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    • 8. 发明申请
    • EUV LIGHT SOURCE
    • EUV光源
    • WO2005091879A2
    • 2005-10-06
    • PCT/US2005005935
    • 2005-02-24
    • CYMER INCPARTLO WILLIAM NBOWERING NORBERT RERSHOV ALEXANDER IFOMENKOV IGOR VOLIVER I ROGERVIATELLA JOHNJACQUES ROBERT N
    • PARTLO WILLIAM NBOWERING NORBERT RERSHOV ALEXANDER IFOMENKOV IGOR VOLIVER I ROGERVIATELLA JOHNJACQUES ROBERT N
    • G03F7/20G21K1/06H01J35/20H05G2/00
    • G03F7/70033B82Y10/00G03F7/70175G03F7/70916G21K1/062G21K2201/061G21K2201/065G21K2201/067H05G2/003H05G2/005H05G2/006H05G2/008
    • An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma ("LPP") extreme ultraviolet ("EUV") light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.
    • 公开了一种用于EUV光产生的装置和方法,其可以包括激光产生的等离子体(“LPP”)极紫外(“EUV”)光源控制系统,其包括适于递送移动等离子体引发靶的目标传送系统和EUV光收集 光学元件具有限定期望的等离子体起始位置的焦点,包括:目标跟踪和反馈系统,包括:至少一个成像装置,其提供目标流轨迹的图像作为输出,其中,所述目标流轨迹来自所述目标流轨迹的成像速度 摄像机太慢,不能成像形成被作为目标流轨迹成像的目标流的各个等离子体形成目标; 流轨迹误差检测器,从与期望的等离子体起始位置相交的期望的流轨道检测在大致垂直于目标流轨迹的至少一个轴上的目标流轨迹位置的误差。 至少一个目标交叉检测器可以瞄准目标轨道并且检测等离子体形成目标通过目标轨道中的选定点的通过。 驱动激光触发机构利用目标交叉检测器的输出来确定驱动激光触发的定时,以便驱动激光输出脉冲在等离子体引发目标处沿着目标轨道在一般最接近的等离子体起始位置处相交 接近所需的等离子体引发位点。 等离子体起始检测器可以瞄准目标轨道并且检测针对相应目标的等离子体起始位置沿着目标轨迹的位置。 中间焦点照明器可以照亮形成在中间焦点处的孔,以对至少一个成像装置中的孔进行成像。 所述至少一个成像装置可以是至少两个成像装置,每个成像装置基于对所述中间焦点的图像的图像的分析,提供与所述目标轨道与所述中间焦点的图像的垂直中心线轴线分离相关的误差信号 所述至少两个成像装置。 目标传送反馈和控制系统可以包括目标传送单元; 目标传送位移控制机构至少在对应于从第一成像装置中的图像的分析导出的第一位移误差信号的轴上移动目标传送机构,并且至少在与由第二位移误差信号 对第二成像装置中的图像进行分析。
    • 10. 发明申请
    • EUV COLLECTOR DEBRIS MANAGEMENT
    • EUV收集器破产管理
    • WO2006049886A3
    • 2009-03-05
    • PCT/US2005037725
    • 2005-10-20
    • CYMER INCPARTLO WILLIAM NFOMENKOV IGOR VERSHOV ALEXANDER IOLDHAM WILLIAMHEMBERG OSCARMARX WILLIAM F
    • PARTLO WILLIAM NFOMENKOV IGOR VERSHOV ALEXANDER IOLDHAM WILLIAMHEMBERG OSCARMARX WILLIAM F
    • H01L21/302H01L21/306
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。