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1. 发明申请

WO2005067032A1 DUAL DAMASCENE PROCESS USING CARBON DOPED AND CARBON FREE OXIDE LAYERS 审中-公开
标题翻译：使用碳掺杂和无碳氧化物层的双重增塑工艺
公开(公告)号：WO2005067032A1
公开(公告)日：2005-07-21
申请号：PCT/US2004/043653
申请日：2004-12-22
申请人： INTEL CORPORATION , DUBIN, Valery , HUSSEIN, Makarem, A. , BOHR, Mark
发明人： DUBIN, Valery , HUSSEIN, Makarem, A. , BOHR, Mark
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/31116 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76849
摘要： A damascene process using a doped and undoped oxide ILD is described. The selectivity between the carbon doped and carbon free oxide provides an etching stop between the ILD’s in addition to providing mechanical strength to the structure.
摘要翻译：描述了使用掺杂和未掺杂的氧化物ILD的镶嵌工艺。碳掺杂和无碳氧化物之间的选择性除了为结构提供机械强度外，还提供ILD之间的蚀刻停止。

2. 发明申请

WO2007130368A2 DIELECTRIC SPACERS FOR METAL INTERCONNECTS AND METHOD TO FORM THE SAME 审中-公开
标题翻译：用于金属互连的介电间隔件及其形成方法
公开(公告)号：WO2007130368A2
公开(公告)日：2007-11-15
申请号：PCT/US2007/010484
申请日：2007-05-01
申请人： INTEL CORPORATION , BOYANOV, Boyan , HUSSEIN, Makarem, A.
发明人： BOYANOV, Boyan , HUSSEIN, Makarem, A.
CPC分类号： H01L21/76834 , H01L21/7682 , H01L21/76877 , H01L23/5222 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53276 , H01L23/53295 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.
摘要翻译：描述了包含电介质间隔体的多个金属互连以及形成这种电介质间隔体的方法。在一个实施例中，与相邻金属互连相邻的电介质间隔物彼此不连续。在另一个实施例中，电介质间隔体可以提供未落地通孔可以有效着落的区域。

3. 发明申请

WO2005049681A2 ANTIREFLECTIVE COATINGS FOR VIA FILL AND PHOTOLITHOGRAPHY APPLICATIONS AND METHODS OF PREPARATION THEREOF 审中-公开
标题翻译：用于通过薄膜和光刻机应用的抗反射涂层及其制备方法
公开(公告)号：WO2005049681A2
公开(公告)日：2005-06-02
申请号：PCT/US2004/038517
申请日：2004-11-17
申请人： HONEYWELL INTERNATIONAL INC. , LI, Bo , KENNEDY, Joseph , IWAMOTO, Nancy , LU, Victor , LEUNG, Roger , FRADKIN, Mark, A. , HUSSEIN, Makarem, A. , GOODNER, Michael, D.
发明人： LI, Bo , KENNEDY, Joseph , IWAMOTO, Nancy , LU, Victor , LEUNG, Roger , FRADKIN, Mark, A. , HUSSEIN, Makarem, A. , GOODNER, Michael, D.
IPC分类号： C08G
CPC分类号： C09D183/04 , C09D183/08 , G03F7/0751 , G03F7/0752 , G03F7/091
摘要： An absorbing composition is described herein that includes at least one inorganicbased compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.
摘要翻译：本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

4. 发明申请

WO2004113486A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：清洁组合物，清洁半导体基板的方法和在半导体基板上形成布线的方法
公开(公告)号：WO2004113486A1
公开(公告)日：2004-12-29
申请号：PCT/JP2004/008951
申请日：2004-06-18
申请人： TOKYO OHKA KOGYO CO., LTD. , INTEL CORPORATION
发明人： YOKOI, Shigeru , WAKIYA, Kazumasa , HARAGUCHI, Takayuki , HUSSEIN, Makarem, A. , JONG, Lana, I. , CLARK, Shan, Christopher
IPC分类号： C11D11/00
CPC分类号： G03F7/425 , C11D7/06 , C11D7/267 , C11D7/32 , C11D7/34 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/31133
摘要： A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.
摘要翻译：洗涤剂组合物至少包含季铵氢氧化物，水溶性有机溶剂，水，防腐剂和氢氧化钾的总量的1质量％以下。该清洁组合物可以从半导体衬底的表面单独且有效地除去光致抗蚀剂膜，掩埋材料，金属残留物。

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