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1. 发明申请

WO2007041109A1 MICROELECTRONIC PACKAGE HAVING DIRECT CONTACT HEAT SPREADER AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：具有直接接触热交换器的微电子封装及其制造方法
公开(公告)号：WO2007041109A1
公开(公告)日：2007-04-12
申请号：PCT/US2006/037520
申请日：2006-09-26
申请人： INTEL CORPORATION , HU, Chuan , LU, Daoquiang , VANDENTOP, Gilroy , RAMANATHAN, Shiriram , BASKARAN, Rajashree , DUBIN, Valery
发明人： HU, Chuan , LU, Daoquiang , VANDENTOP, Gilroy , RAMANATHAN, Shiriram , BASKARAN, Rajashree , DUBIN, Valery
IPC分类号： H01L23/367
CPC分类号： H01L24/83 , H01L21/4871 , H01L23/3735 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/18161 , H01L2924/19106 , H01L2924/00
摘要： A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.
摘要翻译：一种制造具有直接接触散热器的微电子封装的方法，根据该方法形成的封装，根据该方法形成的模具散热器组合以及包含该封装的系统。该方法包括金属化微电子管芯的背面以形成直接接触并固定到管芯背面的散热器主体，从而产生模具散热器组合。该封装包括模具散热器组合和与模具结合的衬底。

2. 发明申请

WO2007041124A1 AMINE-FREE DEPOSITION OF METAL-NITRIDE FILMS 审中-公开
标题翻译：金属 - 硝酸盐膜的无胺沉淀
公开(公告)号：WO2007041124A1
公开(公告)日：2007-04-12
申请号：PCT/US2006/037578
申请日：2006-09-26
申请人： INTEL CORPORATION , DUBIN, Valery , O'BRIEN, Kevin , LAVOIE, Adrien , DOMINGUEZ, Juan , JOHNSTON, Steven , PECK, John , THOMSPSON, David , PETERS, David
发明人： DUBIN, Valery , O'BRIEN, Kevin , LAVOIE, Adrien , DOMINGUEZ, Juan , JOHNSTON, Steven , PECK, John , THOMSPSON, David , PETERS, David
IPC分类号： H01L21/768 , H01L21/285 , H01L23/532
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an orgaiiometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供基底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板的表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

3. 发明申请

WO2005067032A1 DUAL DAMASCENE PROCESS USING CARBON DOPED AND CARBON FREE OXIDE LAYERS 审中-公开
标题翻译：使用碳掺杂和无碳氧化物层的双重增塑工艺
公开(公告)号：WO2005067032A1
公开(公告)日：2005-07-21
申请号：PCT/US2004/043653
申请日：2004-12-22
申请人： INTEL CORPORATION , DUBIN, Valery , HUSSEIN, Makarem, A. , BOHR, Mark
发明人： DUBIN, Valery , HUSSEIN, Makarem, A. , BOHR, Mark
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/31116 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76849
摘要： A damascene process using a doped and undoped oxide ILD is described. The selectivity between the carbon doped and carbon free oxide provides an etching stop between the ILD’s in addition to providing mechanical strength to the structure.
摘要翻译：描述了使用掺杂和未掺杂的氧化物ILD的镶嵌工艺。碳掺杂和无碳氧化物之间的选择性除了为结构提供机械强度外，还提供ILD之间的蚀刻停止。

4. 发明申请

WO2006069369A2 A METHOD FOR CONSTRUCTING CONTACT FORMATIONS 审中-公开
标题翻译：一种建立联系方式的方法
公开(公告)号：WO2006069369A2
公开(公告)日：2006-06-29
申请号：PCT/US2005/047000
申请日：2005-12-21
申请人： INTEL CORPORATION , DUBIN, Valery , HUANG, Tzuen-Luh , FANG, Ming , LEE, Kevin , LIANG, Harry , CHANG, Margherita
发明人： DUBIN, Valery , HUANG, Tzuen-Luh , FANG, Ming , LEE, Kevin , LIANG, Harry , CHANG, Margherita
IPC分类号： C25D3/02 , C25D3/38 , C25D5/10 , H01L21/288
CPC分类号： H01L21/2885 , C25D3/02 , C25D3/38 , C25D5/10 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1147 , H01L2224/13099 , H01L2924/01005 , H01L2924/01011 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2924/0496
摘要： According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metallic ions and an accelerator. The accelerator may include at least one of bis-(sodium sulfopropyl)-disulfide and 3-mercapto-1-propanesulfonic acid-sodium salt. A voltage may be applied across the electrolytic solution and the conductive portion of the substrate to cause the metallic ions to be changed into metallic particles and deposited on the conductive portion. The electrolytic solution may also include a protonated organic additive. The electrolytic solution may also include an acid and a surfactant. The acid may include at least one of sulfuric acid, methane sulfonic acid, benzene sulfonic acid, and picryl sulfonic acid. The surfactant may include at least one of polyethylene glycol and polypropylene glycol.
摘要翻译：根据本发明的一个方面，提供了形成接触层的方法。衬底可以放置在电解溶液中。基板可以具有暴露的导电部分，电解液可以包括多个金属离子和加速器。促进剂可以包括双 - （磺基磺基丙基） - 二硫化物和3-巯基-1-丙磺酸钠盐中的至少一种。可以在电解液和基板的导电部分之间施加电压，以使金属离子变成金属颗粒并沉积在导电部分上。电解液还可以包括质子化的有机添加剂。电解液还可以包含酸和表面活性剂。酸可以包括硫酸，甲磺酸，苯磺酸和苦基磺酸中的至少一种。表面活性剂可以包括聚乙二醇和聚丙二醇中的至少一种。

5. 发明申请

WO2006033957A1 METHOD TO FABRICATE COPPER-COBALT INTERCONNECTS 审中-公开
标题翻译：铜 - 钴互连的方法
公开(公告)号：WO2006033957A1
公开(公告)日：2006-03-30
申请号：PCT/US2005/032925
申请日：2005-09-13
申请人： INTEL CORPORATION , DUBIN, Valery , CHENG, Chin-Chang , CHOWDHURY, Shaestagir
发明人： DUBIN, Valery , CHENG, Chin-Chang , CHOWDHURY, Shaestagir
IPC分类号： C23C18/30 , C23C18/16 , C23C18/31 , H01L21/288
CPC分类号： H01L21/288 , C23C18/166 , C23C18/1676 , C23C18/1827 , C23C18/31 , H01L21/76849
摘要： A method to form copper-cobalt interconnects comprises rinsing a copper substrate with deionized water, heating a mild etchant solution and rinsing the copper substrate with the heated mild etchant solution, heating an electroless plating solution and rinsing the copper substrate with a portion of the heated electroless plating solution, heating a reducing agent solution and mixing another portion of the heated electroless plating solution with the heated reducing agent solution to form a self-catalytic bath, and applying the self-catalytic bath to the copper substrate. The electroless plating solution may contain cobalt ions. The method may further include rinsing the copper substrate with deionized water and a hydrofluoric acid solution after the application of the self-catalytic bath.
摘要翻译：形成铜 - 钴互连的方法包括用去离子水漂洗铜基底，加热温和的蚀刻剂溶液并用加热的温和的蚀刻剂溶液冲洗铜基底，加热无电镀溶液并用一部分加热的化学镀溶液，加热还原剂溶液并将加热的化学镀溶液的另一部分与加热的还原剂溶液混合以形成自催化浴，并将自催化浴施加到铜基底上。化学镀溶液可以含有钴离子。该方法还可以包括在施加自催化浴后用去离子水和氢氟酸溶液冲洗铜基底。

6. 发明申请

WO2008048222A2 METHOD AND CMOS-BASED DEVICE TO ANALYZE MOLECULES AND NANOMATERIALS BASED ON THE ELECTRICAL READOUT OF SPECIFIC BINDING EVENTS ON FUNCTIONALIZED ELECTRODES 审中-公开
标题翻译：基于功能化电极上的特定结合事件的电学读出分析分子和纳米材料的方法和基于CMOS的装置
公开(公告)号：WO2008048222A2
公开(公告)日：2008-04-24
申请号：PCT/US2006/030397
申请日：2006-08-03
申请人： INTEL CORPORATION , DUBIN, Valery , GSTREIN, Florian , LUEKER, Jonathan
发明人： DUBIN, Valery , GSTREIN, Florian , LUEKER, Jonathan
IPC分类号： G01N33/543
CPC分类号： C12Q1/6816 , C12Q2565/607
摘要： A device having a functionalized electrode having a probe molecule, wherein the device has an ability to electrically detect a molecular binding event between the probe molecule and a target molecule by a polarization change of the functionalized electrode is disclosed. The device could also include an unfunctionalized electrode that does not have the probe molecule and the device could have an ability to electrically detect the molecular binding event between the probe molecule and the target molecule by a polarization change between the functionalized electrode and the unfunctionalized electrode.
摘要翻译：具有带探针分子的功能化电极的装置被公开，其中该装置具有通过功能化电极的极化变化来电检测探针分子和靶分子之间的分子结合事件的能力。该装置还可以包括不具有探针分子的非功能化电极，并且装置可以具有通过功能化电极和未功能化电极之间的极化变化来电检测探针分子和目标分子之间的分子结合事件的能力。

7. 发明申请

WO2006133318A1 CARBON NANOTUBE INTERCONNECT CONTACTS 审中-公开
标题翻译：碳纳米管互连联系
公开(公告)号：WO2006133318A1
公开(公告)日：2006-12-14
申请号：PCT/US2006/022183
申请日：2006-06-06
申请人： INTEL CORPORATION , GSTREIN, Florian , LAVOIE, Adrien , DUBIN, Valery
发明人： GSTREIN, Florian , LAVOIE, Adrien , DUBIN, Valery
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/53276 , H01L21/76877 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect on a semiconductor suabstrate comprises providing at least one carbon nanotube (304) within a trench, etching at least one portion of the carbon nanotube to create an opening (602) conformally depositing a metal layer on the carbon nanotube through the opening, and forming a metallized contact (308) at the opening that is substantially coupled to the carbon nanotube. The metal layer may be conformally deposited on the carbon nanotube using an atomic layer depositionm process or an electroless plating process. Multiple metal layers may be deposited to substantially fill voids within the carbon nanotube. The electroless plating process may use as supercritical liquid as the medium for the plating solution. The wetting behavior of the carbon nanotube may be modified prior to the electroless plating process to increase the hydrophilicity of the carbon nanotube.
摘要翻译：一种用于在半导体衬底上形成互连的方法包括在沟槽内提供至少一个碳纳米管（304），蚀刻所述碳纳米管的至少一部分以形成在所述碳纳米管上共形沉积金属层的开口（602），所述开口（602）通过并且在基本上与碳纳米管耦合的开口处形成金属化接触（308）。金属层可以使用原子层沉积工艺或无电镀工艺共形沉积在碳纳米管上。可以沉积多个金属层以基本上填充碳纳米管内的空隙。化学镀处理可以用作超临界液体作为电镀溶液的介质。可以在化学镀处理之前改变碳纳米管的润湿性能，以增加碳纳米管的亲水性。

8. 发明申请

WO2005095963A2 SENSOR ARRAY INTEGRATED CIRCUITS 审中-公开
标题翻译：传感器阵列集成电路
公开(公告)号：WO2005095963A2
公开(公告)日：2005-10-13
申请号：PCT/US2005/010401
申请日：2005-03-25
申请人： INTEL CORPORATION , DUBIN, Valery , DAVID, Ken , BERLIN, Andrew
发明人： DUBIN, Valery , DAVID, Ken , BERLIN, Andrew
IPC分类号： G01N33/53
CPC分类号： B82Y30/00 , G01J3/02
摘要： An apparatus includes a condensed array addressed device; and a spectroscope optically coupled to the condensed array addressed device. A method includes determining bonding and/or lack-of-bonding of a target molecule to a condensed array addressed device by characterizing a subsequent rate of electrolysis on the condensed array addressed device. A method includes fabricating a condensed array addressed device using damascene patterning.
摘要翻译：一种装置包括一个聚光阵列寻址装置; 以及光学耦合到聚光阵列寻址装置的分光镜。一种方法包括通过表征冷凝阵列寻址装置上随后的电解速率来确定目标分子与冷凝阵列寻址装置的结合和/或缺少键合。一种方法包括使用镶嵌图案来制造聚光阵列寻址装置。

9. 发明申请

WO2008118774A1 COPPER DIE BUMPS WITH ELECTROMIGRATION CAP AND PLATED SOLDER 审中-公开
标题翻译：铜电池与电动盖和镀锡焊枪
公开(公告)号：WO2008118774A1
公开(公告)日：2008-10-02
申请号：PCT/US2008/057802
申请日：2008-03-21
申请人： INTEL CORPORATION , ZHONG, Ting , DUBIN, Valery , BOHR, Mark
发明人： ZHONG, Ting , DUBIN, Valery , BOHR, Mark
IPC分类号： H01L21/60
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11912 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13164 , H01L2224/13169 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2224/8121 , H01L2224/81815 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01068 , H01L2924/01073 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： Embodiments of the invention include apparatuses and methods relating to copper die bumps with electromigration cap and plated solder. In one embodiment, an apparatus comprises an integrated circuit die, a plurality of copper bumps on a surface of the die, electromigration (EM) caps substantially covering a mating surface of the copper bumps capable of controlling intermetallic formation between the copper bumps and a solder, and solder plating on the EM caps capable of protecting the EM caps from oxidation prior to packaging.
摘要翻译：本发明的实施例包括与具有电迁移帽和电镀焊料的铜芯凸块相关的装置和方法。在一个实施例中，一种装置包括集成电路管芯，模具表面上的多个铜凸块，电迁移（EM）盖，基本覆盖铜凸块的配合表面，能够控制铜凸块和焊料之间的金属间形成，并且在包装之前能够保护EM帽免受氧化的EM帽上的焊料镀层。

10. 发明申请

WO2006133042A2 METHOD AND APPARATUS TO FABRICATE POLYMER ARRAYS ON PATTERNED WAFERS USING ELECTROCHEMICAL SYNTHESIS 审中-公开
标题翻译：使用电化学合成法制作聚酰胺阵列的方法和装置
公开(公告)号：WO2006133042A2
公开(公告)日：2006-12-14
申请号：PCT/US2006/021650
申请日：2006-06-02
申请人： INTEL CORPORATION , HOLT, Gordon , BARNETT, Brandon , DUBIN, Valery , GSTREIN, Florian
发明人： HOLT, Gordon , BARNETT, Brandon , DUBIN, Valery , GSTREIN, Florian
IPC分类号： B01J19/00
CPC分类号： B82Y30/00 , B01J19/0046 , B01J2219/00497 , B01J2219/005 , B01J2219/00527 , B01J2219/00574 , B01J2219/00576 , B01J2219/00585 , B01J2219/00596 , B01J2219/00653 , B01J2219/00659 , B01J2219/00662 , B01J2219/00675 , B01J2219/00677 , B01J2219/00689 , B01J2219/00713 , B01J2219/00722 , B01J2219/00725
摘要： A wafer having a plurality of dies (also called array chips) on the wafer, the die having an electrode to generate a deprotecting reagent, a working electrode to electrochemically synthesize a material, a confinement electrode adjacent to the working electrode to confine reactive reagents, and a die pad, wherein die pads of the plurality of dies are interconnected on the wafer to electrochemically synthesize the material in parallel on a plurality of working electrodes is disclosed. Also, a method for wafer-scale manufacturing of a plurality of dies and a method for electrochemically synthesizing a material in parallel on a plurality of dies on a wafer are disclosed.
摘要翻译：具有在晶片上具有多个管芯（也称为阵列芯片）的晶片，该管芯具有产生脱保护试剂的电极，用于电化学合成材料的工作电极，邻近工作电极的约束电极以限制反应性试剂，以及管芯焊盘，其中，所述多个管芯的管芯焊盘在晶片上互连，以在多个工作电极上并行地电化学地合成所述材料。另外，公开了一种用于晶片尺寸制造多个管芯的方法和用于在晶片上的多个管芯上并行地电化学合成材料的方法。

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