 , C23C16/40 , C23C16/45525 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.
摘要翻译：本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。设置在金属氧化物层之间的界面有助于氧空位移动。在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对准的晶界，其包含平行于电极界面延伸的许多晶界。因此，氧空缺在切换期间被捕获和释放，而空位明显损失。因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

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